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1. 发明授权

US06775198B2 Semiconductor storage unit 失效
标题翻译：半导体存储单元
公开(公告)号：US06775198B2
公开(公告)日：2004-08-10
申请号：US10253512
申请日：2002-09-25
申请人： Kozo Ishida , Hideki Yonetani , Takeshi Ohgami
发明人： Kozo Ishida , Hideki Yonetani , Takeshi Ohgami
IPC分类号： G11C700
CPC分类号： G11C5/14
摘要： Power to operates memory bank of DRAM stably is supplied with reduced power consumption. A semiconductor storage unit includes multiple arrays forming memory banks on a substrate, first and second power supplies. Multiple arrays are arranged like a matrix and surround the central region of the substrate. Each memory bank consists of two of the multiple arrays. Each first power supply supplies driving power to a peripheral circuit which drives each multiple array. Second power supplies are arranged at four corners of the central region, each supply provides access power to word lines which access the multiple arrays. The first power supplies are mounted to a central and the opposite side for predetermined arrays, serve as a main and an auxiliary power supply to provide main and auxiliary power (smaller than the main power), and provide distantly arranged two of the multiple arrays forming a memory bank with power.
摘要翻译：稳定地操作DRAM的存储体的功率被提供降低的功耗。半导体存储单元包括在基板上形成存储体的多个阵列，第一和第二电源。多个阵列被布置成像矩阵并且围绕衬底的中心区域。每个存储体由多个阵列中的两个组成。每个第一电源为驱动每个多阵列的外围电路提供驱动电力。第二电源设置在中央区域的四个角处，每个电源为访问多个阵列的字线提供访问电力。第一电源被安装到中央和相对侧用于预定的阵列，用作主电源和辅助电源，以提供主功率和辅助功率（小于主功率），并且提供形成的多个阵列中的远距离布置的两个一个有权力的记忆库。

2. 发明授权

US06625050B2 Semiconductor memory device adaptable to various types of packages 失效
公开(公告)号：US06625050B2
公开(公告)日：2003-09-23
申请号：US10143931
申请日：2002-05-14
申请人： Makoto Suwa , Shinichi Jinbo , Zengcheng Tian , Takeo Okamoto , Kozo Ishida , Hideki Yonetani , Tsutomu Nagasawa , Tadaaki Yamauchi , Junko Matsumoto
发明人： Makoto Suwa , Shinichi Jinbo , Zengcheng Tian , Takeo Okamoto , Kozo Ishida , Hideki Yonetani , Tsutomu Nagasawa , Tadaaki Yamauchi , Junko Matsumoto
IPC分类号： G11C506
CPC分类号： B82Y10/00 , H01L23/50 , H01L24/06 , H01L2224/05554 , H01L2224/05599 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01023 , H01L2924/01033 , H01L2924/01055 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/12042 , H01L2924/13091 , H03K3/356008 , H01L2224/45099 , H01L2924/00
摘要： Pad lines are placed on the peripheral region of a chip along EAST band and WEST band (E/W band). In order to allow the chip with pads arranged on the peripheral region to be adaptable to a TSOP, VDD and VSS pads are arranged on the edge region on NORTH band and SOUTH band (N/S band) near the center of the N/S band. Moreover, in consideration of frame design for the TSOP, some pads on the ends of the pad lines among the pads included in the pad lines are arranged in reverse order relative to the order of pins. Further, VDDQ and VSSQ pads are arranged in the same order as that of pins for a package which requires no consideration of frame design. On the other hand, for use in a BGA package, VDD and VSS pads are arranged in pairs at respective ends of the pad lines. A semiconductor memory device with this pad arrangement is accordingly adaptable to various types of packages.

3. 发明授权

US06724679B2 Semiconductor memory device allowing high density structure or high performance 有权
标题翻译：半导体存储器件允许高密度结构或高性能
公开(公告)号：US06724679B2
公开(公告)日：2004-04-20
申请号：US10126622
申请日：2002-04-22
申请人： Tsutomu Nagasawa , Hideki Yonetani , Kozo Ishida , Shinichi Jinbo , Makoto Suwa , Tadaaki Yamauchi , Junko Matsumoto , Zengcheng Tian , Takeo Okamoto
发明人： Tsutomu Nagasawa , Hideki Yonetani , Kozo Ishida , Shinichi Jinbo , Makoto Suwa , Tadaaki Yamauchi , Junko Matsumoto , Zengcheng Tian , Takeo Okamoto
IPC分类号： G11C800
CPC分类号： G11C29/12005 , G11C8/12 , G11C29/26 , G11C2029/1206
摘要： A semiconductor memory device includes banks, predecoders, a latch circuit, a counter, a fuse and buffers. The bank includes a plurality of memory cells arranged in rows and columns, and others. The predecoders are disposed in a central portion of the semiconductor memory device. The predecoder produces a predecode signal for selecting each of the banks based on a bank address received from the buffer, and outputs the predecode signal to the banks. The predecoder produces the predecode signal for selecting each of the banks based on the bank address, and outputs the predecode signal to the banks. Consequently, interconnections in the central portion can be reduced in number.
摘要翻译：半导体存储器件包括存储体，预解码器，锁存电路，计数器，熔丝和缓冲器。存储体包括以行和列排列的多个存储单元。预解码器设置在半导体存储器件的中心部分。预解码器基于从缓冲器接收到的存储体地址产生用于选择每个存储体的预解码信号，并将预解码信号输出到存储体。预解码器产生用于基于存储体地址选择每个存储体的预解码信号，并将预解码信号输出到存储体。因此，可以减少中心部分的互连。

