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1. 发明申请

US20100147685A1 GAS SENSOR 有权
标题翻译：气体传感器
公开(公告)号：US20100147685A1
公开(公告)日：2010-06-17
申请号：US12527824
申请日：2008-12-12
申请人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
发明人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
IPC分类号： G01N27/26
CPC分类号： G01N27/128
摘要： Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7). Therefore, the adhesion layer (7) need not be a complete insulating layer, and it is possible to use, as the adhesion layer, an incomplete insulating film or a conductive film, so that options of the adhesion layer (7) are increased.
摘要翻译：在气体感测层（4）和由硅衬底（2）和绝缘涂层（3）组成的基底构件（15）之间形成粘合层7，以改善它们之间的粘附性并防止分离。气体感测层（4）和感测电极（6）通过面对气体感测层（4）的感测电极（6）的相对表面（61）和两侧的感测电极的侧表面的邻接电连接，在气体感测层（4）上，因此气体传感器适当地感测根据特定气体的浓度变化而变化的气体感测层（4）的电特性。此外，感测电极（6）与气体感测层（4）接触，但感测电极不与粘附层（7）接触。因此，粘合层（7）不需要是完整的绝缘层，并且可以使用不完全绝缘膜或导电膜作为粘合层，使得粘附层（7）的选项增加。

2. 发明授权

US08393196B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US08393196B2
公开(公告)日：2013-03-12
申请号：US12527824
申请日：2008-12-12
申请人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
发明人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
IPC分类号： G01N7/00
CPC分类号： G01N27/128
摘要： Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7). Therefore, the adhesion layer (7) need not be a complete insulating layer, and it is possible to use, as the adhesion layer, an incomplete insulating film or a conductive film, so that options of the adhesion layer (7) are increased.
摘要翻译：在气体感测层（4）和由硅衬底（2）和绝缘涂层（3）组成的基底构件（15）之间形成粘合层7，以改善它们之间的粘附性并防止分离。气体感测层（4）和感测电极（6）通过面对气体感测层（4）的感测电极（6）的相对表面（61）和两侧的感测电极的侧表面的邻接电连接，在气体感测层（4）上，因此气体传感器适当地感测根据特定气体的浓度变化而变化的气体感测层（4）的电特性。此外，感测电极（6）与气体感测层（4）接触，但感测电极不与粘附层（7）接触。因此，粘合层（7）不需要是完整的绝缘层，并且可以使用不完全绝缘膜或导电膜作为粘合层，使得粘附层（7）的选项增加。

3. 发明授权

US07487675B2 Micro-heater and sensor 有权
标题翻译：微型加热器和传感器
公开(公告)号：US07487675B2
公开(公告)日：2009-02-10
申请号：US11347306
申请日：2006-02-06
申请人： Koichi Ikawa , Yoshinori Tsujimura , Takio Kojima
发明人： Koichi Ikawa , Yoshinori Tsujimura , Takio Kojima
IPC分类号： G01F1/692
CPC分类号： G01F1/6845 , H05B3/12 , H05B3/28 , H05B2203/013 , H05B2203/017
摘要： A micro-heater including a semiconductor substrate having a cavity; an insulating layer provided on an upper side of the semiconductor substrate and closing the cavity; and a heater element embedded in a portion of the insulating layer above the cavity and including a metallic material. The insulating layer includes: a compressive stress film made of silicon oxide; and a tensile stress film made of silicon nitride. The tensile stress film has a thickness not less than that of the compressive stress film.
摘要翻译：一种微加热器，包括具有空腔的半导体衬底; 绝缘层，设置在所述半导体衬底的上侧并闭合所述腔; 以及加热器元件，其嵌入在所述空腔上方的绝缘层的一部分中并且包括金属材料。绝缘层包括：由氧化硅制成的压应力膜; 和由氮化硅制成的拉伸应力膜。拉伸应力膜的厚度不小于压缩应力膜的厚度。

