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1. 发明申请

US20100314602A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100314602A1
公开(公告)日：2010-12-16
申请号：US12728579
申请日：2010-03-22
申请人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
发明人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
IPC分类号： H01L45/00 , H01L21/28
CPC分类号： H01L45/08 , G11C11/5685 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1666
摘要： A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer
摘要翻译：非易失性存储器件包括：第一导电层; 第二导电层; 第一电阻变化层，设置在所述第一导电层和所述第二导电层之间，并且具有通过施加电场和通过电流中的至少一个而改变的电阻; 以及第一侧面层，设置在第一电阻变化层的侧面上，其氧浓度高于第一电阻变化层中的氧浓度

2. 发明授权

US08569728B2 Nonvolatile memory with variable resistance change layers 有权
标题翻译：具有可变电阻变化层的非易失性存储器
公开(公告)号：US08569728B2
公开(公告)日：2013-10-29
申请号：US12728579
申请日：2010-03-22
申请人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
发明人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
IPC分类号： H01L29/02
CPC分类号： H01L45/08 , G11C11/5685 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1666
摘要： A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer.
摘要翻译：非易失性存储器件包括：第一导电层; 第二导电层; 第一电阻变化层，设置在所述第一导电层和所述第二导电层之间，并且具有通过施加电场和通过电流中的至少一个而改变的电阻; 以及设置在所述第一电阻变化层的侧表面上并且具有高于所述第一电阻变化层中的氧浓度的氧浓度的第一横向层。

3. 发明申请

US20100019312A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100019312A1
公开(公告)日：2010-01-28
申请号：US12510577
申请日：2009-07-28
申请人： Katsuyuki SEKINE , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
发明人： Katsuyuki SEKINE , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L29/513 , H01L29/66833 , H01L29/7926
摘要： A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.
摘要翻译：半导体器件包括半导体区域，形成在半导体区域的表面上的隧道绝缘膜，形成在隧道绝缘膜的表面上并含有硅和氮的电荷存储绝缘膜，形成在表面上的块状绝缘膜以及形成在所述块绝缘膜的表面上的控制栅电极，其中所述隧道绝缘膜具有形成在所述半导体区域的表面上并且包含硅和氧的第一绝缘膜，第二绝缘膜形成在第一绝缘膜的表面上的膜，以及形成在第二绝缘膜的表面上并且含有硅和氧的第三绝缘膜，并且第二绝缘膜中的电荷陷阱状态具有比电荷密度低的密度 - 绝缘膜。

4. 发明授权

US08829593B2 Semiconductor memory device having three-dimensionally arranged memory cells, and manufacturing method thereof 有权
标题翻译：具有三维布置的存储单元的半导体存储器件及其制造方法
公开(公告)号：US08829593B2
公开(公告)日：2014-09-09
申请号：US12726952
申请日：2010-03-18
申请人： Katsuyuki Sekine , Kensuke Takano , Masaaki Higuchi , Tetsuya Kai , Yoshio Ozawa
发明人： Katsuyuki Sekine , Kensuke Takano , Masaaki Higuchi , Tetsuya Kai , Yoshio Ozawa
IPC分类号： H01L29/792 , H01L21/336 , H01L29/423 , H01L27/115 , H01L29/788
CPC分类号： H01L27/11578 , H01L27/11551 , H01L27/11556 , H01L27/11582 , H01L29/42332 , H01L29/7881 , H01L29/792 , H01L29/7926
摘要： A first select transistor is formed on a semiconductor substrate. Memory cell transistors are stacked on the first select transistor and connected in series. A second select transistor is formed on the memory cell transistors. The memory cell transistors include a tapered semiconductor pillar which increases in diameter from the first select transistor toward the second select transistor, a tunnel dielectric film formed on the side surface of the semiconductor pillar, a charge storage layer which is formed on the side surface of the tunnel dielectric film and which increases in charge trap density from the first select transistor side toward the second select transistor side, a block dielectric film formed on the side surface of the charge storage layer, and conductor films which are formed on the side surface of the block dielectric film and which serve as gate electrodes.
摘要翻译：第一选择晶体管形成在半导体衬底上。存储单元晶体管堆叠在第一选择晶体管上并串联连接。在存储单元晶体管上形成第二选择晶体管。存储单元晶体管包括从第一选择晶体管朝向第二选择晶体管的直径增加的锥形半导体柱，形成在半导体柱的侧表面上的隧道电介质膜，形成在半导体柱的侧表面上的电荷存储层隧道电介质膜，并且其从第一选择晶体管侧朝向第二选择晶体管侧的电荷陷阱密度增加，形成在电荷存储层的侧表面上的块状电介质膜和形成在电荷存储层的侧表面上的导体膜该块介质膜并用作栅电极。

