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    • 7. 发明授权
    • Magnetic random access memory with reduced parasitic currents
    • 具有降低寄生电流的磁性随机存取存储器
    • US06826077B2
    • 2004-11-30
    • US10146201
    • 2002-05-15
    • Kenneth K. SmithAndrew VanBrocklinPeter J. Fricke
    • Kenneth K. SmithAndrew VanBrocklinPeter J. Fricke
    • G11C1100
    • G11C11/16
    • Systems and methods for storing data are provided. A representative system for storing data includes a magnetic random access memory (MRAM) device having a plurality of memory cells. Each memory cell includes a magnetic tunnel junction and a non-magnetic tunnel junction that are connected in series. The magnetic tunnel junction stores a bit value corresponding to a logic high (1) or a logic low (0). The non-magnetic tunnel junction provides little resistance when the memory cell is being read, and a substantially high resistance when the memory cell is not being read. As a result, a negligible level of parasitic current leaks through memory cells that are not being read.
    • 提供了用于存储数据的系统和方法。 用于存储数据的代表性系统包括具有多个存储单元的磁随机存取存储器(MRAM)装置。 每个存储单元包括串联连接的磁性隧道结和非磁性隧道结。 磁性隧道结存储对应于逻辑高(1)或逻辑低(0)的位值。 当存储单元被读取时,非磁性隧道结提供很小的电阻,并且当存储单元未被读取时,非磁性隧道结提供了很大的电阻。 结果,可忽略的寄生电流水平通过未被读取的存储器单元泄漏。