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1. 发明授权

US08153488B2 Method for manufacturing nonvolatile storage device 有权
标题翻译：非易失性存储装置的制造方法
公开(公告)号：US08153488B2
公开(公告)日：2012-04-10
申请号：US12726749
申请日：2010-03-18
申请人： Kazuhito Nishitani , Eiji Ito , Machiko Tsukiji , Hiroyuki Fukumizu , Naoya Hayamizu , Katsuhiro Sato
发明人： Kazuhito Nishitani , Eiji Ito , Machiko Tsukiji , Hiroyuki Fukumizu , Naoya Hayamizu , Katsuhiro Sato
IPC分类号： H01L21/336
CPC分类号： H01L27/101 , H01L27/24 , H01L45/04 , H01L45/145
摘要： Manufacturing a nonvolatile storage device including: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a substrate; processing the first electrode film and the first storage unit film into a strip shape; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer on the second electrode film; processing the second electrode film into a strip shape using the mask layer; removing a portion of the first storage unit film exposed from the sacrifice layer using the mask layer processing the first storage unit film into a columnar shape, removing the sacrifice layer exposing the first storage unit film; and removing the exposed first storage unit film.
摘要翻译：制造非易失性存储装置，包括：在基板上堆叠形成第一电极的第一电极膜和形成第一存储单元的第一存储单元膜; 将第一电极膜和第一存储单元膜加工成带状; 在经处理的第一电极膜之间和处理的第一存储单元膜之间埋设牺牲层; 在所述第一存储单元膜和所述牺牲层上形成形成第二电极的第二电极膜; 在所述第二电极膜上形成掩模层; 使用掩模层将第二电极膜加工成带状; 使用将所述第一存储单元膜处理成柱状的掩模层来除去从所述牺牲层暴露的所述第一存储单元膜的一部分，去除暴露所述第一存储单元膜的所述牺牲层; 以及去除所暴露的第一存储单元膜。

2. 发明申请

US20100248431A1 METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE 有权
标题翻译：制造非易失存储器件的方法
公开(公告)号：US20100248431A1
公开(公告)日：2010-09-30
申请号：US12726749
申请日：2010-03-18
申请人： Kazuhito NISHITANI , Eiji Ito , Machiko Tsukiji , Hiroyuki Fukumizu , Naoya Hayamizu , Katsuhiro Sato
发明人： Kazuhito NISHITANI , Eiji Ito , Machiko Tsukiji , Hiroyuki Fukumizu , Naoya Hayamizu , Katsuhiro Sato
IPC分类号： H01L21/822 , H01L21/02
CPC分类号： H01L27/101 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer having a lower etching rate than the sacrifice layer on the second electrode film; processing the second electrode film into a strip shape aligning in the second direction nonparallel to the first direction by using the mask layer as a mask; removing a portion of the first storage unit film exposed from the sacrifice layer by using the mask layer as a mask to process the first storage unit film into a columnar shape including a side wall along the first direction and a side wall along the second direction; removing the sacrifice layer to expose the first storage unit film having been covered with the sacrifice layer; and removing the exposed first storage unit film.
摘要翻译：一种非易失性存储装置的制造方法，包括：沿第一方向排列的多个第一电极; 多个第二电极，在与第一方向不平行的第二方向上排列并设置在第一电极之上; 以及第一存储单元，设置在所述第一电极和所述第二电极之间，并且包括第一存储层，所述第一存储层的电阻通过施加的电场和施加的电流中的至少一个而变化，所述方法包括：形成第一电极的电极膜和在基板的主表面上形成第一存储单元的第一存储单元膜; 将所述第一电极膜和所述第一存储单元膜处理成沿所述第一方向对准的条形; 在经处理的第一电极膜之间和处理的第一存储单元膜之间埋设牺牲层; 在所述第一存储单元膜和所述牺牲层上形成形成第二电极的第二电极膜; 形成具有比所述第二电极膜上的牺牲层更低的蚀刻速率的掩模层; 通过使用掩模层作为掩模，将第二电极膜处理成沿与第一方向不平行的第二方向对准的条形; 通过使用掩模层作为掩模去除从牺牲层暴露的第一存储单元膜的一部分，以将第一存储单元膜处理成包括沿着第一方向的侧壁和沿着第二方向的侧壁的柱状; 去除牺牲层以暴露已经被牺牲层覆盖的第一存储单元膜; 以及去除所暴露的第一存储单元膜。

