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1. 发明授权

US5541871A Nonvolatile ferroelectric-semiconductor memory 失效
标题翻译：非易失性铁电半导体存储器
公开(公告)号：US5541871A
公开(公告)日：1996-07-30
申请号：US374246
申请日：1995-01-18
申请人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
发明人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
IPC分类号： G11C14/00 , G11C11/22 , G11C16/04 , G11C17/00 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L29/788 , H01L29/792 , G11C7/00
CPC分类号： G11C11/22
摘要： Nonvolatile memory with simple structure where recorded information can be read without destroy: Voltage is impressed to control gate CG and channel is grounded at writing operation. Ferroelectric layer 32 is polarized in accordance with whether the applied voltage is larger than threshold voltage of the memory device. Control gate voltage V.sub.CC to make channel is little when the ferro-electric layer 32 is polarized with control gate side being positive (polarized with second status). Control gate voltage V.sub.CG to make channel is large when the ferroelectric layer 32 is polarized with control gate side being negative (polarized with first status). The reference voltage V.sub.ref is impressed to the control gate CG at reading operation. Large drain current flows when the ferroelectric layer is polarized with second status and little drain current flows when the ferroelectric layer is polarized with first status. Recorded information can be read by detecting the drain current. By this reading operation, polarization status is not destroyed.
摘要翻译：具有简单结构的非易失性存储器，其中记录的信息可以被读取而不破坏：电压被施加到控制栅极CG，并且通道在写入操作时接地。铁电层32根据所施加的电压是否大于存储器件的阈值电压而极化。当铁电层32在控制栅极侧为正极化（极化具有第二状态）时，控制栅极电压VCC使沟道很小。当铁电层32被极化，控制栅极侧为负极化（第一状态极化）时，控制栅极电压VCG使沟道大。参考电压Vref在读取操作时被施加到控制栅极CG。当铁电层以第二状态极化时，大的漏极电流流动，当铁电层以第一状态极化时，漏极电流很小。通过检测漏极电流可以读取记录的信息。通过这种阅读操作，极化状态不会被破坏。

2. 发明授权

US5541873A Nonvolatile memory 失效
标题翻译：非易失性存储器
公开(公告)号：US5541873A
公开(公告)日：1996-07-30
申请号：US490816
申请日：1995-06-15
申请人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
发明人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
IPC分类号： G11C14/00 , G11C11/22 , G11C16/04 , G11C17/00 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L29/788 , H01L29/792
CPC分类号： G11C11/22
摘要： A nonvolatile memory having a simple structure where recorded information can be read nondestructively. A voltage is applied between a control gate and a memory gate for writing. A ferroelectric layer is polarized in accordance with the polarization of the applied voltage. A control gate voltage, necessary to form a channel, is small when the ferroelectric layer is polarized with the control gate side negative (polarized with second polarization). The control gate voltage V.sub.cg necessary to form a channel is large when the ferroelectric layer is polarized with the control gate side positive (polarized with first polarization). The reference voltage is applied to the control gate for reading. A large drain current flows when the ferroelectric layer is polarized with the second polarization and a small drain current flows when the ferroelectric layer is polarized with the first polarization. Recorded information can be read by detecting the drain current. The polzarization state of the ferroelectric layer is not affected by the reading operation.
摘要翻译：具有简单结构的非易失性存储器，其中记录信息可被非破坏性地读取。在控制栅极和写入存储器栅之间施加电压。铁电层根据施加的电压的极化而极化。当铁电层以控制栅极侧为负极化（以第二极化为极化）极化时，形成通道所需的控制栅极电压很小。当铁电层以控制栅极正极化（以第一极化为极化）极化时，形成沟道所需的控制栅极电压Vcg大。参考电压施加到控制门进行读取。当铁电层与第二极化极化时，大的漏极电流流动，而当铁电层以第一极化极化时，漏极电流流过较小。通过检测漏极电流可以读取记录的信息。铁电层的极化状态不受读取操作的影响。

3. 发明授权

US5633821A Nonvolatile memory device 失效
标题翻译：非易失性存储器件
公开(公告)号：US5633821A
公开(公告)日：1997-05-27
申请号：US374221
申请日：1995-01-18
申请人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
发明人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
IPC分类号： G11C14/00 , G11C11/22 , G11C16/04 , G11C17/00 , H01L21/8247 , H01L27/10 , H01L29/788 , H01L29/792 , H01L29/78
CPC分类号： G11C11/22 , G11C11/223
摘要： A nonvolatile memory with a simple structure where recorded information can be read without destruction. A voltage is impressed between a control gate and a memory gate for writing. A ferroelectric layer is polarized in accordance with the direction of the impressed voltage. A control gate voltage to make channel is small when the ferroelectric layer is polarized with the control gate side being positive. Control gate voltage to make channel is large when the ferroelectric layer is polarized with the control gate side being negative. The reference voltage is impressed on the control gate for reading. A large drain current flows when the ferroelectric layer is polarized with a second polarization and a small drain current flows when the ferroelectric layer is polarized with a first polarization. Record information can be read by detecting the drain current. Polarization status of the ferroelectric is not destroyed in the reading operation.
摘要翻译：具有简单结构的非易失性存储器，可以无损地读取记录信息。在控制门和用于写入的存储器门之间施加电压。铁电层根据外加电压的方向极化。当铁电层在控制栅极侧为正极极化时，使沟道的控制栅极电压较小。当铁电层在控制栅极侧为负极极化时，控制栅极电压使沟道大。参考电压施加在控制门上用于读取。当铁电层以第二偏振极化时，大的漏极电流流动，而当铁电层以第一偏振极化时，小的漏极电流流过。通过检测漏极电流可以读取记录信息。在阅读操作中铁电的极化状态不会被破坏。

