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1. 发明授权

US07357839B2 SOI wafer and a method of producing the same 有权
标题翻译： SOI晶片及其制造方法
公开(公告)号：US07357839B2
公开(公告)日：2008-04-15
申请号：US10554960
申请日：2004-05-07
申请人： Kiyotaka Takano , Hitoshi Tsunoda
发明人： Kiyotaka Takano , Hitoshi Tsunoda
IPC分类号： C30B35/00 , C03C27/02
CPC分类号： H01L21/76251 , Y10S65/08 , Y10T117/10
摘要： The present invention provides an SOI wafer having at least an SOI layer, in which a plain orientation of the SOI layer is off-angled from {110} only in a direction to , and an off-angle is from 5 minutes to 2 degrees, and a method of producing an SOI wafer comprising at least bonding a base wafer and a bond wafer consisting of a silicon single crystal, and forming an SOI layer by thinning the bond wafer, wherein the bond wafer is used where a plain orientation thereof is off-angled from {110} only in a direction to , and an off-angle is from 5 minutes to 2 degrees. Thereby, there can be provided an SOI wafer having both high uniformity of film thickness and good micro-roughness to be suitable for fabricating high speed devices, and provided a method of producing the SOI wafer.
摘要翻译：本发明提供了至少具有SOI层的SOI晶片，其中SOI层的平坦取向仅在{110}仅在<100>的方向偏角，偏角为5分钟至以及制造SOI晶片的方法，所述SOI晶片至少包括接合由硅单晶构成的基底晶片和接合晶片，并且通过使所述接合晶片变薄来形成SOI层，其中所述接合晶片用于平坦取向其从{110}仅在<100>的方向偏角，偏角为5分钟至2度。由此，可以提供具有均匀性均匀的膜厚和良好的微粗糙度的SOI晶片，以适合于制造高速器件，并提供了制造SOI晶片的方法。

2. 发明申请

US20060246689A1 Soi wafer and process for producing the same 有权
标题翻译： Soi晶圆和生产过程相同
公开(公告)号：US20060246689A1
公开(公告)日：2006-11-02
申请号：US10554960
申请日：2004-05-07
申请人： Kiyotaka Takano , Hitoshi Tsunoda
发明人： Kiyotaka Takano , Hitoshi Tsunoda
IPC分类号： H01L21/30 , H01L21/46 , H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/76251 , Y10S65/08 , Y10T117/10
摘要： The present invention provides an SOI wafer having at least an SOI layer, in which a plain orientation of the SOI layer is off-angled from {110} only in a direction to , and an off-angle is from 5 minutes to 2 degrees, and a method of producing an SOI wafer comprising at least bonding a base wafer and a bond wafer consisting of a silicon single crystal, and forming an SOI layer by thinning the bond wafer, wherein the bond wafer is used where a plain orientation thereof is off-angled from {110} only in a direction to , and an off-angle is from 5 minutes to 2 degrees. Thereby, there can be provided an SOI wafer having both high uniformity of film thickness and good micro-roughness to be suitable for fabricating high speed devices, and provided a method of producing the SOI wafer.
摘要翻译：本发明提供了至少具有SOI层的SOI晶片，其中SOI层的平坦取向仅在{110}仅在<100>的方向偏角，偏角为5分钟至以及制造SOI晶片的方法，所述SOI晶片至少包括接合由硅单晶构成的基底晶片和接合晶片，并且通过使所述接合晶片变薄来形成SOI层，其中所述接合晶片用于平坦取向其从{110}仅在<100>的方向偏角，偏角为5分钟至2度。由此，可以提供具有均匀性均匀的膜厚和良好的微粗糙度的SOI晶片，以适合于制造高速器件，并提供了制造SOI晶片的方法。

3. 发明申请

US20050118789A1 Method of producing soi wafer and soi wafer 审中-公开
标题翻译：生产硅晶片和硅片的方法
公开(公告)号：US20050118789A1
公开(公告)日：2005-06-02
申请号：US10507175
申请日：2003-12-25
申请人： Hiroji Aga , Isao Yokokawa , Kiyotaka Takano , Kiyoshi Mitani
发明人： Hiroji Aga , Isao Yokokawa , Kiyotaka Takano , Kiyoshi Mitani
IPC分类号： H01L21/02 , H01L21/265 , H01L21/762 , H01L27/12 , H01L21/30 , H01L21/46
CPC分类号： H01L21/26533 , H01L21/76254
摘要： The present invention relates to a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by forming an oxide film on a surface of at least one of a bond wafer and a base wafer, bonding the bond wafer to the base wafer through the formed oxide film, and making the bond wafer into a thin film, wherein after the oxide film is formed so that a total thickness of the oxide film formed on the surface of at least one of the bond wafer and the base wafer is thicker than a thickness of the buried oxide film that the SOI wafer to be produced has, the bond wafer is bonded to the base wafer through the formed oxide film, the bond wafer is made into a thin film to form an SOI layer, and thereafter, an obtained bonded wafer is subjected to heat treatment to reduce a thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which blisters and voids are not generated even if the thickness of the buried oxide film is thinned, and its SOI layer has extremely good crystallinity.
摘要翻译：本发明涉及一种制造SOI晶片的方法，其中通过在接合晶片和基底晶片中的至少一个的表面上形成氧化膜，在掩埋氧化膜上形成SOI层，将接合晶片接合到通过形成的氧化膜的基底晶片，并将接合晶片制成薄膜，其中在形成氧化物膜之后，使得形成在至少一个接合晶片和基底的表面上的氧化膜的总厚度晶片比所制造的SOI晶片的埋入氧化膜的厚度厚，通过形成的氧化膜将接合晶片接合到基底晶片，将接合晶片制成薄膜以形成SOI层，然后，对获得的接合晶片进行热处理以减小掩埋氧化膜的厚度。因此，可以提供一种制造SOI晶片的方法，其中即使掩埋氧化膜的厚度变薄也不会产生起泡和空隙，并且其SOI层具有非常好的结晶度。