4. 发明申请

US20060196248A1 Oxidizing gas sensor and production method thereof 有权
标题翻译：氧化气体传感器及其制造方法
公开(公告)号：US20060196248A1
公开(公告)日：2006-09-07
申请号：US11359380
申请日：2006-02-23
申请人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
发明人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
IPC分类号： G01N7/00 , G01N33/50 , G08B17/10
CPC分类号： G01N27/125
摘要： There is provided an oxidizing gas sensor that includes an insulating substrate, a gas sensing layer laminated on the insulating substrate and substantially made of tin oxide so as to make resistance changes in response to concentration variations in oxidizing gas and a plurality of catalyst grains applied to a surface of the gas sensing layer and substantially made of gold, wherein 20% or more of the catalyst grains have an aspect ratio of 2.0 or greater when viewed at from the surface of the gas sensing layer.
摘要翻译：提供一种氧化气体传感器，其包括绝缘基板，层压在绝缘基板上并基本上由氧化锡制成的气体感测层，以便响应于氧化气体的浓度变化和施加到气体感测层的表面，并且基本上由金制成，其中当从气体感测层的表面观察时，其中20％或更多的催化剂颗粒具有2.0或更大的纵横比。

5. 发明授权

US07412871B2 Oxidizing gas sensor and production method thereof 有权
标题翻译：氧化气体传感器及其制造方法
公开(公告)号：US07412871B2
公开(公告)日：2008-08-19
申请号：US11359380
申请日：2006-02-23
申请人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
发明人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
IPC分类号： G01N7/00
CPC分类号： G01N27/125
摘要： There is provided an oxidizing gas sensor that includes an insulating substrate, a gas sensing layer laminated on the insulating substrate and substantially made of tin oxide so as to make resistance changes in response to concentration variations in oxidizing gas and a plurality of catalyst grains applied to a surface of the gas sensing layer and substantially made of gold, wherein 20% or more of the catalyst grains have an aspect ratio of 2.0 or greater when viewed at from the surface of the gas sensing layer.
摘要翻译：提供一种氧化气体传感器，其包括绝缘基板，层压在绝缘基板上并基本上由氧化锡制成的气体感测层，以便响应于氧化气体的浓度变化和施加到气体感测层的表面，并且基本上由金制成，其中当从气体感测层的表面观察时，其中20％或更多的催化剂颗粒具有2.0或更大的纵横比。

6. 发明申请

US20060185420A1 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US20060185420A1
公开(公告)日：2006-08-24
申请号：US11358621
申请日：2006-02-21
申请人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
发明人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
IPC分类号： G01N7/00
CPC分类号： G01N27/125
摘要： The present invention provides a gas sensor having excellent humidity resistance even if used in a high temperature and high humidity atmosphere. According to the present invention, a gas sensor is comprised of: a silicon substrate; a metal-oxide semiconductor portion comprised mainly of SnO2 and formed on the substrate; and a catalytic portion comprised of Pd and dispersed on a surface of the metal-oxide semiconductor portion, wherein the metal-oxide semiconductor portion and the catalytic portion constitute a gas sensing portion. Furthermore, an insulating portion comprised mainly of SiO2 is formed dispersedly on a surface of the gas sensing portion. Further, the catalytic portion and the insulating portion are formed on the surface of the metal-oxide semiconductor portion so that the surface additive rate, which is expressed by Si/(Pd+Si) representing the ratio in the number of atoms of Si to Pd, of the gas sensing portion having the insulating portion may be 65% or more to 97% or less, and so that the surface additive rate, which is expressed by Si/(Sn+Si) representing the ratio in the number of atoms of Si to Sn, of the gas sensing portion may be 75% or more to 97% or less.
摘要翻译：本发明提供即使在高温高湿环境下使用也具有优异的耐湿性的气体传感器。根据本发明，气体传感器包括：硅衬底; 主要由SnO 2 N 2组成并形成在基板上的金属氧化物半导体部分; 以及由Pd构成并分散在金属氧化物半导体部分的表面上的催化部分，其中金属氧化物半导体部分和催化部分构成气体感测部分。此外，主要由SiO 2 2组成的绝缘部分分散地形成在气体感测部分的表面上。此外，催化剂部分和绝缘部分形成在金属氧化物半导体部分的表面上，使得由Si /（Pd + Si）表示的表示添加剂率表示Si原子数与Si 具有绝缘部分的气体感测部分的Pd可以为65％以上至97％以下，并且表示以表示原子数比的Si /（Sn + Si）表示的表面添加率 Si至Sn的气体检测部分可以为75％以上至97％以下。

