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1. 发明授权

US09511993B2 Semiconductor physical quantity detecting sensor 有权
标题翻译：半导体物理量检测传感器
公开(公告)号：US09511993B2
公开(公告)日：2016-12-06
申请号：US13983775
申请日：2012-01-18
申请人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
发明人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
IPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P15/08
CPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P2015/0822
摘要： A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.
摘要翻译：半导体物理量检测传感器包括（1）由可动电极形成的第一静电电容和形成在与可动电极共用的第一导电层中的第一固定电极，（2）由可动电极形成的第二静电电容电极和形成在与可动电极的基板表面不同高度的第二导电层中的第二固定电极，以及（3）基于第一和第二静电的变化来计算物理量的运算电路当施加物理量时产生的电容。在该结构中，来自第一静电电容的电信号和来自第二静电电容的电信号被输入到运算电路。

2. 发明申请

US20130346015A1 Semiconductor Physical Quantity Detecting Sensor 有权
标题翻译：半导体物理量检测传感器
公开(公告)号：US20130346015A1
公开(公告)日：2013-12-26
申请号：US13983775
申请日：2012-01-18
申请人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
发明人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
IPC分类号： B81B7/02
CPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P2015/0822
摘要： A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.
摘要翻译：半导体物理量检测传感器包括（1）由可动电极形成的第一静电电容和形成在与可动电极共用的第一导电层中的第一固定电极，（2）由可动电极形成的第二静电电容电极和形成在与可动电极的基板表面不同高度的第二导电层中的第二固定电极，以及（3）基于第一和第二静电的变化来计算物理量的运算电路当施加物理量时产生的电容。在该结构中，来自第一静电电容的电信号和来自第二静电电容的电信号被输入到运算电路。

3. 发明授权

US08643927B2 MEMS device and method of manufacturing MEMS device 有权
标题翻译： MEMS器件及制造MEMS器件的方法
公开(公告)号：US08643927B2
公开(公告)日：2014-02-04
申请号：US13178480
申请日：2011-07-07
申请人： Chisaki Takubo , Heewon Jeong
发明人： Chisaki Takubo , Heewon Jeong
IPC分类号： G02B26/08
CPC分类号： G01P15/125 , B81B3/001 , G01C19/5747 , G01P15/0802 , G01P2015/0814 , G01P2015/0837 , G01P2015/0874 , G01P2015/088 , G02B26/0841 , G02B26/105 , H01G5/18 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L27/13 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.
摘要翻译：提供突起形成孔以刺穿支撑基板。作为导电材料的多晶硅膜通过氧化物硅膜被包埋在突起形成孔中。多晶硅膜从突出形成孔朝向可移动部分部分地凸出以形成突出部分。换句话说，多晶硅膜从突起形成孔朝向可动部凸出，形成突出部。由此，能够防止包含在MEMS中的可动部附着在其他部件上。

4. 发明申请

US20120038963A1 MEMS DEVICE AND METHOD OF MANUFACTURING MEMS DEVICE 有权
标题翻译： MEMS器件及制造MEMS器件的方法
公开(公告)号：US20120038963A1
公开(公告)日：2012-02-16
申请号：US13178480
申请日：2011-07-07
申请人： Chisaki TAKUBO , Heewon Jeong
发明人： Chisaki TAKUBO , Heewon Jeong
IPC分类号： G02B26/10 , H01L21/02 , H01L29/84 , G01P15/125
CPC分类号： G01P15/125 , B81B3/001 , G01C19/5747 , G01P15/0802 , G01P2015/0814 , G01P2015/0837 , G01P2015/0874 , G01P2015/088 , G02B26/0841 , G02B26/105 , H01G5/18 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L27/13 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.
摘要翻译：提供突起形成孔以刺穿支撑基板。作为导电材料的多晶硅膜通过氧化物硅膜被包埋在突起形成孔中。多晶硅膜从突出形成孔朝向可移动部分部分地凸出以形成突出部分。换句话说，多晶硅膜从突起形成孔朝向可动部凸出，形成突出部。由此，能够防止包含在MEMS中的可动部附着在其他部件上。