3. 发明授权

US08519371B2 Nonvolatile memory device and method for manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08519371B2
公开(公告)日：2013-08-27
申请号：US12876870
申请日：2010-09-07
申请人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
发明人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/1666 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.
摘要翻译：根据一个实施例，非易失性存储器件包括衬底，第一电极，第二电极和存储器。第一电极设置在基板上。第二电极在第一电极上交叉。存储部设置在第一电极和第二电极之间。与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积第一电极和第二电极通过交叉相互相对。

4. 发明申请

US20110037045A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20110037045A1
公开(公告)日：2011-02-17
申请号：US12876870
申请日：2010-09-07
申请人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
发明人： Hiroyuki Fukumizu , Naoya Hayamizu , Makiko Tange
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/1666 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.
摘要翻译：根据一个实施例，非易失性存储器件包括衬底，第一电极，第二电极和存储器。第一电极设置在基板上。第二电极在第一电极上交叉。存储部设置在第一电极和第二电极之间。与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积第一电极和第二电极通过交叉相互相对。

5. 发明授权

US08236161B2 Apparatus for electrolyzing sulfuric acid, method of performing electrolysis, and apparatus for processing a substrate 有权
标题翻译：硫酸电解装置，电解方法以及基板处理装置
公开(公告)号：US08236161B2
公开(公告)日：2012-08-07
申请号：US12274681
申请日：2008-11-20
申请人： Nobuo Kobayashi , Yukihiro Shibata , Naoya Hayamizu , Masaaki Kato
发明人： Nobuo Kobayashi , Yukihiro Shibata , Naoya Hayamizu , Masaaki Kato
IPC分类号： C25B1/28 , C23G1/00
CPC分类号： C25B1/285 , H01L21/67051
摘要： An apparatus for electrolyzing sulfuric acid, the apparatus comprising an electrolytic cell comprising a cathode chamber having a cathode and an anode chamber having an anode, the cathode chamber and the anode chamber being separated by a diaphragm, a sulfuric acid tank configured to store the sulfuric acid, a supply pipe connecting the sulfuric acid tank to an inlet port of the anode chamber, a connection pipe connecting an outlet port of the cathode chamber to the inlet port of the anode chamber, a first supply pump provided on the supply pipe and configured to supply the sulfuric acid from the sulfuric acid tank to the cathode chamber through the supply pipe, and a drain pipe connected to an outlet port of the anode chamber and configured to supply to a solution tank a solution containing an oxidizing agent generated by electrolysis in the anode chamber.
摘要翻译：一种用于电解硫酸的设备，该设备包括电解池，该电解池包括具有阴极的阴极室和具有阳极的阳极室，阴极室和阳极室由隔膜隔开;硫酸罐，其构造成储存硫酸酸，将硫酸罐连接到阳极室的入口的供给管，将阴极室的出口与阳极室的入口连接的连接管，设置在供给管上的第一供给泵，通过供给管将硫酸从硫酸罐供给到阴极室，以及排水管，其连接到阳极室的出口，并配置成向溶液罐供给含有通过电解产生的氧化剂的溶液阳极室。

