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1. 发明授权

US06329672B1 Thin film transistor having a second gate metal layer preventing formation of hillocks 失效
标题翻译：具有防止形成小丘的第二栅极金属层的薄膜晶体管
公开(公告)号：US06329672B1
公开(公告)日：2001-12-11
申请号：US08979843
申请日：1997-11-26
申请人： Ki-Hyun Lyu , Kwang-Jo Hwang
发明人： Ki-Hyun Lyu , Kwang-Jo Hwang
IPC分类号： H01L2904
CPC分类号： H01L27/12 , H01L29/4908
摘要： A thin film transistor is disclosed, including an insulating substrate, a semiconductor layer formed on the insulating substrate, the semiconductor layer having an active region and an impurity region, a gate insulating layer formed on the active region of the semiconductor layer, a first gate metal layer formed on a predetermined portion of the active region of the semiconductor layer to define a channel region, and a second gate metal layer formed on the first gate metal layer. The first and second gate metal layers have different compositions, such that the second gate metal layer etches faster than the first gate metal layer, thereby preventing formation of a hillock. A first protective layer is formed over the structure, then a light shielding layer, and then a second protective layer is formed over the light shielding layer.
摘要翻译：公开了一种薄膜晶体管，其包括绝缘基板，形成在绝缘基板上的半导体层，具有有源区和杂质区的半导体层，形成在半导体层的有源区上的栅极绝缘层，第一栅极金属层形成在半导体层的有源区的预定部分上以限定沟道区，以及形成在第一栅极金属层上的第二栅极金属层。第一和第二栅极金属层具有不同的组成，使得第二栅极金属层比第一栅极金属层蚀刻更快，从而防止形成小丘。在结构上形成第一保护层，然后在遮光层上形成遮光层，然后形成第二保护层。

2. 发明授权

US06537843B2 Thin film transistor and method of manufacturing the same 有权
公开(公告)号：US06537843B2
公开(公告)日：2003-03-25
申请号：US09978050
申请日：2001-10-17
申请人： Ki-Hyun Lyu , Kwang-Jo Hwang
发明人： Ki-Hyun Lyu , Kwang-Jo Hwang
IPC分类号： H01L2100
CPC分类号： H01L27/12 , H01L29/4908
摘要： A thin film transistor is disclosed, including an insulating substrate, a semiconductor layer formed on the insulating substrate, the semiconductor layer having an active region and an impurity region, a gate insulating layer formed on the active region of the semiconductor layer, a first gate metal layer formed on a predetermined portion of the active region of the semiconductor layer to define a channel region, and a second gate metal layer formed on the first gate metal layer. The first and second gate metal layers have different compositions, such that the second gate metal layer etches faster than the first gate metal layer, thereby preventing formation of a hillock. A first protective layer is formed over the structure, then a light shielding layer, and then a second protective layer is formed over the light shielding layer.

3. 发明申请

US20090322975A1 Array substrate for fringe field switching mode liquid crystal display device and fringe field switching mode liquid crystal display device including the same 有权
标题翻译：用于条纹场开关模式液晶显示装置和边缘场开关模式液晶显示装置的阵列基板
公开(公告)号：US20090322975A1
公开(公告)日：2009-12-31
申请号：US12318271
申请日：2008-12-23
申请人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
发明人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
IPC分类号： G02F1/1368
CPC分类号： G02F1/133707 , G02F2001/134372
摘要： An array substrate for a fringe field switching mode liquid crystal display device includes a plurality of gate lines on a substrate; a gate insulating layer on the plurality of gate lines; a plurality of data lines on the gate insulating layer and crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor electrically connected to the gate and data lines and in each pixel region; a pixel electrode having a plate shape and in the each pixel region, the pixel electrode connected to a portion of the thin film transistor; a first passivation layer on the pixel electrode and over the thin film transistor; and a common electrode on the first passivation layer and having a plurality of openings of a bar shape in the each pixel region, each of the openings having a major axis along the data line and a minor axis along the gate line, wherein a center portion of each opening overlaps the pixel electrode, and both ends along the major axis of each opening protrude beyond the pixel electrode.
摘要翻译：用于边缘场开关模式液晶显示装置的阵列基板包括在基板上的多条栅极线; 多个栅极线上的栅极绝缘层; 在所述栅极绝缘层上的多条数据线，并与所述多条栅极线交叉以限定多个像素区域; 电连接到栅极和数据线以及每个像素区域中的薄膜晶体管; 具有板状的像素电极，并且在每个像素区域中，所述像素电极连接到所述薄膜晶体管的一部分; 在所述像素电极上并在所述薄膜晶体管上方的第一钝化层; 以及在所述第一钝化层上的公共电极，并且在所述每个像素区域中具有棒状形状的多个开口，每个所述开口具有沿所述数据线的长轴和沿着所述栅极线的短轴，其中，中心部分的每个开口与像素电极重叠，并且沿着每个开口的长轴的两端突出超过像素电极。

