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1. 发明申请

US20100052799A1 VOLTAGE CONTROLLED OSCILLATOR, MMIC, AND HIGH FREQUENCY WIRELESS DEVICE 审中-公开
标题翻译：电压控制振荡器，MMIC和高频无线设备
公开(公告)号：US20100052799A1
公开(公告)日：2010-03-04
申请号：US12473317
申请日：2009-05-28
申请人： Shinsuke Watanabe , Seiki Goto , Yoshihiro Tsukahara , Ko Kanaya
发明人： Shinsuke Watanabe , Seiki Goto , Yoshihiro Tsukahara , Ko Kanaya
IPC分类号： H03L7/00
CPC分类号： H03L7/099 , H03B5/1847
摘要： A voltage controlled oscillator having low phase noise and including: a variable resonator including a varactor and a control voltage terminal; and an open-end stub connected in parallel to the variable resonator, the open-end stub having a length shorter than or equal to an odd multiple of one quarter of a wavelength of a harmonic signal plus one sixteenth of the wavelength of the harmonic signal, and longer than or equal to an odd multiple of one quarter of the wavelength of the harmonic signal minus one sixteenth of the wavelength of the harmonic signal. In this structure, a high Q value is realized for a fundamental wave frequency. Fluctuation in a control voltage due to a harmonic signal is controlled.
摘要翻译：一种具有低相位噪声的压控振荡器，包括：包括变容二极管和控制电压端子的可变谐振器; 以及与可变谐振器并联连接的开路短截线，开路短截线长度短于或等于谐波信号的波长的四分之一加上谐波信号的波长的十六分之一的奇数倍并且长于或等于谐波信号的四分之一波长的奇数倍减去谐波信号的波长的十六分之一。在该结构中，对于基波频率实现高Q值。控制由于谐波信号引起的控制电压的波动。

2. 发明授权

US07714664B2 Cascode circuit 失效
标题翻译：串联电路
公开(公告)号：US07714664B2
公开(公告)日：2010-05-11
申请号：US12421664
申请日：2009-04-10
申请人： Ko Kanaya , Seiki Goto , Shinsuke Watanabe
发明人： Ko Kanaya , Seiki Goto , Shinsuke Watanabe
IPC分类号： H03F3/04
CPC分类号： H03F1/226 , H03F1/0261 , H03F3/1935 , H03F2200/18 , H03F2200/27 , H03F2200/451 , H03F2200/534 , H03F2200/541
摘要： A cascode circuit for a high-gain or high-output millimeter-wave device that operates with stability. The cascode circuit including two cascode-connected transistors includes: a first high electron mobility transistor (HEMT) including a source that is grounded; a second HEMT including a source connected to a drain of the first HEMT; a reflection gain restricting resistance connected to the gate of the second HEMT, for restricting reflection gain; and an open stub connected to a side of the reflection gain restricting resistance which is opposite the side connected to the second HEMT, for short-circuiting high-frequency signals at a predetermined frequency and nearby frequencies.
摘要翻译：用于稳定运行的高增益或高输出毫米波器件的共源共栅电路。包括两个共源共栅连接的晶体管的共源共栅电路包括：包括接地的源的第一高电子迁移率晶体管（HEMT）; 包括连接到第一HEMT的漏极的源的第二HEMT; 连接到第二HEMT的栅极的反射增益限制电阻，用于限制反射增益; 以及连接到反射增益限制电阻的与连接到第二HEMT的一侧相反的一侧的开路短路，用于以预定频率和附近频率短路高频信号。

3. 发明申请

US20110175686A1 HIGH FREQUENCY SECOND HARMONIC OSCILLATOR 审中-公开
标题翻译：高频二次谐波振荡器
公开(公告)号：US20110175686A1
公开(公告)日：2011-07-21
申请号：US12911764
申请日：2010-10-26
申请人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
发明人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
IPC分类号： H03B5/12
CPC分类号： H03B5/1847 , H03D2200/0086
摘要： A high frequency second harmonic oscillator includes a transistor, a first signal line connected at a first end to the base or gate of the transistor, a first shunt capacitor connected at a first end to a second end of the first signal line and at a second end to ground, a second signal line connected at a first end to the collector or drain of the transistor, a second shunt capacitor connected at a first end to a second end of the second signal line and at a second end to ground, and a high capacitance capacitor connected between the first signal line and the second signal line. The first signal line has a length equal to an odd integer multiple of one quarter of the wavelength of a fundamental signal, plus or minus one-sixteenth of the wavelength of the fundamental signal.
摘要翻译：高频二次谐波振荡器包括晶体管，在第一端连接到晶体管的基极或栅极的第一信号线，在第一端连接到第一信号线的第二端的第一并联电容器，在第一端连接到晶体管的集电极或漏极的第二信号线，在第一端连接到第二信号线的第二端并在第二端连接到地的第二并联电容器，以及连接在第一信号线和第二信号线之间的高容量电容器。第一信号线具有等于基本信号波长四分之一的奇整数倍的长度，加上或减去基波信号波长的十六分之一。

