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1. 发明申请

US20130045604A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130045604A1
公开(公告)日：2013-02-21
申请号：US13235666
申请日：2011-09-19
申请人： Kenji MAEDA , Atsushi Itou , Masaru Izawa
发明人： Kenji MAEDA , Atsushi Itou , Masaru Izawa
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32146 , H01J37/32935
摘要： A plasma processing apparatus which can adjust ion energy on a wafer to a value in a desired range to perform machining with high precision or processing stably for a long time is provided. To the plasma processing apparatus which processes a wafer mounted on a mounting surface of an upper portion of a stage using plasma formed in a processing chamber while supplying radio frequency power from a power supply to an electrode disposed in the stage a detector disposed on an outer circumferential side of the mounting surface of the stage to detect a differential component Vpp between the maximum value and the minimum value and a DC component Vdc from a value of a bias voltage formed thereabove and a controller to adjust an output of the radio frequency bias power to make a value of Vpp/2+|Vdc| constant based on an output from the detector are provided.
摘要翻译：提供了一种可以将晶片上的离子能量调整到期望范围内的值以进行高精度或长时间稳定地进行加工的等离子体处理装置。对于等离子体处理装置，其使用在处理室中形成的等离子体处理安装在台上部的安装表面上的晶片，同时将电力从电源提供给设置在该级中的电极，设置在外部的检测器检测在该最大值和最小值之间的差分分量Vpp和从其上形成的偏置电压的值的DC分量Vdc，以及调节射频偏置功率的输出的控制器得到Vpp / 2 + | Vdc |的值提供了基于检测器输出的常数。

2. 发明授权

US08632688B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08632688B2
公开(公告)日：2014-01-21
申请号：US13236800
申请日：2011-09-20
申请人： Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
发明人： Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01J37/32972 , H01J37/32899 , H01L21/32137
摘要： In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.
摘要翻译：在等离子体处理装置中，其中通过匹配箱向电抗器内的处理室内的设置在样品台中的电极提供射频功率，通过匹配在at的数据值的转换点处的功率的特定值来处理晶片特征数据中包括等离子体的发光强度，其时间变化的大小，匹配箱的匹配位置以及提供给电极的射频功率的电压值的变化等特性数据中的至少两种，在处理期间利用通过使用在不同反应器中的相同晶片上执行的处理期间检测到的特征数据检测到的值而获得多个值的功率，多个处理室或等离子体之间的状态之间的差异的半导体处理装置或反应堆。

3. 发明授权

US08397668B2 Plasma processing apparatus 有权
公开(公告)号：US08397668B2
公开(公告)日：2013-03-19
申请号：US12398226
申请日：2009-03-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

4. 发明授权

US08142567B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08142567B2
公开(公告)日：2012-03-27
申请号：US12392127
申请日：2009-02-25
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Makoto Nawata
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Makoto Nawata
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4412
摘要： A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.
摘要翻译：真空处理装置包括具有形成在排气系统的压力调节阀和涡轮分子泵之间的中心的气体通道的构件和具有多个静止叶片的颗粒分散防止单元，所述多个固定叶片形成为沿相反方向倾斜涡轮分子泵的旋转叶片在构件的外周上的方向。

5. 发明授权

US07767054B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07767054B2
公开(公告)日：2010-08-03
申请号：US11213737
申请日：2005-08-30
申请人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Tomoyuki Tamura , Kenji Maeda
发明人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Tomoyuki Tamura , Kenji Maeda
IPC分类号： C23F1/00
CPC分类号： H01J37/32642 , C23F4/00 , H01J37/32009 , H01J37/32532 , H01L21/02087 , H01L21/67109 , H01L21/6831 , H01L21/68707 , H01L21/68742
摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.
摘要翻译：等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源，外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。

6. 发明申请

US20100025369A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100025369A1
公开(公告)日：2010-02-04
申请号：US12202642
申请日：2008-09-02
申请人： Nobuyuki NEGISHI , Masaru Izawa , Kenji Maeda
发明人： Nobuyuki NEGISHI , Masaru Izawa , Kenji Maeda
IPC分类号： G01L11/02
CPC分类号： H01J37/32642 , H01J37/32935 , H01J37/3299
摘要： To monitor the thickness of a focus ring consumed during wafer processing. A plasma processing apparatus includes a vacuum chamber 1, workpiece mounting means 5, high frequency electric power introducing means 4 and radio-frequency bias electric power introducing means 7 and processes a surface of a workpiece 6 using a plasma that is converted from a gas introduced into the vacuum chamber 1 by the action of a high frequency electric power introduced by the high frequency electric power introducing means 4. The plasma processing apparatus further includes an annular member 11 surrounding the workpiece 6 mounted on the workpiece mounting means 5, and a pair of tubes having an aspect ratio of 3 or higher and disposed on a side wall of the vacuum chamber 1 to face each other. Each tube is vacuum-sealed at a tip end thereof with a glass material. One of the tubes has a light source 15 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material, and the other tube has light receiving means 16 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material. The light receiving means 16 receives light passing across the surface of the annular member 11.
摘要翻译：监视在晶片处理期间消耗的聚焦环的厚度。等离子体处理装置包括真空室1，工件安装装置5，高频电力引入装置4和射频偏置电力引入装置7，并使用从引入的气体转换的等离子体处理工件6的表面通过高频电力引入装置4引入的高频电力进入真空室1.等离子体处理装置还包括环绕安装在工件安装装置5上的工件6的环形构件11和一对的长径比为3或更高并且设置在真空室1的侧壁上以彼此面对的管。每个管在其末端用玻璃材料进行真空密封。其中一个管具有面向玻璃材料的气氛侧的真空室的内部设置的光源15，另一个管具有光接收装置16，该接收装置16面对真空室的大气侧的内部玻璃材料。光接收装置16接收穿过环形构件11的表面的光。