6. 发明授权

US08141567B2 Apparatus and method for photoresist removal processing 有权
标题翻译：光刻胶去除处理的设备和方法
公开(公告)号：US08141567B2
公开(公告)日：2012-03-27
申请号：US11625081
申请日：2007-01-19
申请人： Takahiko Wakatsuki , Naoya Hayamizu , Hiroshi Fujita , Akiko Saito , Toshihide Hayashi , Yukinobu Nishibe , Tsutomu Makino
发明人： Takahiko Wakatsuki , Naoya Hayamizu , Hiroshi Fujita , Akiko Saito , Toshihide Hayashi , Yukinobu Nishibe , Tsutomu Makino
IPC分类号： B08B3/04
CPC分类号： B08B3/00 , B08B7/00 , B08B2230/01 , G03F7/427
摘要： A processing apparatus includes: a tank configured to store water; vapor generating unit configured to turn the water supplied from the tank into vapor; a processing chamber in which vapor supplied from the vapor generating unit is used to remove residues from a workpiece; cooling unit; and filtering unit. The cooling unit cools waste liquid ejected from the processing chamber. The filtering unit is provided between the cooling unit and the tank, and the filtering unit filters the waste liquid cooled in the cooling unit. A processing method includes: supplying vapor into a processing chamber; removing residues from a workpiece using the vapor; cooling waste liquid containing the removed residues to precipitate the residues as solids; and filtering the waste liquid containing the precipitates.
摘要翻译：一种处理装置，包括：储存器，用于储存水; 蒸汽发生单元，其构造成将从所述罐供给的水转化为蒸气; 处理室，其中从蒸汽发生单元供应的蒸汽用于从工件中除去残余物; 冷却单元和过滤单元。冷却单元冷却从处理室喷出的废液。过滤单元设置在冷却单元和水箱之间，过滤单元对冷却单元中冷却的废液进行过滤。一种处理方法包括：将蒸气供应到处理室中; 使用蒸气从工件去除残留物; 冷却含有去除的残余物的废液以将残留物沉淀为固体; 并过滤含有沉淀物的废液。

7. 发明申请

US20110073490A1 CLEANING METHOD, CLEANING SYSTEM, AND METHOD FOR MANUFACTURING MICROSTRUCTURE 审中-公开
标题翻译：清洁方法，清洁系统和制造微结构的方法
公开(公告)号：US20110073490A1
公开(公告)日：2011-03-31
申请号：US12880549
申请日：2010-09-13
申请人： Naoya Hayamizu , Makiko Tange , Masaaki Kato , Hiroki Domon , Yusuke Ogawa , Yoshiaki Kurokawa , Nobuo Kobayashi
发明人： Naoya Hayamizu , Makiko Tange , Masaaki Kato , Hiroki Domon , Yusuke Ogawa , Yoshiaki Kurokawa , Nobuo Kobayashi
IPC分类号： C25F1/00 , C25F7/00
CPC分类号： C25B1/28 , G03F7/423
摘要： According to one embodiment, a cleaning method is disclosed. The method can produce an oxidizing solution including an oxidizing substance by electrolyzing a dilute sulfuric acid solution. In addition, the method can supply a highly concentrated inorganic acid solution individually, sequentially, or substantially simultaneously with the oxidizing solution to a surface of an object to be cleaned.
摘要翻译：根据一个实施例，公开了一种清洁方法。该方法可以通过电解稀硫酸溶液来产生包含氧化物质的氧化溶液。此外，该方法可以将高度浓缩的无机酸溶液与氧化溶液单独，依次或基本上同时地供给到待清洁物体的表面。

8. 发明申请

US20090325390A1 Cleaning method by electrolytic sulfuric acid and manufacturing method of semiconductor device 有权
标题翻译：电解硫酸的清洗方法及半导体装置的制造方法
公开(公告)号：US20090325390A1
公开(公告)日：2009-12-31
申请号：US12459133
申请日：2009-06-26
申请人： Hiroki Domon , Yusuke Ogawa , Masaaki Kato , Takamichi Kishi , Naoya Hayamizu , Makiko Tange , Yoshiaki Kurokawa , Nobuo Kobayashi
发明人： Hiroki Domon , Yusuke Ogawa , Masaaki Kato , Takamichi Kishi , Naoya Hayamizu , Makiko Tange , Yoshiaki Kurokawa , Nobuo Kobayashi
IPC分类号： H01L21/20 , C25B1/22 , C11D7/34
CPC分类号： C11D11/007 , C11D7/08 , C11D11/0047 , C25B1/285 , G03F7/423 , H01L21/31133
摘要： The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.
摘要翻译：电解硫酸的清洗方法以及半导体装置的制造方法，其特征在于，包括：从硫酸电解槽向外部供给第一硫酸溶液，在硫酸电解液中形成含有第一电解硫酸的氧化剂的工序细胞; 其中比所述先前供应的所述第一硫酸溶液浓度高的第二硫酸溶液从外部供应到所述硫酸电解池的过程; 所述第二硫酸溶液和所述第一电解硫酸在所述硫酸电解池中混合; 并且进行电解以在所述硫酸电解池中形成包含含有硫酸和氧化剂的第二电解硫酸的清洗溶液，以及对所述清洁溶液进行清洁对象的清洁处理的处理。