4. 发明申请

US20090237166A1 HIGH FREQUENCY POWER AMPLIFIER 有权
标题翻译：高频功率放大器
公开(公告)号：US20090237166A1
公开(公告)日：2009-09-24
申请号：US12147542
申请日：2008-06-27
申请人： Seiki Gotou , Akira Inoue , Ko Kanaya , Shinsuke Watanabe
发明人： Seiki Gotou , Akira Inoue , Ko Kanaya , Shinsuke Watanabe
IPC分类号： H03F3/191 , H03F3/68
CPC分类号： H03F3/604 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/19041 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H03F2200/237 , H03F2200/255 , H03F2200/423 , H03F2200/429 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.
摘要翻译：高频功率放大器包括：具有并联电连接的晶体管单元的多指晶体管; 连接到晶体管单元的栅电极的输入侧匹配电路; 以及分别连接在晶体管单元的栅电极和输入侧匹配电路之间的谐振电路。谐振电路以晶体管的工作频率的二次谐波或在具有工作频率的二次谐波的中心的预定频率范围内谐振，并且变为二次谐波处的高阻抗负载或开路负载。

5. 发明授权

US08728866B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08728866B2
公开(公告)日：2014-05-20
申请号：US13079055
申请日：2011-04-04
申请人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
发明人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
IPC分类号： H01L21/50 , H01L23/04
CPC分类号： H01L21/50 , H01L23/04 , H01L23/10 , H01L23/552 , H01L24/06 , H01L24/16 , H01L24/94 , H01L24/97 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/16235 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole.
摘要翻译：一种制造半导体器件的方法包括：在体晶片的第一主表面上形成电路图案和第一金属膜; 从主体晶片的第二主表面形成穿透体晶片的通孔并到达第一金属膜; 在体晶片的第二主表面的一部分上形成第二金属膜，在通孔的内壁上，以及暴露在通孔中的第一金属膜上; 在盖晶片的第一主表面上形成凹部; 在盖晶片的第一主表面上形成第三金属膜，包括在盖晶片的凹部内部; 其中所述凹部面向所述电路图案，并且所述第一金属膜与所述第三金属膜接触，将所述盖晶片接合到所述主体晶片; 并且沿着通孔对接合体晶片和盖晶片进行切割。

6. 发明申请

US20120025366A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120025366A1
公开(公告)日：2012-02-02
申请号：US13079055
申请日：2011-04-04
申请人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
发明人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
IPC分类号： H01L23/48 , H01L21/78
CPC分类号： H01L21/50 , H01L23/04 , H01L23/10 , H01L23/552 , H01L24/06 , H01L24/16 , H01L24/94 , H01L24/97 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/16235 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole.
摘要翻译：一种制造半导体器件的方法包括：在体晶片的第一主表面上形成电路图案和第一金属膜; 从主体晶片的第二主表面形成穿透体晶片的通孔并到达第一金属膜; 在体晶片的第二主表面的一部分上形成第二金属膜，在通孔的内壁上，以及暴露在通孔中的第一金属膜上; 在盖晶片的第一主表面上形成凹部; 在盖晶片的第一主表面上形成第三金属膜，包括在盖晶片的凹部内部; 其中所述凹部面向所述电路图案，并且所述第一金属膜与所述第三金属膜接触，将所述盖晶片接合到所述主体晶片; 并且沿着通孔对接合体晶片和盖晶片进行切割。

7. 发明授权

US07777571B2 High frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：US07777571B2
公开(公告)日：2010-08-17
申请号：US12147542
申请日：2008-06-27
申请人： Seiki Gotou , Akira Inoue , Ko Kanaya , Shinsuke Watanabe
发明人： Seiki Gotou , Akira Inoue , Ko Kanaya , Shinsuke Watanabe
IPC分类号： H03F3/191
CPC分类号： H03F3/604 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/19041 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H03F2200/237 , H03F2200/255 , H03F2200/423 , H03F2200/429 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.
摘要翻译：高频功率放大器包括：具有并联电连接的晶体管单元的多指晶体管; 连接到晶体管单元的栅极的输入侧匹配电路; 以及分别连接在晶体管单元的栅电极和输入侧匹配电路之间的谐振电路。谐振电路以晶体管的工作频率的二次谐波或在具有工作频率的二次谐波的中心的预定频率范围内谐振，并且变为二次谐波处的高阻抗负载或开路负载。

