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    • 1. 发明申请
    • VACUUM DEPOSITION APPARATUS
    • 真空沉积装置
    • US20130020195A1
    • 2013-01-24
    • US13543330
    • 2012-07-06
    • Kenji YamamotoSatoshi Hirota
    • Kenji YamamotoSatoshi Hirota
    • C23C14/35
    • C23C14/3492C23C14/325C23C14/352C23C14/505H01J37/32055H01J37/3402H01J37/3447H01J2237/0264
    • Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.
    • 公开了一种真空沉积装置,其抑制由用于蒸发源的多个磁场施加机构产生的磁场的相互干扰。 真空沉积设备包括沉积室; 设置在所述沉积室中的溅射蒸发源的磁场施加机构; 设置在同一沉积室中的电弧蒸发源的磁场施加机构; 以及磁场屏蔽单元,被布置成部分地或全部地覆盖这些用于蒸发源的磁场施加机构(优选地是溅射蒸发源的磁场施加机构)中的至少一个。 磁场屏蔽单元的可开启单元的部分(在计量时面向目标材料的部分)优选地由非磁性材料制成。
    • 2. 发明授权
    • Vacuum deposition apparatus
    • 真空沉积装置
    • US09017534B2
    • 2015-04-28
    • US13543330
    • 2012-07-06
    • Kenji YamamotoSatoshi Hirota
    • Kenji YamamotoSatoshi Hirota
    • C23C14/34C23C14/32C23C14/35C23C14/50H01J37/32H01J37/34
    • C23C14/3492C23C14/325C23C14/352C23C14/505H01J37/32055H01J37/3402H01J37/3447H01J2237/0264
    • Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.
    • 公开了一种真空沉积装置,其抑制由用于蒸发源的多个磁场施加机构产生的磁场的相互干扰。 真空沉积设备包括沉积室; 设置在所述沉积室中的溅射蒸发源的磁场施加机构; 设置在同一沉积室中的电弧蒸发源的磁场施加机构; 以及磁场屏蔽单元,被布置成部分地或全部地覆盖这些用于蒸发源的磁场施加机构(优选地是溅射蒸发源的磁场施加机构)中的至少一个。 磁场屏蔽单元的可开启单元的部分(在计量时面向目标材料的部分)优选地由非磁性材料制成。
    • 8. 发明授权
    • Transparent electroconductive film and process for producing the same
    • 透明导电膜及其制造方法
    • US09297061B2
    • 2016-03-29
    • US12449303
    • 2008-02-15
    • Takashi KuchiyamaKenji Yamamoto
    • Takashi KuchiyamaKenji Yamamoto
    • B32B9/00C23C14/08C03C17/34
    • C23C14/086C03C17/3441C03C2217/944C03C2218/365
    • In a transparent electroconductive film including a transparent substrate and a transparent electroconductive oxide layer disposed on the transparent substrate, when the transparent electroconductive oxide layer is composed of zinc oxide, the surface resistivity of the transparent electroconductive oxide layer increases with time and thus it has been difficult to obtain a transparent electroconductive film stable against an environmental variation. Consequently, hard carbon films are provided on the surfaces of a transparent electroconductive oxide layer including at least one layer and containing zinc oxide as a main component in “the order of transparent substrate-hard carbon film-transparent electroconductive oxide layer-hard carbon film” or “the order of hard carbon film-transparent substrate-transparent electroconductive oxide layer-hard carbon film”. Alternatively, an organosilicon compound covering layer is provided on a surface of the transparent electroconductive oxide layer. Thereby, the water contact angle can be 75 degrees or more, and an increase in the resistivity of the transparent electroconductive oxide layer can be suppressed.
    • 在透明导电膜包括透明基板和透明导电氧化物层的透明导电膜上,当透明导电氧化物层由氧化锌组成时,透明导电氧化物层的表面电阻率随着时间的推移而增加, 难以获得对环境变化稳定的透明导电膜。 因此,在“透明基板 - 硬质碳膜透明导电氧化物层 - 硬质碳膜”的顺序,在包含至少一层并含有氧化锌作为主要成分的透明导电氧化物层的表面上设置硬质碳膜, 或“硬碳膜透明基板透明导电氧化物层 - 硬质碳膜的顺序”。 或者,在透明导电氧化物层的表面上设置有机硅化合物覆盖层。 因此,水接触角可以为75度以上,并且可以抑制透明导电氧化物层的电阻率的增加。