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1. 发明授权

US06537843B2 Thin film transistor and method of manufacturing the same 有权
公开(公告)号：US06537843B2
公开(公告)日：2003-03-25
申请号：US09978050
申请日：2001-10-17
申请人： Ki-Hyun Lyu , Kwang-Jo Hwang
发明人： Ki-Hyun Lyu , Kwang-Jo Hwang
IPC分类号： H01L2100
CPC分类号： H01L27/12 , H01L29/4908
摘要： A thin film transistor is disclosed, including an insulating substrate, a semiconductor layer formed on the insulating substrate, the semiconductor layer having an active region and an impurity region, a gate insulating layer formed on the active region of the semiconductor layer, a first gate metal layer formed on a predetermined portion of the active region of the semiconductor layer to define a channel region, and a second gate metal layer formed on the first gate metal layer. The first and second gate metal layers have different compositions, such that the second gate metal layer etches faster than the first gate metal layer, thereby preventing formation of a hillock. A first protective layer is formed over the structure, then a light shielding layer, and then a second protective layer is formed over the light shielding layer.

2. 发明授权

US06329672B1 Thin film transistor having a second gate metal layer preventing formation of hillocks 失效
标题翻译：具有防止形成小丘的第二栅极金属层的薄膜晶体管
公开(公告)号：US06329672B1
公开(公告)日：2001-12-11
申请号：US08979843
申请日：1997-11-26
申请人： Ki-Hyun Lyu , Kwang-Jo Hwang
发明人： Ki-Hyun Lyu , Kwang-Jo Hwang
IPC分类号： H01L2904
CPC分类号： H01L27/12 , H01L29/4908
摘要： A thin film transistor is disclosed, including an insulating substrate, a semiconductor layer formed on the insulating substrate, the semiconductor layer having an active region and an impurity region, a gate insulating layer formed on the active region of the semiconductor layer, a first gate metal layer formed on a predetermined portion of the active region of the semiconductor layer to define a channel region, and a second gate metal layer formed on the first gate metal layer. The first and second gate metal layers have different compositions, such that the second gate metal layer etches faster than the first gate metal layer, thereby preventing formation of a hillock. A first protective layer is formed over the structure, then a light shielding layer, and then a second protective layer is formed over the light shielding layer.
摘要翻译：公开了一种薄膜晶体管，其包括绝缘基板，形成在绝缘基板上的半导体层，具有有源区和杂质区的半导体层，形成在半导体层的有源区上的栅极绝缘层，第一栅极金属层形成在半导体层的有源区的预定部分上以限定沟道区，以及形成在第一栅极金属层上的第二栅极金属层。第一和第二栅极金属层具有不同的组成，使得第二栅极金属层比第一栅极金属层蚀刻更快，从而防止形成小丘。在结构上形成第一保护层，然后在遮光层上形成遮光层，然后形成第二保护层。

3. 发明申请

US20100267178A1 ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：有机电致发光显示装置及其制造方法
公开(公告)号：US20100267178A1
公开(公告)日：2010-10-21
申请号：US12824771
申请日：2010-06-28
申请人： In Jae CHUNG , Ki-Yong Kim , Chang-Wook Han , Kwang-Jo Hwang
发明人： In Jae CHUNG , Ki-Yong Kim , Chang-Wook Han , Kwang-Jo Hwang
IPC分类号： H01L51/56
CPC分类号： H01L27/1214 , G09G3/3233 , G09G2300/0417 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , H01L27/3244 , H01L29/78648
摘要： An organic electroluminescent display device includes a substrate, gate and data lines on the substrate and crossing each other to define a pixel region, a switching element at each crossing point of the gate and data lines, a driving element coupled to the switching element, a field control electrode coupled to the driving element and overlapping a channel of the driving element, and an organic electroluminescent diode coupled to the driving element.
摘要翻译：一种有机电致发光显示装置，包括在基板上的基板，栅极和数据线，并且彼此交叉以限定像素区域，栅极和数据线的每个交叉点处的开关元件，耦合到开关元件的驱动元件，耦合到驱动元件并与驱动元件的沟道重叠的场控制电极以及耦合到驱动元件的有机电致发光二极管。

