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    • 2. 发明授权
    • Image recognition apparatus, image recognition method, and program
    • 图像识别装置,图像识别方法和程序
    • US08861803B2
    • 2014-10-14
    • US13436585
    • 2012-03-30
    • Kotaro YanoHiroshi SatoShunsuke Nakano
    • Kotaro YanoHiroshi SatoShunsuke Nakano
    • G06K9/46G06K9/00
    • G06K9/00281
    • An image recognition apparatus includes an extraction unit configured to extract a feature quantity for each local area from an input image, a conversion unit configured to convert the feature quantity extracted by the extraction unit into a feature quantity indicating a degree with respect to an attribute for each local area, a verification unit configured to verify the feature quantity converted by the conversion unit against a feature quantity of a registered image, and an identification unit configured to identify whether the input image is identical to the registered image by integrating the verification result for each local area acquired by the verification unit.
    • 图像识别装置包括:提取单元,被配置为从输入图像中提取每个局部区域的特征量;转换单元,被配置为将由提取单元提取的特征量转换为指示相对于属性的属性的度数的特征量 每个局部区域,验证单元,被配置为验证由转换单元转换的特征量相对于注册图像的特征量;以及识别单元,被配置为通过将输入图像与登记图像相一致来识别, 验证单位获取的每个局部区域。
    • 5. 发明授权
    • Semiconductor device and manufacturing method of semiconductor device
    • 半导体器件及半导体器件的制造方法
    • US09035321B2
    • 2015-05-19
    • US13059759
    • 2009-08-20
    • Akihiro MatsuseKotaro Yano
    • Akihiro MatsuseKotaro Yano
    • H01L29/24H01L21/28H01L21/04H01L29/45H01L29/47H01L29/66H01L29/872H01L29/06H01L29/16
    • H01L21/0485H01L21/0495H01L29/0619H01L29/1608H01L29/45H01L29/47H01L29/6606H01L29/872
    • There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
    • 提供了一种包括欧姆接合层的半导体器件,其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异,因此可以与肖特基结层具有足够高的粘附性。 这种半导体器件包括n型SiC半导体衬底(1),与SiC半导体衬底(1)的一侧的主表面(1b)欧姆接触的阴极电极(5),第一半导体区域 6a),其形成在SiC半导体衬底(1)的另一侧的主表面(1a)中的由p型SiC制成的第二半导体区域(6b),其形成在主表面中的n型SiC (1a),与第一半导体区域(1a)欧姆接触的欧姆结层(7)和与第二半导体区域(6b)进行肖特基接触的肖特基结层(8) ,其中所述欧姆接合层(7)的表面的均方根粗糙度为20nm以下。
    • 6. 发明授权
    • Dictionary creation using image similarity
    • 使用图像相似性的词典创作
    • US08929595B2
    • 2015-01-06
    • US13459021
    • 2012-04-27
    • Takashi SuzukiKiyotaka TakahashiKotaro Yano
    • Takashi SuzukiKiyotaka TakahashiKotaro Yano
    • G06K9/00G06K9/62
    • G06K9/00281G06K9/00308G06K9/6255
    • An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.
    • 一种图像识别装置,包括:获取单元,被配置为获得一个或多个图像; 检测单元,被配置为从一个或多个图像中的每一个检测目标对象图像; 切割单元,被配置为从所述目标对象图像切出一个或多个局部区域; 特征量计算单元,被配置为从一个或多个局部区域中的每一个计算特征量以识别目标对象; 相似度计算单元,被配置为针对一个或多个局部区域中的每一个计算特征量之间的相似度; 以及注册单元,被配置为如果存在相似度不小于阈值的一对特征量,则为一个或多个区域中的每一个注册所述特征量中的一个作为所述目标对象的字典数据。
    • 7. 发明申请
    • IMAGE RECOGNITION APPARATUS, METHOD OF CONTROLLING IMAGE RECOGNITION APPARATUS, AND STORAGE MEDIUM
    • 图像识别装置,控制图像识别装置的方法和存储介质
    • US20120288148A1
    • 2012-11-15
    • US13459021
    • 2012-04-27
    • Takashi SuzukiKiyotaka TakahashiKotaro Yano
    • Takashi SuzukiKiyotaka TakahashiKotaro Yano
    • G06K9/62
    • G06K9/00281G06K9/00308G06K9/6255
    • An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.
    • 一种图像识别装置,包括:获取单元,被配置为获得一个或多个图像; 检测单元,被配置为从一个或多个图像中的每一个检测目标对象图像; 切割单元,被配置为从所述目标对象图像切出一个或多个局部区域; 特征量计算单元,被配置为从一个或多个局部区域中的每一个计算特征量以识别目标对象; 相似度计算单元,被配置为针对一个或多个局部区域中的每一个计算特征量之间的相似度; 以及注册单元,被配置为如果存在相似度不小于阈值的一对特征量,则为一个或多个区域中的每一个注册所述特征量中的一个作为所述目标对象的字典数据。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    • 半导体器件的半导体器件和制造方法
    • US20110147767A1
    • 2011-06-23
    • US13059759
    • 2009-08-20
    • Akihiro MatsuseKotaro Yano
    • Akihiro MatsuseKotaro Yano
    • H01L29/24H01L21/28
    • H01L21/0485H01L21/0495H01L29/0619H01L29/1608H01L29/45H01L29/47H01L29/6606H01L29/872
    • There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
    • 提供了一种包括欧姆接合层的半导体器件,其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异,因此可以与肖特基结层具有足够高的粘附性。 这种半导体器件包括n型SiC半导体衬底(1),与SiC半导体衬底(1)的一侧的主表面(1b)欧姆接触的阴极电极(5),第一半导体区域 6a),其形成在SiC半导体衬底(1)的另一侧的主表面(1a)中的由p型SiC制成的第二半导体区域(6b),其形成在主表面中的n型SiC (1a),与第一半导体区域(1a)欧姆接触的欧姆结层(7)和与第二半导体区域(6b)进行肖特基接触的肖特基结层(8) ,其中所述欧姆接合层(7)的表面的均方根粗糙度为20nm以下。