专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5894189A Cold electron emission display device 失效
标题翻译：冷电子发射显示装置
公开(公告)号：US5894189A
公开(公告)日：1999-04-13
申请号：US813211
申请日：1997-03-07
申请人： Kiyohide Ogasawara , Takamasa Yoshikawa , Nobuyoshi Koshida
发明人： Kiyohide Ogasawara , Takamasa Yoshikawa , Nobuyoshi Koshida
IPC分类号： H01J1/312 , H01J29/04 , H01J31/12 , H01J1/05
CPC分类号： B82Y10/00 , H01J1/312 , H01J31/127
摘要： A surface cold electron emission display device includes; a pair of an element-substrate and a transparent substrate sandwiching a vacuum space and facing to each other; plural ohmic electrodes disposed on the element-substrate parallel to each other; and plural cold electron emission elements made of semiconductor. Each cold electron emission element includes; a semiconductor layer formed on the ohmic electrode; a porous semiconductor layer formed on the semiconductor layer; and a metallic thin film electrode formed on the porous semiconductor layer to face the vacuum space. The device also includes; a plurality of bus electrodes formed on the metallic thin film electrodes for bridging and electrically connecting the adjacent metallic thin film electrodes and extending perpendicular to the ohmic electrodes; a plurality of collector electrode disposed on the transparent substrate parallel to each other for capturing emitted electrons from the metallic thin film electrode; and a fluorescent layer formed on the collector electrode.
摘要翻译：表面冷电子发射显示装置包括：一对元件基板和夹着真空空间并面对彼此的透明基板; 设置在元件基板上彼此平行的多个欧姆电极; 以及由半导体制成的多个冷电子发射元件。每个冷电子发射元件包括：形成在欧姆电极上的半导体层; 形成在所述半导体层上的多孔半导体层; 以及形成在多孔半导体层上以面对真空空间的金属薄膜电极。该设备还包括多个总线电极，形成在金属薄膜电极上，用于桥接和电连接相邻的金属薄膜电极并垂直于欧姆电极延伸; 设置在所述透明基板上的多个集电极彼此平行，用于从所述金属薄膜电极捕获发射的电子; 以及形成在集电极上的荧光层。

2. 发明申请

US20080203947A1 Electron Emission Device, and Driving Method Thereof 有权
标题翻译：电子发射装置及其驱动方法
公开(公告)号：US20080203947A1
公开(公告)日：2008-08-28
申请号：US11631487
申请日：2005-06-24
申请人： Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
发明人： Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC分类号： G09G3/22
CPC分类号： H01J1/312 , B82Y10/00 , G09G3/22 , G09G2320/043 , H01J29/96 , H01J31/127 , H01J2201/3125 , H01J2329/0484 , H01J2329/96
摘要： Provided is a method of driving an electron emission apparatus used in displays, imaging devices, flat-surface light sources and the like which can restrain a change with time. The method drives the electron emission apparatus including a plurality of electron emission devices each having an electron supply layer formed of silicon, a silicon-based mixture or a compound thereof, an insulator layer formed on the electron supply layer and a thin film metal electrode formed on the insulator layer, the plurality of electron emission devices being sealed and comprises: a driving step for supplying power between the electron supply layer and the thin film metal electrode to cause electrons to be emitted from the electron emission device and a reactivating step for applying a reactivating voltage at a level equal to or higher than an applied voltage value which causes discontinuity in differential value of the device current flowing between the electron supply layer and the thin film metal electrode with respect to the applied voltage after the driving step.
摘要翻译：提供一种驱动可以随时间抑制变化的显示器，成像装置，平面光源等中使用的电子发射装置的方法。该方法驱动电子发射装置，其包括多个电子发射装置，每个电子发射装置具有由硅形成的电子供体层，硅基混合物或其化合物，形成在电子供应层上的绝缘体层和形成的薄膜金属电极在所述绝缘体层上，所述多个电子发射器件被密封，并且包括：驱动步骤，用于在所述电子供给层和所述薄膜金属电极之间供电，以使电子从所述电子发射器件发射;以及再激活步骤，在等于或高于所施加的电压值的电平上的再激活电压，其导致在驱动步骤之后相对于施加的电压在电子供应层和薄膜金属电极之间流动的器件电流的差分值的不连续性。

