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1. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

2. 发明授权

US5262341A Blanking aperture array and charged particle beam exposure method 失效
标题翻译：消隐孔径阵列和带电粒子束曝光方法
公开(公告)号：US5262341A
公开(公告)日：1993-11-16
申请号：US991718
申请日：1992-12-16
申请人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
发明人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
IPC分类号： H01J37/04 , H01J37/302 , H01L21/268
CPC分类号： H01J37/045 , H01J37/3026
摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.
摘要翻译：用于带电粒子束曝光的消隐孔径阵列具有衬底，至少m行×n列的孔在衬底中二维布置，其中每个孔具有一对消隐电极，m和n是整数大于1和n个m位移位寄存器，其设置在基板上，用于将第n列中的孔的m对对的图案数据施加电压，其中i = 1,2。。。，n。图案数据与使用消隐孔径阵列曝光的图案有关。

3. 发明授权

US5144142A Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method 失效
标题翻译：空白孔阵列，生产空隙阵列的方法，充电颗粒光束曝光装置和充电颗粒光束曝光方法
公开(公告)号：US5144142A
公开(公告)日：1992-09-01
申请号：US525062
申请日：1990-05-18
申请人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
发明人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
IPC分类号： H01J37/04 , H01J37/302
CPC分类号： H01J37/045 , H01J37/3026
摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is relates to a pattern which is to be exposed using the blanking aperture array.

4. 发明授权

US5175435A Electron beam exposure system with increased efficiency of exposure operation 失效
标题翻译：电子束曝光系统具有更高的曝光效率
公开(公告)号：US5175435A
公开(公告)日：1992-12-29
申请号：US782251
申请日：1991-10-25
申请人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
IPC分类号： H01L21/027 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/30422 , H01J2237/31776
摘要： An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.
摘要翻译：电子束曝光系统包括图形数据发生器，用于产生指示要写入晶片的电子束的期望图案的第一图案数据和指示由第一图案数据指定的图案的重复次数的第二图案数据，第一和第二图案数据的时间顺序混合。将数据的时间序列混合在数据排序单元中排列成第一图案数据和第二图案数据的并行数据。然后，判断数据是第一图案数据还是第二图案数据，并且当数据是第二图案数据时，紧接在第二图案数据之后的数据与第二图案数据同时被传送到输出路径模式数据，传输到另一个输出路径。由此，第一和第二图案数据形成并行数据。这样形成的并行数据接下来通过从两个输出路径中删除紧跟在包含第二模式数据的数据之后的数据来进行压缩。

5. 发明授权

US5130547A Charged-particle beam exposure method and apparatus 失效
标题翻译：充电颗粒光束曝光方法和装置
公开(公告)号：US5130547A
公开(公告)日：1992-07-14
申请号：US616870
申请日：1990-11-21
申请人： Kiichi Sakamoto , Yoshihisa Oae , Shunsuke Fueki , Akio Yamada , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yoshihisa Oae , Shunsuke Fueki , Akio Yamada , Hiroshi Yasuda
IPC分类号： G05B19/408 , H01J37/302
CPC分类号： H01J37/3026 , G05B19/408 , G05B2219/35567
摘要： A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer. The improvement comprises the steps of (a) holding mask information data, which are information for deflecting the charged particle beam to the selected mask pattern and in which an index is provided every mask pattern of the stencil mask, in a mask memory, (b) holding pattern exposure data, which are information for designating a mask pattern by the use of the index of each mask pattern held in the mask memory and for deflecting the charged particle beam shaped with the designated mask pattern to a predetermined region on the wafer, in a data memory; and (c) deflecting the charged particle beam of the stencil mask and shaping the beam by the use of the mask information data outputted from the mask memory in response to the index designated in the pattern exposure data.

