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1. 发明授权

US08747682B2 Pattern formation method and method for manufacturing semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US08747682B2
公开(公告)日：2014-06-10
申请号：US12849599
申请日：2010-08-03
申请人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
发明人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
IPC分类号： C03C15/00 , C03C25/68 , C23F1/00 , H01B13/00 , B44C1/22
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149
摘要： According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.
摘要翻译：根据一个实施例，公开了图案形成方法。该方法包括在基础上形成多个区域，并且多个区域对应于不同的图案尺寸。该方法包括从多个嵌段共聚物中的另一个嵌段共聚物中分离多个嵌段共聚物，并将多个嵌段共聚物中的每一个分离成相应的一个区域。该方法包括进行每个区域的每个嵌段共聚物的相分离。该方法包括选择性地除去每个相分离的嵌段共聚物的指定相以形成每个嵌段共聚物的图案，并且该图案对于每个区域具有不同的图案尺寸。

2. 发明申请

US20110034029A1 PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：用于制造半导体器件的图案形成方法和方法
公开(公告)号：US20110034029A1
公开(公告)日：2011-02-10
申请号：US12849599
申请日：2010-08-03
申请人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
发明人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
IPC分类号： H01L21/306
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149
摘要： According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.
摘要翻译：根据一个实施例，公开了图案形成方法。该方法包括在基础上形成多个区域，并且多个区域对应于不同的图案尺寸。该方法包括从多个嵌段共聚物中的另一个嵌段共聚物中分离多个嵌段共聚物，并将多个嵌段共聚物中的每一个分离成相应的一个区域。该方法包括进行每个区域的每个嵌段共聚物的相分离。该方法包括选择性地除去每个相分离的嵌段共聚物的指定相以形成每个嵌段共聚物的图案，并且该图案对于每个区域具有不同的图案尺寸。

3. 发明授权

US08158332B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08158332B2
公开(公告)日：2012-04-17
申请号：US12689830
申请日：2010-01-19
申请人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara
发明人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara
IPC分类号： G03C5/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L27/11517 , H01L27/11521
摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.
摘要翻译：根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。

4. 发明申请

US20100183982A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100183982A1
公开(公告)日：2010-07-22
申请号：US12689830
申请日：2010-01-19
申请人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara
发明人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L27/11517 , H01L27/11521
摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.
摘要翻译：根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。

5. 发明授权

US08329385B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08329385B2
公开(公告)日：2012-12-11
申请号：US12481919
申请日：2009-06-10
申请人： Eishi Shiobara , Keisuke Kikutani , Kazuyuki Yahiro , Kentaro Matsunaga , Tomoya Oori
发明人： Eishi Shiobara , Keisuke Kikutani , Kazuyuki Yahiro , Kentaro Matsunaga , Tomoya Oori
IPC分类号： G03F7/26
CPC分类号： G03F7/095 , G03F7/091 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139
摘要： A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：在形成在半导体衬底上的工件膜上形成第一掩模材料膜; 在第一掩模材料膜上形成抗蚀剂图案; 在所述第一掩模材料膜上形成具有所需膜厚度的第二掩模材料膜以覆盖所述抗蚀剂图案; 对所述第二掩模材料膜进行回蚀以暴露所述抗蚀图案和所述第一掩模材料膜; 同时处理曝光的抗蚀剂图案和第一掩模材料膜，同时留下进行回蚀的第二掩模材料膜; 并处理在第一掩模材料膜下露出的工件膜。

6. 发明申请

US20100078860A1 IMPRINT METHOD 有权
标题翻译： IMPRINT方法
公开(公告)号：US20100078860A1
公开(公告)日：2010-04-01
申请号：US12563461
申请日：2009-09-21
申请人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
发明人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
IPC分类号： B29C35/08
CPC分类号： B29C37/0003 , B29C35/0888 , B29C37/006 , B29C59/022 , B29C2035/0822 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要翻译：压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

7. 发明授权

US08419995B2 Imprint method 有权
标题翻译：印记法
公开(公告)号：US08419995B2
公开(公告)日：2013-04-16
申请号：US12563461
申请日：2009-09-21
申请人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
发明人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
IPC分类号： B28B11/08 , B29C35/08
CPC分类号： B29C37/0003 , B29C35/0888 , B29C37/006 , B29C59/022 , B29C2035/0822 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要翻译：压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

8. 发明申请

US20100304568A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20100304568A1
公开(公告)日：2010-12-02
申请号：US12752684
申请日：2010-04-01
申请人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
发明人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
IPC分类号： H01L21/302 , G03F7/20
CPC分类号： G03F1/34 , G03F7/095 , H01L21/0274 , H01L21/31144
摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.
摘要翻译：图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度，通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置，以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂剩下第二光致抗蚀剂。

9. 发明授权

US07794923B2 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

10. 发明授权

US07973907B2 Method for treating substrate, method for conveying substrate, and apparatus for conveying substrate 失效
标题翻译：处理基板的方法，输送基板的方法以及输送基板的装置
公开(公告)号：US07973907B2
公开(公告)日：2011-07-05
申请号：US12261596
申请日：2008-10-30
申请人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
发明人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
IPC分类号： G03B27/52
CPC分类号： G03F7/16
摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.
摘要翻译：在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。气氛基本上不含湿气，直到将基板输送到曝光装置。

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