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1. 发明授权

US07670941B2 Method for production of semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07670941B2
公开(公告)日：2010-03-02
申请号：US11465502
申请日：2006-08-18
申请人： Koji Kawanami , Kiyotaka Tabuchi
发明人： Koji Kawanami , Kiyotaka Tabuchi
IPC分类号： H01L21/00
CPC分类号： H01L21/76877 , H01L21/02074 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A method for production of semiconductor devices which includes the steps of forming, on an interlayer insulating film formed on a substrate, a copper-containing conductive layer in such a way that its surface is exposed, performing heat treatment with a reducing gas composed mainly of hydrogen on the surface of the conductive layer, performing plasma treatment with a reducing gas on the surface of the conductive layer, thereby permitting the surface of the conductive layer to be reduced and the hydrogen adsorbed by the heat treatment to be released, and forming an oxidation resistance film that covers the surface of the conductive layer such that the surface of the conductive layer is not exposed to an oxygen-containing atmospheric gas after the plasma treatment.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在基板上形成的层间绝缘膜上形成含铜导电层，使其表面露出，用主要由在导电层的表面上形成氢气，在导电层的表面进行还原性气体的等离子体处理，由此可以使导电层的表面降低，通过热处理吸附的氢被释放，形成覆盖导电层的表面的氧化电阻膜，使得导电层的表面在等离子体处理后不暴露于含氧气氛气体。

2. 发明申请

US20070048995A1 METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICES 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20070048995A1
公开(公告)日：2007-03-01
申请号：US11465502
申请日：2006-08-18
申请人： Koji Kawanami , Kiyotaka Tabuchi
发明人： Koji Kawanami , Kiyotaka Tabuchi
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/02074 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A method for production of semiconductor devices which includes the steps of forming, on an interlayer insulating film formed on a substrate, a copper-containing conductive layer in such a way that its surface is exposed, performing heat treatment with a reducing gas composed mainly of hydrogen on the surface of the conductive layer, performing plasma treatment with a reducing gas on the surface of the conductive layer, thereby permitting the surface of the conductive layer to be reduced and the hydrogen adsorbed by the heat treatment to be released, and forming an oxidation resistance film that covers the surface of the conductive layer such that the surface of the conductive layer is not exposed to an oxygen-containing atmospheric gas after the plasma treatment.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在基板上形成的层间绝缘膜上形成含铜导电层，使其表面露出，用主要由在导电层的表面上形成氢气，在导电层的表面进行还原性气体的等离子体处理，由此可以使导电层的表面降低，通过热处理吸附的氢被释放，形成覆盖导电层的表面的氧化电阻膜，使得导电层的表面在等离子体处理后不暴露于含氧气氛气体。

3. 发明申请

US20060024979A1 Fabrication method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060024979A1
公开(公告)日：2006-02-02
申请号：US11169604
申请日：2005-06-29
申请人： Kiyotaka Tabuchi
发明人： Kiyotaka Tabuchi
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/515 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02362 , H01L21/31612 , H01L21/31633
摘要： A fabrication method of a semiconductor device is disclosed by which damage to another film or exfoliation of a film is prevented and an insulating film having a dielectric constant of 2.5 or less can be formed while a film strength is maintained without deteriorating a wiring line characteristic. According to an embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas having a ring structure of Si—O bonds, such that it maintains the ring structure of the Si—O bonds. According to another embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas which contains silane-containing gas and oxygen gas or film-forming gas which contains Si—O bond-containing gas, such that it has a ring structure of the Si—O bonds.
摘要翻译：公开了半导体器件的制造方法，其中可以防止对另一个膜的损伤或膜的剥离，并且可以在保持膜强度而不劣化布线特性的同时形成介电常数为2.5以下的绝缘膜。根据一个实施方案，通过等离子体工艺在衬底上形成绝缘膜，其使用具有Si-O键环结构的成膜气体，以保持Si-O键的环结构。根据另一个实施例，通过等离子体工艺在基板上形成绝缘膜，该等离子体处理使用含有含硅烷的气体和氧气的成膜气体或含有含Si-O键的气体的成膜气体，使得它具有Si-O键的环结构。

