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    • 5. 发明授权
    • Nonvolatile semiconductor memory devices with charge injection corner
    • 具有电荷注入角的非易失性半导体存储器件
    • US07915666B2
    • 2011-03-29
    • US12124143
    • 2008-05-20
    • Kan YasuiTetsuya IshimaruDigh HisamotoYasuhiro Shimamoto
    • Kan YasuiTetsuya IshimaruDigh HisamotoYasuhiro Shimamoto
    • H01L29/792
    • H01L29/792G11C16/0425G11C16/10H01L27/11526H01L27/11546H01L29/42344
    • An erase method where a corner portion on which an electric field concentrates locally is provided on the memory gate electrode, and charges in the memory gate electrode are injected into a charge trap film in a gate dielectric with Fowler-Nordheim tunneling operation is used. Since current consumption at the time of erase can be reduced by the Fowler-Nordheim tunneling, a power supply circuit area of a memory module can be reduced. Since write disturb resistance can be improved, a memory array area can be reduced by adopting a simpler memory array configuration. Owing to both the effects, an area of the memory module can be largely reduced, so that manufacturing cost can be reduced. Further, since charge injection centers of write and erase coincide with each other, so that (program and erase) endurance is improved.
    • 在存储栅电极上设置有局部集中电场的角部的擦除方法,并且使用Fowler-Nordheim隧道操作将存储栅电极中的电荷注入栅极电介质中的电荷陷阱膜。 由于通过Fowler-Nordheim隧道可以减少擦除时的电流消耗,因此可以减少存储器模块的电源电路区域。 由于可以提高写入干扰电阻,所以可以通过采用更简单的存储器阵列配置来减少存储器阵列区域。 由于这两个效果,可以大大减少存储器模块的面积,从而可以降低制造成本。 此外,由于写入和擦除的电荷注入中心彼此一致,所以(编程和擦除)耐久性得到改善。