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1. 发明申请

US20070045232A1 WAFER POLISHING METHOD AND POLISHED WAFER 有权
标题翻译：波浪抛光方法和抛光波形
公开(公告)号：US20070045232A1
公开(公告)日：2007-03-01
申请号：US11468570
申请日：2006-08-30
申请人： Toshinari MURAI , Yukio Shibano
发明人： Toshinari MURAI , Yukio Shibano
IPC分类号： C23F1/00 , H01L21/302 , B44C1/22
CPC分类号： B24B37/28 , B24B37/30
摘要： A wafer substrate is polished by disposing the wafer substrate between an abrasive cloth on a polishing platen and a plate, and relatively rotating the polishing platen and the plate for mirror polishing the surface of the wafer substrate with the abrasive cloth. A liquid is fed onto the plate side surface of the wafer substrate so that the wafer substrate is directly held to the plate by the adsorption force of the liquid, while performing the mirror polishing.
摘要翻译：通过将晶片衬底设置在研磨台板上的研磨布与板之间，并相对旋转研磨台板和板，用研磨布对晶片基板的表面进行镜面抛光来研磨晶片基板。将液体供给到晶片基板的板侧表面，从而通过液体的吸附力将晶片基板直接固定在板上，同时进行镜面抛光。

2. 发明授权

US5501172A Method of growing silicon single crystals 失效
标题翻译：生长硅单晶的方法
公开(公告)号：US5501172A
公开(公告)日：1996-03-26
申请号：US395837
申请日：1995-02-28
申请人： Toshinari Murai , Eiichi Iino , Hideo Arai , Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Toshinari Murai , Eiichi Iino , Hideo Arai , Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/20
CPC分类号： C30B29/06 , C30B15/00
摘要： The present invention provides a method of growing silicon single crystals by the Czochralski method, wherein the strength of a neck may be increased so as to delete the risk of severance thereof in a simple and easy way without the use of mechanically complex devices and thereby growing of a single crystal of a larger diameter and heavy weight is made practically possible.The method comprises the steps of: a single crystal being so grown from a seed crystal that the diameter of said single crystal gets gradually narrower until the length of a seed taper reaches 2.5 to 15 times the sectional size of the seed crystal; the diameter of a long near-cylindrical neck following the seed taper being so regulated that said diameter may be 0.09 to 0.9 times the sectional size of the seed crystal and 2.5 mm as the smallest in diameter; the spread of the diameter fluctuation of the neck being so restricted as to be less than 1 mm; and the length of the neck being so controlled as to be kept within the range of 200 mm to 600 mm.
摘要翻译：本发明提供了通过切克劳斯基法生长硅单晶的方法，其中可以增加颈部的强度，以便在不使用机械复杂的装置的情况下以简单和容易的方式删除其分离的风险，从而增长的大直径和重量的单晶实际上是可能的。该方法包括以下步骤：从晶种生长单晶，使得单晶的直径逐渐变窄，直到晶种锥的长度达到晶种的截面尺寸的2.5至15倍; 种子锥度之后的长的近圆柱形颈部的直径被调节，使得所述直径可以是晶种的截面尺寸的0.09至0.9倍，并且直径最小为2.5mm; 颈部的直径波动的扩展被限制为小于1mm; 并且颈部的长度被控制在200mm至600mm的范围内。