5. 发明授权

US08530876B2 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08530876B2
公开(公告)日：2013-09-10
申请号：US12885038
申请日：2010-09-17
申请人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
发明人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L21/00
CPC分类号： H01L45/1233 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/146 , H01L45/1633 , H01L45/1675
摘要： According to one embodiment, a semiconductor memory device comprises a substrate, a lower electrode, a variable resistance film, and an upper electrode. The lower electrode is on the substrate. The variable resistance film is on the lower electrode and stores data. The upper electrode is on the variable resistance film. The variable resistance film comprises a first film, and a second film. The first film is on a side of at least one of the upper electrode and the lower electrode and contains a metal. The second film is between the first film and the other electrode and contains the metal and oxygen. A composition ratio [O]/[Me] of oxygen to the metal in the second film is lower than a stoichiometric ratio and higher than the composition ratio [O]/[Me] in the first film. The composition ratio [0]/[Me] changes between the first film and the second film.
摘要翻译：根据一个实施例，半导体存储器件包括衬底，下电极，可变电阻膜和上电极。下电极位于基板上。可变电阻膜位于下电极上并存储数据。上电极位于可变电阻膜上。可变电阻膜包括第一膜和第二膜。第一膜位于上电极和下电极中的至少一个的一侧并且包含金属。第二膜位于第一膜和另一电极之间，并含有金属和氧。第二膜中氧与金属的组成比[O] / [Me]低于化学计量比，高于第一膜中的组成比[O] / [Me]。组成比[0] / [Me]在第一膜和第二膜之间变化。

6. 发明申请

US20110193050A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110193050A1
公开(公告)日：2011-08-11
申请号：US12885038
申请日：2010-09-17
申请人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
发明人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L45/1233 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/146 , H01L45/1633 , H01L45/1675
摘要： According to one embodiment, a semiconductor memory device comprises a substrate, a lower electrode, a variable resistance film, and an upper electrode. The lower electrode is on the substrate. The variable resistance film is on the lower electrode and stores data. The upper electrode is on the variable resistance film. The variable resistance film comprises a first film, and a second film. The first film is on a side of at least one of the upper electrode and the lower electrode and contains a metal. The second film is between the first film and the other electrode and contains the metal and oxygen. A composition ratio [O]/[Me] of oxygen to the metal in the second film is lower than a stoichiometric ratio and higher than the composition ratio [O]/[Me] in the first film. The composition ratio [0]/[Me] changes between the first film and the second film.
摘要翻译：根据一个实施例，半导体存储器件包括衬底，下电极，可变电阻膜和上电极。下电极位于基板上。可变电阻膜位于下电极上并存储数据。上电极位于可变电阻膜上。可变电阻膜包括第一膜和第二膜。第一膜位于上电极和下电极中的至少一个的一侧并且包含金属。第二膜位于第一膜和另一电极之间，并含有金属和氧。第二膜中氧与金属的组成比[O] / [Me]低于化学计量比，高于第一膜中的组成比[O] / [Me]。组成比[0] / [Me]在第一膜和第二膜之间变化。

7. 发明申请

US20100123180A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100123180A1
公开(公告)日：2010-05-20
申请号：US12564605
申请日：2009-09-22
申请人： Kensuke TAKANO , Yoshio Ozawa , Katsuyuki Sekine , Masaru Kito
发明人： Kensuke TAKANO , Yoshio Ozawa , Katsuyuki Sekine , Masaru Kito
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L27/11521 , H01L27/11551 , H01L27/11556 , H01L29/1037 , H01L29/42332 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a semiconductor layer as a channel, a conductive layer which is formed on a surface of the semiconductor layer with a first insulating layer and a second insulating layer interposed therebetween and functions as a control gate electrode; and a plurality of first charge storage layers formed between the first insulating layer and the second insulating layer. The plurality of first charge storage layers are formed in isolation from one another along a surface of the first insulating layer. The first insulating layer is formed so as to protrude towards the semiconductor layer at a position where each of the first charge storage layers is formed.
摘要翻译：非易失性半导体存储器件包括作为沟道的半导体层，在半导体层的表面上形成有第一绝缘层和介于其间的第二绝缘层的导电层，用作控制栅电极; 以及形成在所述第一绝缘层和所述第二绝缘层之间的多个第一电荷存储层。多个第一电荷存储层沿着第一绝缘层的表面彼此隔离地形成。第一绝缘层形成为在形成有第一电荷存储层的位置处向半导体层突出。