4. 发明授权

US09472472B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09472472B2
公开(公告)日：2016-10-18
申请号：US13410389
申请日：2012-03-02
申请人： Hiroyasu Matsugai , Kiyotaka Tabuchi
发明人： Hiroyasu Matsugai , Kiyotaka Tabuchi
IPC分类号： H01L21/30 , H01L21/66 , H01L27/146 , H01L21/768 , H01L23/00 , H01L25/065 , H01L25/00 , H01L27/06
CPC分类号： H01L27/14634 , H01L21/76898 , H01L22/12 , H01L22/20 , H01L23/562 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L27/14636 , H01L27/1469 , H01L2224/08145 , H01L2224/16 , H01L2224/24147 , H01L2224/80896 , H01L2224/8203 , H01L2224/92 , H01L2225/06541 , H01L2924/13091 , H01L2924/00 , H01L2224/80001 , H01L2224/82
摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor substrate and a first main surface side of the second semiconductor substrate being bonded to each other; and a warpage correction layer which is formed on at least one or more selected from the first main surface side of the first semiconductor substrate, the first main surface side of the second semiconductor substrate, a second main surface side of the first semiconductor substrate, and a second main surface side of the second semiconductor substrate.
摘要翻译：半导体器件包括第一半导体衬底，第二半导体衬底，第一半导体衬底的第一主表面侧和第二半导体衬底的第一主表面侧彼此结合; 以及翘曲修正层，其形成在从所述第一半导体基板的所述第一主面侧，所述第二半导体基板的所述第一主面侧，所述第一半导体基板的第二主面侧以及第二半导体衬底的第二主表面侧。

5. 发明授权

US06798625B1 Spin-valve magnetoresistance sensor and thin-film magnetic head 失效
标题翻译：旋转阀磁阻传感器和薄膜磁头
公开(公告)号：US06798625B1
公开(公告)日：2004-09-28
申请号：US09670309
申请日：2000-09-26
申请人： Masaki Ueno , Kiyotaka Tabuchi , Tatsuo Sawasaki , Hiroshi Nishida , Kazuhiro Mizukami , Fuminori Hikami
发明人： Masaki Ueno , Kiyotaka Tabuchi , Tatsuo Sawasaki , Hiroshi Nishida , Kazuhiro Mizukami , Fuminori Hikami
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： The present invention provides a spin-valve magnetoresistance sensor in which are formed, on top of the substrate, free layers, and pinned layers, enclosing a nonmagnetic spacer layer, and an antiferromagnetic layer adjacent to the pinned layers. The sensor is also equipped with a back layer including at least two nonmagnetic metal layers adjacent to the free layers on the side of the free layers opposite the nonmagnetic spacer layer. The back layer has at least one nonmagnetic metal layer of Cu with high electrical conductivity, preferably formed adjacent to the free layers, as for example in a two-layer structure of Cu and Ru or a three-layer structure Ru/Cu/Ru. In addition to a high read output, fluctuations in Hint with the film thickness of the back layer can be suppressed and sensor characteristics stabilized, and high recording densities can be realized.
摘要翻译：本发明提供了一种自旋阀磁阻传感器，其中在衬底的顶部上形成包围非磁性间隔层的自由层和钉扎层，以及邻近被钉扎层的反铁磁层。传感器还配备有背层，该背层包括与自由层相对的非磁性间隔层相对的自由层相邻的至少两个非磁性金属层。背层具有至少一个具有高导电性的Cu的非磁性金属层，优选邻近自由层形成，例如以Cu和Ru的两层结构或三层结构Ru / Cu / Ru形成。除了高读取输出之外，可以抑制提示背层的膜厚度的波动并且传感器特性稳定，并且可以实现高记录密度。

