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1. 发明授权

US5521148A Oxide superconducting material, process for preparing the same and applications thereof 失效
标题翻译：氧化物超导材料，其制备方法及其应用
公开(公告)号：US5521148A
公开(公告)日：1996-05-28
申请号：US771839
申请日：1991-10-08
申请人： Yasuko Torii , Kengo Ohkura , Toshihiro Kotani
发明人： Yasuko Torii , Kengo Ohkura , Toshihiro Kotani
IPC分类号： C04B35/00 , C01G1/00 , C01G15/00 , C01G29/00 , C04B35/45 , C04B35/653 , H01B12/04 , H01B13/00 , H01F1/00 , H01L39/12 , H01L39/24 , H01B12/00
CPC分类号： H01L39/248 , C04B35/4512 , C04B35/4517 , C04B35/4521 , C04B35/4525 , C04B35/653 , H01L39/126 , H01L39/2419 , Y10S505/729 , Y10S505/782 , Y10S505/783 , Y10S505/879
摘要： Novel superconducting oxide material containing compound oxide having a composition represented by the formula:[(Tl.sub.1-x Bi.sub.x).sub.1-p .alpha..sub.p ].sub.q Sr.sub.y Ca.sub.z Cu.sub.v O.sub.win which ".alpha." is at least one element selected from a group consisting of In, Sn, Sb, Pb, Y and lanthanide elements and "x", "y", "z", "p", "q", and "v" are numbers each satisfying respective range of 0.1.ltoreq.x.ltoreq.0.5, 0.5.ltoreq.y.ltoreq.4.0, 0.5.ltoreq.z.ltoreq.4.5, 0.ltoreq.p.ltoreq.0.6, 0.5.ltoreq.q.ltoreq.3.0, and 1.0.ltoreq.v.ltoreq.5.5.
摘要翻译：含有具有下式表示的组成的复合氧化物的新型超导氧化物材料：[（Tl1-xBix）1-p] p] qSryCazCuvOw其中“α”是选自由In，Sn，Sb， Pb，Y和镧系元素，“x”，“y”，“z”，“p”，“q”和“v”分别满足0.1≤x≤0.5,0.5， /=y

2. 发明授权

US4944834A Process of pulling a crystal 失效
标题翻译：拉晶的过程
公开(公告)号：US4944834A
公开(公告)日：1990-07-31
申请号：US218457
申请日：1988-07-07
申请人： Kohji Tada , Toshihiro Kotani
发明人： Kohji Tada , Toshihiro Kotani
IPC分类号： C30B15/24 , C30B15/10 , C30B15/14 , C30B15/22 , C30B27/02 , C30B29/40 , C30B29/48 , H01L21/18 , H01L21/208
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1052
摘要： In a process for pulling a crystal such as Si, Ge, GaAs, InP, GaP, InAs, AlAs, CdTe, CdSe, ZnTe, HgTe, MnTe, Gd.sub.3 Ga.sub.5 O.sub.12, Bi.sub.12 SiO.sub.20 and LiNbO.sub.3 from a raw material melt within a baffle plate whose bore diameter is gradually increased upward and which is arranged in such a manner that the melt inside and outside the baffle plate is in communication with each other through the small opening part at the end thereof, the baffle plate is moved relatively to the surface of the melt so as to increase the diameter of the melt surface inside the baffle plate with the increase of the diameter of the pulled crystal at the solid-liquid interface.
摘要翻译：在将孔内径的挡板内的原料熔体中拉出诸如Si，Ge，GaAs，InP，GaP，InAs，AlAs，CdTe，CdSe，ZnTe，HgTe，MnTe，Gd3Ga5O12，Bi12SiO20和LiNbO3的晶体的工艺中，逐渐向上增加，并且以使得挡板内侧和外侧的熔体通过其端部处的小开口部彼此连通的方式配置，挡板相对于熔体的表面移动，从而以便随着固 - 液界面处的拉晶的直径的增加，增加挡板内熔体表面的直径。

