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1. 发明申请

US20110175686A1 HIGH FREQUENCY SECOND HARMONIC OSCILLATOR 审中-公开
标题翻译：高频二次谐波振荡器
公开(公告)号：US20110175686A1
公开(公告)日：2011-07-21
申请号：US12911764
申请日：2010-10-26
申请人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
发明人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
IPC分类号： H03B5/12
CPC分类号： H03B5/1847 , H03D2200/0086
摘要： A high frequency second harmonic oscillator includes a transistor, a first signal line connected at a first end to the base or gate of the transistor, a first shunt capacitor connected at a first end to a second end of the first signal line and at a second end to ground, a second signal line connected at a first end to the collector or drain of the transistor, a second shunt capacitor connected at a first end to a second end of the second signal line and at a second end to ground, and a high capacitance capacitor connected between the first signal line and the second signal line. The first signal line has a length equal to an odd integer multiple of one quarter of the wavelength of a fundamental signal, plus or minus one-sixteenth of the wavelength of the fundamental signal.
摘要翻译：高频二次谐波振荡器包括晶体管，在第一端连接到晶体管的基极或栅极的第一信号线，在第一端连接到第一信号线的第二端的第一并联电容器，在第一端连接到晶体管的集电极或漏极的第二信号线，在第一端连接到第二信号线的第二端并在第二端连接到地的第二并联电容器，以及连接在第一信号线和第二信号线之间的高容量电容器。第一信号线具有等于基本信号波长四分之一的奇整数倍的长度，加上或减去基波信号波长的十六分之一。

2. 发明授权

US09203357B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US09203357B2
公开(公告)日：2015-12-01
申请号：US13433410
申请日：2012-03-29
申请人： Shinichi Miwa , Yoshihiro Tsukahara , Ko Kanaya , Naoki Kosaka
发明人： Shinichi Miwa , Yoshihiro Tsukahara , Ko Kanaya , Naoki Kosaka
IPC分类号： H01L27/085 , H01L23/66 , H03F1/56 , H01L27/02 , H01L27/06 , H03F3/195 , H03F3/21 , H03F3/24 , H01L23/64 , H01L21/8252
CPC分类号： H03F1/56 , H01L21/8252 , H01L23/647 , H01L23/66 , H01L27/0207 , H01L27/0605 , H01L27/085 , H01L2223/6655 , H01L2224/48137 , H01L2224/49175 , H01L2924/00014 , H01L2924/1305 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2200/222 , H03F2200/387 , H03F2203/21106 , H03F2203/21142 , H01L2224/45099 , H01L2924/00
摘要： A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit.
摘要翻译：功率放大器包括：半导体衬底，包括晶体管单元，用于位于半导体衬底上的晶体管单元的漏极电极，位于半导体衬底上并连接到漏电极的漏极焊盘，位于半导体衬底中的离子注入电阻;以及沿着漏极焊盘延伸和接触，位于半导体衬底上并与离子注入电阻接触的浮动电极以及位于半导体衬底之外的输出匹配电路。功率放大器还包括将漏极焊盘连接到输出匹配电路的导线。

3. 发明申请

US20100052799A1 VOLTAGE CONTROLLED OSCILLATOR, MMIC, AND HIGH FREQUENCY WIRELESS DEVICE 审中-公开
标题翻译：电压控制振荡器，MMIC和高频无线设备
公开(公告)号：US20100052799A1
公开(公告)日：2010-03-04
申请号：US12473317
申请日：2009-05-28
申请人： Shinsuke Watanabe , Seiki Goto , Yoshihiro Tsukahara , Ko Kanaya
发明人： Shinsuke Watanabe , Seiki Goto , Yoshihiro Tsukahara , Ko Kanaya
IPC分类号： H03L7/00
CPC分类号： H03L7/099 , H03B5/1847
摘要： A voltage controlled oscillator having low phase noise and including: a variable resonator including a varactor and a control voltage terminal; and an open-end stub connected in parallel to the variable resonator, the open-end stub having a length shorter than or equal to an odd multiple of one quarter of a wavelength of a harmonic signal plus one sixteenth of the wavelength of the harmonic signal, and longer than or equal to an odd multiple of one quarter of the wavelength of the harmonic signal minus one sixteenth of the wavelength of the harmonic signal. In this structure, a high Q value is realized for a fundamental wave frequency. Fluctuation in a control voltage due to a harmonic signal is controlled.
摘要翻译：一种具有低相位噪声的压控振荡器，包括：包括变容二极管和控制电压端子的可变谐振器; 以及与可变谐振器并联连接的开路短截线，开路短截线长度短于或等于谐波信号的波长的四分之一加上谐波信号的波长的十六分之一的奇数倍并且长于或等于谐波信号的四分之一波长的奇数倍减去谐波信号的波长的十六分之一。在该结构中，对于基波频率实现高Q值。控制由于谐波信号引起的控制电压的波动。

