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    • 3. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07465668B2
    • 2008-12-16
    • US11296483
    • 2005-12-08
    • Dai FukushimaGaku MinamihabaHiroyuki Yano
    • Dai FukushimaGaku MinamihabaHiroyuki Yano
    • H01L21/302
    • B24B37/042H01L21/3212H01L21/7684
    • A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
    • 提供了一种制造半导体器件的方法,其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷,从而形成处理膜,同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜, 在抛光垫上含有氧化剂的第二化学溶液,所述处理膜在第一次负载下与抛光垫接触,并且在抛光之后,通过继续进行抛光来对处理膜的表面进行化学抛光 在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液,处理膜以小于第一载荷的第二载荷与抛光垫接触。
    • 5. 发明申请
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20060175296A1
    • 2006-08-10
    • US11296483
    • 2005-12-08
    • Dai FukushimaGaku MinamihabaHiroyuki Yano
    • Dai FukushimaGaku MinamihabaHiroyuki Yano
    • C03C15/00B44C1/22H01L21/302C23F1/00
    • B24B37/042H01L21/3212H01L21/7684
    • A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
    • 提供了一种制造半导体器件的方法,其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷,从而形成处理膜,同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜, 在抛光垫上含有氧化剂的第二化学溶液,所述处理膜在第一次负载下与抛光垫接触,并且在抛光之后,通过继续进行抛光来对处理膜的表面进行化学抛光 在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液,处理膜以小于第一载荷的第二载荷与抛光垫接触。