专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06099911A Process for forming silica film 失效
标题翻译：二氧化硅膜形成工艺
公开(公告)号：US06099911A
公开(公告)日：2000-08-08
申请号：US944197
申请日：1997-10-03
申请人： Kotaro Yano , Yasuo Saito , Keiji Kawasaki
发明人： Kotaro Yano , Yasuo Saito , Keiji Kawasaki
IPC分类号： C03C17/30 , C04B41/50 , C23C18/00 , B05D3/02
CPC分类号： C23C18/00 , C04B41/5035
摘要： A process for forming a silica film on a substrate, comprising the steps of preparing a liquid composition comprising silicic acid, water, an alkali and an organic solvent, said liquid composition having a volume ratio of water to the organic solvent in a range of 0.2 to 10.0 and a concentration of silicon element in a range of 0.0001 to 5.0 mol/l; contacting a surface of a substrate with the liquid composition; and maintaining the contact between the surface of the substrate with the liquid composition to selectively deposit silica on the surface of the substrate until a silica film is formed on the surface of the substrate.
摘要翻译：一种在基板上形成二氧化硅膜的方法，包括以下步骤：制备包含硅酸，水，碱和有机溶剂的液体组合物，所述液体组合物的水与有机溶剂的体积比在0.2的范围内至10.0，并且硅元素的浓度在0.0001至5.0mol / l的范围内; 使基材的表面与液体组合物接触; 并且保持基板的表面与液体组合物之间的接触，以在基板的表面上选择性地沉积二氧化硅，直到在基板的表面上形成二氧化硅膜。

2. 发明授权

US06235270B1 Cosmetics, silica-coated metal oxide powder and production method therefor 失效
标题翻译：化妆品，二氧化硅包覆金属氧化物粉末及其制备方法
公开(公告)号：US06235270B1
公开(公告)日：2001-05-22
申请号：US09062560
申请日：1998-04-20
申请人： Nobuaki Ishii , Koichi Wada , Kazuo Sekiguchi , Michihiro Takama , Shinobu Ito , Kotaro Yano , Yasuo Saito , Keiji Kawasaki
发明人： Nobuaki Ishii , Koichi Wada , Kazuo Sekiguchi , Michihiro Takama , Shinobu Ito , Kotaro Yano , Yasuo Saito , Keiji Kawasaki
IPC分类号： A61K742
CPC分类号： C09C3/063 , A61K8/11 , A61K8/29 , A61K2800/412 , A61K2800/43 , A61Q17/04 , B82Y30/00 , C01P2002/74 , C01P2002/82 , C01P2002/84 , C01P2004/04 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C01P2006/19 , C01P2006/60 , C01P2006/90 , C09C1/043 , C09C1/22 , C09C1/24 , C09C1/3661
摘要： Cosmetics comprising silica-coated metal oxide powder having a thickness of the silica coating of 0.1 to 100 nm, and a photocatalytic activity as measured by tetralin auto-oxidation method of 6 mmH2O/min or less. Silica-coated metal oxide powder coated with a silica coating having an absorption peak intensity ratio I (I=I1/I2, wherein I1 is an absorption peak intensity at 1,150 to 1,250 cm−1 and I2 is an absorption peak intensity at 1,000 to 1,100 cm−1) between the infrared absorption spectra in the region of 1,150 to 1,250 cm−1 and the region of 1,000 to 1,100 cm−1 of 0.2 or more, and having a refractive index of 1.435 or more.
摘要翻译：包含二氧化硅涂层的厚度为0.1〜100nm的由二氧化硅被覆的金属氧化物粉末构成的化妆品，以及通过四氢环丁烷自动氧化法测定的6mmH 2 O /分钟以下的光催化活性。涂覆有二氧化硅涂层的二氧化硅涂覆的金属氧化物粉末，其具有吸收峰强度比I（I = I1 / I2，其中I1是1,150至1,250cm-1处的吸收峰强度，I2是1,000至1,100的吸收峰强度 cm -1，红外线吸收光谱在1,150〜1250cm -1的范围内，1000〜1100cm -1的区域为0.2以上，折射率为1.435以上。

3. 发明授权

US09035321B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US09035321B2
公开(公告)日：2015-05-19
申请号：US13059759
申请日：2009-08-20
申请人： Akihiro Matsuse , Kotaro Yano
发明人： Akihiro Matsuse , Kotaro Yano
IPC分类号： H01L29/24 , H01L21/28 , H01L21/04 , H01L29/45 , H01L29/47 , H01L29/66 , H01L29/872 , H01L29/06 , H01L29/16
CPC分类号： H01L21/0485 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/872
摘要： There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
摘要翻译：提供了一种包括欧姆接合层的半导体器件，其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异，因此可以与肖特基结层具有足够高的粘附性。这种半导体器件包括n型SiC半导体衬底（1），与SiC半导体衬底（1）的一侧的主表面（1b）欧姆接触的阴极电极（5），第一半导体区域 6a），其形成在SiC半导体衬底（1）的另一侧的主表面（1a）中的由p型SiC制成的第二半导体区域（6b），其形成在主表面中的n型SiC （1a），与第一半导体区域（1a）欧姆接触的欧姆结层（7）和与第二半导体区域（6b）进行肖特基接触的肖特基结层（8），其中所述欧姆接合层（7）的表面的均方根粗糙度为20nm以下。

