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1. 发明授权

US06518908B2 Method and device for analog-to-digital conversion of a signal 失效
标题翻译：用于信号的模数转换的方法和装置
公开(公告)号：US06518908B2
公开(公告)日：2003-02-11
申请号：US09798025
申请日：2001-02-22
申请人： Konrad Boehm , Johann-Friedrich Luy , Thomas Mueller
发明人： Konrad Boehm , Johann-Friedrich Luy , Thomas Mueller
IPC分类号： H03M112
CPC分类号： H03M1/12
摘要： A method for analog-to-digital conversion of an analog signal includes decomposing the signal in the time domain into intervals, and transforming these intervals one after another using orthogonal functions, the coefficients corresponding to the orthogonal functions being defined and digitized. The transformed signal is then inversely transformed in the digital domain using the digitized coefficients and the same or different orthogonal functions. A high level of performance with respect to bandwidth and resolution may be achieved.
摘要翻译：用于模拟信号的模数转换的方法包括将时域中的信号分解为间隔，并且使用正交函数将这些间隔逐一变换，对应于正交函数的系数被定义和数字化。然后使用数字化系数和相同或不同的正交函数在数字域中逆变换变换的信号。可以实现关于带宽和分辨率的高水平的性能。

2. 发明授权

US06483450B2 Method and device for digital-to-analog conversion of a signal 失效
标题翻译：用于信号的数模转换的方法和装置
公开(公告)号：US06483450B2
公开(公告)日：2002-11-19
申请号：US09880215
申请日：2001-06-13
申请人： Konrad Boehm , Johann-Friedrich Luy , Thomas Mueller
发明人： Konrad Boehm , Johann-Friedrich Luy , Thomas Mueller
IPC分类号： H03M166
CPC分类号： H03M1/662
摘要： A method for digital-to-analog conversion of a digital signal (xd(ti)) comprises resolving the signal (xd(ti)) in the time region into intervals and successively transforming these intervals on the basis of orthogonal functions (gjd(t)). Coefficients (ajd) associated with the orthogonal functions (gjd(t)) are determined and converted from digital to analog and the signal (xa(t)) is transformed back in the analog region on the basis of analog coefficients (aj), which result therefrom, by means of orthogonal functions (hj(t)).
摘要翻译：一种用于数字信号（xd（ti））的数模转换的方法包括将时区中的信号（xd（ti））分解为间隔，并且基于正交函数（gjd（t ））。确定与正交函数（gjd（t））相关联的系数（ajd）并将其从数字转换为模拟，并且基于模拟系数（aj）将信号（xa（t））变换回模拟区域，其中通过正交函数（hj（t））得到。

3. 发明授权

US06255674B1 Silicon-germanium heterobipolar transistor with a step-wise graded base 有权
标题翻译：具有逐步分级基极的硅锗异双极晶体管
公开(公告)号：US06255674B1
公开(公告)日：2001-07-03
申请号：US09323141
申请日：1999-06-01
申请人： Johann-Friedrich Luy , Helmut Jorke
发明人： Johann-Friedrich Luy , Helmut Jorke
IPC分类号： H01L29737
CPC分类号： H01L29/7378
摘要： A silicon-germanium heterobipolar transistor has a silicon emitter 1, a silicon-germanium base 2 and a silicon collector 3 such that, starting from the emitter 1, the base 2 includes a change in the Ge content in the form of a step-wise increase, and a likewise step-wise, but opposing, change in the doping concentration, with a step height that is larger, seen in terms of energy, than the energy of the optical phonon energy of the semiconductor material.
摘要翻译：硅锗异质晶体管具有硅发射极1，硅 - 锗基底2和硅收集器3，使得从发射极1开始，基底2包括逐步形式的Ge含量的变化增加，并且同样逐步但相反的掺杂浓度的变化，具有比能量方面更大的阶跃高度，比半导体材料的光学声子能量的能量更大。

4. 发明授权

US5905471A Active receiving antenna 失效
标题翻译：有源接收天线
公开(公告)号：US5905471A
公开(公告)日：1999-05-18
申请号：US891824
申请日：1997-07-14
申请人： Erwin Biebl , Johann-Friedrich Luy
发明人： Erwin Biebl , Johann-Friedrich Luy
IPC分类号： H01Q1/32 , H01Q13/10 , H01Q23/00 , H01Q13/12
CPC分类号： H01Q13/10 , H01Q1/3275 , H01Q23/00
摘要： An active receiving antenna for vehicles, including a slot-shaped antenna cut into the metallic vehicle body, and having small-depth cavity filled with a dielectric material which closes off the antenna toward the back or interior of the vehicle. A low-noise preamplifier, which is integrated into the dielectric material, is connected to the antenna via two feed lines of different length. The desired polarizations of the received signals are set via this preamplifier, which can be changed over and be switched off.
摘要翻译：一种用于车辆的主动接收天线，包括切入金属车体的槽形天线，并且具有填充有电介质材料的小深度腔体，该电介质材料将天线封闭到车辆的后部或内部。集成在电介质材料中的低噪声前置放大器通过两根不同长度的馈线连接到天线。通过该前置放大器来设置接收信号的期望的极化，该前置放大器可以被切换并被切断。