4. 发明授权

US5817171A Apparatus and method for producing single crystal using Czochralski technique 失效
标题翻译：使用Czochralski技术生产单晶的装置和方法
公开(公告)号：US5817171A
公开(公告)日：1998-10-06
申请号：US655810
申请日：1996-05-31
申请人： Masahiro Sakurada , Tomohiko Oota , Kiyotaka Takano , Masanori Kimura
发明人： Masahiro Sakurada , Tomohiko Oota , Kiyotaka Takano , Masanori Kimura
IPC分类号： C30B15/00 , C30B15/14 , C30B33/02
CPC分类号： C30B15/14 , Y10T117/10 , Y10T117/1068 , Y10T117/1088
摘要： A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal is controllable with ease and a good accuracy, which puller comprises a crucible containing raw material, heater for melting by heating the raw material and a heat insulating cylinder surrounding them, the heat insulating cylinder being cross-sectionally divided by an annular separation gap or gaps into parts and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller.
摘要翻译：使用Czochralski技术的拉伸器和晶体生长方法，其中温度分布和生长晶体的热条件的历史可以容易地和准确地控制，该拉拔器包括含有原料的坩埚，通过加热熔化的加热器原材料和围绕它们的隔热圆筒，隔热圆柱体被环形分隔间隙或间隙横截面分割成多个部分，并且该方法适用于诸如硅，锗，GaP，GaAs或单晶的生长 InP在拉拔器。使用切割器中的切克萨斯技术控制生长晶体的温度分布和热条件的历史的方法。

5. 发明授权

US09499924B2 Method for manufacturing silicon single crystal 有权
标题翻译：硅单晶的制造方法
公开(公告)号：US09499924B2
公开(公告)日：2016-11-22
申请号：US14236977
申请日：2012-08-02
申请人： Akihiro Kimura , Kiyotaka Takano , Junya Tokue
发明人： Akihiro Kimura , Kiyotaka Takano , Junya Tokue
IPC分类号： C30B15/10 , C30B15/22 , C30B15/00 , C30B29/06
CPC分类号： C30B15/22 , C30B15/00 , C30B15/10 , C30B29/06
摘要： There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.
摘要翻译：提供一种制造单晶硅的方法，该方法包括：将容纳在坩埚中的多晶硅熔化以获得硅熔体的原料熔化步骤; 并使晶种与硅熔体接触并拉出晶种以生长硅单晶，其中在原料熔化步骤之后和拉制步骤之前，进行：将硅熔体离开的方圆化步骤以规定的气体流量和规定的炉压进行坩埚的预定转数，以施加磁场而产生方英石; 以及通过进行坩埚转数增加，气体流量增加和炉压力下降中的任何一个部分溶解方英石的溶解步骤，超过了对立图中的曲线图。

6. 发明授权

US08268077B2 Upper heater, single crystal production apparatus, and method for producing single crystal 有权
标题翻译：上加热器，单晶制造装置和单晶的制造方法
公开(公告)号：US08268077B2
公开(公告)日：2012-09-18
申请号：US13128978
申请日：2009-10-08
申请人： Kiyotaka Takano
发明人： Kiyotaka Takano
IPC分类号： C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068
摘要： An upper heater for use in the production of a single crystal, the upper heater having electrodes to which a current is supplied and a heat generating section which generates heat by resistance heating are provided, the upper heater being used when a single crystal is produced by a Czochralski method, the upper heater being placed above a graphite heater which is placed so as to surround a crucible containing silicon melt, wherein the heat generating section is ring-shaped and is placed so as to surround the crucible, and has slits formed from the inside and the outside of the heat generating section in a horizontal direction. As a result, the upper heater controls a crystal defect of the single crystal efficiently and improves the oxygen concentration controllability.
摘要翻译：提供用于制造单晶的上加热器，具有供给电流的电极的上加热器和通过电阻加热产生热量的发热部，设置上加热器，当单晶由上加热器放置在石墨加热器的上方，该石墨加热器被放置成围绕包含硅熔体的坩埚，其中发热部分是环形的并且被放置成围绕坩埚，并且具有由发热部分的内部和外部在水平方向上。结果，上加热器有效地控制单晶的晶体缺陷，并提高氧浓度可控性。

