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1. 发明申请

US20130062611A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130062611A1
公开(公告)日：2013-03-14
申请号：US13397887
申请日：2012-02-16
申请人： Kentaro IKEDA , Mayumi Morizuka
发明人： Kentaro IKEDA , Mayumi Morizuka
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L29/205 , H01L29/861
摘要： A semiconductor device of an embodiment includes: a first semiconductor layer made of AlXGa1-XN (0
摘要翻译：实施例的半导体器件包括：由Al x Ga 1-x N（0

2. 发明授权

US08754420B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08754420B2
公开(公告)日：2014-06-17
申请号：US13397887
申请日：2012-02-16
申请人： Kentaro Ikeda , Mayumi Morizuka
发明人： Kentaro Ikeda , Mayumi Morizuka
IPC分类号： H01L29/76
CPC分类号： H01L29/2003 , H01L29/205 , H01L29/861
摘要： A semiconductor device of an embodiment includes: a first semiconductor layer made of AlXGa1-XN (0
摘要翻译：实施例的半导体器件包括：由Al x Ga 1-x N（0

3. 发明授权

US07221920B2 Voltage controlled oscillator, frequency synthesizer and communication apparatus 失效
标题翻译：压控振荡器，频率合成器和通讯装置
公开(公告)号：US07221920B2
公开(公告)日：2007-05-22
申请号：US10890998
申请日：2004-07-15
申请人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
发明人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
IPC分类号： H04B1/06 , H04B7/00
CPC分类号： H03L7/099 , H03B5/326 , H03B2200/0012 , H03B2201/0208 , H03B2201/025 , H03L7/0891 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/199 , H03L2207/06
摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.
摘要翻译：压控振荡器包括谐振器，其构造成在振荡的起始时段期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

4. 发明授权

US06489628B1 High electron mobility transistor and power amplifier 失效
标题翻译：高电子迁移率晶体管和功率放大器
公开(公告)号：US06489628B1
公开(公告)日：2002-12-03
申请号：US09606015
申请日：2000-06-29
申请人： Mayumi Morizuka
发明人： Mayumi Morizuka
IPC分类号： H01L2906
CPC分类号： H01L29/7781 , H01L29/2003
摘要： According to this invention, a group III nitride inverted high electron mobility transistor, and a power amplifier using the same are provided. A transistor and power amplifier according to this invention are characterized in that the lattice constant of a bulk of a donor layer is larger than that of an underlayer containing a group III nitride compound semiconductor material, or the donor layer is made of impurity-doped AlyGa(1−y)N, the underlayer is made of undoped AlxGa(1−x)N, and x and y satisfy an inequality 0≦y
摘要翻译：根据本发明，提供了III族氮化物反相高电子迁移率晶体管，以及使用其的功率放大器。根据本发明的晶体管和功率放大器的特征在于，施主层的体的晶格常数大于含有III族氮化物化合物半导体材料的底层的晶格常数，或者施主层由杂质掺杂的Al y Ga （1-y）N，底层由未掺杂的Al x Ga（1-x）N制成，x和y满足不等式0 <= y

5. 发明申请

US20070209176A1 VOLTAGE CONTROLLED OSCILLATOR 失效
标题翻译：电压控制振荡器
公开(公告)号：US20070209176A1
公开(公告)日：2007-09-13
申请号：US11741473
申请日：2007-04-27
申请人： Takashi KAWAKUBO , Kazuhide Abe , Mayumi Morizuka
发明人： Takashi KAWAKUBO , Kazuhide Abe , Mayumi Morizuka
IPC分类号： H04R17/00 , H05K3/10
CPC分类号： H03H9/173 , H03B5/326 , H03B5/366 , H03H9/0542 , H03H2009/02204 , Y10T29/42 , Y10T29/43 , Y10T29/49005 , Y10T29/49155
摘要： The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.
摘要翻译：本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电电影。另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜第一电极和形成在第二压电膜上的第二电极。

6. 发明授权

US07211933B2 Voltage controlled oscillator 失效
标题翻译：压控振荡器
公开(公告)号：US07211933B2
公开(公告)日：2007-05-01
申请号：US10935264
申请日：2004-09-08
申请人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
发明人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
IPC分类号： H01L41/08
CPC分类号： H03H9/173 , H03B5/326 , H03B5/366 , H03H9/0542 , H03H2009/02204 , Y10T29/42 , Y10T29/43 , Y10T29/49005 , Y10T29/49155
摘要： The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.
摘要翻译：本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电电影。另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜第一电极和形成在第二压电膜上的第二电极。