3. 发明授权

US06472803B1 Electron emission light-emitting device and display apparatus using the same 失效
标题翻译：电子发射发光装置及其使用的显示装置
公开(公告)号：US06472803B1
公开(公告)日：2002-10-29
申请号：US09369460
申请日：1999-08-06
申请人： Atsushi Yoshizawa , Hideo Satoh , Takashi Yamada , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Takuya Hata , Takamasa Yoshikawa , Hiroshi Ito , Kiyohide Ogasawara
发明人： Atsushi Yoshizawa , Hideo Satoh , Takashi Yamada , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Takuya Hata , Takamasa Yoshikawa , Hiroshi Ito , Kiyohide Ogasawara
IPC分类号： H01J102
CPC分类号： B82Y10/00 , H01J1/312 , H01J31/127 , H01J63/06
摘要： An electron emission light-emitting device comprises an electron emission device and a fluorescent material layer formed on the thin-film metal. The electron emission device comprises an electron-supply layer made of semiconductor formed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron emission light-emitting device emits light when an electric field is applied between the electron-supply layer and the thin-film metal.
摘要翻译：电子发射发光器件包括形成在薄膜金属上的电子发射器件和荧光材料层。电子发射器件包括形成在欧姆电极上的由半导体制成的电子供应层; 形成在电子供给层上的绝缘体层; 以及形成在绝缘体层上的薄膜金属电极。当在电子供给层和薄膜金属之间施加电场时，电子发射发光装置发光。

4. 发明授权

US06404124B1 Electron emission device and display apparatus using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US06404124B1
公开(公告)日：2002-06-11
申请号：US09362198
申请日：1999-07-28
申请人： Kazuto Sakemura , Shuuichi Yanagisawa , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman , Takashi Yamada , Atsushi Yoshizawa , Hideo Satoh , Takamasa Yoshikawa , Kiyohide Ogasawara
发明人： Kazuto Sakemura , Shuuichi Yanagisawa , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman , Takashi Yamada , Atsushi Yoshizawa , Hideo Satoh , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer has a rectifier function layer, whereby the electron emission device emits electrons when an electric field is applied between the electron-supply layer and the thin-film metal.
摘要翻译：电子发射装置包括由金属或半导体制成并设置在欧姆电极上的电子供应层; 形成在电子供给层上的绝缘体层; 以及形成在绝缘体层上的薄膜金属电极。电子供给层具有整流器功能层，由此当在电子供给层和薄膜金属之间施加电场时，电子发射器件发射电子。

5. 发明授权

US6023125A Electron emission device and display using the same 失效
标题翻译：电子发射装置和显示器使用相同
公开(公告)号：US6023125A
公开(公告)日：2000-02-08
申请号：US36747
申请日：1998-03-09
申请人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito
发明人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito
IPC分类号： H01J1/312 , H01J9/02 , H01J29/04 , H01J31/12 , H01L33/00 , H01J1/30
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device comprises an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode. The insulator layer is a dielectric layer having a thickness of 50 nanometers or more, and formed by a vacuum evaporation process with a layer forming rate of 0.5 to 100 nanometers/minute.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。绝缘体层是厚度为50纳米以上的电介质层，通过真空蒸镀法形成，层数为0.5〜100纳米/分钟。

6. 发明授权

US06285123B1 Electron emission device with specific island-like regions 有权
标题翻译：具有特定岛状区域的电子发射装置
公开(公告)号：US06285123B1
公开(公告)日：2001-09-04
申请号：US09393806
申请日：1999-09-10
申请人： Takashi Yamada , Atsushi Yoshizawa , Takuya Hata , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman , Hideo Satoh , Hiroshi Ito , Takamasa Yoshikawa , Kiyohide Ogasawara
发明人： Takashi Yamada , Atsushi Yoshizawa , Takuya Hata , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman , Hideo Satoh , Hiroshi Ito , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022 , H01J31/127
摘要： An electron emission device includes an electron-supply layer formed of metal or semiconductor; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer, whereby electrons are emitted when an electric field is applied between the electron-supply layer and the thin-film metal electrode. The insulator layer and the thin-film metal electrode have at least one island-like region where the thicknesses of the insulator layer and the thin-film metal electrode gradually decrease.
摘要翻译：电子发射装置包括由金属或半导体形成的电子供应层; 形成在电子供给层上的绝缘体层; 以及形成在绝缘体层上的薄膜金属电极，当在电子供给层和薄膜金属电极之间施加电场时，发射电子。绝缘体层和薄膜金属电极具有至少一个岛状区域，其中绝缘体层和薄膜金属电极的厚度逐渐降低。

7. 发明授权

US6130503A Electron emission device and display using the same 失效
标题翻译：电子发射装置和显示器使用相同
公开(公告)号：US6130503A
公开(公告)日：2000-10-10
申请号：US32111
申请日：1998-02-27
申请人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
发明人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
IPC分类号： H01J1/312 , H01J1/62
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层由电介质材料制成，膜厚度为50nm以上。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

