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    • 3. 发明授权
    • Process for electrolessly plating copper and plating solution therefor
    • 无电镀铜及其电镀液的方法
    • US4935267A
    • 1990-06-19
    • US190854
    • 1988-05-06
    • Koji KondoKatuhiko MurakawaNobumasa IshidaJunji IshikawaKaoru NomotoFutoshi Ishikawa
    • Koji KondoKatuhiko MurakawaNobumasa IshidaJunji IshikawaKaoru NomotoFutoshi Ishikawa
    • C23C18/40H05K3/18
    • H05K3/181C23C18/40
    • By forming a first copper layer on a substrate by using a complexing agent for copper ion, which has a low copper complex stability constant, a uniform second layer can be stably formed by a second complexing agent for a copper ion, which has a high copper complex stability constant, even if the substrate is composed of a material having a low catalytic activity, such as tungsten, or even if the catalytic activity of the substrate is uneven. A similar effect can also be obtained by adding a small amount of a complexing agent for a copper ion, having a low stability constant, to an electroless copper plating bath containing a complexing agent for a copper ion, having a low stability constant. In this case, an effect of preventing stopping of the reaction of the complexing agent of a copper ion, having a high stability constant, is attained. Most preferably, after formation of a uniform first copper layer by an electroless copper plating solution containing a complexing agent for a copper ion, having a low stability constant, a second copper layer is formed by an electroless copper plating solution containing a complexing agent for a copper ion, having a high stability constant and also in this case, a small amount of a complexing agent for a copper ion, having a low stability constant, is added.
    • 通过使用铜络合物的稳定常数低的铜离子络合剂,在基板上形成第一铜层,可以通过第二铜离子络合剂稳定地形成均匀的第二层,铜离子配位剂 复合稳定性常数即使基材由具有低催化活性的材料如钨构成,或即使基材的催化活性不均匀也是如此。 通过向具有低稳定性常数的含有铜离子络合剂的化学镀铜浴中加入少量用于具有低稳定性常数的铜离子络合剂也可以获得类似的效果。 在这种情况下,可以获得阻止具有高稳定性常数的铜离子络合剂的反应停止的效果。 最优选的是,通过含有铜离子络合剂的化学镀铜溶液形成均匀的第一铜层,具有低稳定性常数,第二铜层由含有络合剂的化学镀铜溶液形成, 铜离子,具有高稳定性常数,并且在这种情况下,加入少量的具有低稳定常数的铜离子络合剂。
    • 9. 发明授权
    • Method of manufacturing three-dimensional printed wiring board
    • 制造三维印刷电路板的方法
    • US06499217B1
    • 2002-12-31
    • US09700992
    • 2001-02-06
    • Shingetsu YamadaJun TakagiKoichiro TaniguchiKaoru NomotoToshihiro MiyakeKazuya SanadaMakoto Totani
    • Shingetsu YamadaJun TakagiKoichiro TaniguchiKaoru NomotoToshihiro MiyakeKazuya SanadaMakoto Totani
    • H01K322
    • H01K3/22H05K1/0313H05K1/0353H05K3/0014H05K2201/0129H05K2201/0355H05K2201/09036H05K2203/0108H05K2203/1105H05K2203/302Y10T29/49155Y10T29/49156Y10T29/49158
    • An efficient method of manufacturing a three-dimensional printed wiring board is provided in which a conductor foil can be reliably heat-fused to the board at a relatively low temperature and the three-dimensional shape such as convex and concave of a mold can be reproduced precisely with no residual stress. The method comprises the steps of providing a filmy insulator comprising a thermoplastic resin composition containing 65-35 wt % of a polyaryl ketone resin having a crystal-melting peak temperature of 260° C. or over, and 35-65 wt % of an amorphous polyetherimide resin, and having a glass transition temperature as measured when the temperature is increased for differential scanning calorie measurement of 150-230° C. superposing a conductor foil on one or both sides of the filmy insulating member, heat-fusing the conductor foil so that the thermoplastic resin composition will satisfy the relation between the crystal-melting calorie &Dgr; Hm and the crystallizing calorie &Dgr; Hc as expressed by the following formula (I), etching the conductor foil to form a conductor circuit, and deforming the printed wiring circuit obtained three-dimensionally. [(&Dgr;Hm−&Dgr;Hc)/&Dgr;Hm]≦0.5  (I): [(&Dgr;Hm−&Dgr;Hc)/&Dgr;Hm]≧0.7  (II):
    • 提供一种制造三维印刷电路板的有效方法,其中导体箔可以在相对低的温度下可靠地热熔到板上,并且可以再现模具的凸和凹的三维形状 精确地没有残余应力。该方法包括提供一种薄膜绝缘体的步骤,该薄膜绝缘体包含含有65-35重量%的结晶熔融峰值温度为260℃或更高的聚芳基酮树脂的热塑性树脂组合物, 65重量%的无定形聚醚酰亚胺树脂,并且当在膜绝缘构件的一面或两面上叠加导体箔的150-230℃的差示扫描热量测量的温度升高时测量的玻璃化转变温度,热量 使导体箔使热塑性树脂组合物满足结晶熔融热量DELTA Hm与结晶热量DELTA Hc之间的关系,如 由下式(I)表示,蚀刻导体箔以形成导体电路,并且使得三维获得的印刷线路电路变形。