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1. 发明授权

US07959731B2 Method for producing semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US07959731B2
公开(公告)日：2011-06-14
申请号：US11665977
申请日：2005-11-02
申请人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
IPC分类号： C30B25/22
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L21/76254 , Y10S117/915
摘要： A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0
摘要翻译：一种制造半导体晶片的方法，包括在硅单晶晶片的表面上外延生长Si1-XGeX层（0

2. 发明授权

US07608548B2 Method for cleaning a multilayer substrate and method for bonding substrates and method for producing a bonded wafer 有权
标题翻译：多层基板的清洗方法及基板的接合方法以及接合晶片的制造方法
公开(公告)号：US07608548B2
公开(公告)日：2009-10-27
申请号：US10570949
申请日：2004-09-07
申请人： Isao Yokokawa , Kiyoshi Mitani
发明人： Isao Yokokawa , Kiyoshi Mitani
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , H01L21/76254
摘要： Disclosed is a method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, where the SiGe layer is an outermost surface of the SiGe layer and then cleaning the multilayer substrate with a first cleaning liquid capable of etching the protective film so that the protective film remains. The protective film prevents roughening of the surface of the SiGe layer while the cleaning is performed. The cleaning is performed. The cleaning is performed so that a thickness of the remaining protective film is from 1 nm to 100 nm.
摘要翻译：公开了一种用于清洁至少具有硅单晶晶片的多层衬底的方法，所述硅单晶晶片在硅单晶晶片的表面上外延生长SiGe层，其中SiGe层是SiGe层的最外表面，然后清洗多层基板，其具有能够蚀刻保护膜的第一清洁液体，使得保护膜保留。在执行清洁时，保护膜防止SiGe层的表面的粗糙化。进行清洁。执行清洁，使得剩余保护膜的厚度为1nm至100nm。

3. 发明授权

US07550309B2 Method for producing semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US07550309B2
公开(公告)日：2009-06-23
申请号：US11662594
申请日：2005-09-16
申请人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
发明人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
IPC分类号： H01L21/00
CPC分类号： C30B33/06 , C30B29/30 , C30B29/32 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02694
摘要： The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a Si1-XGeX layer (0
摘要翻译：本发明是一种制造半导体晶片的方法，至少包括以下步骤：在SOI晶片上外延生长Si1-XGeX层（0

4. 发明申请

US20080138959A1 Method For Producing Semiconductor Wafer 有权
标题翻译：生产半导体晶圆的方法
公开(公告)号：US20080138959A1
公开(公告)日：2008-06-12
申请号：US11665977
申请日：2005-11-02
申请人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
IPC分类号： H01L21/46
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L21/76254 , Y10S117/915
摘要： The present invention is a method for producing a semiconductor wafer, comprising: at least epitaxially growing a Si1-XGeX layer (0
摘要翻译：本发明是一种用于制造半导体晶片的方法，其包括：至少外延生长Si 1-X 1 Ge x X 1层（0

5. 发明申请

US20060099791A1 Bonded wafer and method of producing bonded wafer 有权
公开(公告)号：US20060099791A1
公开(公告)日：2006-05-11
申请号：US11300503
申请日：2005-12-15
申请人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
发明人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
IPC分类号： H01L21/44
CPC分类号： H01L21/2007 , H01L21/76254 , H01L29/045
摘要： The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.

6. 发明授权

US06306730B2 Method of fabricating an SOI wafer and SOI wafer fabricated by the method 有权
标题翻译：通过该方法制造SOI晶片和SOI晶片的方法
公开(公告)号：US06306730B2
公开(公告)日：2001-10-23
申请号：US09834435
申请日：2001-04-13
申请人： Kiyoshi Mitani , Isao Yokokawa
发明人： Kiyoshi Mitani , Isao Yokokawa
IPC分类号： H01L2130
CPC分类号： H01L21/76254 , H01L21/76251 , Y10S438/977
摘要： There is disclosed a method of fabricating an SOI wafer in which a bond wafer to form a SOI layer and a base wafer to be a supporting substrate are prepared; an oxide film is formed on at least the bond wafer; hydrogen ions or rare gas ions are implanted in the bond wafer via the oxide film in order to form a fine bubble layer (enclosed layer) within the bond wafer; the ion-implanted surface is brought into close contact with the surface of the base wafer; and then heat treatment is performed to separate a thin film from the bond wafer with using the fine bubble layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and wherein deviation in the thickness of the oxide film formed on the bond wafer is controlled to be smaller than the deviation in the ion implantation depth, and the SOI wafer fabricated thereby. There is provided an SOI wafer which has an SOI layer having improved thickness uniformity.
摘要翻译：公开了制造SOI晶片的方法，其中制备用于形成SOI层的接合晶片和作为支撑衬底的基底晶片; 至少在所述接合晶片上形成氧化膜; 通过氧化膜将氢离子或稀有气体离子注入到接合晶片中，以在接合晶片内形成微小的气泡层（封闭层）; 离子注入表面与基底晶片的表面紧密接触; 然后利用微细气泡层作为分层平面进行热处理以将薄膜与接合晶片分离，制造具有SOI层的SOI晶片; 并且其中形成在接合晶片上的氧化膜的厚度的偏差被控制为小于离子注入深度的偏差，以及由此制造的SOI晶片。提供了具有改善的厚度均匀性的SOI层的SOI晶片。

