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1. 发明授权

US06541406B1 Silicon nitride sintered material and process for production thereof 有权
公开(公告)号：US06541406B1
公开(公告)日：2003-04-01
申请号：US09680137
申请日：2000-10-04
申请人： Kiyoshi Araki , Tsuneaki Ohashi , Katsuhiro Inoue , Masaaki Masuda
发明人： Kiyoshi Araki , Tsuneaki Ohashi , Katsuhiro Inoue , Masaaki Masuda
IPC分类号： C04B35587
CPC分类号： C04B35/584 , C04B35/5935 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3826 , C04B2235/3839 , C04B2235/3878 , C04B2235/3882 , C04B2235/3895 , C04B2235/5445 , C04B2235/604 , C04B2235/668 , C04B2235/766 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607
摘要： A silicon nitride sintered material includes a polycrystal material having silicon nitride crystal grains and a grain boundary phase. The sintered material contains a Yb element in an amount of 2 to 30% by weight in terms of its oxide and an Al element in an amount of 1 to 20% by weight in terms of its oxide and has a thermal conductivity of 40 W/mK or less at room temperature, a resistivity of 1×105 to 1×1012 &OHgr;·cm at room temperature, and a porosity of 0.5% or less.

2. 发明授权

US06667264B2 Silicon nitride sintered material and process for production thereof 有权
标题翻译：氮化硅烧结材料及其制造方法
公开(公告)号：US06667264B2
公开(公告)日：2003-12-23
申请号：US10326957
申请日：2002-12-20
申请人： Kiyoshi Araki , Tsuneaki Ohashi , Katsuhiro Inoue , Masaaki Masuda
发明人： Kiyoshi Araki , Tsuneaki Ohashi , Katsuhiro Inoue , Masaaki Masuda
IPC分类号： C04B35587
CPC分类号： C04B35/584 , C04B35/5935 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3826 , C04B2235/3839 , C04B2235/3878 , C04B2235/3882 , C04B2235/3895 , C04B2235/5445 , C04B2235/604 , C04B2235/668 , C04B2235/766 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607
摘要： A silicon nitride sintered material includes a polycrystal material having silicon nitride crystal grains and a grain boundary phase. The sintered material contains a Yb element in an amount of 2 to 30% by weight in terms of its oxide and an Al element in an amount of 1 to 20% by weight in terms of its oxide and has a thermal conductivity of 40 W/mK or less at room temperature, a resistivity of 1×105to 1×1012 &OHgr;·cm at room temperature, and a porosity of 0.5% or less.
摘要翻译：氮化硅烧结体包括具有氮化硅晶粒和晶界相的多晶材料。该烧结体的氧化物含有2〜30重量％的Yb元素，以氧化物换算为1〜20重量％的Al元素，导热系数为40W / mK以下，室温下的电阻率为1×10 5〜1×10 12Ω·cm，孔隙率为0.5％以下。

3. 发明授权

US6139983A Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same 失效
标题翻译：耐腐蚀构件，晶片支撑构件及其制造方法
公开(公告)号：US6139983A
公开(公告)日：2000-10-31
申请号：US102582
申请日：1998-06-23
申请人： Tsuneaki Ohashi , Kiyoshi Araki , Sadanori Shimura , Yuji Katsuda
发明人： Tsuneaki Ohashi , Kiyoshi Araki , Sadanori Shimura , Yuji Katsuda
IPC分类号： C04B41/87 , C04B41/50 , C04B41/52 , C04B41/85 , C04B41/89 , C23C8/36 , C23C16/458 , H01L21/205 , H01L21/302 , H01L21/3065 , C04B41/00
CPC分类号： C04B41/009 , C04B41/5018 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/458 , Y10S206/832 , Y10S428/901 , Y10T428/265
摘要： This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.
摘要翻译：本发明涉及一种具有耐卤素腐蚀性气体的等离子体的耐腐蚀构件，该耐腐蚀构件包括主体和形成在主体表面上并含有选自至少一种元素的氟化物的耐腐蚀层由稀土元素和碱土元素组成。

4. 发明授权

US5998321A Aluminum nitride sintered body, electronic functional material, and electrostatic chuck 有权
标题翻译：氮化铝烧结体，电子功能材料和静电吸盘
公开(公告)号：US5998321A
公开(公告)日：1999-12-07
申请号：US152296
申请日：1998-09-14
申请人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
发明人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
IPC分类号： C04B35/581 , H01L21/683
CPC分类号： H01L21/6833 , C04B35/581 , Y10T279/23
摘要： This invention relates to an aluminum nitride sintered body comprising aluminum nitride crystal grains, in which the grains have a given content of a rare earth element (a conversion content as an oxide thereof), a given average grain size, and a given spin amount per unit mg of aluminum obtained from a spectrum as measured by an electron spin resonance method. The aluminum nitride sintered body is used in an electronic functional material and an electrostatic chuck.
摘要翻译：本发明涉及包含氮化铝晶粒的氮化铝烧结体，其中颗粒具有给定含量的稀土元素（其转化率为其氧化物），给定的平均晶粒尺寸和给定的自旋量从通过电子自旋共振法测定的光谱获得的单位mg的铝。氮化铝烧结体用于电子功能材料和静电吸盘。