4. 发明授权

US5592409A Nonvolatile memory 失效
标题翻译：非易失性存储器
公开(公告)号：US5592409A
公开(公告)日：1997-01-07
申请号：US374216
申请日：1995-01-18
申请人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
发明人： Kiyoshi Nishimura , Hideki Hayashi , Jun Muramoto , Takaaki Fuchikami , Hiromi Uenoyama
IPC分类号： G11C14/00 , G11C11/22 , G11C16/04 , G11C17/00 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L29/788 , H01L29/792
CPC分类号： G11C11/22 , G11C11/223
摘要： Nonvolatile memory with a simple structure where recorded information can be read without destruction: Voltage is impressed between control gate CG and memory gate MG at a writing operation. A ferroelectric layer 32 is polarized in accordance with the direction of the impressed voltage. The control gate voltage V.sub.CG to make a channel is low when the ferroelectric layer 32 is polarized with the control gate side being positive (polarized with second status). The control gate voltage V.sub.CG to make a channel is high when the ferroelectric layer 32 is polarized with the control gate side being negative (polarized with the first status). The reference voltage V.sub.ref is impressed to the control gate CG at the reading operation. A high drain current flows when the ferroelectric layer is polarized with the second status and low drain current flows when the ferroelectric layer is polarized with the first status. Recorded information can be read by detecting the drain current. With this reading operation, the polarization status is not destroyed.
摘要翻译：具有简单结构的非易失性存储器，其中记录的信息可以被读取而不会被破坏：在写入操作时在控制栅极CG和存储器门MG之间施加电压。铁电层32根据外加电压的方向极化。当铁电层32被极化而控制栅极侧为正极化（第二状态极化）时，使沟道的控制栅极电压VCG较低。当铁电层32在控制栅极侧为负极化（以第一状态极化）为极化时，使沟道的控制栅极电压VCG较高。参考电压Vref在读取操作时被施加到控制栅极CG。当铁电层以第二状态极化并且当铁电层以第一状态极化时，低漏极电流流动时，高漏极电流流动。通过检测漏极电流可以读取记录的信息。通过这种阅读操作，极化状态不会被破坏。

5. 外观设计

USD880362S1 Motor vehicle and/or toy replica thereof 有权
公开(公告)号：USD880362S1
公开(公告)日：2020-04-07
申请号：US29673986
申请日：2018-12-19
申请人： Hideki Hayashi , Masayuki Sugiura
设计人： Hideki Hayashi , Masayuki Sugiura
摘要： FIG. 1 is a left, front perspective view of a motor vehicle and/or toy replica showing our new design;
FIG. 2 is a left, rear perspective view thereof;
FIG. 3 is a right, front perspective view thereof;
FIG. 4 is a right, rear perspective view thereof;
FIG. 5 is a front view thereof;
FIG. 6 is a rear view thereof;
FIG. 7 is a left side view thereof;
FIG. 8 is a right side view thereof; and,
FIG. 9 is a top view thereof.

6. 发明申请

US20140219924A1 MEDICAL TISSUE-MARKER AND MANUFACTURING METHOD FOR THE SAME 有权
标题翻译：医用组织标记及其制造方法
公开(公告)号：US20140219924A1
公开(公告)日：2014-08-07
申请号：US14126034
申请日：2012-05-31
申请人： Hideki Hayashi , Hiroya Hatakeyama , Masanori Fujinami , Taro Toyota
发明人： Hideki Hayashi , Hiroya Hatakeyama , Masanori Fujinami , Taro Toyota
IPC分类号： A61K49/00 , A61K49/04
CPC分类号： A61K49/0034 , A61K49/0002 , A61K49/0023 , A61K49/006 , A61K49/0084 , A61K49/0438 , A61K49/0461 , A61K49/0466
摘要： The present invention is to provide a medical tissue-marker which enables the identification of a location even from the outside of an organ, can remain topical over a long period, and enables the easy identification of a marked location within the whole organ; also to provide a manufacturing method for the medical tissue-marker. The medical tissue-marker as in the present invention includes a vesicle formed by the synthesis of a phospholipid and a near infrared fluorescent dye, and an emulsion formed by the synthesis of the phospholipid and an X-ray contrast medium, and has agglomerated clusters wherein the vesicle and the emulsion are contained in a hydrophilic solvent and a plurality of capsules are formed by means of an emulsifier.
摘要翻译：本发明提供一种能够从器官外部识别位置的医疗组织标记物，能够长时间保持局部，能够容易地识别整个器官内的标记位置; 也提供了用于医疗组织标记物的制造方法。本发明中的医疗用组织标记物包括通过合成磷脂和近红外荧光染料形成的囊泡，以及通过合成磷脂和X射线造影剂形成的乳液，并且具有团聚体，其中，囊泡和乳液包含在亲水溶剂中，并且通过乳化剂形成多个胶囊。

