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    • 5. 发明授权
    • Input/output drivers
    • 输入/输出驱动器
    • US06369613B1
    • 2002-04-09
    • US09558537
    • 2000-04-26
    • John CostelloBehzad Nouban
    • John CostelloBehzad Nouban
    • H03K190175
    • H03K19/00315H03K19/018585
    • A technique is provided for improving the output drive capacity of output drivers on an integrated circuit that is configured to support I/O standards having operating voltages greater than the intrinsic core supply voltage. When MOS field-effect transistors are used in the I/O circuitry of such integrated circuits, the gate oxide layers of the transistors in the interface circuitry may need to be thicker than those comprising the core circuitry in order to tolerate I/O voltages that exceed the core supply voltage. In counteracting the degradation in output drive that may result from thickening the gate oxide layer, the pull-down signal applied to the gate of the pull-down transistor is preferably level-shifted from the core supply voltage to the higher external operating voltage associated with the I/O standard being supported. This external voltage is made available to the level-shifting circuit preferably through a spare pin or a gated I/O pin.
    • 提供了一种技术,用于提高集成电路中输出驱动器的输出驱动能力,该集成电路被配置为支持具有大于本征核心电源电压的工作电压的I / O标准。 当在这种集成电路的I / O电路中使用MOS场效应晶体管时,接口电路中的晶体管的栅极氧化物层可能需要比包含核心电路的晶体管的栅极氧化物层厚,以便容忍I / O电压 超过核心电源电压。 在抵消可能由栅极氧化物层增厚引起的输出驱动中的劣化时,施加到下拉晶体管的栅极的下拉信号优选地从芯供电电压电平移位到与 支持I / O标准。 该外部电压优选地通过备用引脚或门控I / O引脚可用于电平移位电路。