4. 发明授权

US07768060B2 Organic electroluminescent display device and method of fabricating the same 有权
标题翻译：有机电致发光显示装置及其制造方法
公开(公告)号：US07768060B2
公开(公告)日：2010-08-03
申请号：US11117572
申请日：2005-04-29
申请人： In-Jae Chung , Ki-Yong Kim , Chang-Wook Han , Kwang-Jo Hwang
发明人： In-Jae Chung , Ki-Yong Kim , Chang-Wook Han , Kwang-Jo Hwang
IPC分类号： H01L33/00
CPC分类号： H01L27/1214 , G09G3/3233 , G09G2300/0417 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , H01L27/3244 , H01L29/78648
摘要： An organic electroluminescent display device includes a substrate, gate and data lines on the substrate and crossing each other to define a pixel region, a switching element at each crossing point of the gate and data lines, a driving element coupled to the switching element, a field control electrode coupled to the driving element and overlapping a channel of the driving element, and an organic electroluminescent diode coupled to the driving element.
摘要翻译：一种有机电致发光显示装置，包括在基板上的基板，栅极和数据线，并且彼此交叉以限定像素区域，栅极和数据线的每个交叉点处的开关元件，耦合到开关元件的驱动元件，耦合到驱动元件并与驱动元件的沟道重叠的场控制电极以及耦合到驱动元件的有机电致发光二极管。

5. 发明授权

US07663143B2 Thin film transistor having a short channel formed by using an exposure mask with slits 有权
标题翻译：具有通过使用具有狭缝的曝光掩模形成的短沟道的薄膜晶体管
公开(公告)号：US07663143B2
公开(公告)日：2010-02-16
申请号：US11287188
申请日：2005-11-28
申请人： Kwang-Jo Hwang
发明人： Kwang-Jo Hwang
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/66765 , H01L29/78696 , Y10S438/942
摘要： A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures in an exposure mask when forming the channel.
摘要翻译：一种用于制造薄膜晶体管（TFT）通道的孔的掩模，其中通过使通道的长度最小化来降低高分辨率液晶显示器（LCD）器件中TFT的像素充电时间在有源区由非晶硅制成的TFT中。当形成通道时，通过在曝光掩模中暴露光通过孔径可以最小化通道的长度。

6. 发明授权

US07625823B1 Method of patterning a metal layer in a semiconductor device 有权
标题翻译：在半导体器件中图案化金属层的方法
公开(公告)号：US07625823B1
公开(公告)日：2009-12-01
申请号：US09648111
申请日：2000-08-25
申请人： Kwang-Jo Hwang
发明人： Kwang-Jo Hwang
IPC分类号： H01L21/461
CPC分类号： G02F1/1368 , H01L27/1244 , H01L27/1288
摘要： In a method of manufacturing a metal pattern, a metal layer is deposited on a passivation layer, and a photoresist pattern is then formed on the metal layer. Using the photoresist pattern as a mask, an exposed portion of the metal layer is treated with a plasma to lower a binding force in the metal. The metal layer is then etched to form a the metal pattern. The method is applicable to the formation of pixel electrodes in LCD devices.
摘要翻译：在制造金属图案的方法中，金属层沉积在钝化层上，然后在金属层上形成光致抗蚀剂图案。使用光致抗蚀剂图案作为掩模，用等离子体处理金属层的暴露部分以降低金属中的结合力。然后蚀刻金属层以形成金属图案。该方法适用于在LCD装置中形成像素电极。

7. 发明授权

US07125757B2 Method of manufacturing an array substrate for a liquid crystal display device 有权
标题翻译：制造液晶显示装置用阵列基板的方法
公开(公告)号：US07125757B2
公开(公告)日：2006-10-24
申请号：US10106551
申请日：2002-03-27
申请人： Kwang-Jo Hwang , Woo-Hyun Kim
发明人： Kwang-Jo Hwang , Woo-Hyun Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L29/66765 , Y10S438/949
摘要： An advantage of the present invention is to provide a method of manufacturing an array substrate for a liquid crystal display device in which a mask that has double slits in it is used in the photolithographic masking process for the pixel electrode to reduce the distance between a pixel electrode and a neighboring pixel electrode and thus reduce the width of a data line, which results in an improvement of the aperture ratio.
摘要翻译：本发明的一个优点是提供一种液晶显示装置用阵列基板的制造方法，其中在像素电极的光刻掩模处理中使用其中具有双狭缝的掩模，以减少像素之间的距离电极和相邻的像素电极，从而减小数据线的宽度，这导致开口率的改善。

