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1. 发明申请

US20090112642A1 PATENT INFORMATION ANALYZING APPARATUS, PATENT INFORMATION ANALYZING METHOD, PATENT INFORMATION ANALYZING PROGRAM, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：专利信息分析装置，专利信息分析方法，专利信息分析程序和计算机可读存储介质
公开(公告)号：US20090112642A1
公开(公告)日：2009-04-30
申请号：US11915315
申请日：2006-05-15
申请人： Kentaro Uekane , Osamu Ochi , Kazuhito Iwai
发明人： Kentaro Uekane , Osamu Ochi , Kazuhito Iwai
IPC分类号： G06Q10/00 , G06N5/02
CPC分类号： G06Q10/10 , G06F16/345 , G06Q10/0639
摘要： The claim analysis process section (60) represents, by a numerical value, the scope of right recited in a claim. Furthermore, the first analysis process section (61) adds up the number of sets of patent specification data whose scopes of rights have been represented by numerical values, and calculates the average of the scopes of the rights. Since the average can be used as an index to analyze the numbers and the scopes of inventions created or filed by applicants and attorneys, it becomes possible to objectively analyze the right acquisition capabilities of applicants and attorneys.
摘要翻译：权利要求分析处理部分（60）通过数值表示权利要求中列举的权利的范围。此外，第一分析处理部（61）将权利范围由数值表示的专利说明数据组的数量相加，并计算权利范围的平均值。由于平均值可以用作分析申请人和律师创建或提交的发明的数量和范围的指标，可以客观地分析申请人和律师的正确获取能力。

2. 发明授权

US06301922B1 Air cycling type air-conditioner 失效
标题翻译：空气循环式空调
公开(公告)号：US06301922B1
公开(公告)日：2001-10-16
申请号：US09509581
申请日：2000-03-29
申请人： Osamu Ochi
发明人： Osamu Ochi
IPC分类号： F25D900
CPC分类号： F24F5/0085 , F24F2003/144 , F25B9/004 , F25B13/00 , F25B2313/02743 , F25B2400/14
摘要： An air cycling type air-conditioner includes: a heat exchanger (3); a compressor (1) compressing suction air and transferring the compressed air to the heat exchanger (3), and compressing air transferred from the heat exchanger (3) and transferring the compressed air as supply air; an expander (4) expanding the suction air and transferring the expanded air to the heat exchanger (3), and expanding air transferred from the heat exchanger (3) and transferring the expanded air as the supply air; and a motor (2) driving the compressor (1) and the expander (4). The air-conditioner further includes: a dehumidifier (10) dehumidifying the suction air; a first temperature and humidity measuring unit (12) measuring the temperature and humidity of the suction air; and a control unit (14) calculating the amount of dehumidification on the basis of the temperature and humidity measured by the first temperature and humidity measuring unit (12) and requested temperature and humidity, and controlling the dehumidifier (10) based on the calculated amount of dehumidification. The suction air is dehumidified by the dehumidifier (10) during the room cooling operation, so that the water is prevented from being condensed even when the temperature of the air is lowered by the heat exchanger (3) and the expander (4). Thus, the efficiency of the air-conditioner as a whole is improved.
摘要翻译：空调循环型空调包括：热交换器（3）; 压缩机（1），压缩吸入空气并将压缩空气传送到热交换器（3），并压缩从热交换器（3）传送的空气并将压缩空气作为供给空气传送; 膨胀器（4）使吸入空气膨胀并将膨胀空气传递到热交换器（3），并且膨胀从热交换器（3）传送的空气并将膨胀空气作为供给空气传送; 以及驱动压缩机（1）和膨胀机（4）的马达（2）。该空调还包括：除湿机（10）对吸入空气进行除湿; 第一温度和湿度测量单元（12），测量吸入空气的温度和湿度; 以及控制单元（14），其基于由所述第一温湿度测量单元（12）测量的温度和湿度以及要求的温度和湿度来计算除湿量，并且基于所计算的量来控制除湿器（10）的除湿。吸入空气在室内制冷运转时由除湿器（10）除湿，即使当热交换器（3）和膨胀机（4）降低空气的温度时，防止水被冷凝。因此，空气调节器整体的效率提高。

3. 发明授权

US4127414A Pattern-forming materials having a radiation sensitive chalcogenide layer and a method of forming patterns with such materials 失效
标题翻译：具有辐射敏感硫族化物层的图案形成材料和用这种材料形成图案的方法
公开(公告)号：US4127414A
公开(公告)日：1978-11-28
申请号：US804659
申请日：1977-06-08
申请人： Akira Yoshikawa , Haruo Nagai , Osamu Ochi , Kazuko Nakano , Yoshihiko Mizushima
发明人： Akira Yoshikawa , Haruo Nagai , Osamu Ochi , Kazuko Nakano , Yoshihiko Mizushima
IPC分类号： G03F1/54 , G03F7/004 , G03C1/76 , G03C1/00 , G03C5/00
CPC分类号： G03F1/54 , G03F7/0044
摘要： A pattern-forming material comprises a substrate and a radiation sensitive chalcogenide layer disposed thereon. The radiation sensitive chalcogenide layer consists of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed thereon. The pattern-forming materials having the radiation sensitive chalcogenide layer of the invention are particularly useful in lithographic applications.
摘要翻译：图案形成材料包括基底和设置在其上的辐射敏感硫族化物层。辐射敏感性硫族化物层由化学组成为75〜95摩尔％硒和5〜25摩尔％的锗和叠加在其上的银层构成。具有本发明的辐射敏感硫族化物层的图案形成材料在光刻应用中特别有用。