5. 发明授权

US06632549B1 Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same 有权
标题翻译：耐腐蚀构件，晶片支撑构件及其制造方法
公开(公告)号：US06632549B1
公开(公告)日：2003-10-14
申请号：US09618135
申请日：2000-07-17
申请人： Tsuneaki Ohashi , Kiyoshi Araki , Sadanori Shimura , Yuji Katsuda
发明人： Tsuneaki Ohashi , Kiyoshi Araki , Sadanori Shimura , Yuji Katsuda
IPC分类号： B32B900
CPC分类号： C04B41/009 , C04B41/5018 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/458 , Y10S206/832 , Y10S428/901 , Y10T428/265 , C04B41/0072 , C04B41/4533 , C04B41/4556 , C04B41/4529 , C04B41/5032 , C04B41/4558 , C04B35/10 , C04B35/14 , C04B35/565 , C04B35/584 , C04B35/581 , C04B35/563
摘要： This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.
摘要翻译：本发明涉及一种具有耐卤素腐蚀性气体的等离子体的耐腐蚀构件，该耐腐蚀构件包括主体和形成在主体表面上并含有选自至少一种元素的氟化物的耐腐蚀层来自由稀土元素和碱土元素组成的组

6. 发明授权

US06239402B1 Aluminum nitride-based sintered bodies, corrosion-resistant members, metal-buried articles and semiconductor-holding apparatuses 有权
标题翻译：氮化铝系烧结体，耐腐蚀构件，金属埋层物品和半导体保持装置
公开(公告)号：US06239402B1
公开(公告)日：2001-05-29
申请号：US09357825
申请日：1999-07-21
申请人： Kiyoshi Araki , Yuji Katsuda , Sadanori Shimura , Tsuneaki Ohashi
发明人： Kiyoshi Araki , Yuji Katsuda , Sadanori Shimura , Tsuneaki Ohashi
IPC分类号： B23K1000
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H01L2924/00
摘要： An aluminum nitride-based sintered body is disclosed, which includes aluminum nitride as a main ingredient and magnesium and has a polycrystalline structure composed of aluminum nitride crystals.
摘要翻译：公开了一种氮化铝系烧结体，其包括氮化铝作为主要成分，并具有由氮化铝晶体构成的多晶结构。

7. 发明授权

US06204489B1 Electrically heated substrate with multiple ceramic parts each having different volume restivities 有权
标题翻译：具有多个陶瓷部件的电加热衬底，每个陶瓷部件具有不同的体积恢复性
公开(公告)号：US06204489B1
公开(公告)日：2001-03-20
申请号：US09218701
申请日：1998-12-22
申请人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
发明人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
IPC分类号： H01L21205
CPC分类号： H05B3/748 , H05B3/283 , H05B3/74 , Y10T29/49083
摘要： A heater including a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part. The substrate includes a first ceramic material and the resistance control part includes a second ceramic material which has higher volume resistivity than that of the first ceramic material.
摘要翻译：一种加热器，包括具有用于处理基板上待加热物质的加热面的基板，嵌入基板的加热元件和电阻控制部。基板包括第一陶瓷材料，并且电阻控制部分包括具有比第一陶瓷材料的体积电阻率更高的体积电阻率的第二陶瓷材料。

8. 发明授权

US06294771B2 Electrically heated substrate with multiple ceramic parts each having different volume resitivities 有权
标题翻译：具有多个陶瓷部件的电加热衬底，每个陶瓷部件具有不同的体积电阻率
公开(公告)号：US06294771B2
公开(公告)日：2001-09-25
申请号：US09753481
申请日：2001-01-03
申请人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
发明人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
IPC分类号： H01L21205
CPC分类号： H05B3/748 , H05B3/283 , H05B3/74 , Y10T29/49083
摘要： A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.
摘要翻译：一种加热器，包括具有用于处理在基板上被加热物质的加热面的基板，嵌入基板的加热元件和电阻控制部，其中，所述基板包括第一陶瓷材料，所述电阻控制部包括第二具有比第一陶瓷体积电阻率高的陶瓷材料。

9. 发明授权

US6156686A Porous composite ceramic sintered bodies and a production process thereof 失效
标题翻译：多孔复合陶瓷烧结体及其制造方法
公开(公告)号：US6156686A
公开(公告)日：2000-12-05
申请号：US206509
申请日：1998-12-07
申请人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
发明人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
IPC分类号： C04B35/581 , C04B35/58 , C04B38/00 , C04B41/80 , H05K1/03
CPC分类号： C04B38/0074 , C04B38/00 , C04B2111/00844 , H05K1/0306
摘要： A porous composite ceramic sintered body includes an aluminum nitride phase and an aluminum oxynitride phase.
摘要翻译：多孔复合陶瓷烧结体包括氮化铝相和氮氧化铝相。

10. 发明授权

US6051303A Semiconductor supporting device 失效
标题翻译：半导体支持装置
公开(公告)号：US6051303A
公开(公告)日：2000-04-18
申请号：US122894
申请日：1998-07-28
申请人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
发明人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
IPC分类号： B23Q3/15 , C04B35/581 , G03F7/20 , H01L21/683 , H02N13/00 , B32B3/24 , B32B9/00
CPC分类号： G03F7/70691 , H01L21/6831 , Y10T279/23 , Y10T428/24322 , Y10T428/24331 , Y10T428/24339 , Y10T428/24347
摘要： A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.Orientation degree=[I'(002)/I'(100)]/[I(002)/I(100)]in which in an X-ray diffraction measurement, I'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.
摘要翻译：一种半导体支撑装置，包括由氮化铝基陶瓷材料制成并具有半导体放置表面的衬底，其中由下式确定的氮化铝基陶瓷材料的取向度不小于1.1，而不是更大在其中在X射线衍射测量中，I'（002）是衍射强度（I）（002）/ I'（100）] / [I（002）/ I（100）当从半导体放置表面照射X射线时，氮化铝基陶瓷材料的（002）面的I'（100）是氮化铝基陶瓷材料的（100）面的衍射强度当从半导体放置面照射X射线时，I（002）是根据JCPDS卡号25-1133的氮化铝陶瓷的（002）面的衍射强度，I（100）是根据JCPDS卡号25-1133的氮化铝陶瓷的（100）面的衍射强度。

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