3. 发明授权

US4528061A Process for manufacturing boron-doped gallium arsenide single crystal 失效
标题翻译：硼掺杂砷化镓单晶的制造工艺
公开(公告)号：US4528061A
公开(公告)日：1985-07-09
申请号：US485355
申请日：1983-04-15
申请人： Shintaro Miyazawa , Yasushi Nanishi , Kohji Tada , Akihisa Kawasaki , Toshihiro Kotani
发明人： Shintaro Miyazawa , Yasushi Nanishi , Kohji Tada , Akihisa Kawasaki , Toshihiro Kotani
IPC分类号： C30B27/02 , C30B29/42 , H01L21/18 , H01L21/208 , C30B15/04
CPC分类号： C30B27/02 , C30B29/42
摘要： A process for manufacturing boron-doped GaAs single crystals which comprises preparing a mixture of boron, gallium and arsenic covered by a liquid B.sub.2 O.sub.3 encapsulant, melting the mixture, pulling up boron-doped GaAs crystals from the mixture melts in accordance with the LEC method, crushing those crystals into small pieces after removing the seed end therefrom, remelting those pieces in the presence of B.sub.2 O.sub.3, and pulling up single crystals from the mixture melts in accordance with the LEC method.
摘要翻译：一种硼掺杂GaAs单晶的制造方法，其包括制备由液体B 2 O 3密封剂覆盖的硼，镓和砷的混合物，熔融混合物，从混合物中拉出掺杂硼的GaAs晶体根据LEC方法熔融，从中除去种子末端后，将这些晶体粉碎成小块，在B2O3存在下重熔这些晶片，并从混合物中拉出单晶，按照LEC方法熔化。

4. 发明授权

US5849672A Oxide superconducting material, process for preparing the same and applications thereof 失效
标题翻译：氧化物超导材料，其制备方法及其应用
公开(公告)号：US5849672A
公开(公告)日：1998-12-15
申请号：US565762
申请日：1995-11-30
申请人： Yasuko Torii , Kengo Ohkura , Toshihiro Kotani
发明人： Yasuko Torii , Kengo Ohkura , Toshihiro Kotani
IPC分类号： C04B35/00 , C01G1/00 , C01G15/00 , C01G29/00 , C04B35/45 , C04B35/653 , H01B12/04 , H01B13/00 , H01F1/00 , H01L39/12 , H01L39/24 , H01B12/00
CPC分类号： H01L39/248 , C04B35/4512 , C04B35/4517 , C04B35/4521 , C04B35/4525 , C04B35/653 , H01L39/126 , H01L39/2419 , Y10S505/729 , Y10S505/782 , Y10S505/783 , Y10S505/879
摘要： Novel superconducting oxide material containing compound oxide having a composition represented by the formula: �(Tl.sub.1-x Bi.sub.x).sub.1-p .alpha..sub.p !.sub.q Sr.sub.y Ca.sub.z Cu.sub.v O.sub.w in which ".alpha." is at least one element selected from a group consisting of In, Sn, Sb, Pb, Y and lanthanide elements and "x", "y", "z", "p", "q", "v" and "w" are numbers each satisfying respective range of 0.ltoreq.x.ltoreq.1.0, 0.5.ltoreq.y.ltoreq.4.0, 0.5.ltoreq.z.ltoreq.4.5, 0.ltoreq.p.ltoreq.0.6, 0.5.ltoreq..ltoreq.3.0, and 1.0.ltoreq.v.ltoreq.5.5.
摘要翻译：含有具有下式表示的组成的复合氧化物的新型超导氧化物材料：[（Tl1-xBix）1-p] p] qSryCazCuvOw其中“α”是选自由In，Sn，Sb， Pb，Y和镧系元素，“x”，“y”，“z”，“p”，“q”，“v”和“w”分别满足0≤x≤1.0 ，0.5≤y≤4.0,0.5≤z≤4.5,0≤p≤0.6,0.5≤3.0,0.0≤v≤5.5 。

