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1. 发明授权

US08394231B2 Plasma process device and plasma process method 有权
标题翻译：等离子体工艺装置和等离子体处理方法
公开(公告)号：US08394231B2
公开(公告)日：2013-03-12
申请号：US11656379
申请日：2007-01-23
申请人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
发明人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H05H1/24 , H01J7/24
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541
摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
摘要翻译：与基座10相对的电极板20的表面具有突出形状。电极板20在突起20a处嵌合在屏蔽环26的开口26a中。此时，突起20a的厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。突起20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

2. 发明申请

US20070131171A1 Plasma process device and plasma process method 有权
标题翻译：等离子体工艺装置和等离子体处理方法
公开(公告)号：US20070131171A1
公开(公告)日：2007-06-14
申请号：US11656379
申请日：2007-01-23
申请人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
发明人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541
摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
摘要翻译：与基座10相对的电极板20的表面具有突起形状。电极板20在突出部20a安装在屏蔽环26的开口26a中。此时，突出部20a的芯片厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。突起部20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

3. 发明授权

US07662728B2 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US07662728B2
公开(公告)日：2010-02-16
申请号：US11431720
申请日：2006-05-11
申请人： Yusaku Kashiwagi , Yasuhiro Oshima , Yoshihisa Kagawa , Gishi Chung
发明人： Yusaku Kashiwagi , Yasuhiro Oshima , Yoshihisa Kagawa , Gishi Chung
IPC分类号： H01L21/31
CPC分类号： H01L21/0234 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/3121
摘要： A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.
摘要翻译：形成低K电介质膜的方法包括以下步骤：将载有低K电介质膜的衬底放置在载物台上，加热载体上的低K电介质膜，通过等离子体处理低K电介质膜的含有氢气的处理气体，等离子体被激发，同时在低K电介质膜上提供处理气体，其中等离子体在将基板放置在载物台之后的90秒内被激发。

4. 发明申请

US20060205191A1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US20060205191A1
公开(公告)日：2006-09-14
申请号：US11431720
申请日：2006-05-11
申请人： Yusaku Kashiwagi , Yasuhiro Oshima , Yoshihisa Kagawa , Gishi Chung
发明人： Yusaku Kashiwagi , Yasuhiro Oshima , Yoshihisa Kagawa , Gishi Chung
IPC分类号： B08B6/00 , H01L21/20
CPC分类号： H01L21/0234 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/3121
摘要： A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.
摘要翻译：形成低K电介质膜的方法包括以下步骤：将载有低K电介质膜的衬底放置在载物台上，加热载体上的低K电介质膜，通过等离子体处理低K电介质膜的含有氢气的处理气体，等离子体被激发，同时在低K电介质膜上提供处理气体，其中等离子体在将基板放置在载物台之后的90秒内被激发。

5. 发明申请

US20060068104A1 Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
标题翻译：半导体器件制造工艺中的薄膜形成和成膜装置
公开(公告)号：US20060068104A1
公开(公告)日：2006-03-30
申请号：US11231962
申请日：2005-09-22
申请人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.
摘要翻译：用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b）将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤，将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

6. 发明申请

US20070160757A1 Processing method 审中-公开
标题翻译：加工方法
公开(公告)号：US20070160757A1
公开(公告)日：2007-07-12
申请号：US11717183
申请日：2007-03-13
申请人： Tadahiro Ishizaka , Hiroshi Kannan , Yasuhiko Kojima , Takashi Shigeoka , Yasuhiro Oshima , Kohei Kawamura
发明人： Tadahiro Ishizaka , Hiroshi Kannan , Yasuhiko Kojima , Takashi Shigeoka , Yasuhiro Oshima , Kohei Kawamura
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/4401 , C23C16/4412
摘要： In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.
摘要翻译：在通过交替供给多个源气体进行膜沉积的处理装置中，防止源气体在排气管内发生反应，以防止排气管因反应副产物而堵塞。供给到处理容器的气体在TiCl 4供应系统和NH 3供应系统之间切换。此外，来自处理容器的排气在TiCl 4排气系统和NH 3排气系统之间切换。当气体供应切换到TiCl 4供应系统时，排气被切换到TiCl 4排气系统，并且排气被切换到NH 3 3气体供应系统切换到NH 3供应系统时。通过设置在供给系统和排气系统中的每一个的截止阀进行切换。

