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1. 发明授权

US5595627A Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US5595627A
公开(公告)日：1997-01-21
申请号：US597563
申请日：1996-02-02
申请人： Koichiro Inazawa , Shin Okamoto , Hisataka Hayashi , Takaya Matsushita
发明人： Koichiro Inazawa , Shin Okamoto , Hisataka Hayashi , Takaya Matsushita
IPC分类号： H05H1/46 , C23F4/00 , C30B33/12 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/00 , C09K13/00
CPC分类号： H01L21/31116
摘要： A plasma etching apparatus has a lower electrode for supporting a semiconductor wafer in a processing room, an upper electrode opposite to the lower electrode, and an RF power supply for applying an RF power across the upper and lower electrodes. An SiN layer as an underlayer having a shoulder portion, and an SiO.sub.2 layer covering the SiN layer are disposed on the wafer. A contact hole is formed in the SiO.sub.2 layer by etching so as to expose the shoulder portion of the SiN layer. A processing gas contains C.sub.4 F.sub.8 and CO. To set the etching selection ratio of SiO.sub.2 /SiN, the discharge duration of each part of the processing gas is used as a parameter. The progress of dissociation of C.sub.4 F.sub.8 is controlled by selecting the discharge duration. The discharge duration is determined by the residence time of each part of the processing gas and the application time of an RF power.
摘要翻译：等离子体蚀刻装置具有用于在处理室中支撑半导体晶片的下电极，与下电极相对的上电极，以及用于在上电极和下电极上施加RF电力的RF电源。作为具有肩部的底层的SiN层和覆盖SiN层的SiO 2层设置在晶片上。通过蚀刻在SiO 2层中形成接触孔，以露出SiN层的肩部。处理气体含有C4F8和CO。为了设定SiO 2 / SiN的蚀刻选择比，使用处理气体的各部分的排出持续时间作为参数。通过选择放电持续时间控制C4F8的离解进程。放电持续时间由处理气体的每个部分的停留时间和RF功率的施加时间决定。

2. 发明授权

US07326650B2 Method of etching dual damascene structure 有权
标题翻译：蚀刻双镶嵌结构的方法
公开(公告)号：US07326650B2
公开(公告)日：2008-02-05
申请号：US10399626
申请日：2001-10-01
申请人： Yoshihide Kihara , Shin Okamoto , Koichiro Inazawa , Tomoki Suemasa
发明人： Yoshihide Kihara , Shin Okamoto , Koichiro Inazawa , Tomoki Suemasa
IPC分类号： H01L21/302
CPC分类号： H01L21/76835 , H01L21/76811 , H01L21/76813
摘要： In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard mask in order to prevent shoulder sag. By adopting this method, a dual damascene structure in which the extent of the shoulder sag at the hard mask is minimized can be achieved through etching.
摘要翻译：在通过使用至少一层低k膜和至少一层硬掩模层来实现双镶嵌结构的蚀刻方法中，最终不留在双镶嵌结构中的虚拟膜形成在至少一层在硬掩模上，以防止肩下垂。通过采用这种方法，可以通过蚀刻来实现在硬掩模处的肩部凹陷的程度最小化的双镶嵌结构。

3. 发明授权

US5705081A Etching method 失效
标题翻译：蚀刻方法
公开(公告)号：US5705081A
公开(公告)日：1998-01-06
申请号：US531713
申请日：1995-09-21
申请人： Koichiro Inazawa , Shin Okamoto , Yoshifumi Tahara
发明人： Koichiro Inazawa , Shin Okamoto , Yoshifumi Tahara
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/31116 , H01L21/3065
摘要： An etching apparatus comprises a pair of electrodes provided to face each other in a processing vessel, a permanent magnet for forming a magnetic field substantially parallel to a surface of a to-be-processed object which is placed between the paired electrodes, a gas introduction section for introducing etching gas into the processing vessel, a high-frequency generator for applying high-frequency voltage to the paired electrodes for generating plasma, and a high-frequency control section for preventing plasma from being unevenly distributed by starting and stopping the application of high-frequency voltage by the high-frequency generator at fixed intervals.
摘要翻译：蚀刻装置包括在处理容器内设置成彼此相对的一对电极，用于形成基本上平行于被配置在一对电极之间的待处理物体的表面的磁场的永磁体，气体导入将用于将蚀刻气体引入处理容器的部分，将高频电压施加到用于产生等离子体的成对电极的高频发生器，以及用于通过启动和停止应用来防止等离子体不均匀分布的高频控制部分高频电压由高频发生器固定间隔。

