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1. 发明申请

US20090212352A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090212352A1
公开(公告)日：2009-08-27
申请号：US12391953
申请日：2009-02-24
申请人： Kenji AOYAMA , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
发明人： Kenji AOYAMA , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
IPC分类号： H01L29/792 , H01L21/28 , H01L29/788
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/764 , H01L29/66825
摘要： A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity.
摘要翻译：半导体存储器件具有半导体衬底，在半导体衬底上以预定间隔形成的多个字线，每个字线具有栅极绝缘膜，电荷存储层，第一绝缘膜和控制栅电极，它们被堆叠并且包括位于栅极绝缘膜的高度之上的金属氧化物层，覆盖字线的一侧的第二绝缘膜和字线之间的半导体衬底的表面，并且具有15nm的膜厚度或并且形成在彼此相邻的字线之间的第三绝缘膜，使得低于金属氧化物层的电平的区域具有空腔。

2. 发明申请

US20110147822A1 Semiconductor memory device and method for manufacturing the same 审中-公开
公开(公告)号：US20110147822A1
公开(公告)日：2011-06-23
申请号：US12929894
申请日：2011-02-23
申请人： Kenji Aoyama , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
发明人： Kenji Aoyama , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/764 , H01L29/40114 , H01L29/66825
摘要： A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity.

3. 发明授权

US07915156B2 Semiconductor memory device and method for manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07915156B2
公开(公告)日：2011-03-29
申请号：US12391953
申请日：2009-02-24
申请人： Kenji Aoyama , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
发明人： Kenji Aoyama , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/764 , H01L29/66825
摘要： A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity.
摘要翻译：半导体存储器件具有半导体衬底，在半导体衬底上以预定间隔形成的多个字线，每个字线具有栅极绝缘膜，电荷存储层，第一绝缘膜和控制栅电极，它们被堆叠并且包括位于栅极绝缘膜的高度之上的金属氧化物层，覆盖字线的一侧的第二绝缘膜和字线之间的半导体衬底的表面，并且具有15nm的膜厚度或并且形成在彼此相邻的字线之间的第三绝缘膜，使得低于金属氧化物层的电平的区域具有空腔。

4. 发明申请

US20100248431A1 METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE 有权
标题翻译：制造非易失存储器件的方法
公开(公告)号：US20100248431A1
公开(公告)日：2010-09-30
申请号：US12726749
申请日：2010-03-18
申请人： Kazuhito NISHITANI , Eiji Ito , Machiko Tsukiji , Hiroyuki Fukumizu , Naoya Hayamizu , Katsuhiro Sato
发明人： Kazuhito NISHITANI , Eiji Ito , Machiko Tsukiji , Hiroyuki Fukumizu , Naoya Hayamizu , Katsuhiro Sato
IPC分类号： H01L21/822 , H01L21/02
CPC分类号： H01L27/101 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer having a lower etching rate than the sacrifice layer on the second electrode film; processing the second electrode film into a strip shape aligning in the second direction nonparallel to the first direction by using the mask layer as a mask; removing a portion of the first storage unit film exposed from the sacrifice layer by using the mask layer as a mask to process the first storage unit film into a columnar shape including a side wall along the first direction and a side wall along the second direction; removing the sacrifice layer to expose the first storage unit film having been covered with the sacrifice layer; and removing the exposed first storage unit film.
摘要翻译：一种非易失性存储装置的制造方法，包括：沿第一方向排列的多个第一电极; 多个第二电极，在与第一方向不平行的第二方向上排列并设置在第一电极之上; 以及第一存储单元，设置在所述第一电极和所述第二电极之间，并且包括第一存储层，所述第一存储层的电阻通过施加的电场和施加的电流中的至少一个而变化，所述方法包括：形成第一电极的电极膜和在基板的主表面上形成第一存储单元的第一存储单元膜; 将所述第一电极膜和所述第一存储单元膜处理成沿所述第一方向对准的条形; 在经处理的第一电极膜之间和处理的第一存储单元膜之间埋设牺牲层; 在所述第一存储单元膜和所述牺牲层上形成形成第二电极的第二电极膜; 形成具有比所述第二电极膜上的牺牲层更低的蚀刻速率的掩模层; 通过使用掩模层作为掩模，将第二电极膜处理成沿与第一方向不平行的第二方向对准的条形; 通过使用掩模层作为掩模去除从牺牲层暴露的第一存储单元膜的一部分，以将第一存储单元膜处理成包括沿着第一方向的侧壁和沿着第二方向的侧壁的柱状; 去除牺牲层以暴露已经被牺牲层覆盖的第一存储单元膜; 以及去除所暴露的第一存储单元膜。