3. 发明授权

US5779790A Method of manufacturing a silicon monocrystal 失效
标题翻译：硅单晶的制造方法
公开(公告)号：US5779790A
公开(公告)日：1998-07-14
申请号：US814107
申请日：1997-03-10
申请人： Toshinari Murai , Naoki Nagai
发明人： Toshinari Murai , Naoki Nagai
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902
摘要： In a method of manufacturing a silicon monocrystal using the Czochralski method, a seed crystal is brought into contact with silicon melt and is then pulled such that after a neck portion is formed, a silicon monocrystal is grown below the neck portion. The crystal has a hollow portion which has an opening in a contact surface of the seed crystal to be brought into contact with the silicon melt. Alternatively, the seed crystal has a hollow portion which will have an opening in the contact surface of the seed crystal when the contact surface is brought into contact with the silicon melt. Use of such seed crystals makes it possible to increase the strength of the neck portion and to pull a heavy and long silicon monocrystal having a large diameter.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，使晶种与硅熔体接触，然后被拉动，使得在形成颈部之后，在颈部下方生长硅单晶。晶体具有中空部分，该中空部分在籽晶的接触表面上具有与硅熔体接触的开口。或者，晶种具有中空部分，当接触表面与硅熔体接触时，其将具有在晶种的接触表面中的开口。使用这种晶种可以提高颈部的强度并拉出具有大直径的重且长的硅单晶。

4. 发明授权

US07588481B2 Wafer polishing method and polished wafer 有权
标题翻译：晶圆抛光方法和抛光晶圆
公开(公告)号：US07588481B2
公开(公告)日：2009-09-15
申请号：US11468570
申请日：2006-08-30
申请人： Toshinari Murai , Yukio Shibano
发明人： Toshinari Murai , Yukio Shibano
IPC分类号： B24B7/19 , B24B7/30 , B24B19/00
CPC分类号： B24B37/28 , B24B37/30
摘要： A wafer substrate is polished by disposing the wafer substrate between an abrasive cloth on a polishing platen and a plate, and relatively rotating the polishing platen and the plate for mirror polishing the surface of the wafer substrate with the abrasive cloth. A liquid is fed onto the plate side surface of the wafer substrate so that the wafer substrate is directly held to the plate by the adsorption force of the liquid, while performing the mirror polishing.
摘要翻译：通过将晶片衬底设置在研磨台板上的研磨布与板之间，并相对旋转研磨台板和板，用研磨布对晶片基板的表面进行镜面抛光来研磨晶片基板。将液体供给到晶片基板的板侧表面，从而通过液体的吸附力将晶片基板直接固定在板上，同时进行镜面抛光。

5. 发明授权

US6159283A Apparatus and method for measuring mechanical strength of neck portion of seed crystal and method for producing silicon single crystal 有权
标题翻译：用于测量晶种颈部机械强度的装置和方法以及用于生产硅单晶的方法
公开(公告)号：US6159283A
公开(公告)日：2000-12-12
申请号：US267214
申请日：1999-03-12
申请人： Isamu Harada , Michiaki Oda , Masaru Toyoshima , Toshinari Murai , Eiichi Iino
发明人： Isamu Harada , Michiaki Oda , Masaru Toyoshima , Toshinari Murai , Eiichi Iino
IPC分类号： G01N3/02 , G01N3/08 , C30B15/24
CPC分类号： G01N3/08 , G01N2203/0286 , Y10S117/911 , Y10T117/1068
摘要： Apparatus for measuring the mechanical strength of a neck portion of a silicon seed crystal used for growing a silicon crystal by the Czochralski method includes a seed chuck for holding the seed crystal of a test sample and an end of a wire hung from an upper hook. A crystal holder which holds the other end part of the test sample from below is tied to a lower hook with another wire to support the holder. The apparatus includes means for pulling the hook at a given rate, and measuring means for continuously measuring tensile load. Such apparatus and the method thereby provide accurate measurement of mechanical strength of the neck portion of the silicon seed crystal with good precision and reproducibility. A single crystal ingot is grown under conditions affording good balance of productivity and safety.
摘要翻译：用于测量用于通过切克劳斯基法生长硅晶体的硅晶种的颈部的机械强度的装置包括用于保持测试样品的晶种和从上钩挂起的线的末端的种子卡盘。从下方将测试样品的另一端部分保持的结晶保持器用另一根线连接到下钩以支撑保持器。该装置包括用于以给定速率拉动钩的装置，以及用于连续测量拉伸载荷的测量装置。这样的装置和方法能够以良好的精度和再现性精确地测量硅晶种的颈部的机械强度。在提供良好的生产率和安全性平衡的条件下生长单晶锭。

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