8. 发明授权

US5990605A Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US5990605A
公开(公告)日：1999-11-23
申请号：US44819
申请日：1998-03-20
申请人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito , Masataka Yamaguchi , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman
发明人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito , Masataka Yamaguchi , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman
IPC分类号： H01J1/312 , H01J1/05
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
摘要翻译：电子发射装置包括：半导体层; 多孔半导体; 和依次层叠的薄膜金属电极。电极面对真空空间。多孔半导体层具有至少两个以上具有在厚度方向上彼此不同的孔隙率的孔隙率变化层。当在半导体层和薄膜金属电极之间施加电场时，电子发射器件发射电子。可以在多孔半导体层和薄膜金属电极之间形成由选自氧化硅或氮化硅的材料制成的绝缘体层。多孔半导体层的Si骨架被氧化或氮化。

9. 发明授权

US5217850A Optical recording disk and manufacturing method thereof 失效
标题翻译：光学记录盘及其制造方法
公开(公告)号：US5217850A
公开(公告)日：1993-06-08
申请号：US788083
申请日：1991-11-05
申请人： Seiro Fujii , Satoshi Jinno , Takamasa Yoshikawa , Takahiro Kobayashi , Masataka Yamaguchi , Nobuyasu Negishi , Nobuaki Onagi , Shinichiro Suzuki , Masayasu Yamaguchi, deceased , Kiyohide Ogasawara
发明人： Seiro Fujii , Satoshi Jinno , Takamasa Yoshikawa , Takahiro Kobayashi , Masataka Yamaguchi , Nobuyasu Negishi , Nobuaki Onagi , Shinichiro Suzuki , Masayasu Yamaguchi, deceased , Kiyohide Ogasawara
IPC分类号： B41M5/26 , G11B7/24 , G11B7/257 , G11B7/26
CPC分类号： G11B7/263 , Y10S430/146
摘要： An optical recording disk in which a transfer layer having grooves made of ultraviolet setting resin is laminated on the surface of a substrate, and in which a recording layer is laminated on the transfer layer, the optical recording disk comprises a peeling protrusion projectingly provided on the inner circumferential side of the transfer layer.
摘要翻译：一种光记录盘，其中具有由紫外线固化树脂制成的槽的转印层层合在基板的表面上，并且其中记录层被层压在转印层上，光记录盘包括突出地设置在转印层上的剥离突起转印层的内周侧。

10. 发明申请

US20090284129A1 Electron Emitting Device, Display Apparatus Using Electron Emitting Device, and Method of Manufacturing Electron Emitting Device 有权
标题翻译：电子发射装置，使用电子发射装置的显示装置和制造发射装置的方法
公开(公告)号：US20090284129A1
公开(公告)日：2009-11-19
申请号：US12225798
申请日：2007-03-26
申请人： Ryota Tanaka , Nobuyasu Negishi , Kazuto Sakemura , Yoshiyuki Okuda , Tomonari Nakada , Atsushi Watanabe , Takamasa Yoshikawa , Kiyohide Ogasawara
发明人： Ryota Tanaka , Nobuyasu Negishi , Kazuto Sakemura , Yoshiyuki Okuda , Tomonari Nakada , Atsushi Watanabe , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC分类号： H01J1/62 , H01J1/00 , H01J9/04
CPC分类号： H01J9/022 , B82Y10/00 , H01J1/312 , H01J29/04 , H01J31/127 , H01J2201/312 , H01J2201/3125 , H01J2329/0481 , H01J2329/0484
摘要： [PROBLEMS] To provide an electron emitting layer with improved efficiency of electron emission and prevented damage of the device.[SOLVING MEANS] An electron emitting device including an amorphous electron supply layer 4, an insulating layer 5 formed on the electron supply layer 4, and an electrode 6 formed on the insulating layer 5, the electron emitting device emitting electrons when an electric field is applied between the electron supply layer 4 and the electrode 6, wherein the electron emitting device includes a concave portion 7 provided by notching the electrode 6 and the insulating layer 5 to expose the electron supply layer 4, and a carbon layer 8 covering the electrode 6 and the concave portion 7 except for an inner portion 4b of an exposed surface 4a of the electron supply layer 4 and being in contact with an edge portion 4c of the exposed surface 4a of the electron supply layer 4.
摘要翻译： [问题]提供具有改善的电子发射效率并防止器件损坏的电子发射层。 [解决方案]一种电子发射器件，包括非晶电子供体层4，形成在电子供应层4上的绝缘层5和形成在绝缘层5上的电极6，当电场为施加在电子供给层4和电极6之间，其中电子发射器件包括通过切割电极6和绝缘层5而露出电子供应层4而设置的凹部7和覆盖电极6的碳层8 以及除电子供给层4的露出面4a的内部4b以外与与电子供给层4的露出面4a的边缘部4c接触的凹部7。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式