5. 发明授权

US07919814B2 Semiconductor device with integrated circuit electrically connected to a MEMS sensor by a through-electrode 有权
标题翻译：具有集成电路的半导体器件通过通孔与MEMS传感器电连接
公开(公告)号：US07919814B2
公开(公告)日：2011-04-05
申请号：US12270463
申请日：2008-11-13
申请人： Yasushi Goto , Tsukasa Fujimori , Heewon Jeong , Kiyoko Yamanaka
发明人： Yasushi Goto , Tsukasa Fujimori , Heewon Jeong , Kiyoko Yamanaka
IPC分类号： H01L27/12
CPC分类号： B81C1/00246 , B81B2201/0235 , B81C2203/0728 , B81C2203/0735 , B81C2203/0778 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.
摘要翻译：以及实现半导体器件的小型化和厚度降低以及灵敏度提高，其具有：通过体积微加工技术（例如加速度传感器和角速度传感器）形成的MEMS传感器; 和LSI电路，可以简化具有MEMS传感器和LSI电路的半导体器件的封装结构。在SOI衬底的硅层上形成具有MISFET和布线的集成电路，并且通过处理SOI衬底的衬底层来形成包含内部结构的MEMS传感器。换句话说，通过使用SOI衬底的两个表面，集成电路和MEMS传感器安装在一个SOI衬底上。集成电路和MEMS传感器通过设置在SOI衬底中的通孔电连接。

6. 发明申请

US20110048129A1 Inertial Sensor and Method of Manufacturing the Same 有权
标题翻译：惯性传感器及其制造方法
公开(公告)号：US20110048129A1
公开(公告)日：2011-03-03
申请号：US12867472
申请日：2009-04-17
申请人： Kiyoko Yamanaka , Heewon Jeong , Takashi Hattori , Yasushi Goto
发明人： Kiyoko Yamanaka , Heewon Jeong , Takashi Hattori , Yasushi Goto
IPC分类号： G01C19/56 , B32B37/02
CPC分类号： G01P15/0802 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C1/00293 , G01C19/5733 , G01C19/5769 , G01P15/125 , G01P2015/0814 , Y10T156/10
摘要： An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap.
摘要翻译：提供一种惯性传感器，其能够使诸如加速度传感器的惯性传感器的空间的压力高于密封步骤期间的空间，并提高可靠性。惯性传感器可以通过制造包括基板的惯性传感器，基板上的可移动部分，密封可动部分以覆盖可动部分的盖构件来实现，其中气体发生材料被施加到帽的可动部分侧。

7. 发明申请

US20110132089A1 Inertial Sensor 审中-公开
标题翻译：惯性传感器
公开(公告)号：US20110132089A1
公开(公告)日：2011-06-09
申请号：US13058571
申请日：2009-07-28
申请人： Heewon Jeong , Kiyoko Yamanaka
发明人： Heewon Jeong , Kiyoko Yamanaka
IPC分类号： G01P15/125 , G01P15/00
CPC分类号： G01P15/125 , G01P1/023 , G01P2015/0814
摘要： In order to provide an inertial sensor such as an acceleration sensor which can be downsized and in which a high SNR can be obtained as having a plurality of measurement ranges, an inertial sensor for detecting an inertial force of acceleration based on an electrostatic capacitance change of a detecting unit includes a plurality of detecting units D1 to D4 each having a different sensitivity defined by a ratio between an applied inertial force and physical quantity generated from each of the detecting units to provide the plurality of measurement ranges. Alternatively, when the inertial sensor includes N (a natural number of 2 or larger) pieces of movable units 6a to 6c, (N+1) or more types of measurement ranges are provided.
摘要翻译：为了提供惯性传感器，例如加速度传感器，其可以被小型化并且可以获得具有多个测量范围的高SNR，用于基于静电电容变化来检测加速度惯性力的惯性传感器检测单元包括多个检测单元D1至D4，每个检测单元具有由施加的惯性力与从每个检测单元产生的物理量之间的比率定义的不同灵敏度，以提供多个测量范围。或者，当惯性传感器包括N（自然数2以上）的可动单元6a〜6c，（N + 1）以上的测量范围。

