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1. 发明授权

US5442201A Semiconductor light emitting device with nitrogen doping 失效
标题翻译：具有氮掺杂的半导体发光器件
公开(公告)号：US5442201A
公开(公告)日：1995-08-15
申请号：US216278
申请日：1994-03-23
申请人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/00 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/305 , Y10S438/925
摘要： An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0
摘要翻译：由式（Al x Ga 1-x）y In 1-y P（0

2. 发明授权

US5597761A Semiconductor light emitting device and methods of manufacturing it 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5597761A
公开(公告)日：1997-01-28
申请号：US402487
申请日：1995-03-10
申请人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/00 , H01L33/30 , H01L21/208
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/305 , Y10S438/925
摘要： An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0
摘要翻译：由式（Al x Ga 1-x）y In 1-y P（0

3. 发明授权

US5442203A Semiconductor light emitting device having AlGaAsP light reflecting layers 失效
标题翻译：具有AlGaAsP光反射层的半导体发光器件
公开(公告)号：US5442203A
公开(公告)日：1995-08-15
申请号：US299084
申请日：1994-08-18
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/10 , H01L33/14 , H01L33/30 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19 , H01L33/00
CPC分类号： H01L33/14 , H01L33/10 , H01S5/20 , H01S5/32308 , H01S5/2004 , H01S5/3211 , H01S5/32325
摘要： A semiconductor light emitting device has a light emitting layer portion comprising AlGaInP layers formed on a GaAs substrate. A light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between the GaAs substrate and the light emitting layer portion. The light reflecting layer portion comprises Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v layers (where: 0.ltoreq.w.ltoreq.1, 0
摘要翻译：半导体发光器件具有包含在GaAs衬底上形成的AlGaInP层的发光层部分。在GaAs衬底和发光层部分之间设置包括具有不同折射率的交替叠层的光反射层部分。光反射层部分包括AlwGa1-wAs1-vPv层（其中：0≤w≤1,0

4. 发明授权

US5600158A Semiconductor light emitting device with current spreading layer 失效
标题翻译：具有电流扩散层的半导体发光器件
公开(公告)号：US5600158A
公开(公告)日：1997-02-04
申请号：US514628
申请日：1995-08-14
申请人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
发明人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/14
摘要： A semiconductor light emitting device comprising an n-type GaAs substrate, a light emitting layer portion consisting of an AlGaInP double heterojunction structure formed on the substrate, and a p-type current spreading layer formed on the light emitting layer portion, wherein the p-type current spreading layer comprises an undoped current spreading layer and a heavily-doped current spreading layer formed on said undoped current spreading layer. With this construction, it is possible to achieve a stable control of carrier concentration in a p-type cladding layer, to prevent deterioration of the interface between the p-type cladding layer and an active layer and also to prevent crystallinty-deterioration of the active layer with the result that the emission intensity of the device can be increased to a considerable extent.
摘要翻译：一种半导体发光器件，包括n型GaAs衬底，由形成在衬底上的AlGaInP双异质结结构构成的发光层部分和形成在发光层部分上的p型电流扩散层，型电流扩展层包括未掺杂电流扩展层和形成在所述未掺杂电流扩展层上的重掺杂电流扩散层。通过这种结构，可以实现p型包覆层中的载流子浓度的稳定控制，以防止p型覆层与有源层之间的界面的劣化，并且防止活性物质的结晶劣化从而可以在相当程度上增加器件的发光强度。

5. 发明授权

US5739553A Algainp light-emitting device 失效
标题翻译：阿根廷发光装置
公开(公告)号：US5739553A
公开(公告)日：1998-04-14
申请号：US577961
申请日：1995-12-26
申请人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
发明人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/14
摘要： The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.
摘要翻译：本发明提供一种具有更长寿命和更高可靠性的AlGaInP发光器件。 AlGaInP发光器件包括n型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm），（Al0.15Ga0.85）0.51In0.49P有源层（约0.6 厚度为1μm），p型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm）以及由p型Al0构成的p型电流扩展层。（厚约3μm）或p型Al0.7Ga0.3As0.97P0.03层（约3μm厚）和p型GaAs0.5P0.5层（约7μm） m），依次形成在n型GaAs衬底上，另外安装在p型GaAs0.5P0.5层上的上表面电极和安装在n型GaAs的下表面上的下表面电极基质。