5. 发明授权

US5524571A Method for synthesizing compound semiconductor polycrystals and apparatus therefor 失效
标题翻译：化合物半导体多晶体的合成方法及其设备
公开(公告)号：US5524571A
公开(公告)日：1996-06-11
申请号：US478016
申请日：1990-02-09
申请人： Akihisa Kawasaki , Toshihiro Kotani
发明人： Akihisa Kawasaki , Toshihiro Kotani
IPC分类号： B01J3/04 , C01B19/00 , C01B25/08 , C01G9/08 , C22C1/00 , C30B15/02
CPC分类号： C22C1/007 , B01J3/04 , C01B19/007 , C01B25/087 , C01G9/08 , Y10T117/1052
摘要： Herein disclosed are apparatuses for manufacturing compound semiconductor polycrystals comprising a pressure vessel, an upper shaft, a container for a first component fixed to the upper shaft, a heater around the container, a lower shaft, a susceptor and a crucible for charging a second component, a heater for the crucible and a communicating pipe for spatially connecting the container and the crucible optionally provided with a porous member at the lower extremity and/or a cylindrical member for confining a space over a part of the melt surface contained in the crucible from the remaining inner space of the vessel, the apparatuses permitting the substantial reduction of the reaction time and an improvement of the yield of the polycrystals due to the presence of the porous member and/or the cylindrical member separating the inner space of the vessel into two portions.
摘要翻译：本文公开了用于制造化合物半导体多晶体的装置，包括压力容器，上轴，用于固定到上轴的第一部件的容器，容器周围的加热器，下轴，基座和用于对第二部件充电的坩埚，用于坩埚的加热器和用于空间连接容器和坩埚的连通管，所述坩埚在下端和/或圆柱形构件上任选地设置有多孔构件，用于限制坩埚中包含的熔体表面的一部分上的空间，容器的剩余内部空间，允许显着减少反应时间的装置以及由于多孔构件和/或将容器的内部空间分离成两个的圆柱形构件的存在而导致的多晶体的产量的提高部分。

6. 发明授权

US4678534A Method for growing a single crystal 失效
标题翻译：生长单晶的方法
公开(公告)号：US4678534A
公开(公告)日：1987-07-07
申请号：US733361
申请日：1985-05-13
申请人： Koji Tada , Masami Tatsumi , Toshihiro Kotani , Shinichi Sawada
发明人： Koji Tada , Masami Tatsumi , Toshihiro Kotani , Shinichi Sawada
IPC分类号： C30B15/10 , C30B27/02 , C30B29/40 , C30B29/48 , H01L21/02 , H01L21/208
CPC分类号： C30B15/10 , C30B27/02 , C30B29/40 , Y10S117/907 , Y10T117/106
摘要： A modified liquid encapsulated Czockralski method for growing a single crystal of compound semiconductor is disclosed. This method uses two vessels. An inner vessel is filled with an inactive gas, a gas of an element of group V and optionally an impurity gas. The inner vessel encloses a crucible containing compound semiconductor material, an encapsulant material, and optionally an impurity element. An outer vessel is filled only with the inactive gas. The total pressure of the inner atmosphere is equal to or higher than that of the outer atmosphere. The partial pressure of the gas of the element of group V is larger than the dissociation pressure of the element of group V near the melting point of the compound semiconductor.
摘要翻译：公开了用于生长化合物半导体的单晶的改进的液体封装的Czockralski方法。这种方法使用两个血管。内部容器填充有惰性气体，第V族元素的气体和任选的杂质气体。内部容器包含含有化合物半导体材料的坩埚，密封剂材料和任选的杂质元素。外部容器仅用惰性气体填充。内部气氛的总压力等于或高于外部气氛的总压力。 V族元素的气体分压大于化合物半导体熔点附近的V族元素的离解压力。

7. 发明申请

US20110108852A1 GaN SUBSTRATE AND LIGHT-EMITTING DEVICE 有权
标题翻译： GaN衬底和发光器件
公开(公告)号：US20110108852A1
公开(公告)日：2011-05-12
申请号：US12981939
申请日：2010-12-30
申请人： Shinsuke FUJIWARA , Toshihiro Kotani , Fumitake Nakanishi , Seiji Nakahata , Koji Uematsu
发明人： Shinsuke FUJIWARA , Toshihiro Kotani , Fumitake Nakanishi , Seiji Nakahata , Koji Uematsu
IPC分类号： H01L33/32
CPC分类号： C30B25/00 , C30B29/406 , H01L33/32
摘要： The present GaN substrate can have an absorption coefficient not lower than 7 cm−1 for light having a wavelength of 380 nm and light having a wavelength of 1500 nm, an absorption coefficient lower than 7 cm−1 for at least light having a wavelength not shorter than 500 nm and not longer than 780 nm, and specific resistance not higher than 0.02 Ωcm. Here, the absorption coefficient for light having a wavelength not shorter than 500 nm and not longer than 780 nm can be lower than 7 cm−1. Thus, a GaN substrate having a low absorption coefficient for light having a wavelength within a light emission wavelength region of a light-emitting device and specific resistance not higher than a prescribed value and being suitable for the light-emitting device is provided.
摘要翻译：对于波长为380nm的光和波长为1500nm的光，对于至少具有波长不为波长的光，吸收系数低于7cm -1，本GaN基板的吸收系数不低于7cm -1 小于500nm且不大于780nm，电阻率不高于0.02＆OHgr; cm。这里，波长不小于500nm且不大于780nm的光的吸收系数可以低于7cm -1。因此，提供了具有低于发光器件的发光波长区域内的波长的光的吸收系数低的规定值并且不高于规定值并且适用于发光器件的GaN衬底。