7. 发明授权

US6120749A Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same 失效
标题翻译：晶圆周边部分没有晶体缺陷的硅单晶及其制造方法
公开(公告)号：US6120749A
公开(公告)日：2000-09-19
申请号：US101941
申请日：1998-07-17
申请人： Kiyotaka Takano , Makoto Iida , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Makoto Iida , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/22 , C30B15/00 , C30B29/06 , H01L21/02 , H01L21/208 , C31B33/00
CPC分类号： C30B29/06 , C30B15/00 , Y10S257/913
摘要： A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no crystal defects with regard to the dielectric breakdown strength of oxide film in its peripheral region which extends from the circumference and accounts for up to 50% of the total area, in particular which extends from the circumference to a circle 30 mm apart from the circumference. A process for producing a silicon single crystal for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency is provided. In this process, the silicon single crystal which is being grown by the Czochralski method is pulled at a rate which is 80 to 60% of the critical pull rate inherent in the pulling apparatus.
摘要翻译： PCT No.PCT / JP97 / 00090 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年1月17日PCT PCT。 WO97 / 26393 PCT出版物日期1997年7月24日提供直径为6英寸或更大并且提高了氧化膜的绝缘击穿强度的硅单晶晶片，特别是其周边部分，从而提高了每片晶片产生的器件芯片的产量。该晶片在其周边区域中的氧化膜的介电击穿强度方面没有晶体缺陷，其从圆周延伸并占总面积的50％，特别是从圆周延伸到相隔30mm的圆从圆周。提供了一种用于通过切克劳斯斯克方法生产硅单晶的方法，其提供了特别在其周边部分提高氧化膜的介电击穿强度的硅单晶晶片，而不会显着降低生产效率。在这个过程中，以切克劳斯基法生长的硅单晶以牵引装置固有的临界拉伸速率的80％至60％的速率被拉伸。

8. 发明授权

US5871583A Apparatus for producing silicon single crystal 失效
标题翻译：硅单晶制造装置
公开(公告)号：US5871583A
公开(公告)日：1999-02-16
申请号：US773351
申请日：1996-12-26
申请人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus for producing a silicon single crystal grown by the Czochralski method includes a main chamber having a round soulder interconnecting the upper end of a side wall and the lower end of a neck of the main chamber. The round shoulder has an inside surface so profiled as to form a portion of the periphery of an ellipse drawn about two foci which are composed of the upper end of a heater and a point of the longitudinal axis of a silicon single crystal being grown. The inside surface has a low emissivity. With the apparatus thus constructed, a silicon single crystal having a high dielectric breakdown strength of oxide film (SiO.sub.2) can be produced in a stable manner with high yield and productivity.
摘要翻译：用于生产通过切克劳斯基法生长的单晶硅的装置包括：主室，其具有将侧壁的上端和主室的颈部的下端相互连接的圆形的钢桶。圆形肩部具有内表面，所述内表面被成形为形成围绕两个焦点的椭圆的周边的一部分，该两个焦点由加热器的上端和生长的硅单晶的纵向轴线的点组成。内表面发射率低。利用如此构造的装置，可以以高产率和生产率以稳定的方式制造具有高的氧化膜（SiO 2）的介电击穿强度的硅单晶。

9. 发明授权

US5792255A Manufacturing method of single crystal 失效
标题翻译：单晶的制造方法
公开(公告)号：US5792255A
公开(公告)日：1998-08-11
申请号：US655201
申请日：1996-05-30
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译：在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是通过中心部分Cm或者低于该部分。与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

10. 发明授权

US5667584A Method for the preparation of a single crystal of silicon with decreased crystal defects 失效
标题翻译：制备晶体缺陷降低的硅单晶的方法
公开(公告)号：US5667584A
公开(公告)日：1997-09-16
申请号：US565100
申请日：1995-11-30
申请人： Kiyotaka Takano , Eiichi Iino , Masahiro Sakurada , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Eiichi Iino , Masahiro Sakurada , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B15/22 , C30B29/06 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032
摘要： An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangement of the cooling zone of the single crystal growing puller to have such a temperature distribution that the time taken by the growing single crystal to pass through the temperature range from the melting point of silicon to 1200.degree. C. is from 50 minutes to 200 minutes and the time taken by the growing single crystal to pass through the temperature range from 1200.degree. C. to 1000.degree. C. does not exceed 130 minutes.
摘要翻译：在Czochralski工艺中在半导体硅的单晶生长工艺中提出了一种改进，以获得在不影响生产率的情况下晶体缺陷数量大大降低的硅单晶。可以通过单晶生长拉拔器的冷却区的适当布置来实现改进，以具有这样的温度分布，使得生长的单晶经过从硅的熔点到1200℃的温度范围所花费的时间是从50分钟到200分钟，并且生长的单晶通过1200℃至1000℃的温度所花费的时间不超过130分钟。

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