4. 发明授权

US08154696B2 Array substrate for fringe field switching mode liquid crystal display device and fringe field switching mode liquid crystal display device including the same 有权
标题翻译：用于条纹场开关模式液晶显示装置和边缘场开关模式液晶显示装置的阵列基板
公开(公告)号：US08154696B2
公开(公告)日：2012-04-10
申请号：US12318271
申请日：2008-12-23
申请人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
发明人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
IPC分类号： G02F1/1343 , G02F1/136
CPC分类号： G02F1/133707 , G02F2001/134372
摘要： An array substrate for a fringe field switching mode liquid crystal display device includes a plurality of gate lines on a substrate; a gate insulating layer on the plurality of gate lines; a plurality of data lines on the gate insulating layer and crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor electrically connected to the gate and data lines and in each pixel region; a pixel electrode having a plate shape and in the each pixel region, the pixel electrode connected to a portion of the thin film transistor; a first passivation layer on the pixel electrode and over the thin film transistor; and a common electrode on the first passivation layer and having a plurality of openings of a bar shape in the each pixel region, each of the openings having a major axis along the data line and a minor axis along the gate line, wherein a center portion of each opening overlaps the pixel electrode, and both ends along the major axis of each opening protrude beyond the pixel electrode.
摘要翻译：用于边缘场开关模式液晶显示装置的阵列基板包括在基板上的多条栅极线; 多个栅极线上的栅极绝缘层; 在所述栅极绝缘层上的多条数据线，并与所述多条栅极线交叉以限定多个像素区域; 电连接到栅极和数据线以及每个像素区域中的薄膜晶体管; 具有板状的像素电极，并且在每个像素区域中，所述像素电极连接到所述薄膜晶体管的一部分; 在所述像素电极上并在所述薄膜晶体管上方的第一钝化层; 以及在所述第一钝化层上的公共电极，并且在所述每个像素区域中具有棒状形状的多个开口，每个所述开口具有沿所述数据线的长轴和沿着所述栅极线的短轴，其中，中心部分的每个开口与像素电极重叠，并且沿着每个开口的长轴的两端突出超过像素电极。

5. 发明授权

US06746959B2 Liquid crystal display and method 有权
标题翻译：液晶显示及方法
公开(公告)号：US06746959B2
公开(公告)日：2004-06-08
申请号：US09413854
申请日：1999-10-07
申请人： Ki-Hyun Lyu
发明人： Ki-Hyun Lyu
IPC分类号： H01L2120
CPC分类号： H01L29/66765
摘要： The number of mask steps used to fabricate a TFT in an AMLCD is reduced. In particular, source and drain metallizations, as well as doped and undoped semiconductor layers are patterned at the same time, and the source and drain metallizations and the doped semiconductor layer are etched in a single etching step using an insulating passivation layer as a mask to form source and drain electrodes. Manufacturing costs can be reduced and the manufacturing yield can be improved.
摘要翻译：用于制造AMLCD中的TFT的掩模步骤的数量减少。特别地，源极和漏极金属化以及掺杂和未掺杂的半导体层同时被图案化，并且在使用绝缘钝化层作为掩模的单个蚀刻步骤中蚀刻源极和漏极金属化层和掺杂半导体层形成源极和漏极。可以降低制造成本，提高制造成品率。