7. 发明授权

US07276745B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US07276745B2
公开(公告)日：2007-10-02
申请号：US11358621
申请日：2006-02-21
申请人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
发明人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
IPC分类号： H01L23/58 , G01N7/00
CPC分类号： G01N27/125
摘要： The present invention provides a gas sensor having excellent humidity resistance even if used in a high temperature and high humidity atmosphere. According to the present invention, a gas sensor is comprised of: a silicon substrate; a metal-oxide semiconductor portion comprised mainly of SnO2 and formed on the substrate; and a catalytic portion comprised of Pd and dispersed on a surface of the metal-oxide semiconductor portion, wherein the metal-oxide semiconductor portion and the catalytic portion constitute a gas sensing portion. Furthermore, an insulating portion comprised mainly of SiO2 is formed dispersedly on a surface of the gas sensing portion. Further, the catalytic portion and the insulating portion are formed on the surface of the metal-oxide semiconductor portion so that the surface additive rate, which is expressed by Si/(Pd+Si) representing the ratio in the number of atoms of Si to Pd, of the gas sensing portion having the insulating portion may be 65% or more to 97% or less, and so that the surface additive rate, which is expressed by Si/(Sn+Si) representing the ratio in the number of atoms of Si to Sn, of the gas sensing portion may be 75% or more to 97% or less.
摘要翻译：本发明提供即使在高温高湿环境下使用也具有优异的耐湿性的气体传感器。根据本发明，气体传感器包括：硅衬底; 主要由SnO 2 N 2组成并形成在基板上的金属氧化物半导体部分; 以及由Pd构成并分散在金属氧化物半导体部分的表面上的催化部分，其中金属氧化物半导体部分和催化部分构成气体感测部分。此外，主要由SiO 2 2组成的绝缘部分分散地形成在气体感测部分的表面上。此外，催化剂部分和绝缘部分形成在金属氧化物半导体部分的表面上，使得由Si /（Pd + Si）表示的表示添加剂率表示Si原子数与Si 具有绝缘部分的气体感测部分的Pd可以为65％以上至97％以下，并且表示以表示原子数比的Si /（Sn + Si）表示的表面添加率 Si至Sn的气体检测部分可以为75％以上至97％以下。

8. 发明授权

US06805003B2 Mass flow sensor and mass flowmeter comprising the same 失效
标题翻译：包括其的质量流量传感器和质量流量计
公开(公告)号：US06805003B2
公开(公告)日：2004-10-19
申请号：US09962346
申请日：2001-09-26
申请人： Masatoshi Ueki , Takio Kojima , Yoshinori Tsujimura , Kouichi Ikawa , Yoshihiko Kohmura , Takafumi Oshima
发明人： Masatoshi Ueki , Takio Kojima , Yoshinori Tsujimura , Kouichi Ikawa , Yoshihiko Kohmura , Takafumi Oshima
IPC分类号： G01F168
CPC分类号： G01F1/6845
摘要： A mass flow sensor includes a semiconductor substrate 1, an insulating thin film 2, heaters 311 and 312, temperature measurement resistors 321 and 322, and a protective layer 4. The heaters 311 and 312 are formed on the surface of the insulating thin film 2, and are provided adjacently such that the heater 311 is provided upstream the heater 312 and the heater 312 is provided downstream the heater 311. A cavity 5 is formed below the heaters 311 and 312, and the heaters are thermally insulated from the remaining portion of the semiconductor substrate. The temperature measurement resistors 321 and 322 are formed on the top surface of the insulating thin film 2, and are provided at opposite sides of the heaters 311 and 312, such that the resistors are aligned with respect to the flow passage of a fluid. In the mass flow sensor and the mass flowmeter including the sensor, the flow rate and flow direction of a fluid can be detected by means of merely the heaters 311 and 312, which are active elements. Therefore, the sensor and the flowmeter exhibits high-speed response with respect to change in the flow rate of the fluid.
摘要翻译：质量流量传感器包括半导体衬底1，绝缘薄膜2，加热器311和312，温度测量电阻321和322以及保护层4.加热器311和312形成在绝缘薄膜2的表面上并且相邻地设置，使得加热器311设置在加热器312的上游，并且加热器312设置在加热器311的下游。空腔5形成在加热器311和312的下方，并且加热器与剩余部分半导体衬底。温度测量电阻器321和322形成在绝缘薄膜2的顶表面上，并且设置在加热器311和312的相对侧，使得电阻器相对于流体的流动通道对准。在包括传感器的质量流量传感器和质量流量计中，流体的流速和流动方向可以仅通过作为有源元件的加热器311和312来检测。因此，传感器和流量计相对于流体的流量变化表现出高速响应。

