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1. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

2. 发明授权

US5590048A Block exposure pattern data extracting system and method for charged particle beam exposure 失效
标题翻译：块曝光图案数据提取系统和带电粒子束曝光的方法
公开(公告)号：US5590048A
公开(公告)日：1996-12-31
申请号：US71262
申请日：1993-06-04
申请人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
发明人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
IPC分类号： H01J37/302 , G06F17/50 , G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/0458 , H01J2237/31776
摘要： In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.
摘要翻译：在应用于具有包括具有不同形状的多个透明统计数据的块掩模的带电粒子束曝光系统的块曝光图案提取系统中，比较器单元将连接输入曝光图案的顶点之一与其他顶点的第一矢量与将单位块曝光图案的顶点之一的参考点连接到单位块曝光图案的其他顶点的第二矢量。确定单元确定第一矢量是否与第二矢量一致。当确定单元确定第一向量与第二向量一致时，提取单元提取输入的曝光图案作为单位块曝光图案。

3. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

4. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

5. 发明授权

US5719402A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5719402A
公开(公告)日：1998-02-17
申请号：US626906
申请日：1996-04-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/12 , H01J37/141
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过放大器和偏转器之间的开关电阻来减小放大器的输出中的阶跃变化期间的设定时间。预期在放大器的前级的D / A转换器的输出的阶跃变化期间产生的毛刺波形，并用校正波形抵消。在D / A转换器的输出稳定之后，该输出被采样保持，并且用平滑电路内插阶跃变化。通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，并且通过添加一匝或两匝的辅助偏转线圈来改善主偏转的响应速度。通过组合晶片区域和芯片区域中的坐标转换来减少对准时间。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

6. 发明授权

US5391886A Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system 失效
标题翻译：带电粒子束曝光系统和通过这种带电粒子束曝光系统将图案曝光在物体上的方法
公开(公告)号：US5391886A
公开(公告)日：1995-02-21
申请号：US131670
申请日：1993-10-05
申请人： Akio Yamada , Yoshihisa Oae , Satoru Yamazaki , Tomohiko Abe , Katsuhiko Kobayashi , Kiichi Sakamoto , Junko Hatta
发明人： Akio Yamada , Yoshihisa Oae , Satoru Yamazaki , Tomohiko Abe , Katsuhiko Kobayashi , Kiichi Sakamoto , Junko Hatta
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and second mask deflectors, energizing the first mask deflector and simultaneously the second mask deflector according to the first relativistic relationship so as to hit a selected aperture on the stencil mask, to obtain an absolute deflection of the charged particle beam as a function of the energization of the first mask deflector, energizing third and fourth mask deflectors provided at a downstream side of the stencil mask simultaneously to obtain a second relativistic relationship of energization between the third and fourth mask deflectors, and energizing the first through fourth mask deflectors according to the first and second relativistic relationship and further to the absolute relationship, such that the charged particle beam is deflected away from an optical axis and hit a selected aperture on the stencil mask while traveling parallel to the optical axis, and such that the charged particle beam passed through the stencil mask is deflected toward the optical axis and deflected again such that the charged particle beam travels toward the substrate in alignment with the optical axis.
摘要翻译：通过带电粒子束在衬底上曝光图案的方法包括以下步骤：同时向在模板掩模的上游侧提供的第一和第二掩模偏转器同时激励，以获得第一和第二掩模偏转器之间的通电的第一相对论关系，激励第一掩模偏转器并且根据第一相对论关系同时施加第二掩模偏转器，以便击打模板掩模上的选定孔径，以获得作为第一掩模偏转器的通电的函数的带电粒子束的绝对偏转同时激励设置在模板掩模的下游侧的第三和第四掩模偏转器，以获得第三和第四掩模偏转器之间的通电的第二相对论关系，以及根据第一和第二相对论关系激励第一至第四掩模偏转器;以及进一步到绝对的关系，这样带电粒子束偏离光轴并且在平行于光轴移动的同时撞击模板掩模上的选定孔径，并且使得通过模板掩模的带电粒子束向光轴偏转并再次偏转带电粒子束与光轴对准地朝向衬底移动。

7. 发明授权

US5614725A Charged particle beam exposure system and method 失效
标题翻译：带电粒子束曝光系统及方法
公开(公告)号：US5614725A
公开(公告)日：1997-03-25
申请号：US610190
申请日：1996-03-04
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：带电粒子束曝光方法包括以下步骤：创建指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到第二存储装置具有第二较高访问速度，从第二存储装置读出点阵图形数据，并响应于通过消隐从第二存储装置读出的点图形数据产生多个带电粒子束孔径阵列，其中消隐孔阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

