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1. 发明授权

US08940649B2 Coating treatment method, non-transitory computer storage medium and coating treatment apparatus 有权
标题翻译：涂层处理方法，非暂时性计算机存储介质和涂层处理装置
公开(公告)号：US08940649B2
公开(公告)日：2015-01-27
申请号：US13181565
申请日：2011-07-13
申请人： Kousuke Yoshihara , Shinichi Hatakeyama
发明人： Kousuke Yoshihara , Shinichi Hatakeyama
IPC分类号： H01L21/469 , H01L21/67
CPC分类号： H01L21/6715
摘要： A coating treatment method includes: a first step of rotating a substrate at a first rotation number; a second step of rotating the substrate at a second rotation number being slower than the first rotation number; a third step of rotating the substrate at a third rotation number being faster than the second rotation number and slower than the first rotation number; a fourth step of rotating the substrate at a fourth rotation number being slower than the third rotation number; and a fifth step of rotating the substrate at a fifth rotation number being faster than the fourth rotation number. A supply of a coating solution to a central portion of the substrate is continuously performed from the first step to a middle of the second step or during the first step, and the fourth rotation number is more than 0 rpm and 500 rpm or less.
摘要翻译：一种涂布处理方法，包括：以第一转数旋转基板的第一工序; 第二步骤，以比第一转数慢的第二转数旋转衬底; 第三步骤，以比所述第二转数快并且慢于所述第一转数的第三转数旋转所述衬底; 第四步骤，以比第三转数慢的第四转数旋转衬底; 以及以比第四转数快的第五转数旋转衬底的第五步骤。从第一步骤到第二步骤的中间或第一步骤期间，连续地向基材的中心部分供给涂布液，第四转数大于0rpm，500rpm以下。

2. 发明申请

US20120021611A1 COATING TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND COATING TREATMENT APPARATUS 有权
标题翻译：涂层处理方法，非终端计算机存储介质和涂层处理设备
公开(公告)号：US20120021611A1
公开(公告)日：2012-01-26
申请号：US13181565
申请日：2011-07-13
申请人： Kousuke Yoshihara , Shinichi Hatakeyama
发明人： Kousuke Yoshihara , Shinichi Hatakeyama
IPC分类号： H01L21/31 , B05C11/08
CPC分类号： H01L21/6715
摘要： A coating treatment method includes: a first step of rotating a substrate at a first rotation number; a second step of rotating the substrate at a second rotation number being slower than the first rotation number; a third step of rotating the substrate at a third rotation number being faster than the second rotation number and slower than the first rotation number; a fourth step of rotating the substrate at a fourth rotation number being slower than the third rotation number; and a fifth step of rotating the substrate at a fifth rotation number being faster than the fourth rotation number. A supply of a coating solution to a central portion of the substrate is continuously performed from the first step to a middle of the second step or during the first step, and the fourth rotation number is more than 0 rpm and 500 rpm or less.
摘要翻译：一种涂布处理方法，包括：以第一转数旋转基板的第一工序; 第二步骤，以比第一转数慢的第二转数旋转衬底; 第三步骤，以比所述第二转数快并且慢于所述第一转数的第三转数旋转所述衬底; 第四步骤，以比第三转数慢的第四转数旋转衬底; 以及以比第四转数快的第五转数旋转衬底的第五步骤。从第一步骤到第二步骤的中间或第一步骤期间，连续地向基材的中心部分供给涂布液，第四转数大于0rpm，500rpm以下。

3. 发明授权

US09162247B2 Coating and development treatment system with airflow control including control unit and movable airflow control plate 有权
标题翻译：涂装开发处理系统，包括控制单元和可移动气流控制板
公开(公告)号：US09162247B2
公开(公告)日：2015-10-20
申请号：US13448526
申请日：2012-04-17
申请人： Kousuke Yoshihara , Koji Takayanagi , Shinichi Hatakeyama , Kohei Kawakami
发明人： Kousuke Yoshihara , Koji Takayanagi , Shinichi Hatakeyama , Kohei Kawakami
IPC分类号： B05C11/00 , B05C13/02 , B05C5/00 , B05C11/02 , B05D1/00 , H01L21/67 , G03F7/16 , B05D3/12 , H01L21/00 , H01L51/00
CPC分类号： H01L21/0337 , B05C11/023 , B05D1/005 , G03F7/162 , G06F19/00 , H01L21/0271 , H01L21/6715 , H01L51/0003 , H01L2224/03418
摘要： A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.
摘要翻译：一种涂布处理装置，其将涂布溶液供给到旋转的基板的前表面，并将供给的涂布溶液扩散到基板的外周侧，从而将涂布液涂布在基板的前表面上，包括：保持基板底物; 旋转部，旋转保持在所述基板保持部上的所述基板; 供给部，其向保持在所述基板保持部的所述基板的前表面供给涂布液; 以及气流控制板，其设置在保持在所述基板保持部上的所述基板上方的预定位置，用于在任意位置局部地改变由所述旋转部旋转的所述基板上方的气流。