7. 发明授权

US08766278B2 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US08766278B2
公开(公告)日：2014-07-01
申请号：US13565388
申请日：2012-08-02
申请人： Hideki Hayashi
发明人： Hideki Hayashi
IPC分类号： H01L29/15 , H01L21/8238
CPC分类号： H01L27/088 , H01L21/8213
摘要： First, second, fourth, and fifth impurity regions have a first conductivity type, and a third impurity region has a second conductivity type. The first to third impurity regions reach a first layer having the first conductivity type. The fourth and fifth impurity regions are provided on a second layer. First to fifth electrodes are provided on the first to fifth impurity regions, respectively. Electrical connection is established between the first and fifth electrodes, and between the third and fourth electrodes. A sixth electrode is provided on a gate insulating film covering a portion between the fourth and fifth impurity regions.
摘要翻译：第一，第二，第四和第五杂质区具有第一导电类型，第三杂质区具有第二导电类型。第一至第三杂质区域到达具有第一导电类型的第一层。第四和第五杂质区设置在第二层上。第一至第五电极分别设置在第一至第五杂质区上。在第一和第五电极之间以及第三和第四电极之间建立电连接。第六电极设置在覆盖第四和第五杂质区域之间的部分的栅极绝缘膜上。

8. 发明授权

US08618823B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08618823B2
公开(公告)日：2013-12-31
申请号：US13006325
申请日：2011-01-13
申请人： Kenichi Tada , Koki Tsutsumida , Masatoshi Kawashima , Hideki Hayashi , Tsutomu Sato , Koichi Sugimoto
发明人： Kenichi Tada , Koki Tsutsumida , Masatoshi Kawashima , Hideki Hayashi , Tsutomu Sato , Koichi Sugimoto
IPC分类号： G01R31/28
CPC分类号： G01R31/318594 , G01R31/318552
摘要： A semiconductor device is designed to facilitate analyzing a position and a cause of the failure of an integrated circuit adopting a polyphase clock. To this end, the semiconductor device is provided with an error detecting unit that detects that a problem of the operation occurs in the integrated circuit, a clock state holding unit that holds the information of phases in a predetermined term of a two- or more-phase clock and an output unit that outputs the information of the phases in the predetermined term of the two- or more-phase clock when the error detecting unit detects that the problem of the operation occurs in the integrated circuit.
摘要翻译：半导体器件被设计为便于分析采用多相时钟的集成电路的故障的位置和原因。为此，半导体器件设置有检测在集成电路中发生操作问题的错误检测单元，时钟状态保持单元，其保持预定项中的相位信息为两维或多次，相位时钟和输出单元，当错误检测单元检测到集成电路中发生操作的问题时，输出两相或更多相位时钟的预定项中的相位的信息。

9. 外观设计

USD693497S1 Combination lamp for an automobile 有权
公开(公告)号：USD693497S1
公开(公告)日：2013-11-12
申请号：US29429216
申请日：2012-08-08
申请人： Hideki Hayashi
设计人： Hideki Hayashi

10. 发明授权

US08424839B2 Direct-current motor control device and method for detecting state of direct-current motor 失效
标题翻译：直流马达控制装置及直流马达状态检测方法
公开(公告)号：US08424839B2
公开(公告)日：2013-04-23
申请号：US13020207
申请日：2011-02-03
申请人： Hideki Hayashi , Satoru Hiramoto
发明人： Hideki Hayashi , Satoru Hiramoto
IPC分类号： F16K31/02
CPC分类号： H02K23/66 , F02D41/005 , H02P7/03 , Y02T10/47
摘要： A current detection unit detects an electric current caused by superimposing a direct current from a direct-current power source on an alternating current from an alternating-current power source and supplied through a brush to a direct-current motor. An extracting unit extracts an alternating-current component of the detected electric current. An angle detection unit detects a rotation angle of the motor according to the extracted alternating-current component. A direction detection unit detects a rotative direction of the motor according to a change pattern of the extracted alternating-current component. A core of the motor has slots each defined between adjacent two of teeth. The slots respectively accommodate phase coils respectively wound around the teeth. Turns of the phase coils are different from each other.
摘要翻译：电流检测单元通过将来自直流电源的直流电叠加到来自交流电源的交流电并通过电刷提供给直流电动机而引起的电流。提取单元提取检测到的电流的交流分量。角度检测单元根据所提取的交流分量检测电动机的旋转角度。方向检测单元根据所提取的交流分量的变化模式来检测电动机的旋转方向。电动机的铁芯在相邻的两个齿之间具有槽。这些槽分别容纳分别缠绕在齿上的相位线圈。相位线圈的转数彼此不同。

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