5. 发明授权

US07586638B2 Print control apparatus and printing system 有权
标题翻译：打印控制装置和打印系统
公开(公告)号：US07586638B2
公开(公告)日：2009-09-08
申请号：US11409291
申请日：2006-04-21
申请人： Masaki Hyogo , Eiji Ito , Tomohiro Kodama
发明人： Masaki Hyogo , Eiji Ito , Tomohiro Kodama
IPC分类号： G06K15/00
CPC分类号： G06F13/28 , G06F3/1204 , G06F3/1211 , G06F3/1237 , G06F3/1284
摘要： Systems and methods for reliably canceling a DMA transfer mode and accelerating printer initialization. A host device 3 for controlling a printer having a DMA transfer mode for printing by transferring image data associated with a received image print command to a print buffer 15. The host device 3 has a print data generating unit 33 for generating the image print command, memory 35 for storing the data size of the image data associated with the image print command generated by the print data generating unit 33, and a printer control unit 34 for sending to the printer 1 an initialization command having null data of the data size stored in memory 35 added to the beginning of the initialization command.
摘要翻译：用于可靠地取消DMA传输模式并加速打印机初始化的系统和方法。用于通过将与接收到的图像打印命令相关联的图像数据传送到打印缓冲器15来控制具有用于打印的DMA传送模式的打印机的主机设备3.主机设备3具有用于生成图像打印命令的打印数据生成单元33，用于存储与由打印数据生成单元33生成的图像打印命令相关联的图像数据的数据大小的存储器35以及打印机控制单元34，用于向打印机1发送存储有数据大小的空数据的初始化命令内存35添加到初始化命令的开头。

6. 发明授权

US07242399B2 Capacitive load drive circuit and plasma display apparatus 失效
标题翻译：电容负载驱动电路和等离子体显示装置
公开(公告)号：US07242399B2
公开(公告)日：2007-07-10
申请号：US10298607
申请日：2002-11-19
申请人： Makoto Onozawa , Hideaki Ohki , Masaki Kamada , Kazuyoshi Yamada , Eiji Ito
发明人： Makoto Onozawa , Hideaki Ohki , Masaki Kamada , Kazuyoshi Yamada , Eiji Ito
IPC分类号： G09G5/00
CPC分类号： G09G3/2965 , G09G3/294 , G09G2330/02 , G09G2330/021
摘要： A low-cost capacitive load drive circuit, in which a reference voltage, a first voltage, and a second voltage are supplied to a capacitive load, and a plasma display apparatus using it, have been disclosed. The capacitive load drive circuit comprises a reference voltage switch the breakdown voltage of which is properly adjusted, a first switch, a reference voltage phase adjusting circuit, and a first phase adjusting circuit, and malfunctions due to the difference in switching characteristics can be prevented from occurring even when devices of different breakdown voltages are used.
摘要翻译：已经公开了向电容性负载提供参考电压，第一电压和第二电压的低成本电容性负载驱动电路以及使用它的等离子体显示装置。容性负载驱动电路包括其击穿电压适当调整的参考电压开关，第一开关，参考电压相位调整电路和第一相位调整电路，并且可以防止由于开关特性的差异导致的故障即使使用不同击穿电压的器件也会发生。

7. 发明授权

US07227516B2 Plasma display apparatus 失效
标题翻译：等离子显示装置
公开(公告)号：US07227516B2
公开(公告)日：2007-06-05
申请号：US10844516
申请日：2004-05-13
申请人： Tomokatsu Kishi , Yoshikazu Kanazawa , Eiji Ito , Takahiro Takamori , Noriaki Setoguchi
发明人： Tomokatsu Kishi , Yoshikazu Kanazawa , Eiji Ito , Takahiro Takamori , Noriaki Setoguchi
IPC分类号： G09G3/28 , H01J17/49
CPC分类号： G09G3/2927 , G09G3/2813 , G09G3/293 , G09G3/294 , G09G3/2986 , G09G3/299
摘要： The plasma display apparatus, in which the light emission efficiency is improved, has been disclosed. The fourth electrodes, which extend in the same direction of the first electrodes (X electrode) and the second electrodes (Y electrodes) and are exposed into the discharge space, are provided between the first and the second electrodes where the sustaining discharge is carried out, and when the sustain action is carried out, the fixed voltage between the voltage applied to the first electrode and that applied to the second electrode is applied to the fourth electrode provided between the first and the second electrodes where the sustain action is carried out in order to make the electric field between the first and the second electrodes uniform.
摘要翻译：已经公开了提高发光效率的等离子体显示装置。在第一电极和第二电极之间沿第一电极（X电极）和第二电极（Y电极）的相同方向延伸并暴露于放电空间的第四电极设置在执行维持放电的第一和第二电极之间并且当执行维持动作时，施加到第一电极的电压与施加到第二电极的电压之间的固定电压施加到设置在第一和第二电极之间的第四电极，其中进行维持动作以使第一和第二电极之间的电场均匀。