8. 发明授权

US4873062A Apparatus for the growth of single crystals 失效
标题翻译：单晶生长装置
公开(公告)号：US4873062A
公开(公告)日：1989-10-10
申请号：US625537
申请日：1984-06-28
申请人： Toshihiro Kotani , Kohji Tada
发明人： Toshihiro Kotani , Kohji Tada
IPC分类号： C30B15/00 , C30B15/10
CPC分类号： C30B15/10 , C30B29/40 , Y10S117/90 , Y10T117/106 , Y10T117/1064
摘要： In an apparatus for the Czochralsky growth of compound single crystals wherein a single crystal growing portion is provided in a sealed vessel whose opening part is sealed by a B.sub.2 O.sub.3 melt and which contains therein an atmosphere of a volatile element of the compound, at least the inner wall the sealed vessel is made of a material having a melting point of at least 1400.degree. C., selected from Group III-V compounds and oxides of Group III or V elements. Compound single crystals such as GaAs, GaP, InAs, InP, ZnS, ZnSe and CdS obtained by the use of this apparatus are free from contamination with silicon.
摘要翻译：在用于化合物单晶的切克劳斯基生长的装置中，其中单晶生长部分设置在密封容器中，其密封容器的开口部分由B 2 O 3熔体密封并且其中含有化合物的挥发性元素的气氛，至少内部密封容器的壁由熔点为至少1400℃的材料制成，选自III-V族化合物和III族或V族元素的氧化物。通过使用该装置获得的化合物单晶如GaAs，GaP，InAs，InP，ZnS，ZnSe和CdS不受硅污染。

9. 发明授权

US4863554A Process for pulling a single crystal 失效
标题翻译：拉制单晶的工艺
公开(公告)号：US4863554A
公开(公告)日：1989-09-05
申请号：US17072
申请日：1987-02-20
申请人： Akihisa Kawasaki , Toshihiro Kotani , Ryusuke Nakai , Shintaro Miyazawa , Keigo Hoshikawa
发明人： Akihisa Kawasaki , Toshihiro Kotani , Ryusuke Nakai , Shintaro Miyazawa , Keigo Hoshikawa
IPC分类号： C30B15/14 , C30B27/02 , H01L21/208
CPC分类号： C30B15/14
摘要： An apparatus for pulling a single crystal by CZ method or LEC method is improved. To this end, the heater for heating the inside of the furnace is divided at least in the vicinity of the solid-liquid interface into at least two heaters. Using this apparatus, a single crystal with a decreased dislocation density can be obtained.
摘要翻译：通过CZ法或LEC法提取单晶的装置得到改善。为此，用于加热炉内部的加热器至少在固 - 液界面附近分成至少两个加热器。使用该装置，可以获得具有降低的位错密度的单晶。

10. 发明授权

US4684515A Single crystal article 失效
标题翻译：单晶制品
公开(公告)号：US4684515A
公开(公告)日：1987-08-04
申请号：US727391
申请日：1985-04-24
申请人： Akihisa Kawasaki , Kohji Tada , Toshihiro Kotani , Shintaro Miyazawa
发明人： Akihisa Kawasaki , Kohji Tada , Toshihiro Kotani , Shintaro Miyazawa
IPC分类号： C30B15/00 , C30B15/14 , C30B27/02 , H01L21/208 , C01F1/00 , C30B29/40
CPC分类号： C30B15/14
摘要： A single crystal is prepared by drawing up a single crystal by the Czochralski process and cooling it at a temperature not lower than 600.degree. C. in vacuo. In this manner a single crystal having a dislocation density of 1.5.times.10.sup.4 cm.sup.2 or less is prepared.

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