6. 发明授权

US5430304A Blanking aperture array type charged particle beam exposure 失效
标题翻译：消隐孔径阵列式带电粒子束曝光
公开(公告)号：US5430304A
公开(公告)日：1995-07-04
申请号：US327810
申请日：1994-10-24
申请人： Hiroshi Yasuda , Yasushi Takahashi , Yoshihisa Oae , Tomohiko Abe , Shunsuke Fueki
发明人： Hiroshi Yasuda , Yasushi Takahashi , Yoshihisa Oae , Tomohiko Abe , Shunsuke Fueki
IPC分类号： H01L21/027 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/0435 , H01J2237/31776
摘要： A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam. The method includes: (1) selectively designating bit positions of successive n-bit width data blocks of the pattern, each n-bit width data block stored within a row of the pattern; (2) successively reading each n-bit width data block; (3) forming successive rows of unit pattern data from the successively designated and read n-bit width data block, each successive row corresponding to a successively designated and read n-bit width data block; (4) storing the successive rows of unit pattern data to form unit pattern data in bit matrix form having m columns and n rows; and (5) sequentially supplying the successive rows of unit pattern data to the blanking aperture array to control the on/off exposure characteristic of the charged particle beam.
摘要翻译：一种带电粒子束曝光方法，其中被摄体经由具有开/关曝光特性的带电粒子束曝光于图案。消隐孔径阵列具有单独/对应于带电粒子束的相应扫描位置的n个打开/关闭装置，并且用于控制带电粒子束的开/关曝光特性。该方法包括：（1）有选择地指定图案的连续n位宽度数据块的位位置，每个n位宽数据块存储在该行图案中; （2）连续读取每个n位宽数据块; （3）从连续指定和读取的n位宽度数据块形成连续的单位图形数据行，每个连续行对应于连续指定和读取的n位宽度数据块; （4）存储连续的单位图形数据行以形成具有m列和n行的位矩阵形式的单位图形数据; 并且（5）将连续行的单位图形数据顺序地提供给消隐孔径阵列，以控制带电粒子束的接通/断开曝光特性。

7. 发明授权

US5401974A Charged particle beam exposure apparatus and method of cleaning the same 失效
标题翻译：带电粒子束曝光装置及其清洗方法
公开(公告)号：US5401974A
公开(公告)日：1995-03-28
申请号：US191458
申请日：1994-02-03
申请人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
发明人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
IPC分类号： H01J37/30 , H05H1/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3002 , H01J37/32082 , H01J37/32862 , H01J2237/022 , H01J2237/3175
摘要： In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.
摘要翻译：在带电粒子束曝光装置中，带电粒子束投射到待暴露的构件上，从而在其上形成图案，设置有围绕带电粒子束的光轴设置的多个电极，第一单元，将含有氧的气体作为主要成分引入到包括多个电极的带电粒子束曝光设备的内部，并将设备内部保持在0.1托和4托之间的真空度，以及用于选择性地将第二单元将频率在100kHz和800kHz之间的高频信号或参考信号施加到多个电极中的每一个。在装置的内部产生气体的等离子体自由基状态，从而可以消除装置中存在的沉积物。

8. 发明授权

US5223719A Mask for use in a charged particle beam apparatus including beam passing sections 失效
标题翻译：用于包括光束通过部分的带电粒子束装置的掩模
公开(公告)号：US5223719A
公开(公告)日：1993-06-29
申请号：US724338
申请日：1991-07-05
申请人： Yasushi Takahashi , Kiichi Sakamoto , Yoshihisa Oae , Hiroshi Yasuda , Nobuyuki Yasutake
发明人： Yasushi Takahashi , Kiichi Sakamoto , Yoshihisa Oae , Hiroshi Yasuda , Nobuyuki Yasutake
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31761 , H01J2237/31776
摘要： A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.
摘要翻译：一种带电粒子束掩模及其采用掩模的装置及方法，该掩模包括基板和平行排列并具有梯形形状的多个大致矩形的光束通过部分。此外，在其上形成有照射区域具有块图案的矩阵的照射区域的矩阵的掩模被对准并选择性地照射以在物体上形成期望的图案。

9. 发明授权

US5288567A Stencil mask and charged particle beam exposure method and apparatus using the stencil mask 失效
公开(公告)号：US5288567A
公开(公告)日：1994-02-22
申请号：US718433
申请日：1991-06-20
申请人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , H01J37/04 , H01J37/317 , H01L21/30 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/045 , H01J37/3174
摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.

10. 发明授权

US5376802A Stencil mask and charge particle beam exposure method and apparatus using the stencil mask 失效
标题翻译：模板掩模和带电粒子束曝光方法和使用模板掩模的装置
公开(公告)号：US5376802A
公开(公告)日：1994-12-27
申请号：US62573
申请日：1993-05-18
申请人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , H01J37/04 , H01J37/317 , H01L21/30 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/045 , H01J37/3174
摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.
摘要翻译：使用模板掩模来使用透射通过模板掩模的带电粒子束将晶片上的图案曝光。模板掩模由板形成，并且至少形成在板上的块图案区域。块图案区域包括任意形状的孔，用于传送在带电粒子束的一个镜头中照射块图案区域内的孔的带电粒子束。块图案区域形成块掩模，其中相对于孔中的至少预定孔设置一对相对的消隐电极。

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