9. 发明申请

US20060174703A1 Micro-heater and sensor 有权
公开(公告)号：US20060174703A1
公开(公告)日：2006-08-10
申请号：US11347306
申请日：2006-02-06
申请人： Koichi Ikawa , Yashinori Tsujimura , Takio Kojima
发明人： Koichi Ikawa , Yashinori Tsujimura , Takio Kojima
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , H05B3/12 , H05B3/28 , H05B2203/013 , H05B2203/017
摘要： A micro-heater including a semiconductor substrate having a cavity; an insulating layer provided on an upper side of the semiconductor substrate and closing the cavity; and a heater element embedded in a portion of the insulating layer above the cavity and including a metallic material. The insulating layer includes: a compressive stress film made of silicon oxide; and a tensile stress film made of silicon nitride. The tensile stress film has a thickness not less than that of the compressive stress film.

10. 发明授权

US08410801B2 Pressure detection apparatus 有权
标题翻译：压力检测装置
公开(公告)号：US08410801B2
公开(公告)日：2013-04-02
申请号：US12569976
申请日：2009-09-30
申请人： Toshiyuki Matsuoka , Yuzo Higuchi , Yoshinori Tsujimura , Takio Kojima
发明人： Toshiyuki Matsuoka , Yuzo Higuchi , Yoshinori Tsujimura , Takio Kojima
IPC分类号： G01R27/08
CPC分类号： G01L23/18 , G01L9/065 , G01L23/22
摘要： A pressure detection apparatus has a pressure-sensitive resistor whose first resistance varies according to pressure and a change of its own temperature, a temperature-sensitive resistor which has a same resistance-temperature coefficient as the pressure-sensitive resistor and whose second resistance varies according to the change of the temperature, a current source supplying first and second constant-currents to the pressure-sensitive and temperature-sensitive resistors respectively, and a pressure signal generation output section. The current source adjusts the first and second constant-currents so that when the pressure is an initial pressure, a reference first voltage appearing across the pressure-sensitive resistor and a reference second voltage appearing across the temperature-sensitive resistor become equal to each other. The pressure signal generation output section outputs a first voltage signal corresponding to the pressure on the basis of a difference voltage between a first voltage of the pressure-sensitive resistor and a second voltage of the temperature-sensitive resistor.
摘要翻译：压力检测装置具有压敏电阻器，其第一电阻根据压力和其自身温度的变化而变化，温度敏感电阻器具有与压敏电阻器相同的电阻温度系数，并且其第二电阻根据对于温度的变化，分别向压敏电阻器和温度敏感电阻器提供第一和第二恒定电流的电流源以及压力信号产生输出部分。电流源调节第一和第二恒定电流，使得当压力为初始压力时，跨压敏电阻器出现的参考第一电压和跨过温度敏感电阻器出现的基准第二电压变得彼此相等。压力信号生成输出部根据压敏电阻的第一电压与感温电阻的第二电压之间的差分电压，输出与压力对应的第一电压信号。

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