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    • 3. 发明授权
    • Fuel injection system with injection characteristic learning function
    • 具有注射特性学习功能的燃油喷射系统
    • US07891337B2
    • 2011-02-22
    • US12201488
    • 2008-08-29
    • Katsuhiko TakeuchiKouji IshizukaManabu Tsujimura
    • Katsuhiko TakeuchiKouji IshizukaManabu Tsujimura
    • F02M7/00F02M51/00B60T7/12
    • F02D41/2467F02D41/1497F02D41/2438F02D2200/1012
    • A fuel injection system designed to learn the quantity of fuel sprayed actually from a fuel injector into an internal combustion engine. When the engine is placed in a given learning condition, the system works to spray different quantities of the fuel for different injection durations in sequence to the engine through the fuel injector to collect a plurality of data on the quantity of the fuel sprayed actually from the fuel injector. The system analyzes the corrected data to determine an injection characteristic of the fuel injector, which may have changed from a designer-defined basic injection characteristic of the fuel injector, and uses the injection characteristic in calculating an injection duration or on-duration for which the fuel injector is to be opened to spray a target quantity of fuel.
    • 一种燃料喷射系统,用于了解实际从燃料喷射器喷射到内燃机中的燃料量。 当发动机处于给定的学习状态时,系统通过燃料喷射器依次向不同喷射持续时间喷射不同数量的燃料以收集关于实际从喷油器喷射的燃料量的多个数据 喷油器。 该系统分析校正的数据以确定燃料喷射器的喷射特性,该喷射特性可以从燃料喷射器的设计者定义的基本喷射特性改变,并且在计算喷射持续时间或喷射持续时间时使用喷射特性, 燃料喷射器打开以喷射目标量的燃料。
    • 6. 发明申请
    • Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
    • 具有光电二极管的半导体装置及其制造方法以及光盘装置
    • US20100155875A1
    • 2010-06-24
    • US12591710
    • 2009-11-30
    • Hiroshi YumotoShuji YonedaTomokazu MukaiKatsuhiko Takeuchi
    • Hiroshi YumotoShuji YonedaTomokazu MukaiKatsuhiko Takeuchi
    • H01L31/0352H01L31/18
    • H01L31/103G11B7/13H01L27/1463H01L31/035272H03F3/087
    • A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.
    • 半导体器件包括:P型半导体衬底; 形成在P型半导体衬底上的第一P型半导体层; 形成在所述第一P型半导体层上并且具有比所述第一P型半导体层低的P型杂质浓度的第二P型半导体层; 形成在第二P型半导体层上的形成阴极区域的N型半导体层; 通过在第二P型半导体层的部分区域中扩散P型杂质形成的第一P型扩散层; 第二P型扩散层,其通过在第二P型半导体层中扩散P型杂质而形成,以便以比第一P-型半导体层低的P型杂质浓度存在于第一P型扩散层的下方, 型扩散层; 以及以使得N型半导体层和第一P型扩散层彼此隔离的方式形成的光电二极管。
    • 7. 发明授权
    • Doorframe structure
    • 门框结构
    • US07707777B2
    • 2010-05-04
    • US11088862
    • 2005-03-25
    • Katsuhiko TakeuchiAkiyoshi MoriMasashige OnoMasaru ToyotaHirokazu Kawabe
    • Katsuhiko TakeuchiAkiyoshi MoriMasashige OnoMasaru ToyotaHirokazu Kawabe
    • B60J5/04
    • B60J5/0402B60J5/0404B60J5/0408
    • A doorframe structure comprises an upper guide formed of metal plate so as to have an enclosed space extending in a longitudinal direction of the upper guide, the upper guide having a constant cross section, a weather strip channel extending in a longitudinal direction of the upper guide and fixed to the upper guide, a window glass guide, made of metal plate, arranged so as to be inclined relative to the upper guide and fixed to the upper guide at one end thereof in order to guide a window glass so as to move, and a pillar outer panel, made of metal plate, for covering, on an exterior side of a vehicle, a vehicle exterior-end surface of the upper guide, a vehicle exterior-end surface of the window glass guide and an opening formed between the upper guide and the window glass guide.
    • 门框结构包括由金属板形成的上引导件,以具有沿着上引导件的纵向方向延伸的封闭空间,上引导件具有恒定的横截面,沿上引导件的纵向方向延伸的防风条通道 并固定到上引导件,由金属板制成的窗玻璃引导件,其布置成相对于上引导件倾斜,并在其一端固定到上引导件,以引导窗玻璃移动, 以及由金属板制成的支柱外板,用于在车辆的外侧覆盖上导向件的车辆外端表面,窗玻璃引导件的车辆外端表面和形成在车辆外侧的开口之间的开口 上导板和玻璃导轨。
    • 10. 发明申请
    • CIRCUIT SYSTEM, CIRCUIT BLOCK, AND ELECTRONIC DEVICE
    • 电路系统,电路块和电子设备
    • US20100127738A1
    • 2010-05-27
    • US12569731
    • 2009-09-29
    • Katsuhiko Takeuchi
    • Katsuhiko Takeuchi
    • H03L7/00
    • G06F1/24
    • According to one embodiment, a circuit system includes an adjusted module, a circuit adjusting module, a power controller, and a set value storage module. The adjusted module operates in a circuit state adjusted by calibration. The circuit adjusting module adjusts the circuit state of the adjusted module by calibration and obtains a set value corresponding to the adjusted circuit state. The power controller stops power supply to at least the adjusted module upon transition to power saving mode and resume the power supply upon return from the power saving mode. The set value storage module non-volatilely stores the set value even in the power saving mode. The circuit adjusting module causes the set value storage module to non-volatilely store the set value upon power-on, and adjusts the circuit state of the adjusted module according to the set value upon return from the power saving mode.
    • 根据一个实施例,电路系统包括经调整的模块,电路调整模块,功率控制器和设定值存储模块。 调整后的模块工作在通过校准调整的电路状态。 电路调整模块通过校准调整调整模块的电路状态,并获得与调整后的电路状态对应的设定值。 功率控制器在切换到省电模式时至少停止对调整模块的供电,并在从省电模式返回时恢复供电。 即使在省电模式下,设定值存储模块也非易失性地存储设定值。 电路调整模块使得设定值存储模块在通电时不稳定地存储设定值,并且在从省电模式返回时根据设定值调整调整模块的电路状态。