9. 发明申请

US20080053478A1 SUBSTRATE-PROCESSING METHOD AND METHOD OF MANUFACTURING ELECTRONIC DEVICE 审中-公开
标题翻译：基板处理方法及制造电子器件的方法
公开(公告)号：US20080053478A1
公开(公告)日：2008-03-06
申请号：US11681368
申请日：2007-03-02
申请人： Yukihiro Shibata , Naoya Hayamizu
发明人： Yukihiro Shibata , Naoya Hayamizu
IPC分类号： C23G1/02
CPC分类号： H01L21/67086 , G03F7/423
摘要： A method of manufacturing an electronic device includes dipping a substrate in a solution containing sulfuric acid, which is accommodated in a processing vessel. An aqueous solution of hydrogen peroxide supplies the sulfuric acid accommodated in the processing vessel for generating peroxomonosulfuric acid (Caro's acid). Therefore, an organic material present on the surface of the substrate is removed by the action of Caro's acid within the processing vessel. The time for supplying the aqueous solution of hydrogen peroxide into the processing vessel is set on the basis of the change with time in the concentration of Caro's acid measured in advance so as to permit the peak in the concentration of Caro's acid to appear while the substrate is kept dipped in the processing solution.
摘要翻译：制造电子器件的方法包括将基底浸入容纳在处理容器中的含有硫酸的溶液中。过氧化氢水溶液为容纳在处理容器中的硫酸提供产生过氧硫酸（卡罗酸）。因此，通过Caro酸在处理容器内的作用去除存在于基板表面上的有机材料。将过氧化氢水溶液供给到处理容器中的时间是基于事先测定的Caro酸浓度随时间的变化而设定的，以使Caro酸的浓度峰值出现，同时衬底保持浸在处理液中。

10. 发明申请

US20070246097A1 PROCESSING APPARATUS AND METHOD 有权
标题翻译：处理装置和方法
公开(公告)号：US20070246097A1
公开(公告)日：2007-10-25
申请号：US11625592
申请日：2007-01-22
申请人： Takahiko Wakatsuki , Naoya Hayamizu , Hiroshi Fujita , Akiko Saito , Toshihide Hayashi , Yukinobu Nishibe
发明人： Takahiko Wakatsuki , Naoya Hayamizu , Hiroshi Fujita , Akiko Saito , Toshihide Hayashi , Yukinobu Nishibe
IPC分类号： F17D3/00
CPC分类号： B08B3/022 , B08B7/00 , H01L21/67028 , H01L21/67051 , Y10T137/0318
摘要： A processing apparatus includes: a processing chamber configured to contain a workpiece; a first nozzle provided in the processing chamber, the first nozzle discharging vapor onto the workpiece; a wall enclosing the processing chamber; a fluid channel provided inside the wall; a fluid inlet; and a fluid outlet. The fluid inlet is provided in communication with the fluid channel. The fluid outlet is provided in communication with the fluid channel, where a fluid flows into the fluid inlet, passes through the fluid channel, and flows out of the fluid outlet. A processing method for processing a workpiece moving in a processing chamber, the processing method includes: discharging a vapor from a first nozzle toward the workpiece while flowing a fluid through a fluid channel which is provided inside a wall, the wall enclosing the processing chamber.
摘要翻译：一种处理装置，包括：处理室，被配置为容纳工件; 设置在所述处理室中的第一喷嘴，所述第一喷嘴将蒸气喷射到所述工件上; 封闭处理室的墙壁; 设置在壁内的流体通道; 流体入口; 和流体出口。流体入口设置成与流体通道连通。流体出口设置成与流体通道连通，流体流入流体入口，通过流体通道并从流体出口流出。一种用于处理在处理室中移动的工件的处理方法，所述处理方法包括：使流体从第一喷嘴朝向工件排出，同时使流体流过设置在壁内部的流体通道，所述流体通道围绕处理室。

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