4. 发明授权

US08929595B2 Dictionary creation using image similarity 有权
标题翻译：使用图像相似性的词典创作
公开(公告)号：US08929595B2
公开(公告)日：2015-01-06
申请号：US13459021
申请日：2012-04-27
申请人： Takashi Suzuki , Kiyotaka Takahashi , Kotaro Yano
发明人： Takashi Suzuki , Kiyotaka Takahashi , Kotaro Yano
IPC分类号： G06K9/00 , G06K9/62
CPC分类号： G06K9/00281 , G06K9/00308 , G06K9/6255
摘要： An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.
摘要翻译：一种图像识别装置，包括：获取单元，被配置为获得一个或多个图像; 检测单元，被配置为从一个或多个图像中的每一个检测目标对象图像; 切割单元，被配置为从所述目标对象图像切出一个或多个局部区域; 特征量计算单元，被配置为从一个或多个局部区域中的每一个计算特征量以识别目标对象; 相似度计算单元，被配置为针对一个或多个局部区域中的每一个计算特征量之间的相似度; 以及注册单元，被配置为如果存在相似度不小于阈值的一对特征量，则为一个或多个区域中的每一个注册所述特征量中的一个作为所述目标对象的字典数据。

5. 发明申请

US20120288148A1 IMAGE RECOGNITION APPARATUS, METHOD OF CONTROLLING IMAGE RECOGNITION APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：图像识别装置，控制图像识别装置的方法和存储介质
公开(公告)号：US20120288148A1
公开(公告)日：2012-11-15
申请号：US13459021
申请日：2012-04-27
申请人： Takashi Suzuki , Kiyotaka Takahashi , Kotaro Yano
发明人： Takashi Suzuki , Kiyotaka Takahashi , Kotaro Yano
IPC分类号： G06K9/62
CPC分类号： G06K9/00281 , G06K9/00308 , G06K9/6255
摘要： An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.
摘要翻译：一种图像识别装置，包括：获取单元，被配置为获得一个或多个图像; 检测单元，被配置为从一个或多个图像中的每一个检测目标对象图像; 切割单元，被配置为从所述目标对象图像切出一个或多个局部区域; 特征量计算单元，被配置为从一个或多个局部区域中的每一个计算特征量以识别目标对象; 相似度计算单元，被配置为针对一个或多个局部区域中的每一个计算特征量之间的相似度; 以及注册单元，被配置为如果存在相似度不小于阈值的一对特征量，则为一个或多个区域中的每一个注册所述特征量中的一个作为所述目标对象的字典数据。

6. 发明申请

US20110266558A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：硅碳化硅半导体器件及其生产碳化硅半导体器件的方法
公开(公告)号：US20110266558A1
公开(公告)日：2011-11-03
申请号：US13143218
申请日：2009-11-30
申请人： Kotaro Yano
发明人： Kotaro Yano
IPC分类号： H01L29/161 , H01L21/28
CPC分类号： H01L21/0485 , H01L29/0615 , H01L29/1608 , H01L29/45 , H01L29/6606 , H01L29/861 , H01L29/872 , H01L2224/05567 , H01L2224/06181 , H01L2924/0002 , H01L2924/12032 , H01L2924/00 , H01L2224/05552
摘要： There is provided a silicon carbide semiconductor device equipped with an ohmic electrode that exhibits both low contact resistance and favorable surface conditions, the silicon carbide semiconductor device including a p-type silicon carbide single crystal, and an ohmic electrode for the p-type silicon carbide single crystal, wherein the ohmic electrode includes an alloy layer containing at least titanium, aluminum and silicon, and ratios of titanium, aluminum, and silicon in the alloy layer are Al: 40 to 70% by mass, Ti: 20 to 50% by mass, and Si: 1 to 15% by mass.
摘要翻译：提供一种装备有表现出低接触电阻和良好的表面条件的欧姆电极的碳化硅半导体器件，包括p型碳化硅单晶的碳化硅半导体器件和用于p型碳化硅的欧姆电极单晶，其中所述欧姆电极包括至少含有钛，铝和硅的合金层，并且所述合金层中的钛，铝和硅的比率为Al：40〜70质量％，Ti：20〜50质量％质量和Si：1〜15质量％。

