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1. 发明授权

US06517977B2 Lithographic template and method of formation and use 有权
公开(公告)号：US06517977B2
公开(公告)日：2003-02-11
申请号：US09819388
申请日：2001-03-28
申请人： Doug J. Resnick , Kevin J. Nordquist
发明人： Doug J. Resnick , Kevin J. Nordquist
IPC分类号： G03F900
CPC分类号： B29C43/003 , B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (20, 30, 42) is formed having a substrate (22, 32) and a template pedestal (24, 34) having formed thereon an uppermost surface an etched pattern or relief image (26, 36, 48). The template (20, 30, 42) is used in the fabrication of a semiconductor device (44) for affecting a pattern in the device (44) by positioning the template (20, 30, 42) in close proximity to semiconductor device (44) having a radiation sensitive material (50) formed thereon and applying a pressure (52) to cause the radiation sensitive material (50) to flow into the relief image (48) present on the template (42). Radiation (53) is then applied through the template (42) so as to further cure portions of the radiation sensitive material (50) and further define the pattern in the radiation sensitive material (50). The template (20, 30, 42) is then removed to complete fabrication of semiconductor device (44).

2. 发明授权

US06387787B1 Lithographic template and method of formation and use 有权
公开(公告)号：US06387787B1
公开(公告)日：2002-05-14
申请号：US09797558
申请日：2001-03-02
申请人： David P. Mancini , Doug J. Resnick , William J. Dauksher
发明人： David P. Mancini , Doug J. Resnick , William J. Dauksher
IPC分类号： H01L213205
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S438/942 , Y10S438/945 , Y10T428/31507
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), an optional etch stop layer (16) formed on a surface (14) of the substrate (12), and a patterning layer (20) formed on a surface (18) of the etch stop layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).

3. 发明授权

US06992371B2 Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication 有权
标题翻译：包括用于改善有机层的粘附性的无定形碳层的装置及其制造方法
公开(公告)号：US06992371B2
公开(公告)日：2006-01-31
申请号：US10892693
申请日：2004-07-16
申请人： David P. Mancini , Jaime A. Quintero , Doug J. Resnick , Steven M. Smith
发明人： David P. Mancini , Jaime A. Quintero , Doug J. Resnick , Steven M. Smith
IPC分类号： H01L23/48 , H01L23/42 , H01L29/40
CPC分类号： G03F7/094 , B82Y10/00 , G03F7/09
摘要： A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate having a surface, an amorphous carbon layer, formed overlying the surface of the substrate, and a low surface energy material layer overlying the surface of the substrate. The device is formed by providing a substrate having a surface, depositing a low surface energy material layer and an amorphous carbon layer overlying the surface of the substrate adjacent the low surface energy material layer using plasma enhanced chemical vapor deposition (PECVD) or sputtering.
摘要翻译：包括用于改善有机层的粘合性的无定形碳层和制造方法的新型装置，例如半导体装置，微流体装置，表面声波装置，印模模板等。该器件包括具有覆盖在衬底表面上的表面，无定形碳层和覆盖衬底表面的低表面能材料层的衬底。该器件通过使用等离子体增强化学气相沉积（PECVD）或溅射提供具有表面的衬底，沉积低表面能材料层和覆盖邻近低表面能材料层的衬底的表面的无定形碳层而形成。

4. 发明授权

US06737202B2 Method of fabricating a tiered structure using a multi-layered resist stack and use 有权
标题翻译：使用多层抗蚀剂叠层制造分层结构的方法和用途
公开(公告)号：US06737202B2
公开(公告)日：2004-05-18
申请号：US10081199
申请日：2002-02-22
申请人： Kathleen Ann Gehoski , Laura Popovich , David P. Mancini , Doug J. Resnick
发明人： Kathleen Ann Gehoski , Laura Popovich , David P. Mancini , Doug J. Resnick
IPC分类号： H01L21302
CPC分类号： H01L21/0272 , H01L21/0274 , H01L29/42316 , Y10S438/951
摘要： An improved and novel method of forming a tiered structure, such as a T-gate structure, including the fabrication of a stabilized resist layer that provides for the prevention of interlayer intermixing with the deposition of subsequent resist layers. The method includes patterning a base resist layer to provide for an opening which will form the stem of the tiered structure and subsequently stabilizing the resist base layer without deforming the stem opening. Next, a resist stack is deposited on an uppermost surface of the stabilized resist layer. Patterning the resist stack provides for an opening on an uppermost layer or portion, and a reentrant profile in a portion of the resist stack adjacent the stabilized resist layer. Metallization and subsequent removal of the resist layers results in a tiered structure, such as a T-gate structure, formed using only low to medium molecular weight, linear polymeric materials such as those used in positive optical resists in optical lithography.
摘要翻译：形成诸如T型栅结构的分层结构的改进和新颖的方法，包括制造稳定的抗蚀剂层，其提供防止与随后的抗蚀剂层的沉积的层间混合。该方法包括图案化基底抗蚀剂层以提供将形成分层结构的杆的开口，并且随后使抗蚀剂基底层稳定，而不会使阀杆开口变形。接着，在稳定化的抗蚀剂层的最上表面上淀积抗蚀剂叠层。抗蚀剂层的图案化提供了最上层或部分上的开口，以及在抗蚀剂层的与稳定的抗蚀剂层相邻的部分中的折入轮廓。金属化和随后的抗蚀剂层的去除导致仅使用低分子量至中等分子量的线性聚合物材料（例如在光学光刻中的正光学抗蚀剂中使用的那些）形成的分层结构，例如T形栅结构。

5. 发明授权

US06580172B2 Lithographic template and method of formation and use 有权
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US06580172B2
公开(公告)日：2003-06-17
申请号：US10103608
申请日：2002-03-21
申请人： David P. Mancini , Doug J. Resnick , William J. Dauksher
发明人： David P. Mancini , Doug J. Resnick , William J. Dauksher
IPC分类号： H01L2348
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S438/942 , Y10S438/945 , Y10T428/31507
摘要： The lithographic template is formed having a substrate, an optional etch stop layer formed on a surface of the substrate, and a patterning layer formed on a surface of the etch stop layer. The template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor device having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template is then removed to complete fabrication of the semiconductor device.
摘要翻译：形成光刻模板，其具有衬底，形成在衬底的表面上的任选的蚀刻停止层以及形成在蚀刻停止层的表面上的图案化层。模板用于制造用于影响器件中图案的半导体器件，方法是将模板定位在其上形成有辐射敏感材料的半导体器件附近，并施加压力以使辐射敏感材料流入浮雕图像存在于模板上。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板以完成半导体器件的制造。

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