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    • 2. 发明授权
    • Method of preparing a compound semiconductor crystal
    • 化合物半导体晶体的制备方法
    • US06485563B2
    • 2002-11-26
    • US09765557
    • 2001-01-19
    • Tomohiro KawaseShinichi SawadaMasami Tatsumi
    • Tomohiro KawaseShinichi SawadaMasami Tatsumi
    • C30B900
    • C30B29/42C30B11/06C30B11/12
    • A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.
    • 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤:将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中,增加容器的温度以熔化密封在容器中的化合物半导体材料,然后将 使熔融的化合物半导体材料固化,生长含有规定量的碳的化合物半导体晶体。 通过该方法,以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。
    • 4. 发明授权
    • Method of preparing a compound semiconductor crystal
    • 化合物半导体晶体的制备方法
    • US06273947B1
    • 2001-08-14
    • US09274286
    • 1999-03-22
    • Tomohiro KawaseShinichi SawadaMasami Tatsumi
    • Tomohiro KawaseShinichi SawadaMasami Tatsumi
    • C30B900
    • C30B29/42C30B11/06C30B11/12
    • A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015 cm−3 to 20×1015 cm−3 is prepared with high reproducibility.
    • 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤:将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中,增加容器的温度以熔化密封在容器中的化合物半导体材料,然后将 使熔融的化合物半导体材料固化,生长含有规定量的碳的化合物半导体晶体。 通过该方法,以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。
    • 5. 再颁专利
    • Method of preparing a compound semiconductor crystal
    • 化合物半导体晶体的制备方法
    • USRE42279E1
    • 2011-04-12
    • US12341876
    • 2008-12-22
    • Tomohiro KawaseShinichi SawadaMasami Tatsumi
    • Tomohiro KawaseShinichi SawadaMasami Tatsumi
    • C30B9/00
    • C30B29/42C30B11/06C30B11/12
    • A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.
    • 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤:将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中,增加容器的温度以熔化密封在容器中的化合物半导体材料,然后将 使熔融的化合物半导体材料固化,生长含有规定量的碳的化合物半导体晶体。 通过该方法,以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。
    • 8. 发明申请
    • MOBILE STATION DIRECTED TO WIRELESS COMMUNICATION SYSTEM INCLUDING HOME CELL
    • 移动站指向无线通信系统,包括家庭电话
    • US20130190012A1
    • 2013-07-25
    • US13876860
    • 2011-09-30
    • Koki SuzukiShinichi SawadaHirokazu KobayashiShigeto SuzukiAkio Yoshihara
    • Koki SuzukiShinichi SawadaHirokazu KobayashiShigeto SuzukiAkio Yoshihara
    • H04W64/00
    • H04W64/00H04W36/04H04W36/32H04W84/045
    • A mobile station connected to a wireless communication network includes a surrounding environment recording unit configured to record a surrounding environment of the mobile station; a proximity determination unit; and a proximity indication generation unit configured to generate a proximity indication. The proximity determination unit compares a past surrounding environment record that has been recorded by the surrounding environment recording unit with the current surrounding environment record. When the surrounding environment records correspond to each other, or when a degree of similarity between the surrounding environment records exceeds a predetermined degree, the proximity determination unit determines that the mobile station is in proximity to a predetermined home cell base station, and transmits the proximity indication generated by the proximity indication generating unit to a macro cell base station in response to determination that the mobile station is in proximity to the predetermined home cell base station.
    • 连接到无线通信网络的移动站包括被配置为记录移动站的周围环境的周边环境记录单元; 接近度确定单元; 以及接近指示生成单元,被配置为生成接近指示。 接近确定单元将周围环境记录单元记录的过去周围环境记录与当前周围环境记录进行比较。 当周围环境记录彼此对应时,或者当周围环境记录之间的相似程度超过预定程度时,接近度确定单元确定移动站处于预定的家庭小区基站附近,并且发送接近 响应于确定移动台处于预定的家庭小区基站附近,由接近指示产生单元产生的指示给宏小区基站。