8. 发明申请

US20070003881A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070003881A1
公开(公告)日：2007-01-04
申请号：US11453087
申请日：2006-06-15
申请人： Eiji Ito , Hideyuki Kinoshita , Tetsuya Kamigaki , Koji Hashimoto
发明人： Eiji Ito , Hideyuki Kinoshita , Tetsuya Kamigaki , Koji Hashimoto
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.
摘要翻译：一种制造半导体器件的方法包括在下面的区域上形成以第一间距布置的多个虚拟线图案，形成具有形成在虚拟线图案的长边上的预定掩模部分的第一掩模图案，每个第一掩模图案具有闭环形状并且围绕每个虚拟线图案，去除虚拟线图案，形成具有第一图案部分的第二掩模图案，该第一图案部分覆盖第一掩模图案的端部和位于相邻的第一掩模图案的端部之间的端部部分端部，使用第一掩模图案和第二掩模图案作为掩模蚀刻下面的区域，以形成各自位于相邻的预定掩模部分之间的沟槽，并且用预定的材料填充沟槽。

9. 发明申请

US20060238804A1 Print control apparatus and printing system 有权
标题翻译：打印控制装置和打印系统
公开(公告)号：US20060238804A1
公开(公告)日：2006-10-26
申请号：US11409291
申请日：2006-04-21
申请人： Masaki Hyogo , Eiji Ito , Tomohiro Kodama
发明人： Masaki Hyogo , Eiji Ito , Tomohiro Kodama
IPC分类号： G06F3/12
CPC分类号： G06F13/28 , G06F3/1204 , G06F3/1211 , G06F3/1237 , G06F3/1284
摘要： Systems and methods for reliably canceling a DMA transfer mode and accelerating printer initialization. A host device 3 for controlling a printer having a DMA transfer mode for printing by transferring image data associated with a received image print command to a print buffer 15. The host device 3 has a print data generating unit 33 for generating the image print command, memory 35 for storing the data size of the image data associated with the image print command generated by the print data generating unit 33, and a printer control unit 34 for sending to the printer 1 an initialization command having null data of the data size stored in memory 35 added to the beginning of the initialization command.
摘要翻译：用于可靠地取消DMA传输模式并加速打印机初始化的系统和方法。用于通过将与接收到的图像打印命令相关联的图像数据传送到打印缓冲器15来控制具有用于打印的DMA传送模式的打印机的主机设备3。主机3具有用于生成图像打印命令的打印数据生成单元33，用于存储与由打印数据生成单元33生成的图像打印命令相关联的图像数据的数据大小的存储器35和打印机控制单元34 用于向打印机1发送具有添加到初始化命令的开头的存储器35中存储的数据大小的空数据的初始化命令。

10. 发明授权

US06842159B2 Plasma display apparatus 失效
标题翻译：等离子显示装置
公开(公告)号：US06842159B2
公开(公告)日：2005-01-11
申请号：US09962367
申请日：2001-09-26
申请人： Tomokatsu Kishi , Yoshikazu Kanazawa , Eiji Ito , Takahiro Takamori , Noriaki Setoguchi
发明人： Tomokatsu Kishi , Yoshikazu Kanazawa , Eiji Ito , Takahiro Takamori , Noriaki Setoguchi
IPC分类号： G09G3/20 , G09G3/288 , G09G3/291 , G09G3/292 , G09G3/293 , G09G3/294 , G09G3/296 , G09G3/298 , G09G3/299 , H01J11/12 , H01J11/14 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/32 , H01J11/34 , G09G3/28
CPC分类号： G09G3/2927 , G09G3/2813 , G09G3/293 , G09G3/294 , G09G3/2986 , G09G3/299
摘要： The plasma display apparatus, in which the light emission efficiency is improved, has been disclosed. The fourth electrodes, which extend in the same direction of the first electrodes (X electrode) and the second electrodes (Y electrodes) and are exposed into the discharge space, are provided between the first and the second electrodes where the sustaining discharge is carried out, and when the sustain action is carried out, the fixed voltage between the voltage applied to the first electrode and that applied to the second electrode is applied to the fourth electrode provided between the first and the second electrodes where the sustain action is carried out in order to make the electric field between the first and the second electrodes uniform.
摘要翻译：已经公开了提高发光效率的等离子体显示装置。在第一电极和第二电极之间沿第一电极（X电极）和第二电极（Y电极）的相同方向延伸并暴露于放电空间的第四电极设置在执行维持放电的第一和第二电极之间并且当执行维持动作时，施加到第一电极的电压与施加到第二电极的电压之间的固定电压施加到设置在第一和第二电极之间的第四电极，其中进行维持动作以使第一和第二电极之间的电场均匀。

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