7. 发明申请

US20090301392A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工设备
公开(公告)号：US20090301392A1
公开(公告)日：2009-12-10
申请号：US12191373
申请日：2008-08-14
申请人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Kenji Maeda
发明人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Kenji Maeda
IPC分类号： C23C14/00
CPC分类号： C23C16/4401 , H01L21/67201 , H01L21/67745
摘要： There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.
摘要翻译：通过增加真空处理装置中的气体扩散器安装部的维护的便利，可以减少异物发生量的真空处理装置。用于容纳气体扩散器的气体扩散室安装在真空处理装置中。

8. 发明申请

US20090294060A1 Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
标题翻译：具有降低粒子污染的半导体器件制造装置
公开(公告)号：US20090294060A1
公开(公告)日：2009-12-03
申请号：US12539140
申请日：2009-08-11
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/465
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译：半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为处理。温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

9. 发明申请

US20090060702A1 METHOD FOR TRANSPORTING OBJECT TO BE PROCESSED IN SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：运输半导体制造设备中要处理的物体的方法
公开(公告)号：US20090060702A1
公开(公告)日：2009-03-05
申请号：US12035780
申请日：2008-02-22
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa
IPC分类号： H01L21/673
CPC分类号： H01L21/67748 , H01L21/67017 , H01L21/6719 , H01L21/67196
摘要： In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber.
摘要翻译：在包括处理室的半导体制造装置中，向处理室供给气体的装置，用于对处理室进行减压的排气装置，输送室，向输送室供给气体的装置，以及用于使输送室减压的排气装置，处理室中的压力为10〜50Pa，输送室内的压力被设定为处理室的正压，处理室与输送室之间的压差为10Pa以下，流量为供给到处理室的气体是供给至运送室的气体的流量的两倍以上。

10. 发明申请

US20080149590A1 Substrate-Holder, Etching Method of the Substrate, and the Fabrication Method of a Magnetic Recording Media 审中-公开
标题翻译：基板保持器，基板的蚀刻方法以及磁记录介质的制造方法
公开(公告)号：US20080149590A1
公开(公告)日：2008-06-26
申请号：US11942849
申请日：2007-11-20
申请人： Kenji Maeda , Makoto Satake , Masaru Izawa
发明人： Kenji Maeda , Makoto Satake , Masaru Izawa
IPC分类号： C23F1/04 , C23F1/08
CPC分类号： H01L21/67069 , B82Y10/00 , C03C15/00 , G11B5/743 , G11B5/82 , G11B5/8404 , G11B5/855 , H01J2237/20 , H01L21/6875 , H01L21/68771 , H01L21/68785
摘要： A substrate holder that forms a concavo-convex pattern on recording layers of both of front and back sides of a magnetic recording media is provided. The substrate holder includes an insulator member having a concave portion that holds the etching substrate and a through-hole formed just below the concave portion, and a conductive member having a convex portion that is engaged with the through-hole. A gap is defined between a front side of the convex portion and the bottom surface of the substrate in a state where the etching substrate is mounted on the concave portion, and a thickness of the gap is equal to or higher than 0.5 mm and equal to or lower than 1 mm, and a thickness of the insulator member is equal to or higher than 1 mm and equal to or lower than 15 mm.
摘要翻译：提供了一种在磁记录介质的前后两面的记录层上形成凹凸图案的基板保持件。基板保持器包括绝缘体构件，其具有保持蚀刻基板的凹部和形成在凹部下方的通孔，以及具有与通孔配合的凸部的导电构件。在蚀刻基板安装在凹部上的状态下，在凸部的前侧和基板的底面之间限定间隙，并且间隙的厚度等于或大于等于或等于0.5mm 或小于1mm，并且绝缘体构件的厚度等于或大于1mm且等于或小于15mm。

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