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    • 1. 发明申请
    • METHOD FOR MANUFACTURING SOI WAFER
    • SOI WAFER制造方法
    • US20110281420A1
    • 2011-11-17
    • US13145275
    • 2010-01-08
    • Hiroji AgaIsao YokokawaNobuhiko Noto
    • Hiroji AgaIsao YokokawaNobuhiko Noto
    • H01L21/301
    • H01L21/76254H01L21/30608H01L21/31111
    • A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.
    • 一种用于制造SOI晶片的方法,包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。 该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体,使得绝缘膜 位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。
    • 4. 发明申请
    • METHOD FOR PRODUCING BONDED WAFER
    • 生产粘结波的方法
    • US20120244679A1
    • 2012-09-27
    • US13514414
    • 2010-11-18
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • H01L21/20
    • H01L21/3247H01L21/302H01L21/3065H01L21/76254
    • The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
    • 本发明涉及一种接合晶片的制造方法,其特征在于,在含有氢或氯化氢的气氛中,对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理, 其中预先在其上放置接合晶片的基座的表面,在平坦化热处理时使用的基座被涂覆有硅膜。 结果,提供了一种接合晶片的制造方法,即使在将粘合晶片的薄膜的表面平坦化的热处理后,也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法 在离子注入分层方法中进行分层。
    • 5. 发明申请
    • METHOD FOR MANUFACTURING BONDED WAFER
    • 制造粘结波的方法
    • US20110104870A1
    • 2011-05-05
    • US12866271
    • 2009-02-17
    • Norihiro KobayashiTohru IshizukaHiroji AgaNobuhiko Noto
    • Norihiro KobayashiTohru IshizukaHiroji AgaNobuhiko Noto
    • H01L21/762
    • H01L21/76254
    • A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
    • 一种用于制造接合晶片的方法,包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子,以在晶片中形成离子注入层,将离子 将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面,然后在离子注入层分层接合晶片以制造接合晶片。 将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜,进行蚀刻生长的氧化物膜,并且进行与另一晶片的接合。 该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。
    • 7. 发明申请
    • METHOD FOR MANUFACTURING BONDED WAFER
    • 制造粘结波的方法
    • US20130102126A1
    • 2013-04-25
    • US13699118
    • 2011-04-21
    • Hiroji AgaSatoshi OkaNobuhiko Noto
    • Hiroji AgaSatoshi OkaNobuhiko Noto
    • H01L21/265
    • H01L21/265H01L21/302H01L21/3065H01L21/3247H01L21/76254
    • A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×1016/cm2 or less, and the flattening heat treatment is performed in an atmosphere including HCl gas. Therefore, a method for manufacturing a bonded wafer having a low resistivity thin film (SOI layer) that contains dopant, such as boron, with high concentration according to the ion-implantation delamination method, where outward diffusion of dopant and suction due to oxidation can be inhibited to maintain low resistivity.
    • 一种用于制造接合晶片的方法,包括:在接合晶片中形成离子注入层,将接合晶片接合到基底晶片,在离子注入层分层接合晶片,以及在表面之后进行平坦化热处理 分层,其中使用硅单晶晶片作为形成离子注入层的区域的电阻率为0.2Ω·米或更小的接合晶片,形成离子注入层,其中用于形成层的离子剂量为 4×10 16 / cm 2以下,扁平化热处理在含有HCl气体的气氛中进行。 因此,根据离子注入脱层法,具有含有高掺杂剂等硼等掺杂剂的低电阻薄膜(SOI层)的接合晶片的制造方法,其中掺杂剂的向外扩散和由于氧化引起的抽吸可以 被抑制以维持低电阻率。
    • 8. 发明授权
    • Method for manufacturing bonded wafer
    • 贴合晶圆的制造方法
    • US08097523B2
    • 2012-01-17
    • US12866271
    • 2009-02-17
    • Norihiro KobayashiTohru IshizukaHiroji AgaNobuhiko Noto
    • Norihiro KobayashiTohru IshizukaHiroji AgaNobuhiko Noto
    • H01L21/30H01L21/46
    • H01L21/76254
    • A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
    • 一种用于制造接合晶片的方法,包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子,以在晶片中形成离子注入层,将离子 将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面,然后在离子注入层分层接合晶片以制造接合晶片。 将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜,进行蚀刻生长的氧化物膜,并且进行与另一晶片的接合。 该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。
    • 9. 发明授权
    • Method for producing bonded wafer
    • 接合晶片的制造方法
    • US08691665B2
    • 2014-04-08
    • US13514414
    • 2010-11-18
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • H01L21/30H01L21/46H01L21/00
    • H01L21/3247H01L21/302H01L21/3065H01L21/76254
    • The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
    • 本发明涉及一种接合晶片的制造方法,其特征在于,在含有氢或氯化氢的气氛中,对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理, 其中预先在其上放置接合晶片的基座的表面,在平坦化热处理时使用的基座被涂覆有硅膜。 结果,提供了一种接合晶片的制造方法,即使在将粘合晶片的薄膜的表面平坦化的热处理后,也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法 在离子注入分层方法中进行分层。
    • 10. 发明申请
    • METHOD FOR MANUFACTURING SOI WAFER
    • SOI WAFER制造方法
    • US20110223740A1
    • 2011-09-15
    • US13129538
    • 2009-11-11
    • Tohru IshizukaNorihiro KobayashiHiroji AgaNobuhiko Noto
    • Tohru IshizukaNorihiro KobayashiHiroji AgaNobuhiko Noto
    • H01L21/762
    • H01L21/76254H01L21/84H01L22/12H01L22/20H01L29/78603
    • A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film.
    • 一种制造具有预定厚度的具有预定厚度的掩埋氧化物膜的SOI晶片的方法,包括:在掩埋氧化膜上形成SOI层的SOI晶片材料上进行用于减小掩埋氧化膜厚度的热处理,其中, 基于通过热处理而减少的掩埋氧化膜的厚度的比率,计算要进行用于减小掩埋氧化膜的厚度的热处理的SOI晶片材料的SOI层相对于 掩埋氧化膜的面内范围的变化量的允许值,由热处理引起的变化,以及通过使接合晶片的厚度变薄而获得的SOI晶片材料,使得具有计算出的厚度 对SOI层进行热处理,以减小掩埋氧化膜的厚度。