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    • 1. 发明申请
    • IMMOBILIZATION METHOD OF BIOACTIVE MOLECULES USING POLYPHENOL OXIDASE
    • 使用聚苯乙烯氧化酶的生物活性分子的固定方法
    • US20130224795A1
    • 2013-08-29
    • US13882539
    • 2011-08-19
    • Ki-Dong ParkKyung-Min ParkYoon-Ki JoungYun-Ki LeeJi-Hye OhSeung-Mi Hyun
    • Ki-Dong ParkKyung-Min ParkYoon-Ki JoungYun-Ki LeeJi-Hye OhSeung-Mi Hyun
    • C12P21/00C12P13/02
    • A method is provided for immobilizing a bioactive molecule onto a surface using polyphenol oxidase. In the presence of polyphenol oxidase, a bioactive molecule containing a phenol or catechol group can be simply in situ oxidized within a short time to dopa or dopaquinone which forms a coordinate bond with a metal or polymer substrate, thus immobilizing the bioactive molecule onto the surface with stability. Based on the surface immobilization of bioactive molecules using polyphenol oxidase, various bioactive molecules such as osteogenetic peptides and growth factors can be simply immobilized to medical metal or polymer substrate surfaces such as orthopedic or dental implants which can be then effectively used to induce rapid osteogenesis after being transplanted. Also, antithrombotic agents and/or entothelialization inducing agents may be immobilized to medical substrates for vascular systems, such as stents and artificial blood vessels, thus guaranteeing hemocompatibility to the medical substrates.
    • 提供了一种使用多酚氧化酶将生物活性分子固定在表面上的方法。 在多酚氧化酶的存在下,含有苯酚或儿茶酚基团的生物活性分子可在短时间内简单地原位氧化成与金属或聚合物底物形成配位键的多巴或多巴醌,从而将生物活性分子固定在表面上 稳定。 基于使用多酚氧化酶的生物活性分子的表面固定化,各种生物活性分子如成骨肽和生长因子可以简单地固定在医疗金属或聚合物基底表面如矫形或牙科植入物上,然后可以有效地用于诱导快速成骨 被移植。 此外,抗血栓形成剂和/或内皮化诱导剂可以固定在用于血管系统如支架和人造血管的医疗基​​底上,从而保证对医用基底的血液相容性。
    • 6. 发明申请
    • THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME
    • 薄膜晶体管和使用其的显示器件
    • US20120097965A1
    • 2012-04-26
    • US13072625
    • 2011-03-25
    • Jae-Min ShinJi-Yong ParkKyung-Min Park
    • Jae-Min ShinJi-Yong ParkKyung-Min Park
    • H01L29/786
    • H01L29/78621H01L27/1285H01L29/78696
    • In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.
    • 在薄膜晶体管和具有该薄膜晶体管的显示装置中,根据示例性实施例的薄膜晶体管包括:半导体层,包括沟道区,源极区,漏极区,光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分,源极沟道部分和漏极沟道部分,并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间,并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。
    • 9. 发明申请
    • DISPLAY APPARATUS
    • 显示设备
    • US20100253610A1
    • 2010-10-07
    • US12703730
    • 2010-02-10
    • Seung-Kyu LEEChul-Ho KimKyung-Min ParkKyung-Hoon KimJin-Suk Park
    • Seung-Kyu LEEChul-Ho KimKyung-Min ParkKyung-Hoon KimJin-Suk Park
    • G09G3/36H01L33/00
    • G09G3/3611G09G3/3648G09G2300/0426G09G2320/0223
    • A display apparatus comprises a first thin film transistor (TFT) and a second TFT which are disposed in a display area. A first signal transmission line is disposed in a peripheral area surrounding the display area and is electrically connected to the first TFT. A second signal transmission line adjacent to the first signal transmission line is electrically connected to the second TFT. In a first portion of the peripheral area, the first signal transmission line is parallel to the second signal transmission line and is spaced by a first gap from the second signal transmission line. In a second portion of the peripheral area, the first signal transmission line is parallel to the second signal transmission line and is spaced by a second gap from and the second signal transmission line. The second gap is greater than the first gap. Other features are also provided.
    • 显示装置包括设置在显示区域中的第一薄膜晶体管(TFT)和第二TFT。 第一信号传输线设置在围绕显示区域的周边区域中,并且电连接到第一TFT。 与第一信号传输线相邻的第二信号传输线电连接到第二TFT。 在外围区域的第一部分中,第一信号传输线路与第二信号传输线路平行,并与第二信号传输线路隔开第一间隙。 在外围区域的第二部分中,第一信号传输线平行于第二信号传输线,并与第二信号传输线隔开第二间隙。 第二个差距大于第一个差距。 还提供其他功能。
    • 10. 发明申请
    • Thin Film Transistor Array Panel and Method of Manufacturing the Same
    • 薄膜晶体管阵列面板及其制造方法
    • US20100068841A1
    • 2010-03-18
    • US12433743
    • 2009-04-30
    • Kyung-Min ParkJin-Goo JungChun-Gi YouJae-Byoung ChaeTae-Ill Kim
    • Kyung-Min ParkJin-Goo JungChun-Gi YouJae-Byoung ChaeTae-Ill Kim
    • H01L21/336H01L21/28
    • H01L27/1288H01L27/1214H01L29/4908H01L29/66757
    • A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region by doping conductive impurities in the semiconductor layer; forming an interlayer insulating layer covering the gate electrode; forming a source electrode and a drain electrode respectively connected to the source and the drain regions; forming a passivation layer covering the source and the drain electrodes; forming a pixel electrode connected to the drain electrode; and forming a first alignment key when forming one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode, wherein one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode is at least formed by photolithography process using a photoresist pattern as an etch mask, and a second alignment key completely covering the first alignment key is formed at the same layer as the photoresist pattern.
    • 提供一种制造薄膜晶体管阵列面板的方法,其包括:在绝缘衬底上形成多晶硅半导体层; 在所述半导体层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 通过掺杂半导体层中的导电杂质形成源区和漏区; 形成覆盖所述栅电极的层间绝缘层; 形成分别连接到源区和漏区的源电极和漏电极; 形成覆盖源极和漏极的钝化层; 形成连接到所述漏电极的像素电极; 以及在形成从半导体层,栅电极,源极和漏极以及像素电极中选择的一个时形成第一对准键,其中从半导体层,栅电极,源电极和漏电极中选择一个, 并且至少通过使用光致抗蚀剂图案作为蚀刻掩模的光刻工艺形成像素电极,并且在与光致抗蚀剂图案相同的层处形成完全覆盖第一对准键的第二对准键。