4. 发明授权

US08728866B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08728866B2
公开(公告)日：2014-05-20
申请号：US13079055
申请日：2011-04-04
申请人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
发明人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
IPC分类号： H01L21/50 , H01L23/04
CPC分类号： H01L21/50 , H01L23/04 , H01L23/10 , H01L23/552 , H01L24/06 , H01L24/16 , H01L24/94 , H01L24/97 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/16235 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole.
摘要翻译：一种制造半导体器件的方法包括：在体晶片的第一主表面上形成电路图案和第一金属膜; 从主体晶片的第二主表面形成穿透体晶片的通孔并到达第一金属膜; 在体晶片的第二主表面的一部分上形成第二金属膜，在通孔的内壁上，以及暴露在通孔中的第一金属膜上; 在盖晶片的第一主表面上形成凹部; 在盖晶片的第一主表面上形成第三金属膜，包括在盖晶片的凹部内部; 其中所述凹部面向所述电路图案，并且所述第一金属膜与所述第三金属膜接触，将所述盖晶片接合到所述主体晶片; 并且沿着通孔对接合体晶片和盖晶片进行切割。

5. 发明申请

US20120025366A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120025366A1
公开(公告)日：2012-02-02
申请号：US13079055
申请日：2011-04-04
申请人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
发明人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
IPC分类号： H01L23/48 , H01L21/78
CPC分类号： H01L21/50 , H01L23/04 , H01L23/10 , H01L23/552 , H01L24/06 , H01L24/16 , H01L24/94 , H01L24/97 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/16235 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole.
摘要翻译：一种制造半导体器件的方法包括：在体晶片的第一主表面上形成电路图案和第一金属膜; 从主体晶片的第二主表面形成穿透体晶片的通孔并到达第一金属膜; 在体晶片的第二主表面的一部分上形成第二金属膜，在通孔的内壁上，以及暴露在通孔中的第一金属膜上; 在盖晶片的第一主表面上形成凹部; 在盖晶片的第一主表面上形成第三金属膜，包括在盖晶片的凹部内部; 其中所述凹部面向所述电路图案，并且所述第一金属膜与所述第三金属膜接触，将所述盖晶片接合到所述主体晶片; 并且沿着通孔对接合体晶片和盖晶片进行切割。

6. 发明授权

US08440538B2 Method of manufacturing airbridge 失效
标题翻译：制造航空桥的方法
公开(公告)号：US08440538B2
公开(公告)日：2013-05-14
申请号：US13089343
申请日：2011-04-19
申请人： Naoki Kosaka , Ko Kanaya , Yoshihiro Tsukahara
发明人： Naoki Kosaka , Ko Kanaya , Yoshihiro Tsukahara
IPC分类号： H01L21/311 , H01L21/76
CPC分类号： H01L23/4821 , H01L2924/0002 , H01L2924/00
摘要： In making an airbridge structure, a second resist layer is applied over a first resist layer. The resist layers are exposed and developed to have a predetermined width W2. A third resist layer is applied. The third resist layer is also exposed and developed to have a predetermined width W3. An airbridge-forming material layer is applied to the layer stack structure consisting of the first, second, and third resist layers, forming an airbridge. The resist layers are removed, completing the manufacture of the airbridge, which has a stepped cross section.
摘要翻译：在制造空中桥结构时，将第二抗蚀剂层施加在第一抗蚀剂层上。抗蚀剂层被曝光和显影以具有预定的宽度W2。应用第三抗蚀剂层。第三抗蚀剂层也被曝光和显影以具有预定宽度W3。将气桥形成材料层施加到由第一，第二和第三抗蚀剂层组成的层堆叠结构，形成空气桥。去除抗蚀剂层，完成具有阶梯状横截面的空中桥梁的制造。

7. 发明申请

US20120094481A1 METHOD OF MANUFACTURING AIRBRIDGE 失效
标题翻译：制造气囊的方法
公开(公告)号：US20120094481A1
公开(公告)日：2012-04-19
申请号：US13089343
申请日：2011-04-19
申请人： Naoki Kosaka , Ko Kanaya , Yoshihiro Tsukahara
发明人： Naoki Kosaka , Ko Kanaya , Yoshihiro Tsukahara
IPC分类号： H01L21/768
CPC分类号： H01L23/4821 , H01L2924/0002 , H01L2924/00
摘要： In making an airbridge structure, a second resist layer is applied over a first resist layer. The resist layers are exposed and developed to have a predetermined width W2. A third resist layer is applied. The third resist layer is also exposed and developed to have a predetermined width W3. An airbridge-forming material layer is applied to the layer stack structure consisting of the first, second, and third resist layers, forming an airbridge. The resist layers are removed, completing the manufacture of the airbridge, which has a stepped cross section.
摘要翻译：在制造空中桥结构时，将第二抗蚀剂层施加在第一抗蚀剂层上。抗蚀剂层被曝光和显影以具有预定的宽度W2。应用第三抗蚀剂层。第三抗蚀剂层也被曝光和显影以具有预定宽度W3。将气桥形成材料层施加到由第一，第二和第三抗蚀剂层组成的层堆叠结构，形成空气桥。去除抗蚀剂层，完成具有阶梯状横截面的空中桥梁的制造。