8. 发明授权

US07701296B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07701296B2
公开(公告)日：2010-04-20
申请号：US11874966
申请日：2007-10-19
申请人： Akira Inoue , Seiki Goto , Kou Kanaya , Shinsuke Watanabe
发明人： Akira Inoue , Seiki Goto , Kou Kanaya , Shinsuke Watanabe
IPC分类号： H03F3/04
CPC分类号： H03F1/523 , H03F3/195 , H03F3/211 , H03F2200/211 , H03F2200/366 , H03F2200/381
摘要： A current limiting circuit is connected to the gate (input terminal) of an amplifying transistor. The current limiting circuit includes a protecting transistor, a first protecting resistor connecting the drain to the gate of the protecting transistor, and a second protecting resistor connecting the source to the gate of the protecting transistor. The current limiting circuit limits current, so that electric power larger than the maximum electric power allowable for the amplifying transistor does not pass.
摘要翻译：限流电路连接到放大晶体管的栅极（输入端）。限流电路包括保护晶体管，将漏极连接到保护晶体管的栅极的第一保护电阻以及将源极连接到保护晶体管的栅极的第二保护电阻。电流限制电路限制电流，使得大于放大晶体管可允许的最大电功率的功率不通过。

9. 发明申请

US20080290951A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080290951A1
公开(公告)日：2008-11-27
申请号：US11874966
申请日：2007-10-19
申请人： Akira Inoue , Seiki Goto , Kou Kanaya , Shinsuke Watanabe
发明人： Akira Inoue , Seiki Goto , Kou Kanaya , Shinsuke Watanabe
IPC分类号： H02H7/20
CPC分类号： H03F1/523 , H03F3/195 , H03F3/211 , H03F2200/211 , H03F2200/366 , H03F2200/381
摘要： A current limiting circuit is connected to the gate (input terminal) of an amplifying transistor. The current limiting circuit includes a protecting transistor, a first protecting resistor connecting the drain to the gate of the protecting transistor, and a second protecting resistor connecting the source to the gate of the protecting transistor. The current limiting circuit limits current, so that electric power larger than the maximum electric power allowable for the amplifying transistor does not pass.
摘要翻译：限流电路连接到放大晶体管的栅极（输入端）。限流电路包括保护晶体管，将漏极连接到保护晶体管的栅极的第一保护电阻以及将源极连接到保护晶体管的栅极的第二保护电阻。电流限制电路限制电流，使得大于放大晶体管可允许的最大电功率的功率不通过。

10. 发明申请

US20090051448A1 SECOND HARMONIC OSCILLATOR 有权
标题翻译：第二和谐振荡器
公开(公告)号：US20090051448A1
公开(公告)日：2009-02-26
申请号：US12035724
申请日：2008-02-22
申请人： Shinsuke Watanabe , Akira Inoue
发明人： Shinsuke Watanabe , Akira Inoue
IPC分类号： H03B1/00
CPC分类号： H03B19/14
摘要： A second harmonic oscillator has a series positive feedback configuration, suppresses output of a fundamental signal, and outputs a second harmonic signal having a frequency in a range from 1 GHz to 200 GHz generated inside of a circuit. The second harmonic oscillator includes: a transistor having a base terminal, a first emitter terminal, a second emitter terminal, and a collector terminal; a resonator circuit connected to the base terminal; a first transmission line short-circuiting stub connected to one of the two emitter terminals; and a second transmission line short-circuiting stub connected to the other of the two emitter terminals and having a line length obtained by adding one-fourth of one wavelength of the fundamental signal to an integer multiple of one-half wavelength of the fundamental signal.
摘要翻译：二次谐波振荡器具有串联正反馈配置，抑制基本信号的输出，并且输出在电路内部产生的频率范围为1GHz至200GHz的二次谐波信号。二次谐波振荡器包括：具有基极端子，第一发射极端子，第二发射极端子和集电极端子的晶体管; 连接到基座的谐振器电路; 连接到两个发射极端子之一的第一传输线短路短路; 以及连接到两个发射极端子中的另一个的第二传输线短路短路，并且具有通过将基本信号的一个波长的四分之一相加到基本信号的二分之一波长的整数倍而获得的线路长度。

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