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1. 发明授权

US08253189B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08253189B2
公开(公告)日：2012-08-28
申请号：US12510577
申请日：2009-07-28
申请人： Katsuyuki Sekine , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
发明人： Katsuyuki Sekine , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
IPC分类号： H01L29/66
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L29/513 , H01L29/66833 , H01L29/7926
摘要： A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.
摘要翻译：半导体器件包括半导体区域，形成在半导体区域的表面上的隧道绝缘膜，形成在隧道绝缘膜的表面上并含有硅和氮的电荷存储绝缘膜，形成在表面上的块状绝缘膜以及形成在所述块绝缘膜的表面上的控制栅电极，其中所述隧道绝缘膜具有形成在所述半导体区域的表面上并且包含硅和氧的第一绝缘膜，第二绝缘膜形成在第一绝缘膜的表面上的膜，以及形成在第二绝缘膜的表面上并且含有硅和氧的第三绝缘膜，并且第二绝缘膜中的电荷陷阱状态具有比电荷密度低的密度 - 绝缘膜。

2. 发明申请

US20100019312A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100019312A1
公开(公告)日：2010-01-28
申请号：US12510577
申请日：2009-07-28
申请人： Katsuyuki SEKINE , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
发明人： Katsuyuki SEKINE , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L29/513 , H01L29/66833 , H01L29/7926
摘要： A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.
摘要翻译：半导体器件包括半导体区域，形成在半导体区域的表面上的隧道绝缘膜，形成在隧道绝缘膜的表面上并含有硅和氮的电荷存储绝缘膜，形成在表面上的块状绝缘膜以及形成在所述块绝缘膜的表面上的控制栅电极，其中所述隧道绝缘膜具有形成在所述半导体区域的表面上并且包含硅和氧的第一绝缘膜，第二绝缘膜形成在第一绝缘膜的表面上的膜，以及形成在第二绝缘膜的表面上并且含有硅和氧的第三绝缘膜，并且第二绝缘膜中的电荷陷阱状态具有比电荷密度低的密度 - 绝缘膜。

3. 发明申请

US20080121972A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080121972A1
公开(公告)日：2008-05-29
申请号：US11769304
申请日：2007-06-27
申请人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
发明人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/513
摘要： A semiconductor device including a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate; a first gate electrode layer formed on the first gate insulating film; an element isolation insulating film formed so as to isolate a plurality of the first gate electrode layers; a second gate insulating film layer formed so as to cover upper surfaces of the plurality of first gate electrode layers and the element isolation insulating films; and a second gate electrode layer formed on the second gate insulating film layer; and the second gate insulating film layer includes a NONON stacked film structure and a nitride film layer contacting the first gate electrode layer and constituting a lowermost layer of the NONON stack film structure is separated at a portion interposing the plurality of neighboring first gate electrode layers.
摘要翻译：一种半导体器件，包括半导体衬底; 形成在所述半导体基板上的第一栅极绝缘膜; 形成在所述第一栅极绝缘膜上的第一栅极电极层; 形成为隔离多个第一栅极电极层的元件隔离绝缘膜; 形成为覆盖多个第一栅电极层和元件隔离绝缘膜的上表面的第二栅极绝缘膜层; 以及形成在所述第二栅极绝缘膜层上的第二栅极电极层; 并且第二栅极绝缘膜层包括NONON层叠膜结构和与第一栅极电极层接触并构成NONON叠层膜结构的最下层的氮化物膜层在插入多个相邻的第一栅极电极层的部分处被分离。

4. 发明授权

US06946699B2 Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06946699B2
公开(公告)日：2005-09-20
申请号：US10410442
申请日：2003-04-10
申请人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
发明人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L27/108 , H01L31/119
CPC分类号： H01L21/76847 , H01L21/76864 , H01L27/10867 , H01L29/945
摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.
摘要翻译：半导体器件包括半导体衬底; 形成在所述半导体衬底或沉积在所述半导体衬底上的层中的沟槽; 沉积在所述沟槽中并在其顶表面中具有凹部的第一导电层; 掩埋层，其埋入第一导电层的凹部，并且由熔点低于第一导电层的熔点的材料制成; 以及形成在所述沟槽内的所述掩埋层上并电连接到所述第一导电层的第二导电层。

