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    • 3. 发明授权
    • Bipolar electrochemical charge storage devices and a method of
fabricating the same
    • 双极电化学电荷存储装置及其制造方法
    • US5768090A
    • 1998-06-16
    • US755876
    • 1996-12-02
    • Changming LiRichard H. JungJohn Nerz
    • Changming LiRichard H. JungJohn Nerz
    • H01G9/00H01G9/155
    • H01G9/155Y02E60/13Y10T29/417
    • An electrochemical capacitor cell (140) is provided with first and second electrodes (146) (148), and a solid polymer electrolyte (154) is disposed therebetween. The electrodes may either be of the same or different materials and may be fabricated from ruthenium, iridium, cobalt, tungsten, vanadium, iron, molybdenum, hafnium, nickel, silver, zinc, and combinations thereof. The solid polymer electrolyte is in intimate contact with both electrodes, and is made from a polymeric support structure having dispersed therein an electrolyte active species. Also a method of fabricating a biopolar electrochemical charge storage device by assembling at least the first and second bipolar subassemblies together with the second layer of electrode active material for the first bipolar subassembly in direct contact with the first layer of electrode active material for the second bipolar subassembly without a current collector disposed therebetween.
    • 电化学电容器单元(140)设置有第一和第二电极(146)(148),并且固体聚合物电解质(154)设置在它们之间。 电极可以是相同或不同的材料,并且可以由钌,铱,钴,钨,钒,铁,钼,铪,镍,银,锌及其组合制成。 固体聚合物电解质与两个电极紧密接触,并由其中分散有电解质活性物质的聚合物支持结构制成。 还有一种通过将至少第一和第二双极子组件与用于第一双极子组件的第二电极活性材料层直接接触的第二层电极活性材料直接接触来制造生物极性电化学电荷存储装置的方法 子组件没有集电器设置在它们之间。
    • 8. 发明授权
    • Thick film conductor structure
    • 厚膜导体结构
    • US4728534A
    • 1988-03-01
    • US892629
    • 1986-08-04
    • Roland K. HoRichard H. Jung
    • Roland K. HoRichard H. Jung
    • H01C17/28H05K1/09H05K1/16H05K3/46B05D5/12
    • H05K1/167H01C17/28H05K3/4685H05K1/092H05K2201/035H05K2203/1453
    • In one embodiment of the present invention a thick film resistor structure comprising common materials is disclosed. The structure includes a supporting carrier as a base for the thick film resistor arrangement, which comprises a resistive material printed on the carrier, first and second noble metal terminating layers connected to either side of the resistive material, first and second barrier layers respectively connected to the first and second noble metal terminating layers, and first and second conducting layers respectively connected to said first and second barrier layers. The barrier layers are preferably composed of nickel or tungsten, whereas the noble metal terminating layers are preferably composed of silver. The resistive material, being formed between the terminating layers, is electrically connected to said copper conducting layers to form a precise thick film resistor structure whose resistance is measurable between said conducting layers.
    • 在本发明的一个实施例中,公开了包含普通材料的厚膜电阻器结构。 该结构包括作为厚膜电阻器布置的基底的支撑载体,其包括印刷在载体上的电阻材料,连接到电阻材料的任一侧的第一和第二贵金属端接层,第一和第二阻挡层分别连接到 第一和第二贵金属端接层,以及分别连接到所述第一和第二阻挡层的第一和第二导电层。 阻挡层优选由镍或钨构成,而贵金属端接层优选由银构成。 形成在端接层之间的电阻材料电连接到所述铜导电层以形成精确的厚膜电阻器结构,其电阻可在所述导电层之间测量。