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1. 发明授权

US06805003B2 Mass flow sensor and mass flowmeter comprising the same 失效
标题翻译：包括其的质量流量传感器和质量流量计
公开(公告)号：US06805003B2
公开(公告)日：2004-10-19
申请号：US09962346
申请日：2001-09-26
申请人： Masatoshi Ueki , Takio Kojima , Yoshinori Tsujimura , Kouichi Ikawa , Yoshihiko Kohmura , Takafumi Oshima
发明人： Masatoshi Ueki , Takio Kojima , Yoshinori Tsujimura , Kouichi Ikawa , Yoshihiko Kohmura , Takafumi Oshima
IPC分类号： G01F168
CPC分类号： G01F1/6845
摘要： A mass flow sensor includes a semiconductor substrate 1, an insulating thin film 2, heaters 311 and 312, temperature measurement resistors 321 and 322, and a protective layer 4. The heaters 311 and 312 are formed on the surface of the insulating thin film 2, and are provided adjacently such that the heater 311 is provided upstream the heater 312 and the heater 312 is provided downstream the heater 311. A cavity 5 is formed below the heaters 311 and 312, and the heaters are thermally insulated from the remaining portion of the semiconductor substrate. The temperature measurement resistors 321 and 322 are formed on the top surface of the insulating thin film 2, and are provided at opposite sides of the heaters 311 and 312, such that the resistors are aligned with respect to the flow passage of a fluid. In the mass flow sensor and the mass flowmeter including the sensor, the flow rate and flow direction of a fluid can be detected by means of merely the heaters 311 and 312, which are active elements. Therefore, the sensor and the flowmeter exhibits high-speed response with respect to change in the flow rate of the fluid.
摘要翻译：质量流量传感器包括半导体衬底1，绝缘薄膜2，加热器311和312，温度测量电阻321和322以及保护层4.加热器311和312形成在绝缘薄膜2的表面上并且相邻地设置，使得加热器311设置在加热器312的上游，并且加热器312设置在加热器311的下游。空腔5形成在加热器311和312的下方，并且加热器与剩余部分半导体衬底。温度测量电阻器321和322形成在绝缘薄膜2的顶表面上，并且设置在加热器311和312的相对侧，使得电阻器相对于流体的流动通道对准。在包括传感器的质量流量传感器和质量流量计中，流体的流速和流动方向可以仅通过作为有源元件的加热器311和312来检测。因此，传感器和流量计相对于流体的流量变化表现出高速响应。

2. 发明授权

US07408437B2 Resistance element, its precursor, and resistance value adjusting method 失效
标题翻译：电阻元件，其前体和电阻值调整方法
公开(公告)号：US07408437B2
公开(公告)日：2008-08-05
申请号：US11597048
申请日：2005-05-12
申请人： Masatoshi Ueki , Hitoshi Yokoi
发明人： Masatoshi Ueki , Hitoshi Yokoi
IPC分类号： H01C10/00
CPC分类号： H01C17/242 , H01C17/23 , H01C17/24
摘要： An object of the invention is to provide a resistor element that makes it possible to adjust the resistance value of a precursor easily in producing a resistance element having a target resistance value from the precursor, as well as to the precursor and a related resistance value adjusting method.A precursor 70 has a meandering resistance pattern formed on a front surface 11 of a substrate 10 as well as at least three trimming lines. The precursor 70 is configured so as to be defined by a geometric sequence that satisfies Inequality 0.5αk
摘要翻译：本发明的目的是提供一种电阻元件，其可以在制造具有来自前驱体的目标电阻值的电阻元件以及前体和相关电阻值调整时，容易地调节前体的电阻值方法。前体70具有形成在基板10的前表面11上的曲折电阻图案以及至少三个修整线。前体70被配置为由满足不等式的半数k + 1的几何序列定义，其中α是通过按照降序排列在切割各个修剪线时前体的电阻值增加而获得的序列的通用术语，并且将这样排列的电阻归一化在未切割修剪线的状态下，前体的初始电阻值增加。

