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1. 发明申请

US20060196248A1 Oxidizing gas sensor and production method thereof 有权
标题翻译：氧化气体传感器及其制造方法
公开(公告)号：US20060196248A1
公开(公告)日：2006-09-07
申请号：US11359380
申请日：2006-02-23
申请人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
发明人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
IPC分类号： G01N7/00 , G01N33/50 , G08B17/10
CPC分类号： G01N27/125
摘要： There is provided an oxidizing gas sensor that includes an insulating substrate, a gas sensing layer laminated on the insulating substrate and substantially made of tin oxide so as to make resistance changes in response to concentration variations in oxidizing gas and a plurality of catalyst grains applied to a surface of the gas sensing layer and substantially made of gold, wherein 20% or more of the catalyst grains have an aspect ratio of 2.0 or greater when viewed at from the surface of the gas sensing layer.
摘要翻译：提供一种氧化气体传感器，其包括绝缘基板，层压在绝缘基板上并基本上由氧化锡制成的气体感测层，以便响应于氧化气体的浓度变化和施加到气体感测层的表面，并且基本上由金制成，其中当从气体感测层的表面观察时，其中20％或更多的催化剂颗粒具有2.0或更大的纵横比。

2. 发明授权

US07412871B2 Oxidizing gas sensor and production method thereof 有权
标题翻译：氧化气体传感器及其制造方法
公开(公告)号：US07412871B2
公开(公告)日：2008-08-19
申请号：US11359380
申请日：2006-02-23
申请人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
发明人： Yoshihiro Nakano , Masahito Kida , Shinichi Nakagawa , Takio Kojima
IPC分类号： G01N7/00
CPC分类号： G01N27/125
摘要： There is provided an oxidizing gas sensor that includes an insulating substrate, a gas sensing layer laminated on the insulating substrate and substantially made of tin oxide so as to make resistance changes in response to concentration variations in oxidizing gas and a plurality of catalyst grains applied to a surface of the gas sensing layer and substantially made of gold, wherein 20% or more of the catalyst grains have an aspect ratio of 2.0 or greater when viewed at from the surface of the gas sensing layer.
摘要翻译：提供一种氧化气体传感器，其包括绝缘基板，层压在绝缘基板上并基本上由氧化锡制成的气体感测层，以便响应于氧化气体的浓度变化和施加到气体感测层的表面，并且基本上由金制成，其中当从气体感测层的表面观察时，其中20％或更多的催化剂颗粒具有2.0或更大的纵横比。

3. 发明申请

US20060185420A1 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US20060185420A1
公开(公告)日：2006-08-24
申请号：US11358621
申请日：2006-02-21
申请人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
发明人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
IPC分类号： G01N7/00
CPC分类号： G01N27/125
摘要： The present invention provides a gas sensor having excellent humidity resistance even if used in a high temperature and high humidity atmosphere. According to the present invention, a gas sensor is comprised of: a silicon substrate; a metal-oxide semiconductor portion comprised mainly of SnO2 and formed on the substrate; and a catalytic portion comprised of Pd and dispersed on a surface of the metal-oxide semiconductor portion, wherein the metal-oxide semiconductor portion and the catalytic portion constitute a gas sensing portion. Furthermore, an insulating portion comprised mainly of SiO2 is formed dispersedly on a surface of the gas sensing portion. Further, the catalytic portion and the insulating portion are formed on the surface of the metal-oxide semiconductor portion so that the surface additive rate, which is expressed by Si/(Pd+Si) representing the ratio in the number of atoms of Si to Pd, of the gas sensing portion having the insulating portion may be 65% or more to 97% or less, and so that the surface additive rate, which is expressed by Si/(Sn+Si) representing the ratio in the number of atoms of Si to Sn, of the gas sensing portion may be 75% or more to 97% or less.
摘要翻译：本发明提供即使在高温高湿环境下使用也具有优异的耐湿性的气体传感器。根据本发明，气体传感器包括：硅衬底; 主要由SnO 2 N 2组成并形成在基板上的金属氧化物半导体部分; 以及由Pd构成并分散在金属氧化物半导体部分的表面上的催化部分，其中金属氧化物半导体部分和催化部分构成气体感测部分。此外，主要由SiO 2 2组成的绝缘部分分散地形成在气体感测部分的表面上。此外，催化剂部分和绝缘部分形成在金属氧化物半导体部分的表面上，使得由Si /（Pd + Si）表示的表示添加剂率表示Si原子数与Si 具有绝缘部分的气体感测部分的Pd可以为65％以上至97％以下，并且表示以表示原子数比的Si /（Sn + Si）表示的表面添加率 Si至Sn的气体检测部分可以为75％以上至97％以下。