4. 发明授权

US4434224A Method of pattern formation 失效
标题翻译：图案形成方法
公开(公告)号：US4434224A
公开(公告)日：1984-02-28
申请号：US343908
申请日：1982-01-29
申请人： Akira Yoshikawa , Akitsu Takeda , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
发明人： Akira Yoshikawa , Akitsu Takeda , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
IPC分类号： H01L21/306 , G03F7/00 , H01L21/027 , H01L21/266 , H01L21/302 , H01L21/3065 , H01L21/314 , G03C5/00
CPC分类号： H01L21/314 , G03F7/0035 , H01L21/0271 , H01L21/266 , H01L21/302
摘要： In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.
摘要翻译：在根据本发明的图案形成方法中，有机聚合物抗蚀剂材料与无机抗蚀剂材料同时使用，即，由有机聚合物抗蚀剂材料层组成的第一所需图案形成在基底材料上，然后整个表面用无机抗蚀剂材料层覆盖，然后用无机抗蚀剂材料层形成第二所需图案，然后将得到的第二所需图案转印到有机聚合物抗蚀剂材料上。根据本发明，通过检测来自基板上的对准标记的反射光可以自动实现掩模对准，也容易进行包括大小图案的浮雕的形成，也可以提高生产量。本发明的方法可以与各种工艺步骤组合，使得这种组合方法适用于深浅蚀刻，层间绝缘膜的形成和剥离方法。

5. 发明授权

US4350541A Doping from a photoresist layer 失效
标题翻译：从光致抗蚀剂层掺杂
公开(公告)号：US4350541A
公开(公告)日：1982-09-21
申请号：US174275
申请日：1980-07-31
申请人： Yoshihiko Mizushima , Akitsu Takeda , Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki
发明人： Yoshihiko Mizushima , Akitsu Takeda , Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki
IPC分类号： G03F7/004 , H01L21/314 , H01L21/225
CPC分类号： H01L21/314 , G03F7/0044 , Y10S438/93
摘要： A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer. The heat resistive overcoating layer may be an insulation layer having a window through which a conductive layer is connected to the doped region and is extended over the overcoating layer. The doped region is formed readily and accurately with relatively few process steps and with a pattern corresponding to an exposure pattern for the inorganic photoresist layer. The diffusion of the impurity from the impurity source layer into the substrate is accurately controlled so as to provide the doped region with a desired impurity concentration. Moreover, the evaporation of the impurity into the atmosphere during processing is minimized.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底的主表面上形成具有第一非晶层的无机光致抗蚀剂层，所述第一非晶层包含Se作为基质成分并且包括用于提供一种导电类型的杂质和第二银或含银层，形成在第一层上; 以曝光图案曝光无机光致抗蚀剂层; 显影曝光的无机光致抗蚀剂层以形成含有无机光致抗蚀剂层作为杂质源层的图案化杂质; 在半导体衬底的主表面上形成耐热性外涂层，同时覆盖杂质源层; 以及通过将杂质从杂质源层扩散到位于杂质源层下面的衬底的区域中而形成掺杂区域。耐热外涂层可以是具有窗口的绝缘层，导电层通过该窗口连接到掺杂区域并且在外涂层上延伸。通过相对较少的工艺步骤并且具有对应于无机光致抗蚀剂层的曝光图案的图案容易且准确地形成掺杂区域。将杂质从杂质源层扩散到衬底中被精确地控制，以便为掺杂区域提供所需的杂质浓度。此外，在处理期间将杂质蒸发到大气中被最小化。

6. 发明授权

US4320191A Pattern-forming process 失效
标题翻译：图案形成过程
公开(公告)号：US4320191A
公开(公告)日：1982-03-16
申请号：US201663
申请日：1980-07-07
申请人： Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
发明人： Akira Yoshikawa , Osamu Ochi , Tomoko Hisaki , Yoshihiko Mizushima
IPC分类号： G03C5/56 , C23F4/00 , G03C1/705 , G03F1/00 , G03F1/54 , G03F7/004 , H01L21/027 , H01L21/311 , H01L21/314
CPC分类号： G03C1/705 , G03C5/56 , G03F1/00 , G03F7/0044 , H01L21/31116 , H01L21/314
摘要： This invention relates to a pattern-forming process using a radiation sensitive chalcogenide layer composed of a laminate of amorphous chalcogenide layer (2) and thin silver layer (3), and discloses a pattern-forming process characterized by etching out an amorphous chalcogenide layer (22) not doped with silver at an unexposed area under an irradiation of a light (6) or an accelerated corpuscular beam by a plasma etching with a fluorine-series gas and also a pattern-forming process wherein silver-doped amorphous chalcogenide layer (21) left on the substrate according to a given pattern by the above process is used as an etching mask and then the substrate layer (1c) is etched out by a plasma etching to form the given pattern on the substrate.
摘要翻译：本发明涉及一种使用由非晶硫族化物层（2）和薄银层（3）层压制成的辐射敏感硫族化物层的图案形成方法，并且公开了一种图案形成工艺，其特征在于蚀刻出非晶硫族化物层（ 22）通过用氟系气体的等离子体蚀刻在光（6）或加速粒子束的照射下在未曝光区域未掺杂银，以及其中银掺杂的非晶态硫族化物层（21）的图案形成工艺）用作蚀刻掩模，然后通过等离子体蚀刻蚀刻出衬底层（1c），以在衬底上形成给定的图案。

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