4. 发明申请

US20120276753A1 COATING TREATMENT APPARATUS, COATING AND DEVELOPING TREATMENT SYSTEM, COATING TREATMENT METHOD, AND NON-TRANSITORY RECORDING MEDIUM HAVING PROGRAM RECORDED THEREON FOR EXECUTING COATING TREATMENT METHOD 有权
标题翻译：涂层处理设备，涂层和开发处理系统，涂层处理方法和具有执行涂层处理方法记录的程序的非记录记录介质
公开(公告)号：US20120276753A1
公开(公告)日：2012-11-01
申请号：US13448526
申请日：2012-04-17
申请人： Kousuke YOSHIHARA , Koji Takayanagi , Shinichi Hatakeyama
发明人： Kousuke YOSHIHARA , Koji Takayanagi , Shinichi Hatakeyama
IPC分类号： H01L21/31 , G03B27/32 , B05C5/02
CPC分类号： H01L21/0337 , B05C11/023 , B05D1/005 , G03F7/162 , G06F19/00 , H01L21/0271 , H01L21/6715 , H01L51/0003 , H01L2224/03418
摘要： A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.
摘要翻译：一种涂布处理装置，其将涂布溶液供给到旋转的基板的前表面，并将供给的涂布溶液扩散到基板的外周侧，从而将涂布液涂布在基板的前表面上，包括：保持基板底物; 旋转部，旋转保持在所述基板保持部上的所述基板; 供给部，其向保持在所述基板保持部的所述基板的前表面供给涂布液; 以及气流控制板，其设置在保持在所述基板保持部上的所述基板上方的预定位置，用于在任意位置局部地改变由所述旋转部旋转的所述基板上方的气流。

5. 发明授权

US07161832B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07161832B2
公开(公告)日：2007-01-09
申请号：US11143581
申请日：2005-06-03
申请人： Junichi Kato , Masayoshi Nakayama , Takao Ozeki , Asako Miyoshi , Shinichi Hatakeyama
发明人： Junichi Kato , Masayoshi Nakayama , Takao Ozeki , Asako Miyoshi , Shinichi Hatakeyama
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C14/00 , G11C16/0441
摘要： A switch section connects a first wire line aSL to the gate of a first memory transistor 1 and the source of a second memory transistor 2 and a second wire line bSL to the source of the first memory transistor 1 and the gate of the second memory transistor 2 when first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistor 1 and the gate of the second memory transistor 2 and the second wire line bSL to the gate of the first memory transistor 1 and the source of the second memory transistor 2 when second type data is to be written into a memory cell.
摘要翻译：开关部分将第一有线线路aSL连接到第一存储晶体管1的栅极和第二存储晶体管2的源极和第二有线线路bSL连接到第一存储晶体管1的源极和第二存储晶体管的栅极当第一类数据被写入存储单元时; 并且将第一有线线路aSL连接到第一存储晶体管1的源极和第二存储晶体管2的栅极和第二有线线路bSL到第一存储晶体管1的栅极和第二存储晶体管2的源极，第二类型数据将被写入存储单元。

6. 发明申请

US20050276103A1 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20050276103A1
公开(公告)日：2005-12-15
申请号：US11143581
申请日：2005-06-03
申请人： Junichi Kato , Masayoshi Nakayama , Takao Ozeki , Asako Miyoshi , Shinichi Hatakeyama
发明人： Junichi Kato , Masayoshi Nakayama , Takao Ozeki , Asako Miyoshi , Shinichi Hatakeyama
IPC分类号： G11C11/34 , G11C14/00 , G11C16/04
CPC分类号： G11C14/00 , G11C16/0441
摘要： A switch section connects a first wire line aSL to the gate of a first memory transistor 1 and the source of a second memory transistor 2 and a second wire line bSL to the source of the first memory transistor 1 and the gate of the second memory transistor 2 when first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistor 1 and the gate of the second memory transistor 2 and the second wire line bSL to the gate of the first memory transistor 1 and the source of the second memory transistor 2 when second type data is to be written into a memory cell.
摘要翻译：开关部分将第一有线线路aSL连接到第一存储晶体管1的栅极和第二存储晶体管2的源极和第二有线线路bSL连接到第一存储晶体管1的源极和第二存储晶体管的栅极当第一类数据被写入存储单元时; 并且将第一有线线路aSL连接到第一存储晶体管1的源极和第二存储晶体管2的栅极和第二有线线路bSL到第一存储晶体管1的栅极和第二存储晶体管2的源极，第二类型数据将被写入存储单元。

7. 发明授权

US5472437A Sanitary napkin having flaps 失效
标题翻译：卫生巾有襟翼
公开(公告)号：US5472437A
公开(公告)日：1995-12-05
申请号：US249060
申请日：1994-05-25
申请人： Yoshihiro Akiyama , Shinichi Hatakeyama
发明人： Yoshihiro Akiyama , Shinichi Hatakeyama
IPC分类号： A61F13/15 , A61F13/472 , A61F13/56 , A61F13/20
CPC分类号： A61F13/5616
摘要： A sanitary napkin having side flaps is disclosed. The sanitary napkin comprises a main napkin body and flaps extending from the right and left sides of said main napkin body, the end of each of said flaps being folded with the back side thereof inside and said folded portions being releasably overlapped with an adhesive portion and a release portion in opposition thereto.
摘要翻译：公开了一种具有侧翼的卫生巾。卫生巾包括主卫生体和从主卫生巾主体的左右两侧延伸的翼片，每个翼片的端部折叠，其后侧处于内侧，所述折叠部分与粘合剂部分可释放地重叠，与其相对的释放部分。

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