4. 发明授权

US07276745B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US07276745B2
公开(公告)日：2007-10-02
申请号：US11358621
申请日：2006-02-21
申请人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
发明人： Shinichi Nakagawa , Yoshihiro Nakano , Masahito Kida , Takio Kojima
IPC分类号： H01L23/58 , G01N7/00
CPC分类号： G01N27/125
摘要： The present invention provides a gas sensor having excellent humidity resistance even if used in a high temperature and high humidity atmosphere. According to the present invention, a gas sensor is comprised of: a silicon substrate; a metal-oxide semiconductor portion comprised mainly of SnO2 and formed on the substrate; and a catalytic portion comprised of Pd and dispersed on a surface of the metal-oxide semiconductor portion, wherein the metal-oxide semiconductor portion and the catalytic portion constitute a gas sensing portion. Furthermore, an insulating portion comprised mainly of SiO2 is formed dispersedly on a surface of the gas sensing portion. Further, the catalytic portion and the insulating portion are formed on the surface of the metal-oxide semiconductor portion so that the surface additive rate, which is expressed by Si/(Pd+Si) representing the ratio in the number of atoms of Si to Pd, of the gas sensing portion having the insulating portion may be 65% or more to 97% or less, and so that the surface additive rate, which is expressed by Si/(Sn+Si) representing the ratio in the number of atoms of Si to Sn, of the gas sensing portion may be 75% or more to 97% or less.
摘要翻译：本发明提供即使在高温高湿环境下使用也具有优异的耐湿性的气体传感器。根据本发明，气体传感器包括：硅衬底; 主要由SnO 2 N 2组成并形成在基板上的金属氧化物半导体部分; 以及由Pd构成并分散在金属氧化物半导体部分的表面上的催化部分，其中金属氧化物半导体部分和催化部分构成气体感测部分。此外，主要由SiO 2 2组成的绝缘部分分散地形成在气体感测部分的表面上。此外，催化剂部分和绝缘部分形成在金属氧化物半导体部分的表面上，使得由Si /（Pd + Si）表示的表示添加剂率表示Si原子数与Si 具有绝缘部分的气体感测部分的Pd可以为65％以上至97％以下，并且表示以表示原子数比的Si /（Sn + Si）表示的表面添加率 Si至Sn的气体检测部分可以为75％以上至97％以下。

5. 发明申请

US20080257732A1 GAS SENSOR 有权
标题翻译：气体传感器
公开(公告)号：US20080257732A1
公开(公告)日：2008-10-23
申请号：US12015238
申请日：2008-01-16
申请人： Yoshihiro NAKANO , Shinichi Nakagawa , Yuichi Koyama , Takio Kojima
发明人： Yoshihiro NAKANO , Shinichi Nakagawa , Yuichi Koyama , Takio Kojima
IPC分类号： G01N27/26
CPC分类号： G01N27/16 , Y10T428/2982
摘要： There is provided a gas sensor, including a gas sensing film formed of an oxide semiconductor material and a gas-permeable protection layer formed of oxide particles and arranged on the gas sensing film. The oxide particles of the protection layer have an average particle size of 500 nm or smaller.
摘要翻译：提供了一种气体传感器，其包括由氧化物半导体材料形成的气体感测膜和由氧化物颗粒形成并且设置在气体感测膜上的透气保护层。保护层的氧化物粒子的平均粒径为500nm以下。