5. 发明授权

US5697069A Transmit-receiver switch 失效
标题翻译：发送接收器开关
公开(公告)号：US5697069A
公开(公告)日：1997-12-09
申请号：US726421
申请日：1996-10-07
申请人： Konrad Bohm , Rainer Gotzfried , Johann-Friedrich Luy
发明人： Konrad Bohm , Rainer Gotzfried , Johann-Friedrich Luy
IPC分类号： H03K17/60 , H04B1/44 , H04B1/48
CPC分类号： H04B1/48
摘要： A transmit-receive switch which can be integrated. The receive diplexer of the switch comprises a parallel resonant circuit which can be completed or connected into the switch via a heterobipolar transistor. The transmit diplexer includes a series resonant circuit or a parallel resonant circuit which is connected into the switch circuit via a further heterobipolar transistor. Each of the heterobipolar transistors is rendered conductive or non-conductive via the applied HF power. That is, a high HF power, as is present in the transmission case, causes the respective transistor to become conductive and via the respective resonant circuits, cause the receive diplexer to become high impedance and block any signal, and cause the transmit diplexer to become low impedance and pass the high HF power substantially undampened. Conversely if the power is low, as is present in the reception case, the respective transistors become blocking and via the respective resonant circuits cause the receiver diplexer to become low impedance and conduct the received energy substantially undampened to a receiver, and cause the transmit diplexer to block the passage of the received power to a transmitter.
摘要翻译：可集成的发送 - 接收开关。开关的接收双工器包括可以通过异双极晶体管完成或连接到开关中的并联谐振电路。发射双工器包括串联谐振电路或并联谐振电路，其经由另外的异双极晶体管连接到开关电路中。每个异双极晶体管通过所施加的HF功率被导通或不导电。也就是说，如在变速箱中存在的高的HF功率使得各个晶体管变得导电并且经由各个谐振电路，使接收双工器变得高阻抗并阻止任何信号，并且使发射双工器成为低阻抗并且通过高HF功率基本上没有衰减。相反，如果在接收情况下存在功率低，则各个晶体管变得阻塞，并且经由各个谐振电路使得接收机双工器变得低阻抗并且将接收的能量基本上未被衰减地接收到接收机，并且使得发射双工器以阻止接收的功率通过发射机。

6. 发明申请

US20060114146A1 Multi-targeting method and multi-targeting sensor device for locating short-range target objects in terms of distance and angle 审中-公开
标题翻译：多目标方法和多目标传感器设备，用于在距离和角度方面定位短距离目标对象
公开(公告)号：US20060114146A1
公开(公告)日：2006-06-01
申请号：US10538731
申请日：2003-12-02
申请人： Stefan Lindenmeier , Johann-Friedrich Luy
发明人： Stefan Lindenmeier , Johann-Friedrich Luy
IPC分类号： G01S13/08
CPC分类号： G01S13/422 , G01S13/003 , G01S13/878 , G01S13/931
摘要： A multi-targeting method for locating short-range target objects in terms of distance and angle. The method includes the following steps: a) a characteristic signal is emitted by a transmitting antenna of a first sensor element; b) the reflected characteristic signal is received by at least two adjacent reception antennae of the first sensor element; c) the difference in transit time of the reflected characteristic signal to the two adjacent reception antenna of the first sensor element is measured in order to determine the distance between the target objects and the first sensor element; and d) the phase differences of the characteristic signal between the two adjacent reception antenna of the first sensor element are measured in order to determine the angles between the target objects and the first sensor element. In addition, a device for implementing the above-mentioned method.
摘要翻译：用于根据距离和角度定位短距离目标对象的多目标方法。该方法包括以下步骤：a）特征信号由第一传感器元件的发射天线发射; b）反射特征信号由第一传感器元件的至少两个相邻的接收天线接收; c）测量反射特征信号与第一传感器元件的两个相邻接收天线的传播时间差，以便确定目标对象与第一传感器元件之间的距离; 以及d）测量第一传感器元件的两个相邻接收天线之间的特征信号的相位差，以便确定目标对象和第一传感器元件之间的角度。另外，实现上述方法的装置。