7. 发明授权

US07717061B2 Gas switching mechanism for plasma processing apparatus 有权
标题翻译：等离子体处理装置的气体切换机构
公开(公告)号：US07717061B2
公开(公告)日：2010-05-18
申请号：US11232943
申请日：2005-09-23
申请人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
发明人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , F16K11/065 , F16K11/085 , F16K11/074 , F16K3/08 , F16K47/04
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/452 , C23C16/45561 , Y10T137/86558 , Y10T137/86566 , Y10T137/86638 , Y10T137/86726 , Y10T137/86743 , Y10T137/86751 , Y10T137/86871
摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
摘要翻译：公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

8. 发明申请

US20060027167A1 Processing apparatus and processing method 有权
标题翻译：处理装置及处理方法
公开(公告)号：US20060027167A1
公开(公告)日：2006-02-09
申请号：US11232943
申请日：2005-09-23
申请人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
发明人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
IPC分类号： C23C16/00
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/452 , C23C16/45561 , Y10T137/86558 , Y10T137/86566 , Y10T137/86638 , Y10T137/86726 , Y10T137/86743 , Y10T137/86751 , Y10T137/86871
摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
摘要翻译：公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

9. 发明授权

US08472056B2 Printing system and printing apparatus terminal for efficient processing of printing content 有权
标题翻译：打印系统和打印设备终端，可有效处理打印内容
公开(公告)号：US08472056B2
公开(公告)日：2013-06-25
申请号：US12729155
申请日：2010-03-22
申请人： Yasuhiro Oshima , Kenji Sakuda , Takafumi Higuchi
发明人： Yasuhiro Oshima , Kenji Sakuda , Takafumi Higuchi
IPC分类号： G06F3/12
CPC分类号： H04N1/00214 , G06F3/1209 , G06F3/1236 , H04N1/00217 , H04N1/00233 , H04N1/00347 , H04N2201/0039 , H04N2201/0094 , H04N2201/33314
摘要： A printing system includes a transmitting terminal, which transmits printable printing contents, and a printing apparatus terminal, which receives and prints the printing contents, which are connected to the printing system via an Internet protocol network.
摘要翻译：打印系统包括发送可打印内容的发送终端和经由因特网协议网络连接到打印系统的打印内容的打印装置终端。

10. 发明申请

US20120194864A1 Printing System And Printer 有权
标题翻译：打印系统和打印机
公开(公告)号：US20120194864A1
公开(公告)日：2012-08-02
申请号：US13360869
申请日：2012-01-30
申请人： Yasuhiro Oshima , Hirotaka Akamatsu , Yasuhiro Furuta
发明人： Yasuhiro Oshima , Hirotaka Akamatsu , Yasuhiro Furuta
IPC分类号： G06K15/02
CPC分类号： G06F3/1236 , G06F3/1204 , G06F3/1224 , G06F3/1231 , G06F3/1247 , G06F3/1272 , G06F3/1287 , G06F3/1288 , G06F3/1292 , G06F3/1294 , G06K15/005 , H04L41/0806 , H04L43/0817 , H04L51/08 , H04L67/02 , H04L67/025
摘要： A printing server includes a registration request reception unit, a registration unit which allocates connection information for connection with the transmission origin of the registration request and an electronic mail address for receiving a printing request to the transmission origin of the registration request, a registration information transmission unit which transmits the registration information which has been allocated, a connection unit which receives the connection information and starts connection, a printing data generation unit which generates printing data, a printing waiting information transmission unit which transmits printing waiting information to the transmission origin of the XMPP connection request using XMPP when the printing data is generated, and a printing data transmission unit which receives an acquisition request for the printing data and transmits the printing data to the transmission origin of the acquisition request for the printing data according to the acquisition request for the printing data.
摘要翻译：打印服务器包括注册请求接收单元，注册单元，其分配用于与注册请求的发送来源连接的连接信息和用于接收对注册请求的发送来源的打印请求的电子邮件地址，注册信息传输发送已经分配的注册信息的单元，接收连接信息并开始连接的连接单元，生成打印数据的打印数据生成单元，将打印等待信息发送到传送原稿的打印等待信息发送单元在生成打印数据时使用XMPP的XMPP连接请求以及接收对打印数据的获取请求的打印数据发送单元，并且将打印数据发送到根据打印数据的获取请求的发送原点 e获取打印数据的请求。

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