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1. 发明申请

US20100084662A1 SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS OVERLAPPING LENGTHWISE ON A STRUCTURE 审中-公开
标题翻译：使用多个激光束的半导体结构处理在结构上重叠长度
公开(公告)号：US20100084662A1
公开(公告)日：2010-04-08
申请号：US12633123
申请日：2009-12-08
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
IPC分类号： H01L29/04 , H01L21/00 , B23K26/067 , B23K26/36
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/76894 , H01L23/5258 , H01L27/1052 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
摘要翻译：方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。该结构具有表面，宽度和长度。随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。每个光束点至少包含所选链接的宽度。第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域。总区域大于第一束斑，并且大于第二束斑。该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

2. 发明授权

US07633034B2 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure 有权
标题翻译：使用在结构上纵向重叠的多个激光束点的半导体结构处理
公开(公告)号：US07633034B2
公开(公告)日：2009-12-15
申请号：US11051261
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/76894 , H01L23/5258 , H01L27/1052 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
摘要翻译：方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。该结构具有表面，宽度和长度。随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。每个光束点至少包含所选链接的宽度。第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域。总区域大于第一束斑，并且大于第二束斑。该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

3. 发明授权

US07935941B2 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures 有权
标题翻译：使用在非相邻结构上在轴上间隔开的多个激光束点的半导体结构处理
公开(公告)号：US07935941B2
公开(公告)日：2011-05-03
申请号：US11051263
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Frank G. Evans
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Frank G. Evans
IPC分类号： B23K26/08 , B23K26/38
CPC分类号： B23K26/067
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。该方法将第一和第二激光束引导到行中不相邻的第一和第二结构。该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。

4. 发明授权

US07687740B2 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权
标题翻译：使用多个横向间隔开的激光束点进行多次打击的半导体结构处理
公开(公告)号：US07687740B2
公开(公告)日：2010-03-30
申请号：US11051262
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译：方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构或在与第一行不同的第二行上的两个相邻结构之间。所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构，并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

5. 发明申请

US20080121627A1 Methods and systems for semiconductor structure processing using multiple laser beam spots 有权
标题翻译：使用多个激光束点进行半导体结构处理的方法和系统
公开(公告)号：US20080121627A1
公开(公告)日：2008-05-29
申请号：US11980872
申请日：2007-10-30
申请人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
发明人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
IPC分类号： B23K26/38 , B23K26/03
CPC分类号： H01L23/5258 , B23K26/042 , B23K26/0613 , B23K26/067 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或其中的结构。结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。

6. 发明授权

US08383982B2 Methods and systems for semiconductor structure processing using multiple laser beam spots 有权
标题翻译：使用多个激光束点进行半导体结构处理的方法和系统
公开(公告)号：US08383982B2
公开(公告)日：2013-02-26
申请号：US11980872
申请日：2007-10-30
申请人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen , Clint Vandergiessen
发明人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen , Clint Vandergiessen
IPC分类号： B23K26/38 , B23K26/067
CPC分类号： H01L23/5258 , B23K26/042 , B23K26/0613 , B23K26/067 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或其中的结构。结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。

7. 发明授权

US07923306B2 Semiconductor structure processing using multiple laser beam spots 有权
标题翻译：使用多个激光束点的半导体结构处理
公开(公告)号：US07923306B2
公开(公告)日：2011-04-12
申请号：US11052000
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Stephen N. Swaringen , Frank G. Evans
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Stephen N. Swaringen , Frank G. Evans
IPC分类号： H01L21/00 , B23K26/00
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译：方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构。该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动。

8. 发明申请

US20100089881A1 SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LATERALLY SPACED LASER BEAM SPOTS DELIVERING MULTIPLE BLOWS 审中-公开
标题翻译：半导体结构处理使用多个间隔激光束波束输送多个发泡
公开(公告)号：US20100089881A1
公开(公告)日：2010-04-15
申请号：US12638685
申请日：2009-12-15
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
IPC分类号： B23K26/06 , B23K26/08 , B23K26/36
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译：方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构或在与第一行不同的第二行上的两个相邻结构之间。所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构，并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

9. 发明申请

US20090011614A1 RECONFIGURABLE SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS 审中-公开
标题翻译：使用多个激光束的可重构半导体结构处理
公开(公告)号：US20090011614A1
公开(公告)日：2009-01-08
申请号：US12210955
申请日：2008-09-15
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Stephen N. Swaringen , Frank G. Evans
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Stephen N. Swaringen , Frank G. Evans
IPC分类号： H01L21/268 , B23K26/08
CPC分类号： B23K26/067 , B23K26/0624 , B23K26/066 , B23K26/0676 , B23K26/0853 , B23K2101/40 , B23K2103/10 , B23K2103/12 , B23K2103/14 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor wafer using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links. The structures are arranged in rows and may be processed in either an on-axis mode or a cross-axis mode. In the on-axis mode, the beam spots fall on structures in the same row as they move along the row. In the cross-axis mode, the beam spots fall on structures in different rows as they move along the rows.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体晶片上或其中的结构。结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。这些结构被排列成行，并且可以以轴上模式或横轴模式进行处理。在轴上模式下，光束点落在同一行的结构上，因为它们沿着行移动。在横轴模式下，当束沿着行移动时，束斑落在不同行中的结构上。

10. 发明授权

US07435927B2 Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset 有权
标题翻译：使用具有轴上偏移的多个横向间隔开的激光束点的半导体连接处理
公开(公告)号：US07435927B2
公开(公告)日：2008-10-14
申请号：US11051265
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Stephen N. Swaringen
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Stephen N. Swaringen
IPC分类号： B23K26/38 , B23K26/067
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/082 , G11C17/14 , G11C17/143 , H01L2924/0002 , H01L2924/00
摘要： Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.
摘要翻译：多个激光束选择性地照射半导体衬底上或内部的导电结构。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。一种方法沿着相应的第一和第二传播路径传播第一和第二传播路径，其中在相应的给定时间，半导体衬底上或第二位置处的相应的第一和第二轴入射到相应的第一和第二位置处。第一和第二位置在它们各自的行中的结构上或它们各自的行中的两个相邻结构之间，这是不同的。第二位置在行的长度方向上偏离第一位置一定量。该方法使激光束轴相对于半导体衬底在行的长度方向上基本一致地移动，以便用激光束选择性地照射行中的结构。

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