6. 发明授权

US07993506B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US07993506B2
公开(公告)日：2011-08-09
申请号：US12015238
申请日：2008-01-16
申请人： Yoshihiro Nakano , Shinichi Nakagawa , Yuichi Koyama , Takio Kojima
发明人： Yoshihiro Nakano , Shinichi Nakagawa , Yuichi Koyama , Takio Kojima
IPC分类号： G01N27/26 , G01N27/417 , B05D5/12
CPC分类号： G01N27/16 , Y10T428/2982
摘要： There is provided a gas sensor, including a gas sensing film formed of an oxide semiconductor material and a gas-permeable protection layer formed of oxide particles and arranged on the gas sensing film. The oxide particles of the protection layer have an average particle size of 500 nm or smaller.
摘要翻译：提供了一种气体传感器，其包括由氧化物半导体材料形成的气体感测膜和由氧化物颗粒形成并且设置在气体感测膜上的透气保护层。保护层的氧化物粒子的平均粒径为500nm以下。

7. 发明申请

US20100147685A1 GAS SENSOR 有权
标题翻译：气体传感器
公开(公告)号：US20100147685A1
公开(公告)日：2010-06-17
申请号：US12527824
申请日：2008-12-12
申请人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
发明人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
IPC分类号： G01N27/26
CPC分类号： G01N27/128
摘要： Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7). Therefore, the adhesion layer (7) need not be a complete insulating layer, and it is possible to use, as the adhesion layer, an incomplete insulating film or a conductive film, so that options of the adhesion layer (7) are increased.
摘要翻译：在气体感测层（4）和由硅衬底（2）和绝缘涂层（3）组成的基底构件（15）之间形成粘合层7，以改善它们之间的粘附性并防止分离。气体感测层（4）和感测电极（6）通过面对气体感测层（4）的感测电极（6）的相对表面（61）和两侧的感测电极的侧表面的邻接电连接，在气体感测层（4）上，因此气体传感器适当地感测根据特定气体的浓度变化而变化的气体感测层（4）的电特性。此外，感测电极（6）与气体感测层（4）接触，但感测电极不与粘附层（7）接触。因此，粘合层（7）不需要是完整的绝缘层，并且可以使用不完全绝缘膜或导电膜作为粘合层，使得粘附层（7）的选项增加。

8. 发明授权

US08393196B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US08393196B2
公开(公告)日：2013-03-12
申请号：US12527824
申请日：2008-12-12
申请人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
发明人： Koichi Ikawa , Masahito Kida , Shinichiro Kito , Yoshinori Tsujimura , Takio Kojima
IPC分类号： G01N7/00
CPC分类号： G01N27/128
摘要： Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7). Therefore, the adhesion layer (7) need not be a complete insulating layer, and it is possible to use, as the adhesion layer, an incomplete insulating film or a conductive film, so that options of the adhesion layer (7) are increased.
摘要翻译：在气体感测层（4）和由硅衬底（2）和绝缘涂层（3）组成的基底构件（15）之间形成粘合层7，以改善它们之间的粘附性并防止分离。气体感测层（4）和感测电极（6）通过面对气体感测层（4）的感测电极（6）的相对表面（61）和两侧的感测电极的侧表面的邻接电连接，在气体感测层（4）上，因此气体传感器适当地感测根据特定气体的浓度变化而变化的气体感测层（4）的电特性。此外，感测电极（6）与气体感测层（4）接触，但感测电极不与粘附层（7）接触。因此，粘合层（7）不需要是完整的绝缘层，并且可以使用不完全绝缘膜或导电膜作为粘合层，使得粘附层（7）的选项增加。