7. 发明授权

US4857972A Impatt diode 失效
标题翻译： Impatt二极管
公开(公告)号：US4857972A
公开(公告)日：1989-08-15
申请号：US105952
申请日：1987-09-28
申请人： Helmut Jorke , Johann-Friedrich Luy
发明人： Helmut Jorke , Johann-Friedrich Luy
IPC分类号： H01L29/165 , H01L29/864
CPC分类号： H01L29/165 , H01L29/864
摘要： An IMPATT diode having Si-SiGe heterostructure grown on a Si substrate with the SiGe layer being disposed in the generation zone of the IMPATT diode. The SiGe layer may be replaced by a Si/SiGe superlattice.
摘要翻译：具有在Si衬底上生长的Si-SiGe异质结构的IMPATT二极管，其中SiGe层设置在IMPATT二极管的生成区中。 SiGe层可以被Si / SiGe超晶格代替。

8. 发明授权

US07248839B2 Arrangement for operating various terminal devices 失效
标题翻译：各种终端设备的安排
公开(公告)号：US07248839B2
公开(公告)日：2007-07-24
申请号：US10297565
申请日：2001-06-06
申请人： Johann-Friedrich Luy , Thomas Müller , Stephan Mayer , Günter Reichert
发明人： Johann-Friedrich Luy , Thomas Müller , Stephan Mayer , Günter Reichert
IPC分类号： H04B1/46
CPC分类号： H03H11/342 , H01P1/213 , H04B1/38
摘要： In a first embodiment, the invention relates to an arrangement for operating a plurality of terminal devices (6) on a common antenna (4) with a coupling network (2) comprising a first separator (8) associated with the antenna (4) and a second separator (10) associated with the respective terminal (6). In a second embodiment, the invention relates to an arrangement for operating a plurality of terminal devices (6) on a common transmitting antenna (4″) and on a common receiving antenna (4) which is separate from the common transmitting antenna (4″) with a coupling network (2) comprising a separator (10) which is associated with the respective terminal.
摘要翻译：在第一实施例中，本发明涉及一种用于在公共天线（4）上操作多个终端设备（6）的装置，其中耦合网络（2）包括与天线（4）相关联的第一分离器（8）和与相应端子（6）相关联的第二分隔器（10）。在第二实施例中，本发明涉及一种用于在公共发射天线（4“）和公用接收天线（4）上操作多个终端设备（6）以及与公共发射天线（4）分离的装置（2）包括与相应终端相关联的分离器（10）。

9. 发明授权

US06625230B1 Multi-frequency superposition receiver method 失效
标题翻译：多频叠加接收机方法
公开(公告)号：US06625230B1
公开(公告)日：2003-09-23
申请号：US09389074
申请日：1999-09-02
申请人： Konrad Böhm , Johann-Friedrich Luy , Thomas Müller
发明人： Konrad Böhm , Johann-Friedrich Luy , Thomas Müller
IPC分类号： H04L2722
CPC分类号： H04L27/2275 , H04L1/04
摘要： A method of receiving data signals having identical contents and different frequencies. The frequency position of the data signals is analyzed by means of an FFT, and the signals are down-converted to the same intermediate frequency. The frequencies are selected such that the partial waves are constructively superpositioned, thereby improving the signal-noise ratio in the sum.
摘要翻译：一种接收具有相同内容和不同频率的数据信号的方法。通过FFT分析数据信号的频率位置，并将信号下变频至相同的中频。频率被选择为使得部分波被建设性地叠加，从而提高了总和中的信噪比。

10. 发明授权

US4959328A Method for manufacturing a semiconductor component contactable on both sides 失效
标题翻译：用于制造在两侧可接触的半导体组件的方法
公开(公告)号：US4959328A
公开(公告)日：1990-09-25
申请号：US199922
申请日：1988-05-27
申请人： Wolfgang Behr , Johann-Friedrich Luy , Karl Strohm
发明人： Wolfgang Behr , Johann-Friedrich Luy , Karl Strohm
IPC分类号： H01L21/20 , H01L21/306 , H01L29/167 , H01L29/864
CPC分类号： H01L21/30608 , H01L29/167 , H01L29/864 , Y10S438/977
摘要： A method for manufacturing semiconductor components contactable on both sides, in particular IMPATT diodes. The active silicon layers of the IMPATT diode are grown onto a silicon substrate. The first silicon layer grown onto the silicon substrate has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed. The boron/germanium doping of the first silicon layer compensates for the mechanical stress in the silicon layer generated by the boron doping.
摘要翻译：一种用于制造在两侧可接触的半导体组件的方法，特别是IMPATT二极管。 IMPATT二极管的活性硅层生长在硅衬底上。在硅衬底上生长的第一硅层具有高硼/锗掺杂水平，并且当去除衬底时用作顶层的蚀刻。第一硅层的硼/锗掺杂补偿由硼掺杂产生的硅层中的机械应力。

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