4. 发明授权

US07119011B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07119011B2
公开(公告)日：2006-10-10
申请号：US10845581
申请日：2004-05-14
申请人： Akitoshi Harada , Shin Okamoto , Koichiro Inazawa
发明人： Akitoshi Harada , Shin Okamoto , Koichiro Inazawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1026
摘要： This semiconductor device includes a substrate 60 to be processed, a first insulation film 64 arranged at a designated position on the substrate 60 to have a via-hole 71a, an organic film 65 formed on the first insulation film 64 and a second insulation film 66 formed on the organic film 65. Both of the organic film 65 and the second insulation film 66 have a trench 71b in communication with the via-hole 71a, in common. Additionally, a manufacturing method of this semiconductor device includes the processes of forming the organic film 65 on the substrate 60 to be processed, forming a film having a designated pattern on the organic film 65 while exposing a part of the organic film 65, and removing the exposed part of the organic film 65 from the substrate 60 to expose a foundation layer of the organic film 65.
摘要翻译：该半导体装置包括：被处理基板60，布置在基板60上的指定位置的具有通孔71a的第一绝缘膜64，形成在第一绝缘膜64上的有机膜65和第二绝缘膜 66形成在有机膜65上。有机膜65和第二绝缘膜66共同地具有与通孔71a连通的沟槽71b。此外，该半导体装置的制造方法包括在待加工的基板60上形成有机膜65的工序，在有机膜65的一部分露出的同时在有机膜65上形成具有指定图案的膜，从基板60露出部分有机膜65，露出有机膜65的基层。

5. 发明授权

US08287750B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08287750B2
公开(公告)日：2012-10-16
申请号：US12686899
申请日：2010-01-13
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译：一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

6. 发明授权

US06589435B1 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US06589435B1
公开(公告)日：2003-07-08
申请号：US09674482
申请日：2000-11-08
申请人： Shin Okamoto , Shunichi Iimuro
发明人： Shin Okamoto , Shunichi Iimuro
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： Contact holes (36a, 36b) are formed by means of plasma etching, such that the contact holes are formed from the top surface of a silicon oxide insulating film (31) down to a wiring layer (33a) at a deep position and a wiring layer (33b) at a shallow position, respectively, which are embedded in the insulating film (31). A process gas containing C4F8, CO, and Ar is used, while the process pressure is set to be from 30 to 60 mTorr, and the partial pressure of the C4F8 gas is set to be from 0.07 to 0.35 mTorr. Under these conditions, the process gas is turned into plasma, and the insulating film (31) is etched with the plasma to form the contact holes (36a, 36b).
摘要翻译：通过等离子体蚀刻形成接触孔（36a，36b），使得接触孔从氧化硅绝缘膜（31）的顶表面形成为深度到布线层（33a）和布线层（33b）分别嵌入在绝缘膜（31）中的浅位置处。使用含有C4F8，CO和Ar的工艺气体，同时将工艺压力设定为30〜60mTorr，将C4F8气体的分压设定为0.07〜0.35mTorr。在这些条件下，处理气体变成等离子体，用等离子体蚀刻绝缘膜（31），形成接触孔（36a，36b）。

7. 发明授权

US07541283B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07541283B2
公开(公告)日：2009-06-02
申请号：US11066260
申请日：2005-02-28
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/44
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译：一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

8. 发明授权

US07300881B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US07300881B2
公开(公告)日：2007-11-27
申请号：US10935103
申请日：2004-09-08
申请人： Kazuya Kato , Katsuhiko Ono , Hideki Mizuno , Masahiro Ogasawara , Akinori Kitamura , Noriyuki Kobayashi , Yasushi Inata , Shin Okamoto
发明人： Kazuya Kato , Katsuhiko Ono , Hideki Mizuno , Masahiro Ogasawara , Akinori Kitamura , Noriyuki Kobayashi , Yasushi Inata , Shin Okamoto
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138
摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.
摘要翻译：在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。非反应性气体还包括氩气。

9. 发明授权

US08641916B2 Plasma etching apparatus, plasma etching method and storage medium 有权
标题翻译：等离子体蚀刻装置，等离子体蚀刻方法和存储介质
公开(公告)号：US08641916B2
公开(公告)日：2014-02-04
申请号：US12692913
申请日：2010-01-25
申请人： Koichi Yatsuda , Yoshinobu Ooya , Shin Okamoto , Hiromasa Mochiki
发明人： Koichi Yatsuda , Yoshinobu Ooya , Shin Okamoto , Hiromasa Mochiki
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/32697
摘要： A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.
摘要翻译：提供了一种通过等离子体处理装置在蚀刻靶膜中形成孔的等离子体蚀刻方法。该装置包括用于向上电极和下电极中的至少一个施加用于等离子体产生的RF功率的RF电源，以及用于向上电极施加负DC电压的DC电源。通过接通RF电源产生等离子体的第一条件和负DC电压被施加到上电极，并且通过关闭RF电源而将等离子体熄灭的第二条件并且将负DC电压施加到上电极交替重复。在第一条件下，通过正离子在等离子体中进行蚀刻，并且通过DC电压将负离子供给到孔中，以在第二条件下中和孔中的正离子。

10. 发明申请

US20100112819A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20100112819A1
公开(公告)日：2010-05-06
申请号：US12686899
申请日：2010-01-13
申请人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译：一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

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