8. 发明授权

US09229025B2 Inertial sensor 有权
标题翻译：惯性传感器
公开(公告)号：US09229025B2
公开(公告)日：2016-01-05
申请号：US13811950
申请日：2011-08-08
申请人： Kiyoko Yamanaka , Heewon Jeong , Toshiaki Nakamura , Masahide Hayashi
发明人： Kiyoko Yamanaka , Heewon Jeong , Toshiaki Nakamura , Masahide Hayashi
IPC分类号： G01P5/08 , G01P3/44 , G01P15/125 , G01C19/5747 , G01P21/00 , G01P15/08
CPC分类号： G01P15/125 , G01C19/5747 , G01P15/0802 , G01P21/00 , G01P2015/0814
摘要： In order to provide an inertial sensor capable of suppressing a wrong diagnosis even in an adverse environment such that sudden noise occurs, an inertial sensor is provided with a movable part (105), a first detection unit (C1, C2) for detecting the amount of displacement of the movable part (105), a forced vibration means (503, C3, C4) for forcedly vibrating the movable part (105) by applying a diagnosis signal, a physical quantity calculation unit (502) for calculating the physical quantity from a detection signal from the first detection unit (C1, C2), and an abnormality determination unit (504) for determining the presence or absence of the abnormality for the physical quantity using the diagnosis signal obtained via the first detection unit (C1, C2), and is used within a vehicle, the inertial sensor further comprising a second sensor (510) mounted in the same vehicle and connected to the abnormality determination unit (504).
摘要翻译：为了提供一种惯性传感器，即使在出现突发噪声的不利环境下也能够抑制错误的诊断，惯性传感器设置有可动部（105），第一检测单元（C1，C2）通过施加诊断信号对可动部（105）进行强制振动的强制振动装置（503，C3，C4）;物理量计算部（502），用于计算物理量来自第一检测单元（C1，C2）的检测信号和用于通过经由第一检测单元（C1，C2）获得的诊断信号来确定物理量的异常的存在或不存在的异常确定单元（504），并且在车辆内使用，惯性传感器还包括安装在同一车辆中并连接到异常判定单元（504）的第二传感器（510）。

9. 发明授权

US08427177B2 Capacitance sensor 有权
标题翻译：电容传感器
公开(公告)号：US08427177B2
公开(公告)日：2013-04-23
申请号：US12912580
申请日：2010-10-26
申请人： Heewon Jeong , Kiyoko Yamanaka , Yasushi Goto , Toshiaki Nakamura , Masahide Hayashi
发明人： Heewon Jeong , Kiyoko Yamanaka , Yasushi Goto , Toshiaki Nakamura , Masahide Hayashi
IPC分类号： G01R27/26 , G01R27/08
CPC分类号： G01P21/00 , G01C19/5719 , G01P15/125 , G01P2015/0814
摘要： A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode.
摘要翻译：提供了一种在由加速度传感器表示的电容传感器中可以抑制错误检测和错误诊断的技术。构成电容检测单元的第一电容元件和第二电容元件以及配置强制振荡产生单元的第三电容元件和第四电容元件彼此电分离。也就是说，构成第三电容元件和第四电容元件的诊断可移动电极与可动部一体地形成。另一方面，诊断固定电极和诊断固定电极与检测固定电极和检测固定电极电分离。

10. 发明授权

US08096180B2 Inertial sensor 有权
标题翻译：惯性传感器
公开(公告)号：US08096180B2
公开(公告)日：2012-01-17
申请号：US12273068
申请日：2008-11-18
申请人： Kiyoko Yamanaka , Heewon Jeong
发明人： Kiyoko Yamanaka , Heewon Jeong
IPC分类号： G01P9/04 , G01C19/56
CPC分类号： G01C19/5726 , G01C19/5755 , G01P15/125 , G01P2015/0814
摘要： Techniques capable of suppressing fixation between a movable electrode and a fixed electrode in an inertial sensor and preventing the inertial sensor from malfunctioning are provided. The movable electrode, the fixed electrode provided so as to face the movable electrode, a peripheral conductor facing both the movable electrode and the fixed electrode, and a demodulation circuit and a voltage adjustment circuit which adjust the electric potential of the peripheral conductor so that the electric potential of the peripheral conductor becomes the same as the electric potential of the movable electrode are provided, and a change in the capacitance between the movable electrode and the fixed electrode is detected.
摘要翻译：提供了能够抑制惯性传感器中的可动电极和固定电极之间的固定并防止惯性传感器发生故障的技术。可动电极，设置成面对可动电极的固定电极，面向可动电极和固定电极的周边导体，以及调整电路和调整电路的电压调节电路，外围导体的电位变得与设置可动电极的电位相同，并且检测到可动电极与固定电极之间的电容变化。

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