6. 发明授权

US6025605A Aligned semiconductor structure 失效
标题翻译：半导体结构对齐
公开(公告)号：US6025605A
公开(公告)日：2000-02-15
申请号：US799389
申请日：1997-02-11
申请人： Ki-Hyun Lyu
发明人： Ki-Hyun Lyu
IPC分类号： H01L21/336 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/66765
摘要： The number of mask steps used to fabricate a TFT in an AMLCD is reduced. In particular, source and drain metallizations, as well as doped and undoped semiconductor layers are patterned at the same time, and the source and drain metallizations and the doped semiconductor layer are etched in a single etching step using an insulating passivation layer as a mask to form source and drain electrodes. Manufacturing costs can be reduced and the manufacturing yield can be improved.
摘要翻译：用于制造AMLCD中的TFT的掩模步骤的数量减少。特别地，源极和漏极金属化以及掺杂和未掺杂的半导体层同时被图案化，并且在使用绝缘钝化层作为掩模的单个蚀刻步骤中蚀刻源极和漏极金属化层和掺杂半导体层形成源极和漏极。可以降低制造成本，提高制造成品率。

7. 发明授权

US08373833B2 Array substrate for fringe field switching mode liquid crystal display device and fringe field switching mode liquid crystal display device including the same 有权
标题翻译：用于条纹场开关模式液晶显示装置和边缘场开关模式液晶显示装置的阵列基板
公开(公告)号：US08373833B2
公开(公告)日：2013-02-12
申请号：US13410529
申请日：2012-03-02
申请人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
发明人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
IPC分类号： G02F1/1343
CPC分类号： G02F1/133707 , G02F2001/134372
摘要： An array substrate for a fringe field switching mode liquid crystal display device includes a plurality of gate lines on a substrate; a gate insulating layer on the plurality of gate lines; a plurality of data lines crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor electrically connected to the gate and data lines in each pixel region; a pixel electrode having a plate shape in each pixel region, and connected to a portion of the thin film transistor; a first passivation layer on the pixel electrode and over the thin film transistor; and a common electrode on the first passivation layer and having a plurality of openings of a bar shape in each pixel region, wherein a center portion of each opening overlaps the pixel electrode, and both ends along a major axis of each opening protrude beyond the pixel electrode.
摘要翻译：用于边缘场开关模式液晶显示装置的阵列基板包括在基板上的多条栅极线; 多个栅极线上的栅极绝缘层; 多条数据线与所述多条栅极线交叉以限定多个像素区域; 电连接到每个像素区域中的栅极和数据线的薄膜晶体管; 像素电极，其在每个像素区域中具有板形，并且连接到所述薄膜晶体管的一部分; 在所述像素电极上并在所述薄膜晶体管上方的第一钝化层; 以及在第一钝化层上的公共电极，并且在每个像素区域中具有多个条形开口，其中每个开口的中心部分与像素电极重叠，并且沿着每个开口的长轴的两端突出超过像素电极。