3. 发明授权

US07339455B2 Platinum resistor temperature sensor 有权
标题翻译：铂电阻温度传感器
公开(公告)号：US07339455B2
公开(公告)日：2008-03-04
申请号：US11074075
申请日：2005-03-08
申请人： Koichi Fujita , Masatoshi Ueki , Hitoshi Yokoi
发明人： Koichi Fujita , Masatoshi Ueki , Hitoshi Yokoi
IPC分类号： H01C3/04
CPC分类号： G01K7/18 , G01K13/02 , G01K2013/024 , G01K2205/04 , H01C7/006 , H01C7/008
摘要： A platinum temperature sensor incorporating an evaporation-suppressing layer containing platinum in the vicinity of the platinum thin-film resistor of the sensor. The evaporation-suppressing layer is preferably positioned between the platinum resistor and a porous layer that is formed close to the platinum resistor and in contact with the evaporation-suppressing layer.
摘要翻译：在传感器的铂薄膜电阻附近配有含有铂的蒸发抑制层的铂温度传感器。蒸发抑制层优选位于铂电阻器和靠近铂电阻器并与蒸发抑制层接触的多孔层之间。

4. 发明申请

US20080048823A1 Resistance Element, Its Precursor, and Resistance Value Adjusting Method 失效
标题翻译：电阻元件，其前体和电阻值调整方法
公开(公告)号：US20080048823A1
公开(公告)日：2008-02-28
申请号：US11597048
申请日：2005-05-12
申请人： Masatoshi Ueki , Hitoshi Yokoi
发明人： Masatoshi Ueki , Hitoshi Yokoi
IPC分类号： H01C10/00
CPC分类号： H01C17/242 , H01C17/23 , H01C17/24
摘要： An object of the invention is to provide a resistor element that makes it possible to adjust the resistance value of a precursor easily in producing a resistance element having a target resistance value from the precursor, as well as to the precursor and a related resistance value adjusting method. A precursor 70 has a meandering resistance pattern formed on a front surface 11 of a substrate 10 as well as at least three trimming lines. The precursor 70 is configured so as to be defined by a geometric sequence that satisfies Inequality 0.5αk
摘要翻译：本发明的目的是提供一种电阻元件，其可以在制造具有来自前驱体的目标电阻值的电阻元件以及前体和相关电阻值调整时，容易地调节前体的电阻值方法。前体70具有形成在基板10的前表面11上的曲折电阻图案以及至少三个修整线。前体70被配置为由满足不等式的半数k + 1的几何序列定义，其中α是通过按照降序排列在切割各个修剪线时前体的电阻值增加而获得的序列的通用术语，并且将这样排列的电阻标准化在未切割修剪线的状态下，前体的初始电阻值增加。

5. 发明申请

US20050200448A1 Platinum resistor temperature sensor 有权
标题翻译：铂电阻温度传感器
公开(公告)号：US20050200448A1
公开(公告)日：2005-09-15
申请号：US11074075
申请日：2005-03-08
申请人： Koichi Fujita , Masatoshi Ueki , Hitoshi Yokoi
发明人： Koichi Fujita , Masatoshi Ueki , Hitoshi Yokoi
IPC分类号： G01K7/18 , G01K13/02 , H01C3/04
CPC分类号： G01K7/18 , G01K13/02 , G01K2013/024 , G01K2205/04 , H01C7/006 , H01C7/008
摘要： A platinum temperature sensor incorporating an evaporation-suppressing layer containing platinum in the vicinity of the platinum thin-film resistor of the sensor. The evaporation-suppressing layer is preferably positioned between the platinum resistor and a porous layer that is formed close to the platinum resistor and in contact with the evaporation-suppressing layer.
摘要翻译：在传感器的铂薄膜电阻附近配有含有铂的蒸发抑制层的铂温度传感器。蒸发抑制层优选位于铂电阻器和靠近铂电阻器并与蒸发抑制层接触的多孔层之间。

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