6. 发明授权

US06794693B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06794693B2
公开(公告)日：2004-09-21
申请号：US10408581
申请日：2003-04-08
申请人： Katsumi Kakamu , Atsushi Suzuki , Kiyotaka Tabuchi
发明人： Katsumi Kakamu , Atsushi Suzuki , Kiyotaka Tabuchi
IPC分类号： H01L2348
CPC分类号： H01L21/02167 , H01L21/02129 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/28123 , H01L21/312 , H01L21/3127 , H01L21/3148 , H01L21/76828 , H01L21/76829 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L29/78 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A threshold voltage change and degradation of the drain saturation current over a period of time of a MOS transistor are prevented by providing a permeable insulating film that serves as an inter-layer etching stopper layer on the surface of a plug, and an inter-layer insulating film that can be made from a low dielectric constant organic insulating film.
摘要翻译：在MOS晶体管的一段时间内的阈值电压变化和漏极饱和电流的劣化通过在插头表面上提供用作层间蚀刻停止层的可渗透绝缘膜来防止，可以由低介电常数有机绝缘膜制成的绝缘膜。

7. 发明授权

US08767108B2 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus 有权
标题翻译：固态成像装置，制造固态成像装置的方法和电子装置
公开(公告)号：US08767108B2
公开(公告)日：2014-07-01
申请号：US13548900
申请日：2012-07-13
申请人： Tomoharu Ogita , Atsushi Yamamoto , Keiji Tatani , Yoichi Ootsuka , Kiyotaka Tabuchi
发明人： Tomoharu Ogita , Atsushi Yamamoto , Keiji Tatani , Yoichi Ootsuka , Kiyotaka Tabuchi
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14868 , H04N5/378 , H04N9/045
摘要： A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.
摘要翻译：固态成像装置包括各自具有用于将入射光转换为电信号的光电转换元件的像素，与像素相关联的滤色器和具有多个滤色器组件的微透镜，将入射光通过滤色器会聚到光电转换元件，设置在滤色器的滤色器组件之间的遮光膜和设置在滤色器和遮光膜之间的非平面化粘合剂膜。

8. 发明授权

US08486748B2 Method for manufacturing solid-state imaging device 有权
标题翻译：固态成像装置的制造方法
公开(公告)号：US08486748B2
公开(公告)日：2013-07-16
申请号：US13027638
申请日：2011-02-15
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L21/00 , H01L27/00
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译：具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。在光接收部的受光面侧形成有空穴积聚层。形成有外围电路的外围电路部分设置在光接收部分的一侧。绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离接收部分电影有负固定费用。

9. 发明申请

US20120248580A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120248580A1
公开(公告)日：2012-10-04
申请号：US13410389
申请日：2012-03-02
申请人： Hiroyasu Matsugai , Kiyotaka Tabuchi
发明人： Hiroyasu Matsugai , Kiyotaka Tabuchi
IPC分类号： H01L23/522 , H01L21/66
CPC分类号： H01L27/14634 , H01L21/76898 , H01L22/12 , H01L22/20 , H01L23/562 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L27/14636 , H01L27/1469 , H01L2224/08145 , H01L2224/16 , H01L2224/24147 , H01L2224/80896 , H01L2224/8203 , H01L2224/92 , H01L2225/06541 , H01L2924/13091 , H01L2924/00 , H01L2224/80001 , H01L2224/82
摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor substrate and a first main surface side of the second semiconductor substrate being bonded to each other; and a warpage correction layer which is formed on at least one or more selected from the first main surface side of the first semiconductor substrate, the first main surface side of the second semiconductor substrate, a second main surface side of the first semiconductor substrate, and a second main surface side of the second semiconductor substrate.
摘要翻译：半导体器件包括第一半导体衬底，第二半导体衬底，第一半导体衬底的第一主表面侧和第二半导体衬底的第一主表面侧彼此结合; 以及翘曲修正层，其形成在从所述第一半导体基板的所述第一主面侧，所述第二半导体基板的所述第一主面侧，所述第一半导体基板的第二主面侧以及第二半导体衬底的第二主表面侧。

10. 发明授权

US08097928B2 Solid-state imaging device, and imaging apparatus 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US08097928B2
公开(公告)日：2012-01-17
申请号：US12339941
申请日：2008-12-19
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L27/14
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译：具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。在光接收部的受光面侧形成有空穴积聚层。形成有外围电路的外围电路部分设置在光接收部分的一侧。绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离接收部分电影有负固定费用。

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