8. 发明申请

US20120218488A1 ARRAY SUBSTRATE FOR FRINGE FIELD SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND FRINGE FIELD SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：用于FRINGE场切换模式的阵列基板液晶显示装置和FRINGE场切换模式液晶显示装置，包括它们
公开(公告)号：US20120218488A1
公开(公告)日：2012-08-30
申请号：US13410529
申请日：2012-03-02
申请人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
发明人： Sang-Moo Song , In-Ho Hwang , Dae-Lim Park , Ki-Hyun Lyu
IPC分类号： G02F1/136 , H01L33/02
CPC分类号： G02F1/133707 , G02F2001/134372
摘要： An array substrate for a fringe field switching mode liquid crystal display device includes a plurality of gate lines on a substrate; a gate insulating layer on the plurality of gate lines; a plurality of data lines crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor electrically connected to the gate and data lines in each pixel region; a pixel electrode having a plate shape in each pixel region, and connected to a portion of the thin film transistor; a first passivation layer on the pixel electrode and over the thin film transistor; and a common electrode on the first passivation layer and having a plurality of openings of a bar shape in each pixel region, wherein a center portion of each opening overlaps the pixel electrode, and both ends along a major axis of each opening protrude beyond the pixel electrode.
摘要翻译：用于边缘场开关模式液晶显示装置的阵列基板包括在基板上的多条栅极线; 多个栅极线上的栅极绝缘层; 多条数据线与所述多条栅极线交叉以限定多个像素区域; 电连接到每个像素区域中的栅极和数据线的薄膜晶体管; 像素电极，其在每个像素区域中具有板形，并且连接到所述薄膜晶体管的一部分; 在所述像素电极上并在所述薄膜晶体管上方的第一钝化层; 以及在第一钝化层上的公共电极，并且在每个像素区域中具有多个条形开口，其中每个开口的中心部分与像素电极重叠，并且沿着每个开口的长轴的两端突出超过像素电极。

9. 发明授权

US08243235B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08243235B2
公开(公告)日：2012-08-14
申请号：US12270381
申请日：2008-11-13
申请人： Ki-Hyun Lyu , Dae-Hyun Kim , Jun-Yeob Lee , Sang-Moo Song , Sang-Bum Ko , In-Ho Hwang , Su-Hong Cho
发明人： Ki-Hyun Lyu , Dae-Hyun Kim , Jun-Yeob Lee , Sang-Moo Song , Sang-Bum Ko , In-Ho Hwang , Su-Hong Cho
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133512 , G02F1/133514 , G02F1/134363
摘要： A liquid crystal display device includes an array substrate including gate and data line on a first substrate to define first and second sub-pixel regions and a thin film transistor in each of the first and second sub-pixel regions; a color filter substrate including a color filter layer including first and second color filters corresponding to the first and second sub-pixel regions, respectively, a portion of the first color filter overlapping a portion of the second color filter over the data line; and a liquid crystal layer between the array substrate and the color filter substrate.
摘要翻译：液晶显示装置包括在第一基板上包括栅极和数据线的阵列基板，用于限定第一和第二子像素区域以及在第一和第二子像素区域中的每一个中的薄膜晶体管; 滤色器基板，包括分别包括与第一和第二子像素区域对应的第一和第二滤色器的滤色器层，第一滤色器的一部分与数据线上的第二滤色器的一部分重叠; 以及阵列基板和滤色器基板之间的液晶层。

10. 发明授权

US06001539A Method for manufacturing liquid crystal display 失效
标题翻译：制造液晶显示器的方法
公开(公告)号：US06001539A
公开(公告)日：1999-12-14
申请号：US831717
申请日：1997-04-01
申请人： Ki-Hyun Lyu , Hoo-Young Lee
发明人： Ki-Hyun Lyu , Hoo-Young Lee
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , G02F1/1333
CPC分类号： H01L27/1214 , H01L29/66765
摘要： A method of manufacturing an LCD on a substrate, the method comprising the steps of forming a thin film transistor on the substrate; forming an organic passivation layer over the thin film transistor; forming a patterned photoresist over the organic passivation layer; etching the organic passivation layer to form a contact hole over one of source and drain of the transistor; removing the photoresist; forming an SiO.sub.2 layer at a surface of the organic passivation layer by O.sub.2 ashing; and forming a pixel electrode contacting one of the source and drain of the transistor through the contact hole.
摘要翻译：一种在基板上制造LCD的方法，所述方法包括以下步骤：在所述基板上形成薄膜晶体管; 在所述薄膜晶体管上形成有机钝化层; 在所述有机钝化层上形成图案化的光致抗蚀剂; 蚀刻有机钝化层以在晶体管的源极和漏极之一上形成接触孔; 去除光致抗蚀剂; 通过O2灰化在有机钝化层的表面上形成SiO 2层; 以及形成通过所述接触孔接触所述晶体管的源极和漏极之一的像素电极。

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