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    • 10. 发明申请
    • Thin-film transistor, method of producing thin-film transistor, electronic circuit, display, and electronic device
    • 薄膜晶体管,薄膜晶体管的制造方法,电子电路,显示器和电子器件
    • US20070099333A1
    • 2007-05-03
    • US11589217
    • 2006-10-30
    • Soichi Moriya
    • Soichi Moriya
    • H01L21/00
    • H01L51/0533G02F1/1368H01L21/31608H01L51/0012H01L51/0036H01L51/0037H01L51/0039H01L51/0043H01L51/0516H01L51/0545
    • Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.
    • 本发明的方面可以提供具有良好的晶体管特性并且可以以低驱动电压工作的薄膜晶体管,制造这种薄膜晶体管的方法,高可靠性电子电路,显示器和电子器件。 在根据本发明的示例性薄膜晶体管中,可以通过下层在基板上形成栅极电极,并且可以在基板上形成栅极绝缘层,使得栅极电极被栅极绝缘层覆盖。 源电极和漏电极形成在栅极绝缘层上,使得它们通过形成在栅电极正上方的间隙彼此分离。 可以在其上形成有机半导体层,使得电极被有机半导体层覆盖。 有机半导体层的电极之间的区域用作沟道区域。 可以在有机半导体层上设置保护层。 该薄膜晶体管的特征在于,在形成栅极绝缘层之后形成有机半导体层,并且栅极绝缘层具有使有机半导体层对准的能力。