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1. 发明授权

US08778574B2 Method for etching EUV material layers utilized to form a photomask 有权
标题翻译：用于蚀刻用于形成光掩模的EUV材料层的方法
公开(公告)号：US08778574B2
公开(公告)日：2014-07-15
申请号：US13750888
申请日：2013-01-25
申请人： Keven Yu , Madhavi Chandrachood , Amitabh Sabharwal , Ajay Kumar
发明人： Keven Yu , Madhavi Chandrachood , Amitabh Sabharwal , Ajay Kumar
IPC分类号： G03F7/00 , G03F1/80
CPC分类号： G03F1/00 , G03F1/22 , G03F1/80
摘要： A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻设置在光掩模上的ARC层或吸收层的方法包括将膜堆叠转移到蚀刻室中，该膜堆具有通过图案化层局部暴露的ARC层或吸收层，提供气体将包含至少一种含氟气体的混合物加入到处理室中，施加源RF功率以从气体混合物形成等离子体，将第一类型的RF偏置功率施加到衬底上第一时间段，施加第二类型的RF偏置功率远离衬底持续第二段时间，并且在存在等离子体的情况下通过图案化层蚀刻ARC层或吸收层。

2. 发明申请

US20070257009A1 Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
标题翻译：使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法
公开(公告)号：US20070257009A1
公开(公告)日：2007-11-08
申请号：US11416801
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

3. 发明申请

US20060166108A1 Method for etching a molybdenum layer suitable for photomask fabrication 失效
标题翻译：蚀刻适用于光掩模制造的钼层的方法
公开(公告)号：US20060166108A1
公开(公告)日：2006-07-27
申请号：US11044358
申请日：2005-01-27
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
摘要翻译：本文公开了制造光掩模的方法。在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

4. 发明申请

US20060000802A1 Method and apparatus for photomask plasma etching 审中-公开
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US20060000802A1
公开(公告)日：2006-01-05
申请号：US10882084
申请日：2004-06-30
申请人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
发明人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
IPC分类号： B44C1/22
CPC分类号： H01J37/32651 , G03F1/80 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32871 , H01J2237/0225
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座的处理室。离子基屏蔽设置在基座上方。将衬底放置在离子基屏蔽下方的基座上。工艺气体被引入到处理室中，并且从处理气体形成等离子体。基底主要用通过屏蔽的自由基进行蚀刻。

5. 发明授权

US08293430B2 Method for etching a molybdenum layer suitable for photomask fabrication 失效
标题翻译：蚀刻适用于光掩模制造的钼层的方法
公开(公告)号：US08293430B2
公开(公告)日：2012-10-23
申请号：US11044358
申请日：2005-01-27
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
摘要翻译：本文公开了制造光掩模的方法。在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

6. 发明申请

US20070257008A1 Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：在等离子体反应器中处理工件的方法，其中等离子体源功率施加器和工件相对于彼此动态调节
公开(公告)号：US20070257008A1
公开(公告)日：2007-11-08
申请号：US11416744
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/32568 , H01J37/321
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicators, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括将（a）工件，（b）外源功率施加器，围绕径向倾斜轴线旋转至等离子体工艺参数的空间分布具有至少几乎最小的非 - 相对于共同的对称轴线对称，并且将内源功率施加器相对于外源功率施加器沿对称轴平移到空间分布具有至少几乎最小的非均匀性的位置工件。

7. 发明申请

US20070256784A1 Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：一种具有用于相对于彼此动态地调节等离子体源功率施加器和工件的装置的等离子体反应器
公开(公告)号：US20070256784A1
公开(公告)日：2007-11-08
申请号：US11416547
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01J37/321 , H01L21/68764
摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.
摘要翻译：一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置，或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

8. 发明申请

US20060166107A1 Method for plasma etching a chromium layer suitable for photomask fabrication 失效
标题翻译：用于等离子体蚀刻适用于光掩模制造的铬层的方法
公开(公告)号：US20060166107A1
公开(公告)日：2006-07-27
申请号：US11044341
申请日：2005-01-27
申请人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
发明人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
IPC分类号： C23F3/00 , C03C25/68 , B44C1/22 , C23F1/00 , C03C15/00 , G03F1/00
CPC分类号： C23F4/00 , G03F1/30 , G03F1/54 , G03F1/80
摘要： A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.
摘要翻译：本文提供了蚀刻铬层的方法。在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体，在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。

9. 发明申请

US20130040231A1 METHOD FOR ETCHING A MOLYBDENUM LAYER SUITABLE FOR PHOTOMASK FABRICATION 审中-公开
标题翻译：用于蚀刻适用于光电陶瓷制造的莫尔兹层的方法
公开(公告)号：US20130040231A1
公开(公告)日：2013-02-14
申请号：US13652822
申请日：2012-10-16
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03F1/76
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
摘要翻译：本文公开了制造光掩模的方法。在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

10. 发明授权

US07829243B2 Method for plasma etching a chromium layer suitable for photomask fabrication 失效
标题翻译：用于等离子体蚀刻适用于光掩模制造的铬层的方法
公开(公告)号：US07829243B2
公开(公告)日：2010-11-09
申请号：US11044341
申请日：2005-01-27
申请人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey X. Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
发明人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey X. Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
IPC分类号： G03F1/00
CPC分类号： C23F4/00 , G03F1/30 , G03F1/54 , G03F1/80
摘要： A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.
摘要翻译：本文提供了蚀刻铬层的方法。在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体，在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。

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