4. 发明授权

US06724223B2 Semiconductor device used in two systems having different power supply voltages 有权
标题翻译：在具有不同电源电压的两个系统中使用的半导体器件
公开(公告)号：US06724223B2
公开(公告)日：2004-04-20
申请号：US10287643
申请日：2002-11-05
申请人： Tetsuichiro Ichiguchi , Tsutomu Nagasawa , Tadaaki Yamauchi , Zengcheng Tian , Makoto Suwa , Junko Matsumoto , Takeo Okamoto , Hideki Yonetani
发明人： Tetsuichiro Ichiguchi , Tsutomu Nagasawa , Tadaaki Yamauchi , Zengcheng Tian , Makoto Suwa , Junko Matsumoto , Takeo Okamoto , Hideki Yonetani
IPC分类号： H03K190175
CPC分类号： G11C7/225 , G11C5/14 , G11C7/22 , G11C11/4074 , G11C11/4076 , H01L27/0255
摘要： A clock buffer of a DRAM includes: a first NAND gate which is driven by a first internal power supply voltage (2.5 V) and which determines the level of an input clock signal if the DRAM is used for a TTL-system interface (MLV=2.5 V); and a second NAND gate which is driven by a second internal power supply voltage (1.8 V) and which determines the level of the input clock signal if the DRAM is used for a 1.8 V-system interface (MLV=0 V). Accordingly, in each of the first and second NAND gates, sizes of four MOS transistors can be set at optimum values, respectively.
摘要翻译： DRAM的时钟缓冲器包括：第一NAND门，其由第一内部电源电压（2.5V）驱动，并且如果DRAM用于TTL系统接口，则确定输入时钟信号的电平（MLV = 2.5 V）; 以及第二NAND门，其由第二内部电源电压（1.8V）驱动，并且如果DRAM用于1.8V系统接口（MLV = 0V），则确定输入时钟信号的电平。因此，在第一和第二NAND门的每一个中，四个MOS晶体管的尺寸可以分别被设定为最佳值。

5. 发明授权

US06813210B2 Semiconductor memory device requiring refresh operation 失效
标题翻译：需要刷新操作的半导体存储器件
公开(公告)号：US06813210B2
公开(公告)日：2004-11-02
申请号：US10300591
申请日：2002-11-21
申请人： Takeo Okamoto , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Tadaaki Yamauchi , Makoto Suwa , Junko Matsumoto , Zengcheng Tian
发明人： Takeo Okamoto , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Tadaaki Yamauchi , Makoto Suwa , Junko Matsumoto , Zengcheng Tian
IPC分类号： G11C700
CPC分类号： G11C7/04 , G11C11/406
摘要： The semiconductor memory device includes a refresh timer for determining a refresh cycle of self-refresh operation. The refresh timer includes a voltage regulator, a ring oscillator and a counter. The voltage regulator generates a bias voltage having positive temperature characteristics. The ring oscillator varies an oscillation cycle of a pulse signal according to the bias voltage. The counter counts a prescribed number of pulse signals and generates a refresh signal for executing refresh operation. The semiconductor memory device thus varies the refresh cycle according to a temperature change, and executes refresh operation with an appropriate refresh cycle.
摘要翻译：半导体存储器件包括用于确定自刷新操作的刷新周期的刷新定时器。刷新定时器包括电压调节器，环形振荡器和计数器。电压调节器产生具有正温度特性的偏置电压。环形振荡器根据偏置电压来改变脉冲信号的振荡周期。计数器对规定数量的脉冲信号进行计数，并产生用于执行刷新操作的刷新信号。因此，半导体存储器件根据温度变化而改变刷新周期，并且以适当的刷新周期执行刷新操作。