7. 发明申请

US20060051945A1 Method for manufacturing soi wafer and soi wafer 有权
标题翻译：制造硅晶片和硅晶片的方法
公开(公告)号：US20060051945A1
公开(公告)日：2006-03-09
申请号：US10544374
申请日：2004-02-13
申请人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
IPC分类号： H01L21/425 , H01L21/22
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.
摘要翻译：本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度电影。因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高质量SOI晶片和结晶度和表面质量非常好的SOI层可以使用SIMOX法生产。

8. 发明申请

US20050014346A1 Production method for soi wafer 失效
标题翻译：硅晶片的生产方法
公开(公告)号：US20050014346A1
公开(公告)日：2005-01-20
申请号：US10495988
申请日：2002-10-31
申请人： Kiyoshi Mitani , Isao Yokokawa
发明人： Kiyoshi Mitani , Isao Yokokawa
IPC分类号： H01L21/30 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254
摘要： After completion of annealing for bonding of the base wafer 1 and bond wafer 2, the bond wafer 2 is thinned to a first thickness suitable for ion implantation, and boron is ion-implanted to thereby form a high-boron-concentration layer 10. A second thinning step based on selective etching is then carried out while using the high-boron-concentration layer 10 as an etch stop layer. This is successful in providing a method of fabricating an SOI wafer which is suppressed both in intra-wafer uniformity of the firm thickness and in inter-wafer uniformity of the film thickness even when a required level for the thickness of the SOI layer is extremely small.
摘要翻译：在完成基底晶片1和接合晶片2的接合退火完成之后，将接合晶片2减薄到适于离子注入的第一厚度，并且离子注入硼，从而形成高硼浓度层10. 然后在使用高硼浓度层10作为蚀刻停止层的同时进行基于选择性蚀刻的第二稀化步骤。这成功地提供了制造SOI晶片的方法，其即使当SOI层的厚度的所需水平非常小时也抑制了厚度的晶片内均匀性和膜厚度的晶片间均匀性。

9. 发明授权

US06284629B1 Method of fabricating an SOI wafer and SOI wafer fabricated by the method 有权
标题翻译：通过该方法制造SOI晶片和SOI晶片的方法
公开(公告)号：US06284629B1
公开(公告)日：2001-09-04
申请号：US09343074
申请日：1999-06-29
申请人： Isao Yokokawa , Naoto Tate , Kiyoshi Mitani
发明人： Isao Yokokawa , Naoto Tate , Kiyoshi Mitani
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/76254 , Y10S156/942 , Y10S438/977 , Y10T156/1978
摘要： There is disclosed a method of fabricating an SOI wafer wherein an oxide film is formed on at least one of two single crystal silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form an ion implanted layer; the ion-implanted surface is brought into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed to separate a thin film from the silicon wafer with using the ion implanted layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and then an epitaxial layer is grown on the SOI layer to form a thick SOI layer. There is provided an SOI wafer which has a thick SOI layer with good thickness uniformity and good crystallinity and which is useful for a bipolar device or a power device.
摘要翻译：公开了一种制造SOI晶片的方法，其中氧化膜形成在两个单晶硅晶片中的至少一个上; 为了形成离子注入层，将氢离子或稀有气体离子注入到两个硅晶片之一的上表面中; 离子注入表面通过氧化膜与另一硅晶片的表面紧密接触; 使用离子注入层作为分层平面进行热处理以从硅晶片分离薄膜，以制造具有SOI层的SOI晶片; 然后在SOI层上生长外延层以形成厚的SOI层。提供了SOI晶片，该SOI晶片具有厚的均匀性和良好的结晶度的厚的SOI层，并且可用于双极器件或功率器件。

10. 发明授权

US06245645B1 Method of fabricating an SOI wafer 有权
标题翻译：制造SOI晶片的方法
公开(公告)号：US06245645B1
公开(公告)日：2001-06-12
申请号：US09346576
申请日：1999-07-01
申请人： Kiyoshi Mitani , Isao Yokokawa
发明人： Kiyoshi Mitani , Isao Yokokawa
IPC分类号： H01L2146
CPC分类号： H01L21/76254 , H01L21/76251 , Y10S438/977
摘要： There is disclosed a method of fabricating an SOI wafer in which a bond wafer to form a SOI layer and a base wafer to be a supporting substrate are prepared; an oxide film is formed on at least the bond wafer; hydrogen ions or rare gas ions are implanted in the bond wafer via the oxide film in order to form a fine bubble layer (enclosed layer) within the bond wafer; the ion-implanted surface is brought into close contact with the surface of the base wafer; and then heat treatment is performed to separate a thin film from the bond wafer using the fine bubble layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and wherein deviation in the thickness of the oxide film formed on the bond wafer is controlled to be smaller than the deviation in the ion implantation depth, and the SOI wafer fabricated thereby. There is provided an SOI wafer which has an SOI layer having improved thickness uniformity.
摘要翻译：公开了制造SOI晶片的方法，其中制备用于形成SOI层的接合晶片和作为支撑衬底的基底晶片; 至少在所述接合晶片上形成氧化膜; 通过氧化膜将氢离子或稀有气体离子注入到接合晶片中，以在接合晶片内形成微小的气泡层（封闭层）; 离子注入表面与基底晶片的表面紧密接触; 然后进行热处理，使用微细气泡层作为分层面从接合晶片分离薄膜，制造具有SOI层的SOI晶片; 并且其中形成在接合晶片上的氧化膜的厚度的偏差被控制为小于离子注入深度的偏差，以及由此制造的SOI晶片。提供了具有改善的厚度均匀性的SOI层的SOI晶片。

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