7. 发明申请

US20050059375A1 Voltage controlled oscillator, frequency synthesizer and communication apparatus 失效
标题翻译：压控振荡器，频率合成器和通讯装置
公开(公告)号：US20050059375A1
公开(公告)日：2005-03-17
申请号：US10890998
申请日：2004-07-15
申请人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
发明人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
IPC分类号： H03K3/354 , H03B1/00 , H03B5/30 , H03B5/32 , H03H9/17 , H03L7/08 , H03L7/089 , H03L7/099 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/187 , H03L7/199 , H04B1/06 , H04B7/00 , H04B17/00
CPC分类号： H03L7/099 , H03B5/326 , H03B2200/0012 , H03B2201/0208 , H03B2201/025 , H03L7/0891 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/199 , H03L2207/06
摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.
摘要翻译：压控振荡器包括谐振器，其构造成在振荡的起始周期期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

8. 发明授权

US06555851B2 High electron mobility transistor 失效
标题翻译：高电子迁移率晶体管
公开(公告)号：US06555851B2
公开(公告)日：2003-04-29
申请号：US09778823
申请日：2001-02-08
申请人： Mayumi Morizuka
发明人： Mayumi Morizuka
IPC分类号： H01L310256
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A high electron mobility transistor comprises a GaN-based electron accumulation layer formed on a substrate, an electron supply layer formed on the electron accumulation layer, a source electrode and a drain electrode formed on the electron supply layer and spaced from each other, a gate electrode formed on the electron supply layer between the source and drain electrodes, and a hole absorption electrode formed on the electron accumulation layer so as to be substantially spaced from the electron supply layer. Since the hole absorption electrode is formed on the electron absorption layer in order to prevent holes generated by impact ionization from being accumulated on the electron accumulation layer, a kink phenomenon is prevented. Good drain-current/voltage characteristics are therefore obtained. A high power/high electron mobility transistor is provided with a high power-added efficiency and good linearity.
摘要翻译：高电子迁移率晶体管包括形成在基板上的GaN基电子累积层，形成在电子积累层上的电子供应层，形成在电子供给层上的源电极和漏电极，彼此间隔开，栅极形成在源电极和漏电极之间的电子供给层上的电极和形成在电子积累层上以与电子供给层基本间隔开的空穴吸收电极。由于空穴吸收电极形成在电子吸收层上，以防止由电子堆积层积聚产生的冲击电离产生的空穴，因此可以防止扭结现象。因此获得良好的漏极电流/电压特性。高功率/高电子迁移率晶体管具有高的功率附加效率和良好的线性度。

9. 发明授权

US07490390B2 Method of manufacturing a voltage controlled oscillator 失效
标题翻译：制造压控振荡器的方法
公开(公告)号：US07490390B2
公开(公告)日：2009-02-17
申请号：US11741473
申请日：2007-04-27
申请人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
发明人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
IPC分类号： H04R17/10
CPC分类号： H03H9/173 , H03B5/326 , H03B5/366 , H03H9/0542 , H03H2009/02204 , Y10T29/42 , Y10T29/43 , Y10T29/49005 , Y10T29/49155
摘要： A manufacturing method is provided for a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. The variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.
摘要翻译：为包括薄膜BAW谐振器和可变电容器元件的压控振荡器提供制造方法。薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电电影。所述可变电容器元件包括形成在Si衬底上的固定电极，形成在所述Si衬底上的锚定部分，支撑在所述锚固部分上并且定位成面对所述Si衬底的第一电极，形成在所述第一电极上的第二压电膜，以及形成在第二压电膜上的第二电极。

10. 发明授权

US06908799B2 High electron mobility transistor and method of manufacturing the same 失效
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US06908799B2
公开(公告)日：2005-06-21
申请号：US10673319
申请日：2003-09-30
申请人： Mayumi Morizuka
发明人： Mayumi Morizuka
IPC分类号： H01L29/812 , H01L21/335 , H01L21/338 , H01L29/20 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A high electron mobility transistor comprises a GaN-based electron accumulation layer formed on a substrate, an electron supply layer formed on the electron accumulation layer, a source electrode and a drain electrode formed on the electron supply layer and spaced from each other, a gate electrode formed on the electron supply layer between the source and drain electrodes, and a hole absorption electrode formed on the electron accumulation layer so as to be substantially spaced from the electron supply layer. Since the hole absorption electrode is formed on the electron absorption layer in order to prevent holes generated by impact ionization from being accumulated on the electron accumulation layer, a kink phenomenon is prevented. Good drain-current/voltage characteristics are therefore obtained. A high power/high electron mobility transistor is provided with a high power-added efficiency and good linearity.
摘要翻译：高电子迁移率晶体管包括形成在基板上的GaN基电子累积层，形成在电子积累层上的电子供应层，形成在电子供给层上的源电极和漏电极，彼此间隔开，栅极形成在源电极和漏电极之间的电子供给层上的电极和形成在电子积累层上以与电子供给层基本间隔开的空穴吸收电极。由于空穴吸收电极形成在电子吸收层上，以防止由电子堆积层积聚产生的冲击电离产生的空穴，因此可以防止扭结现象。因此获得良好的漏极电流/电压特性。高功率/高电子迁移率晶体管具有高的功率附加效率和良好的线性度。

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