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1. 发明授权

US08512510B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08512510B2
公开(公告)日：2013-08-20
申请号：US13108612
申请日：2011-05-16
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
摘要翻译：等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。通过该等离子体对衬底进行预定的等离子体处理。等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态。

2. 发明申请

US20110250761A1 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置和计算机可读存储介质
公开(公告)号：US20110250761A1
公开(公告)日：2011-10-13
申请号：US13045988
申请日：2011-03-11
申请人： Sungtae LEE , Masahiro Ogasawara , Junichi Sasaki , Naohito Yanagida
发明人： Sungtae LEE , Masahiro Ogasawara , Junichi Sasaki , Naohito Yanagida
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01J37/32091
摘要： A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.
摘要翻译：提供了一种等离子体蚀刻方法，用于通过在非晶碳膜的图案作为最终掩模的非晶碳膜上形成的氧化硅膜或氮化硅膜上进行等离子体蚀刻，所述多层掩模包括具有预定图案，在光致抗蚀剂层下形成的有机底部防反射涂层（BARC）膜，在BARC膜下面形成的SiON膜和形成在SiON膜下面的无定形碳膜。在氧化硅膜或氮化硅膜的等离子体蚀刻开始时使用的初始掩模是在无定形碳膜上残留SiON膜的状态和无定形碳膜的膜厚比残留SiON膜的膜厚小于或等于约14。

3. 发明申请

US20100163525A1 SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM 有权
标题翻译：基板加工方法和储存介质
公开(公告)号：US20100163525A1
公开(公告)日：2010-07-01
申请号：US12646142
申请日：2009-12-23
申请人： Sungtae LEE , Masahiro Ogasawara , Masahiro Ito
发明人： Sungtae LEE , Masahiro Ogasawara , Masahiro Ito
IPC分类号： B44C1/22
CPC分类号： H01L21/31138 , H01L21/31116 , H01L21/31122 , H01L21/31144
摘要： Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8, and the mask layer is etched by using a COS-containing gas as a processing gas.
摘要翻译：公开了一种基板处理方法，该方法包括目标层，掩模层和中间层，其被层叠在目标层上，通过中间层和掩模层在目标层上形成图案。通过使用CF4，CHF3和C4F8的混合气体作为处理气体，在100mTorr（1.33×10Pa）至150mTorr（2.0×10Pa）的加工压力下对中间层进行蚀刻，并且掩模层被蚀刻通过使用含COS气体作为处理气体。

4. 发明申请

US20100003825A1 PLASMA ETCHING METHOD, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法，控制程序和计算机存储介质
公开(公告)号：US20100003825A1
公开(公告)日：2010-01-07
申请号：US12497106
申请日：2009-07-02
申请人： Masahiro OGASAWARA , Sungtae Lee
发明人： Masahiro OGASAWARA , Sungtae Lee
IPC分类号： H01L21/467
CPC分类号： H01L21/31144 , H01J37/32091 , H01J37/32935 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.
摘要翻译：一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

5. 发明授权

US07494561B2 Plasma processing apparatus and method, and electrode plate for plasma processing apparatus 有权
标题翻译：等离子体处理装置和方法以及等离子体处理装置的电极板
公开(公告)号：US07494561B2
公开(公告)日：2009-02-24
申请号：US11137492
申请日：2005-05-26
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： H01J37/32449 , H01J37/32027 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01J37/3255 , H01J37/32587
摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.
摘要翻译：一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。第一上电极被设置成具有环形并且面对放置在处理容器内的目标衬底。第二上电极径向设置在第一上电极内并与其电绝缘。第一馈电器被配置为以第一功率值将第一RF电源的第一RF输出提供给第一上电极。第二馈电器从第一馈电器分支并且被配置为以小于第一功率值的第二功率值将第一RF电源的第一RF输出提供给第二上电极。

6. 发明申请

US20080156441A1 PLASMA PROCESSING APPARATUS AND ELECTRODE PLATE, ELECTRODE SUPPORTING BODY, AND SHIELD RING THEREOF 审中-公开
标题翻译：等离子体处理装置和电极板，电极支撑体及其护环
公开(公告)号：US20080156441A1
公开(公告)日：2008-07-03
申请号：US12040523
申请日：2008-02-29
申请人： Masahiro Ogasawara , Kazuya Kato , Toshifumi Nagaiwa , Kosuke Imafuku , Koichi Kazama
发明人： Masahiro Ogasawara , Kazuya Kato , Toshifumi Nagaiwa , Kosuke Imafuku , Koichi Kazama
IPC分类号： H01L21/306
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532 , H01J37/32623 , H01L21/3065
摘要： In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.
摘要翻译：在用于对待处理的基板W进行等离子体处理的等离子体装置1中，与作为下部电极的基座5相对的上部电极21具有电极支撑体22和电极板23。在两个边界处的电极支撑体侧的中心处，确定空腔62的尺寸，使得在提供的高频电力的频率和正交于设置电极板23。此外，围绕电极板23的屏蔽环具有下表面与电极板23处于相同水平面的形状，并且其由不容易被等离子体侵蚀的材料制成。由此，通过等离子体的均匀分布和由于随时间的变化而降低的劣化，处理小特征成为可能。