8. 发明授权

US6118129A Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements 有权
标题翻译：用于通过成形为多个光束元件的带电粒子束曝光物体上的曝光图案的方法和系统
公开(公告)号：US6118129A
公开(公告)日：2000-09-12
申请号：US283974
申请日：1999-04-01
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.1) as large as, a corresponding resolution of the first bitmap data, respectively in X- and Y-directions; dividing the second bitmap data into cells each having a size of 2n bits in the X-direction and 2m bits in said Y-direction; and creating the first bitmap data from the second bitmap data by selecting four data bits from each of the cells, such that a selection of the data bits is made in each of the cells with a regularity in the X- and Y-directions and such that the number of rows in the X-direction and the number of columns in the Y-direction are both equal to 3 or more.
摘要翻译：一种用于通过带电粒子束曝光在物体上的曝光图案的方法，包括以下步骤：响应于指示曝光图案的第一位图数据，将带电粒子束成形为多个带电粒子束元件，使得多个响应于第一位图数据选择性地关闭带电粒子束元件; 将带电粒子束元件聚焦在物体的表面上; 并通过带电粒子束元件扫描物体的表面; 整形步骤包括以下步骤：将所述曝光图案的图案数据扩展为分辨率为n倍（n> / = 2）分辨率的第二位图数据，并且m倍（m> / = 1），分别在X和Y方向上分别对应的第一位图数据的分辨率; 将第二位图数据分割成在X方向上具有2n位大小和在所述Y方向上具有2m位的单元，以及通过从每个单元中选择四个数据位来从第二位图数据创建第一位图数据，使得在每个单元格中以X方向和Y方向上的规则性进行数据位的选择， X方向上的行数和Y方向上的列数都等于3或更大。

9. 发明授权

US5430304A Blanking aperture array type charged particle beam exposure 失效
标题翻译：消隐孔径阵列式带电粒子束曝光
公开(公告)号：US5430304A
公开(公告)日：1995-07-04
申请号：US327810
申请日：1994-10-24
申请人： Hiroshi Yasuda , Yasushi Takahashi , Yoshihisa Oae , Tomohiko Abe , Shunsuke Fueki
发明人： Hiroshi Yasuda , Yasushi Takahashi , Yoshihisa Oae , Tomohiko Abe , Shunsuke Fueki
IPC分类号： H01L21/027 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/0435 , H01J2237/31776
摘要： A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam. The method includes: (1) selectively designating bit positions of successive n-bit width data blocks of the pattern, each n-bit width data block stored within a row of the pattern; (2) successively reading each n-bit width data block; (3) forming successive rows of unit pattern data from the successively designated and read n-bit width data block, each successive row corresponding to a successively designated and read n-bit width data block; (4) storing the successive rows of unit pattern data to form unit pattern data in bit matrix form having m columns and n rows; and (5) sequentially supplying the successive rows of unit pattern data to the blanking aperture array to control the on/off exposure characteristic of the charged particle beam.
摘要翻译：一种带电粒子束曝光方法，其中被摄体经由具有开/关曝光特性的带电粒子束曝光于图案。消隐孔径阵列具有单独/对应于带电粒子束的相应扫描位置的n个打开/关闭装置，并且用于控制带电粒子束的开/关曝光特性。该方法包括：（1）有选择地指定图案的连续n位宽度数据块的位位置，每个n位宽数据块存储在该行图案中; （2）连续读取每个n位宽数据块; （3）从连续指定和读取的n位宽度数据块形成连续的单位图形数据行，每个连续行对应于连续指定和读取的n位宽度数据块; （4）存储连续的单位图形数据行以形成具有m列和n行的位矩阵形式的单位图形数据; 并且（5）将连续行的单位图形数据顺序地提供给消隐孔径阵列，以控制带电粒子束的接通/断开曝光特性。

10. 发明授权

US5359202A Electron beam exposure apparatus employing blanking aperture array 失效
标题翻译：采用消隐孔径阵列的电子束曝光装置
公开(公告)号：US5359202A
公开(公告)日：1994-10-25
申请号：US95424
申请日：1993-07-23
申请人： Hiroshi Yasuda , Yoshihisa Oae , Tomohiko Abe
发明人： Hiroshi Yasuda , Yoshihisa Oae , Tomohiko Abe
IPC分类号： G03F7/20 , H01J37/06 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/30
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/0435 , H01J2237/06308 , H01J2237/31774
摘要： An electron beam exposure apparatus is provided with an electron gun emitting an electron beam, a blanking aperture array including a plurality of two-dimensionally arranged blanking apertures for selectively deflecting the electron beam passing through the blanking apertures in a predetermined direction so as to shape the electron beam into a plurality of electron beams, a deflection device for regularly deflecting the electron beams passed through the blanking aperture array, and an electron beam controller for controlling the electron beams passed through the blanking aperture array so as to irradiate and expose an object surface. The electron gun has a needle shaped chip which comprises a pair of sloping surfaces which are faces, and a vertex portion connecting the sloping surfaces and forming an inverted V-shape at a tip end of the needle shaped chip when viewed in a direction in which the vertex portion extends.
摘要翻译：电子束曝光装置设置有发射电子束的电子枪，包括多个二维布置的消隐孔的消隐孔阵列，用于在预定方向上选择性地偏转通过消隐孔的电子束，以使电子束形成多个电子束，用于规则地偏转通过消隐孔阵列的电子束的偏转装置和用于控制通过消隐孔阵列的电子束以照射和暴露物体表面的电子束控制器。电子枪具有针状芯片，该针状芯片包括一对<100>倾斜表面，以及顶点部分，其连接倾斜表面并在针状芯片的尖端处形成倒V形顶点部分延伸的方向。

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