8. 发明申请

US20110234333A1 SEMICONDUCTOR SWITCH, TRANSCEIVER, TRANSMITTER, AND RECEIVER 有权
标题翻译：半导体开关，收发器，发射器和接收器
公开(公告)号：US20110234333A1
公开(公告)日：2011-09-29
申请号：US12917520
申请日：2010-11-02
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H01P1/10
CPC分类号： H03K17/002 , H03K17/693 , H04B1/48
摘要： A semiconductor switch includes a main line, branch lines branching from the main line at the same branch point, switching devices shunt-connected between one of the branch lines and ground and operated so that the one of the branch lines is connected to and disconnected from ground, a main terminal connected to an end of the main line, and branch terminals connected to an end of one of the branch lines. The impedance of one of the branch lines, as seen from the branch point, is conjugately matched to the combined impedance of the main line and the rest of the branch lines, as seen from the branch point, the one of the branch lines transmitting an RF signal, and the rest of the branch lines blocking the RF signal.
摘要翻译：半导体开关包括主线，在相同分支点处从主线分支的分支线，分支连接在一条分支线之间并接地并被操作的开关装置，使得一条支线连接到和断开接地，连接到主线的端部的主端子和连接到一条支线的端部的分支端子。从分支点看，分支线之一的阻抗与主线和其余分支线的组合阻抗共轭匹配，如从分支点所见，分支线中的一条发送 RF信号，其余的分支线阻挡RF信号。

9. 发明申请

US20100225376A1 SEMICONDUCTOR SWITCH, SEMICONDUCTOR SWITCH MMIC, CHANGEOVER SWITCH RF MODULE, POWER RESISTANCE SWITCH RF MODULE, AND TRANSMITTER AND RECEIVER MODULE 有权
标题翻译：半导体开关，半导体开关MMIC，更换开关RF模块，电源开关RF模块，发射器和接收器模块
公开(公告)号：US20100225376A1
公开(公告)日：2010-09-09
申请号：US12613557
申请日：2009-11-06
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H03K17/00
CPC分类号： H01P1/15
摘要： A semiconductor switch for switching a signal according to input power and maintaining performance of a receiver system with a simple configuration. The semiconductor switch comprises: a first FET connected between a first input/output terminal and a second input/output terminal; a first transmission line connected between the first input/output terminal and a third input/output terminal; a second transmission line parallel to the first transmission line; and a detector circuit connected to one end of the second transmission line, for outputting a DC voltage corresponding to power level of the high frequency signal, branched by the second transmission line. The first FET is controlled and switched according to an output from the detector circuit to switch between a route from the first input/output terminal to the second input/output terminal and a route from the first input/output terminal to the third input/output terminal.
摘要翻译：一种用于根据输入功率切换信号并且以简单配置维持接收机系统的性能的半导体开关。半导体开关包括：连接在第一输入/输出端子和第二输入/输出端子之间的第一FET; 连接在第一输入/输出端和第三输入/输出端之间的第一传输线; 平行于第一传输线的第二传输线; 以及检测器电路，其连接到所述第二传输线的一端，用于输出与由所述第二传输线分支的所述高频信号的功率电平相对应的DC电压。第一FET根据检测器电路的输出被控制和切换，以在从第一输入/输出端子到第二输入/输出端子的路径之间切换，以及从第一输入/输出端子到第三输入/输出的路线终奌站。

10. 发明授权

US06765454B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06765454B2
公开(公告)日：2004-07-20
申请号：US10270503
申请日：2002-10-16
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H01P110
CPC分类号： H01P1/15 , G01S7/034
摘要： A semiconductor device includes a switching element, for example, a Schottky barrier diode, which controls transmission/cutoff of a signal transmitted between two portions of a transmission line. An anode electrode of the switching element is interposed between the two portions of the transmission line and the longitudinal direction of the anode electrode is aligned with the longitudinal direction of the transmission line. A cathode electrode of the switching element is disposed on at least one of the widthwise sides of the anode electrode, and is connected to ground.
摘要翻译：半导体器件包括开关元件，例如肖特基势垒二极管，其控制在传输线的两个部分之间传输的信号的传输/切断。开关元件的阳极设置在传输线的两个部分之间，并且阳极电极的纵向方向与传输线的纵向对准。开关元件的阴极设置在阳极电极的宽度方向的至少一个上，并且与地连接。

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