6. 发明授权

US06954103B2 Semiconductor device having internal voltage generated stably 失效
标题翻译：内部电压稳定的半导体装置
公开(公告)号：US06954103B2
公开(公告)日：2005-10-11
申请号：US10427968
申请日：2003-05-02
申请人： Tadaaki Yamauchi , Junko Matsumoto , Takeo Okamoto , Makoto Suwa , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Zengcheng Tian
发明人： Tadaaki Yamauchi , Junko Matsumoto , Takeo Okamoto , Makoto Suwa , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Zengcheng Tian
IPC分类号： H01L27/04 , G11C5/14 , G11C11/407 , G11C11/4074 , H01L21/822 , G05F1/46
CPC分类号： G11C11/4074 , G11C5/14
摘要： A manner of generating internal voltages such as a high voltage, an intermediate voltage and an internal power supply voltage is switched in accordance with a power supply level setting signal. When the voltage level of an external power supply voltage is low, a current drive transistor receiving an output of a comparing circuit and an auxiliary drive transistor are forcedly set in a conductive state, and external power supply voltage is transmitted on an internal power supply line. At this time, the comparing operation of the comparing circuit is stopped. When the level of the external power supply voltage is high, the comparing circuit is activated down convert the external power supply voltage for generating a peripheral power supply voltage on the internal power supply line.
摘要翻译：根据电源电平设定信号切换产生高电压，中间电压和内部电源电压等内部电压的方式。当外部电源电压的电压低时，接收比较电路和辅助驱动晶体管的输出的电流驱动晶体管被强制设定在导通状态，外部电源电压在内部电源线。此时，比较电路的比较动作停止。当外部电源电压为高电平时，比较电路被激活，转换外部电源电压以产生内部电源线上的外围电源电压。

7. 发明授权

US06873563B2 Semiconductor circuit device adaptable to plurality of types of packages 失效
标题翻译：适用于多种类型的封装的半导体电路器件
公开(公告)号：US06873563B2
公开(公告)日：2005-03-29
申请号：US10390886
申请日：2003-03-19
申请人： Makoto Suwa , Junko Matsumoto , Tadaaki Yamauchi , Takeo Okamoto , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Zengcheng Tian
发明人： Makoto Suwa , Junko Matsumoto , Tadaaki Yamauchi , Takeo Okamoto , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Zengcheng Tian
IPC分类号： H01L27/04 , G11C5/00 , G11C5/02 , G11C5/06 , G11C8/00 , G11C11/34 , G11C11/401 , G11C11/406 , G11C11/407 , G11C11/409 , H01L21/822 , H01L23/50 , H01L27/10 , H02J1/00
CPC分类号： G11C5/025 , G11C7/1045 , G11C8/10 , G11C11/406 , G11C11/40618 , G11C11/4093 , G11C2207/105 , G11C2211/4061 , H01L2224/32145 , H01L2924/01019 , H01L2924/01037 , H01L2924/01068 , H01L2924/01087 , H01L2924/13091 , H01L2924/00
摘要： Data pad regions are arranged in four divided regions of a semiconductor memory chip of a rectangular shape, respectively, and data pads are selectively utilized in each of the four divided regions in accordance with a word structure. Thus, it is possible to implement a semiconductor memory chip capable of being assembled in both a single chip package and a multi chip package.
摘要翻译：数据焊盘区域分别布置在矩形的半导体存储器芯片的四个分割区域中，并且根据字结构在四个划分的区域中的每一个中选择性地使用数据焊盘。因此，可以实现能够组装在单个芯片封装和多芯片封装中的半导体存储器芯片。

8. 发明授权

US06775177B2 Semiconductor memory device switchable to twin memory cell configuration 失效
标题翻译：半导体存储器件可切换到双存储单元配置
公开(公告)号：US06775177B2
公开(公告)日：2004-08-10
申请号：US10298648
申请日：2002-11-19
申请人： Takeo Okamoto , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Makoto Suwa , Zengcheng Tian , Tadaaki Yamauchi , Junko Matsumoto
发明人： Takeo Okamoto , Tetsuichiro Ichiguchi , Hideki Yonetani , Tsutomu Nagasawa , Makoto Suwa , Zengcheng Tian , Tadaaki Yamauchi , Junko Matsumoto
IPC分类号： G11C1124
CPC分类号： G11C11/405 , G11C7/1045 , G11C8/08 , G11C8/10 , G11C11/4087
摘要： A row address decoder of a semiconductor memory device generates internal row address signals RAD and /RAD by switching most significant bit and least significant bit of row address signals RA and /RA that correspond to address signals A0 to A11, respectively. In a twin cell mode, the least significant bits RAD and /RAD of the internal row address signals corresponding to the most significant bits RA and /RA of the row address signal that are not used are selected simultaneously by row address decoder, and two adjacent word lines are activated simultaneously. Consequently, the configuration of memory cell in the semiconductor memory device can electrically be switched from the normal single memory cell type to the twin memory cell type.
摘要翻译：通过切换行地址信号RA <0:11>和/ RA的最高有效位和最低有效位，半导体存储器件的行地址解码器产生内部行地址信号RAD <0:11>和/ RAD <0:11> 分别对应于地址信号A0至A11的<0:11>。在双胞模式中，对应于不是行地址信号的最高有效位RA 11和/ RA 11的内部行地址信号的最低有效位RAD <0>和/ RAD <0> 使用的同时由行地址解码器选择，并且两个相邻的字线同时被激活。因此，半导体存储器件中的存储单元的配置可以从正常的单个存储器单元类型切换到双存储单元类型。

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