6. 发明授权

US5444269A AlGaInP light emitting device 失效
标题翻译： AlGaInP发光器件
公开(公告)号：US5444269A
公开(公告)日：1995-08-22
申请号：US251370
申请日：1994-05-31
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/14
摘要： An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate, and then a layer made of a second conductivity-type Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v mixed crystal (Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer of said light emitting layer portion, and has good lattice-matching with (Al.sub.B Ga.sub.1-B).sub.0.51 In.sub.0.49 P mixed crystal (layer) constituting said light emitting layer portion, is formed as a current spreading layer on top of said light emitting layer portion. Here, w and v are in the range of 0.45.ltoreq.w
摘要翻译：在第一导电型GaAs衬底上形成AlGaInP双异质结结构或AlGaInP单异质结结构，然后形成由第二导电型AlwGa1-wAs1-vPv混晶（Al0.7Ga0.3As0.97P0.03 具有比从所述发光层部分的有源层发射的光子能量大的带隙能量，并且与构成所述发光层部分的（AlBGa1-B）0.51In0.49P混晶（层）具有良好的晶格匹配发光层部分形成为在所述发光层部分的顶部上的电流扩散层。这里，w和v分别在0.45

7. 发明授权

US06759689B2 Light emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US06759689B2
公开(公告)日：2004-07-06
申请号：US10213081
申请日：2002-08-07
申请人： Keizo Adomi , Masanobu Takahashi , Nobuhiko Noto
发明人： Keizo Adomi , Masanobu Takahashi , Nobuhiko Noto
IPC分类号： H01L3300
CPC分类号： H01L33/0079 , H01L33/12 , H01L33/405
摘要： A metal layer 3, a light emitting layer section 4 and a first electrode 5 are formed in the order on a first main surface 7 side of a conductive substrate 2 and a current is supplied to the light emitting layer section 4 through the first electrode 5 and the conductive substrate 2. By using reflection on the metal layer 3, not only can good external quantum efficiency be realized, but electrodes or terminals can also be formed on both sides of the light emitting element. Thus, provided is a light emitting element excellent in external quantum efficiency thereof and in addition, not only simple in structure of a terminal lead thereof but excellent in convenience.
摘要翻译：在导电性基板2的第一主面7侧依次形成金属层3，发光层部4和第一电极5，并且通过第一电极5向发光层部4供给电流和导电基板2.通过在金属层3上使用反射，不仅可以实现良好的外部量子效率，而且可以在发光元件的两侧形成电极或端子。因此，提供了其外部量子效率优异的发光元件，此外，不仅其端子引线的结构简单，而且方便性优异。

8. 发明申请

US20120244679A1 METHOD FOR PRODUCING BONDED WAFER 有权
标题翻译：生产粘结波的方法
公开(公告)号：US20120244679A1
公开(公告)日：2012-09-27
申请号：US13514414
申请日：2010-11-18
申请人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
发明人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/3247 , H01L21/302 , H01L21/3065 , H01L21/76254
摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
摘要翻译：本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理，其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法在离子注入分层方法中进行分层。

9. 发明授权

US08076223B2 Method for producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08076223B2
公开(公告)日：2011-12-13
申请号：US12309527
申请日：2007-07-04
申请人： Satoshi Oka , Nobuhiko Noto
发明人： Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/0251 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661
摘要： The present invention is a method for producing a semiconductor substrate, including steps of forming a SiGe gradient composition layer and a SiGe constant composition layer on a Si single crystal substrate, flattening a surface of the SiGe constant composition layer, removing a natural oxide film on the flattened surface of the SiGe constant composition layer, and forming a strained Si layer on the surface of the SiGe constant composition layer from which the natural oxide film has been removed, wherein the formation of the SiGe gradient composition layer and the formation of the SiGe constant composition layer are performed at a temperature T1 that is higher than 800° C., the removal of the natural oxide film from the surface of the SiGe constant composition layer is performed in a reducing atmosphere through a heat treatment at a temperature T2 that is equal to or higher than 800° C. and lower than the temperature T1, and the formation of the strained Si layer is performed at a temperature T3 that is lower than the temperature T1. This method enables epitaxial growth of the strained Si layer on the flattened SiGe layer without degrading surface flatness of the SiGe layer.
摘要翻译：本发明是一种半导体衬底的制造方法，包括以下步骤：在Si单晶衬底上形成SiGe梯度组合物层和SiGe恒定组成层，使SiGe恒定组合物层的表面平坦化，除去天然氧化膜 SiGe恒定组成层的平坦化表面，并且在去除了天然氧化物膜的SiGe恒定组合物层的表面上形成应变Si层，其中形成SiGe梯度组合物层并形成SiGe 恒定组成层在高于800℃的温度T1下进行，通过在温度T2即热处理下在还原气氛中从SiGe恒定组成层的表面除去天然氧化膜等于或高于800℃并低于温度T1，并且应变Si层的形成在te 温度T3低于温度T1。该方法能够使平坦化的SiGe层上的应变Si层外延生长，而不降低SiGe层的表面平坦度。

10. 发明申请

US20110281420A1 METHOD FOR MANUFACTURING SOI WAFER 审中-公开
标题翻译： SOI WAFER制造方法
公开(公告)号：US20110281420A1
公开(公告)日：2011-11-17
申请号：US13145275
申请日：2010-01-08
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/301
CPC分类号： H01L21/76254 , H01L21/30608 , H01L21/31111
摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.
摘要翻译：一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

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