8. 发明授权

US08450715B2 Nonvolatile metal oxide memory element and nonvolatile memory device 有权
标题翻译：非挥发性金属氧化物存储元件和非易失性存储器件
公开(公告)号：US08450715B2
公开(公告)日：2013-05-28
申请号：US12884000
申请日：2010-09-16
申请人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
发明人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C2213/32 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide.
摘要翻译：根据一个实施例，非易失性存储器件包括多个非易失性存储元件，每个非易失性存储元件包括电阻变化膜。电阻变化膜能够响应于施加到电阻变化膜的电压或通过电阻变化膜的电流中的至少一个而在具有不同电阻的多个状态之间进行转换来记录信息，并且电阻变化膜包括包含选自Hf，Zr，Ni，Ta，W，Co，Al，Fe，Mn，Cr和Nb中的至少一种元素的氧化物。包含在电阻变化膜中的杂质元素是选自Mg，Ca，Sr，Ba，Sc，Y，La，V，Ta，B，Ga，In，Tl，C，Si中的至少一种元素， Ge，Sn，Pb，N，P，As，Sb，Bi，S，Se和Te，并且杂质元素的氧化物形成的标准吉布斯能量的绝对值大于氧化物形成的标准吉布斯能量的绝对值的氧化物中所含的元素。

9. 发明授权

US08253189B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08253189B2
公开(公告)日：2012-08-28
申请号：US12510577
申请日：2009-07-28
申请人： Katsuyuki Sekine , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
发明人： Katsuyuki Sekine , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
IPC分类号： H01L29/66
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L29/513 , H01L29/66833 , H01L29/7926
摘要： A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.
摘要翻译：半导体器件包括半导体区域，形成在半导体区域的表面上的隧道绝缘膜，形成在隧道绝缘膜的表面上并含有硅和氮的电荷存储绝缘膜，形成在表面上的块状绝缘膜以及形成在所述块绝缘膜的表面上的控制栅电极，其中所述隧道绝缘膜具有形成在所述半导体区域的表面上并且包含硅和氧的第一绝缘膜，第二绝缘膜形成在第一绝缘膜的表面上的膜，以及形成在第二绝缘膜的表面上并且含有硅和氧的第三绝缘膜，并且第二绝缘膜中的电荷陷阱状态具有比电荷密度低的密度 - 绝缘膜。

10. 发明申请

US20110068316A1 NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储元件和非易失性存储器件
公开(公告)号：US20110068316A1
公开(公告)日：2011-03-24
申请号：US12884000
申请日：2010-09-16
申请人： Kensuke TAKANO , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
发明人： Kensuke TAKANO , Katsuyuki Sekine , Yoshio Ozawa , Ryota Fujitsuka , Mitsuru Sato
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C2213/32 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide.
摘要翻译：根据一个实施例，非易失性存储器件包括多个非易失性存储元件，每个非易失性存储元件包括电阻变化膜。电阻变化膜能够响应于施加到电阻变化膜的电压或通过电阻变化膜的电流中的至少一个而在具有不同电阻的多个状态之间进行转换来记录信息，并且电阻变化膜包括包含选自Hf，Zr，Ni，Ta，W，Co，Al，Fe，Mn，Cr和Nb中的至少一种元素的氧化物。包含在电阻变化膜中的杂质元素是选自Mg，Ca，Sr，Ba，Sc，Y，La，V，Ta，B，Ga，In，Tl，C，Si中的至少一种元素， Ge，Sn，Pb，N，P，As，Sb，Bi，S，Se和Te，并且杂质元素的氧化物形成的标准吉布斯能量的绝对值大于氧化物形成的标准吉布斯能量的绝对值的氧化物中所含的元素。

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