9. 发明申请

US20130214881A1 RELAY 审中-公开
标题翻译：中继
公开(公告)号：US20130214881A1
公开(公告)日：2013-08-22
申请号：US13882646
申请日：2011-10-31
申请人： Shinsuke Ito , Youichi Hattori , Norihiko Nadanami , Ryuji Inoue , Takeshi Mitsuoka , Takio Kojima
发明人： Shinsuke Ito , Youichi Hattori , Norihiko Nadanami , Ryuji Inoue , Takeshi Mitsuoka , Takio Kojima
IPC分类号： H01H33/18
CPC分类号： H01H50/546 , H01H1/20 , H01H9/44 , H01H9/443 , H01H33/18 , H01H45/00 , H01H50/02 , H01H50/023 , H01H50/38 , H01H50/54 , H01H2050/025 , H01H2050/028
摘要： A relay includes a pair of fixed terminals arranged to respectively have fixed contacts, a movable contact member arranged to have a pair of movable contacts, a driving structure operated to move the movable contact member and a magnet arranged to extinguish an arc. The movable contact member has a center section located between the pair of movable contacts. The magnet is placed on at least one of a first side and a second side that face each other across a predetermined face including the movable contact member and the pair of fixed terminals electrically connected by the movable contact member. The magnet is arranged to have a magnitude relation that a center area where the center section is located has a lower magnetic flux density than movable contact portions where the pair of movable contacts are located.
摘要翻译：继电器包括：一对固定端子，分别具有固定触点;可动触头构件，其布置成具有一对可动触头;驱动结构，用于移动可动触头构件;以及磁铁，其布置成熄灭电弧。可动接触构件具有位于该对可动触点之间的中心部分。磁体被放置在包括可动接触构件和由可动接触构件电连接的一对固定端子的预定面上彼此面对的第一侧面和第二侧面中的至少一方。磁体被布置成具有与中心部分所在的中心区域相比具有比可动接触件对可移动接点的位置更低的磁通密度的大小关系。

10. 发明授权

US4984927A Ceramic and metal joining structure 失效
标题翻译：陶瓷和金属接合结构
公开(公告)号：US4984927A
公开(公告)日：1991-01-15
申请号：US312383
申请日：1989-02-17
申请人： Takio Kojima , Masaya Ito
发明人： Takio Kojima , Masaya Ito
IPC分类号： B23K20/00 , C04B37/02 , F01D5/04 , F16D1/068
CPC分类号： C04B37/026 , F16D1/068 , C04B2237/123 , C04B2237/125 , C04B2237/126 , C04B2237/368 , C04B2237/403 , C04B2237/406 , C04B2237/72 , C04B2237/76 , C04B2237/88 , Y10T403/217 , Y10T403/479 , Y10T403/48 , Y10T403/74
摘要： Ceramic and metal shafts are joined at their ends by brazing, with a buffer member being interposed therebetween. The joined ends of the ceramic and metal shafts and the buffer member are received within a metal sleeve and joined by brazing to part of the inner circumferential wall of the metal sleeve in such a manner than an axial end of the joint where the inner circumferential wall is securely joined to the ceramic and metal shafts is positioned between opposite axial ends of the metal sleeve and at the same time between opposite axial ends of the ceramic shaft. The outer circumferential wall of the metal sleeve is formed with an annular groove in the place corresponding to the above mentioned axial end of the joint with respect to the axial direction of the metal sleeve.
摘要翻译：陶瓷和金属轴在其端部通过钎焊接合，缓冲构件插入其间。陶瓷和金属轴和缓冲构件的接合端容纳在金属套筒内，并且以与接头的轴向端部不同的方式通过钎焊连接到金属套筒的内周壁的一部分，其中内周壁被牢固地接合到陶瓷上，并且金属轴定位在金属套筒的相对的轴向端部之间并且同时位于陶瓷轴的相对的轴向端部之间。金属套筒的外周壁相对于金属套筒的轴向在与接头的上述轴向端相对应的位置上形成有环形槽。

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