7. 发明申请

US20110147767A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20110147767A1
公开(公告)日：2011-06-23
申请号：US13059759
申请日：2009-08-20
申请人： Akihiro Matsuse , Kotaro Yano
发明人： Akihiro Matsuse , Kotaro Yano
IPC分类号： H01L29/24 , H01L21/28
CPC分类号： H01L21/0485 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/872
摘要： There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
摘要翻译：提供了一种包括欧姆接合层的半导体器件，其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异，因此可以与肖特基结层具有足够高的粘附性。这种半导体器件包括n型SiC半导体衬底（1），与SiC半导体衬底（1）的一侧的主表面（1b）欧姆接触的阴极电极（5），第一半导体区域 6a），其形成在SiC半导体衬底（1）的另一侧的主表面（1a）中的由p型SiC制成的第二半导体区域（6b），其形成在主表面中的n型SiC （1a），与第一半导体区域（1a）欧姆接触的欧姆结层（7）和与第二半导体区域（6b）进行肖特基接触的肖特基结层（8），其中所述欧姆接合层（7）的表面的均方根粗糙度为20nm以下。

8. 发明申请

US20100085420A1 IMAGE PROCESSING APPARATUS AND METHOD 有权
标题翻译：图像处理装置和方法
公开(公告)号：US20100085420A1
公开(公告)日：2010-04-08
申请号：US12574010
申请日：2009-10-06
申请人： Yasuhiro Kato , Shinji Shiraga , Kotaro Yano
发明人： Yasuhiro Kato , Shinji Shiraga , Kotaro Yano
IPC分类号： G06K9/34 , H04N7/14 , G06K9/46
CPC分类号： H04N7/15 , G06K9/38
摘要： An image processing apparatus obtains a difference between a partial region of an input image and a partial region of a background image, stored in a storage device, corresponding to the partial region of the input image, determines whether each partial region of the input image is a moving body region or a background region based on the difference, and combines the partial region of the input image determined as the background region and the partial region of the background image corresponding to the partial region of the input image to update the background image.
摘要翻译：图像处理装置获取与输入图像的部分区域对应的存储在存储装置中的输入图像的部分区域和背景图像的局部区域之间的差，确定输入图像的每个部分区域是否为基于差异的移动体区域或背景区域，并且将确定为背景区域的输入图像的部分区域和与输入图像的部分区域相对应的背景图像的部分区域组合以更新背景图像。

9. 发明申请

US20100014758A1 METHOD FOR DETECTING PARTICULAR OBJECT FROM IMAGE AND APPARATUS THEREOF 审中-公开
标题翻译：用于从图像及其装置检测特定对象的方法
公开(公告)号：US20100014758A1
公开(公告)日：2010-01-21
申请号：US12502921
申请日：2009-07-14
申请人： Kotaro Yano , Yasuhiro Ito
发明人： Kotaro Yano , Yasuhiro Ito
IPC分类号： G06K9/46
CPC分类号： G06K9/6292 , G06K9/00228 , G06K9/3233 , G06K9/6257
摘要： When discriminating a plurality of types of objects, a plurality of local feature quantities are extracted from local regions in an image, and positions of the local regions, and attributes according to image characteristics of the local feature quantities are stored in correspondence with each other. Then, object likelihoods with respect to a plurality of objects are determined from attributes of feature quantities in a region-of-interest, an object whose object likelihood is not less than a threshold value is determined as an object candidate, and whether an object candidate is a predetermined object is determined.
摘要翻译：当识别多种类型的对象时，从图像中的局部区域中提取多个局部特征量，并且根据局部特征量的图像特征对应地存储局部区域和属性的位置。然后，根据感兴趣区域中的特征量的属性来确定对多个对象的对象似然性，将对象可能性不小于阈值的对象确定为对象候选，以及对象候选是一个预定的对象被确定。

10. 发明授权

US07650045B2 Image processing apparatus and method 有权
标题翻译：图像处理装置及方法
公开(公告)号：US07650045B2
公开(公告)日：2010-01-19
申请号：US12273687
申请日：2008-11-19
申请人： Kotaro Yano
发明人： Kotaro Yano
IPC分类号： G06K9/40
CPC分类号： G06T5/008 , G06T2207/30201
摘要： An image processing apparatus comprises an extractor for extracting a brightness component from image data; a scale converter for obtaining a distribution of the brightness component on relatively large scale; a brightness component improver for improving the distribution of the brightness component of the image data by using the brightness component and an output of the converter; and an image reproducer for reproducing the image data by using an output of the improver as a distribution of a brightness component of a new image, wherein the apparatus further comprises a face detector for detecting a face area from the image data, and the improver adjusts a degree of improvement by using a distribution of a brightness component of the face area being an output of the detector. Thus, it is possible to automatically adjust the degree of improvement of the luminance distribution according to the image data to be processed.
摘要翻译：一种图像处理装置，包括：提取器，用于从图像数据中提取亮度分量; 用于以较大比例获得亮度分量的分布的比例转换器; 亮度分量改进器，用于通过使用亮度分量和转换器的输出来改善图像数据的亮度分量的分布; 以及图像再现器，用于通过使用改进器的输出作为新图像的亮度分量的分布来再现图像数据，其中该装置还包括用于从图像数据检测面部区域的面部检测器，并且改进器调整通过使用作为检测器的输出的面部区域的亮度分量的分布来改善程度。因此，可以根据要处理的图像数据自动调整亮度分布的改善程度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式