7. 发明申请

US20050257743A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20050257743A1
公开(公告)日：2005-11-24
申请号：US11137516
申请日：2005-05-26
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： H05H1/46 , C23C16/00 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/306 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32577 , H01J37/32082 , H01J37/32174 , H01L21/31116
摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.
摘要翻译：一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。上电极被设置为面对放置在处理容器内的目标衬底。电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

8. 发明授权

US06878234B2 Plasma processing device and exhaust ring 有权
标题翻译：等离子处理装置和排气环
公开(公告)号：US06878234B2
公开(公告)日：2005-04-12
申请号：US10416235
申请日：2001-11-02
申请人： Masahiro Ogasawara , Kazuya Kato
发明人： Masahiro Ogasawara , Kazuya Kato
IPC分类号： H05H1/46 , B01J19/08 , C23C16/00 , C23C16/509 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , C23F1/00 , C23C16/455 , H01L21/306
CPC分类号： H01J37/32834 , H01J37/3244 , H01L21/67069
摘要： A plasma processing apparatus having an evacuation ring with high plasma resistance and capable of minimizing abnormal discharge is provided. A processing chamber 100 includes a ceiling unit 110 at which an upper electrode 112 is provided and a container unit 120 having a lower electrode 122 provided to face opposite the upper electrode 112, on which a substrate can be placed. An evacuation ring 126 is provided around the lower electrode 122 so as to divide the space in the processing chamber 100 into a plasma processing space 102 and an evacuation space 104. At the evacuation ring 126, through holes 126a and blind holes 126b which are fewer than the through holes 126a and open toward the plasma processing space 102 are formed. An insulation coating constituted of Y2O3 is applied onto the surface of the evacuation ring 126 towards the plasma processing space 102.
摘要翻译：提供了一种具有高等离子体电阻并能够使异常放电最小化的排气环的等离子体处理装置。处理室100包括设置有上电极112的天花板单元110和具有设置成与上电极112相对设置的下电极122的容器单元120，可以放置基板。在下部电极122周围设置有排气环126，以将处理室100中的空间分成等离子体处理空间102和排气空间104.在排气环126处，通气孔126a和盲孔126b较少形成贯通孔126a并朝向等离子体处理空间102开口。将由Y 2 O 3构成的绝缘涂层施加到排气环126的表面上朝向等离子体处理空间102。

9. 发明授权

US5997962A Plasma process utilizing an electrostatic chuck 失效
标题翻译：使用静电卡盘的等离子体工艺
公开(公告)号：US5997962A
公开(公告)日：1999-12-07
申请号：US671598
申请日：1996-06-28
申请人： Masahiro Ogasawara , Ryo Nonaka , Yoshiyuki Kobayashi
发明人： Masahiro Ogasawara , Ryo Nonaka , Yoshiyuki Kobayashi
IPC分类号： B05D3/06 , H01L21/306 , H05H1/00
CPC分类号： B05D3/06 , H01L21/306 , H05H1/00
摘要： A wafer is subjected to a plasma process, using plasma generated while a process gas is fed into a process room, and a plus DC voltage is applied to an electrostatic chuck in order to attract and hold the wafer on the electrostatic chuck by an electrostatic force. A minus DC voltage is applied to the electrostatic chuck while nitrogen gas is fed into the process room in order to cause DC discharge after the processed wafer is separated from the electrostatic chuck and before a next wafer is attracted and held on the electrostatic chuck. By doing so, plus electric charge in the gas is attracted to the electrostatic chuck, so that the surface of the electrostatic chuck is charged with plus electric charge, thereby preventing its attracting function from being deteriorated.
摘要翻译：对晶片进行等离子体处理，使用等离子体处理气体进入处理室时产生的等离子体处理，并且向静电卡盘施加正电压以便通过静电力吸引并保持晶片在静电卡盘上。。在将处理后的晶片与静电卡盘分离并且在下一个晶片被吸引并保持在静电卡盘之前，将氮气供给到处理室中以便产生DC放电，将负DC电压施加到静电卡盘。通过这样做，加上气体中的电荷被吸引到静电卡盘，使得静电卡盘的表面被加上电荷，从而防止其吸附功能劣化。

10. 发明授权

US5919332A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5919332A
公开(公告)日：1999-07-06
申请号：US659387
申请日：1996-06-06
申请人： Akira Koshiishi , Masahiro Ogasawara , Keizo Hirose , Kazuya Nagaseki , Riki Tomoyoshi , Makoto Aoki
发明人： Akira Koshiishi , Masahiro Ogasawara , Keizo Hirose , Kazuya Nagaseki , Riki Tomoyoshi , Makoto Aoki
IPC分类号： C23C16/509 , H01J37/32 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/5096 , H01J37/32633 , H01J2237/022 , Y10S156/915
摘要： A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.
摘要翻译：下部绝缘构件13布置在作为下电极的可移动器6周围，并且上绝缘构件31布置在上电极21周围。上绝缘构件的外端部31a位于下绝缘构件13的外侧，低于晶片W的上表面。下绝缘构件13与上绝缘构件31之间的最窄距离被布置成小于电极之间的间隙G. 在电极之间产生的等离子体的扩散被限制并防止扩散到侧面，使得处理容器3的内壁不被溅射。

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