8. 发明申请

US20060121369A1 Mask and method for crystallizing amorphous silicon 有权
公开(公告)号：US20060121369A1
公开(公告)日：2006-06-08
申请号：US11338657
申请日：2006-01-25
申请人： Kwang-Jo Hwang
发明人： Kwang-Jo Hwang
IPC分类号： C30B15/30 , C30B15/26 , C30B11/00 , G03F1/00
CPC分类号： G03F1/29 , C30B13/24 , C30B29/06 , G03F1/26 , G03F1/32 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L27/1281 , H01L27/1285 , H01L29/6675 , H01L29/78672 , H01L29/78696 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser beam onto the amorphous silicon layer through the mask to form a first crystallized region, the laser beam having an energy intensity high enough to completely melt the amorphous silicon layer, wherein the mask comprises a base substrate, a phase shift layer on the base substrate, having a plurality of first stripes having a first width separated by slits, and a blocking layer overlapping the phase shift layer, having a plurality of second stripes having a second width narrower than the first width, the second stripes being parallel to the first stripes.

9. 发明申请

US20060071216A1 Thin film transistor having a short channel formed by using an exposure mask with slits 有权
标题翻译：具有通过使用具有狭缝的曝光掩模形成的短通道的薄膜晶体管
公开(公告)号：US20060071216A1
公开(公告)日：2006-04-06
申请号：US11287188
申请日：2005-11-28
申请人： Kwang-Jo Hwang
发明人： Kwang-Jo Hwang
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/66765 , H01L29/78696 , Y10S438/942
摘要： A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures in an exposure mask when forming the channel.
摘要翻译：一种用于制造薄膜晶体管（TFT）通道的孔的掩模，其中通过使通道的长度最小化来降低高分辨率液晶显示器（LCD）器件中TFT的像素充电时间在有源区由非晶硅制成的TFT中。当形成通道时，通过在曝光掩模中暴露光通过孔径可以最小化通道的长度。

10. 发明申请

US20050269967A1 Dual panel type organic electroluminescent device and method of fabricating the same 有权
标题翻译：双面板型有机电致发光器件及其制造方法
公开(公告)号：US20050269967A1
公开(公告)日：2005-12-08
申请号：US11204300
申请日：2005-08-16
申请人： Jae-Yong Park , Kwang-Jo Hwang
发明人： Jae-Yong Park , Kwang-Jo Hwang
IPC分类号： H05B33/10 , G09F9/30 , H01L27/32 , H01L51/50 , H05B39/04
CPC分类号： H01L27/3253 , H01L27/3276
摘要： An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the first substrate; a data line crossing the gate line; a data ohmic contact layer under the data line, the data ohmic contact layer having the same shape as the data line; a power line parallel to, or substantially parallel to, and spaced apart from the data line, the power line including the same material as the gate line; a switching thin film transistor connected to the gate line and the data line, the switching thin film transistor using the semiconductor layer as a switching active layer; a driving thin film transistor connected to the switching thin film transistor and the power line, the driving thin film transistor using the semiconductor layer as a driving active layer; a connection pattern connected to the driving thin film transistor, the connection pattern including a conductive polymeric material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, the second electrode contacting the connection pattern.
摘要翻译：有机电致发光器件包括彼此面对并间隔开的第一和第二衬底; 在第一基板的内表面上的栅极线; 栅极线上的半导体层，覆盖在第一衬底的表面上的半导体层; 跨越栅极线的数据线; 在数据线下方的数据欧姆接触层，数据欧姆接触层具有与数据线相同的形状; 与数据线平行或基本上平行于并与数据线分开的电力线，电源线包括与栅极线相同的材料; 连接到栅极线和数据线的开关薄膜晶体管，使用半导体层作为开关有源层的开关薄膜晶体管; 连接到开关薄膜晶体管和电力线的驱动薄膜晶体管，使用半导体层作为驱动有源层的驱动薄膜晶体管; 与所述驱动薄膜晶体管连接的连接图案，所述连接图案包括导电性聚合物材料; 在所述第二基板的内表面上的第一电极; 第一电极上的有机电致发光层; 和有机电致发光层上的第二电极，第二电极与连接图案接触。

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