5. 发明申请

US20060097303A1 Semiconductor device and its manufacturing method 审中-公开
公开(公告)号：US20060097303A1
公开(公告)日：2006-05-11
申请号：US11312388
申请日：2005-12-21
申请人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
发明人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
IPC分类号： H01L29/94
CPC分类号： H01L21/76847 , H01L21/76864 , H01L27/10867 , H01L29/945
摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

6. 发明授权

US06982198B2 Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06982198B2
公开(公告)日：2006-01-03
申请号：US11068853
申请日：2005-03-02
申请人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
发明人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
IPC分类号： H01L21/8242
CPC分类号： H01L21/76847 , H01L21/76864 , H01L27/10867 , H01L29/945
摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.
摘要翻译：半导体器件包括半导体衬底; 形成在所述半导体衬底或沉积在所述半导体衬底上的层中的沟槽; 沉积在所述沟槽中并在其顶表面中具有凹部的第一导电层; 掩埋层，其埋入第一导电层的凹部，并且由熔点低于第一导电层的熔点的材料制成; 以及形成在所述沟槽内的所述掩埋层上并电连接到所述第一导电层的第二导电层。

7. 发明申请

US20050170582A1 Semiconductor device and its manufacturing method 失效
公开(公告)号：US20050170582A1
公开(公告)日：2005-08-04
申请号：US11068848
申请日：2005-03-02
申请人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
发明人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L27/108 , H01L31/119
CPC分类号： H01L21/76847 , H01L21/76864 , H01L27/10867 , H01L29/945
摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

8. 发明申请

US20050167720A1 Semiconductor device and its manufacturing method 失效
公开(公告)号：US20050167720A1
公开(公告)日：2005-08-04
申请号：US11068853
申请日：2005-03-02
申请人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
发明人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L27/108 , H01L31/119
CPC分类号： H01L21/76847 , H01L21/76864 , H01L27/10867 , H01L29/945
摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

9. 发明授权

US07679127B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07679127B2
公开(公告)日：2010-03-16
申请号：US11769304
申请日：2007-06-27
申请人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
发明人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
IPC分类号： H01L29/423 , H01L21/28
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/513
摘要： A semiconductor device including a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate; a first gate electrode layer formed on the first gate insulating film; an element isolation insulating film formed so as to isolate a plurality of the first gate electrode layers; a second gate insulating film layer formed so as to cover upper surfaces of the plurality of first gate electrode layers and the element isolation insulating films; and a second gate electrode layer formed on the second gate insulating film layer; and the second gate insulating film layer includes a NONON stacked film structure and a nitride film layer contacting the first gate electrode layer and constituting a lowermost layer of the NONON stack film structure is separated at a portion interposing the plurality of neighboring first gate electrode layers.
摘要翻译：一种半导体器件，包括半导体衬底; 形成在所述半导体基板上的第一栅极绝缘膜; 形成在所述第一栅极绝缘膜上的第一栅极电极层; 形成为隔离多个第一栅极电极层的元件隔离绝缘膜; 形成为覆盖多个第一栅电极层和元件隔离绝缘膜的上表面的第二栅极绝缘膜层; 以及形成在所述第二栅极绝缘膜层上的第二栅极电极层; 并且第二栅极绝缘膜层包括NONON层叠膜结构和与第一栅极电极层接触并构成NONON叠层膜结构的最下层的氮化物膜层在插入多个相邻的第一栅极电极层的部分处被分离。

10. 发明授权

US07126178B2 Semiconductor device and its manufacturing method 失效
公开(公告)号：US07126178B2
公开(公告)日：2006-10-24
申请号：US11068848
申请日：2005-03-02
申请人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
发明人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L21/76847 , H01L21/76864 , H01L27/10867 , H01L29/945
摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

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